JPS5890792A - Manufacture of semiconductor photo device - Google Patents
Manufacture of semiconductor photo deviceInfo
- Publication number
- JPS5890792A JPS5890792A JP56191094A JP19109481A JPS5890792A JP S5890792 A JPS5890792 A JP S5890792A JP 56191094 A JP56191094 A JP 56191094A JP 19109481 A JP19109481 A JP 19109481A JP S5890792 A JPS5890792 A JP S5890792A
- Authority
- JP
- Japan
- Prior art keywords
- base
- frame
- base piece
- pieces
- stem
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は自動組立を容易にした半導体装置の製造方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device that facilitates automatic assembly.
半導体装置は光を放射まえは受光する方向中位量が装置
のステムのめゐ点もしくは面を基準にして精密に決めら
れていることが望まれる。従来、このような装置を組み
立てるKは、1つずつ分離され九ステムを使用し、これ
らのステムを順次組立装置に投入することKより行なっ
ていた。従来の組立方法を第1図のようなステムを使用
した半導体レーザ装置を一例にして説明する。Before a semiconductor device emits light, it is desirable that the median amount of light in the receiving direction be precisely determined with reference to the eye point or plane of the stem of the device. Conventionally, such a device was assembled by using nine stems separated one by one and sequentially feeding these stems into an assembly device. A conventional assembly method will be explained using a semiconductor laser device using a stem as shown in FIG. 1 as an example.
第1図(6)は半導体装置の平面図、同図に)は半導体
装置の一部破断側面図である。(1)はベース、(2)
は取付孔、(3) 、 (4)は外部リード、(5)は
ガラスでリード(3)をベース(1)から絶縁している
。上記ベース(1)や外部リード(3) 、 (4)等
によりステム(ロ)が構成されている。(6)は放熱体
で、予め半導体レーザ素子(7)がろう付けされている
。この放熱体(6)をステム(ロ)に取り付けるには、
まずステム(ロ)を組立装置ら定位置の所に半導体レー
ザ素子(7)から出るレーザ光の発光点が来るようにし
て、ベース(6)Kろう付けする。その後金属細線(1
1)で半導体レーザチップ(7)と外部リード(5)を
接続して半導体レーザ装置ができあがる。FIG. 1(6) is a plan view of the semiconductor device, and FIG. 1(6) is a partially cutaway side view of the semiconductor device. (1) is the base, (2)
are mounting holes, (3) and (4) are external leads, and (5) is glass that insulates the lead (3) from the base (1). The base (1), external leads (3), (4), etc. constitute a stem (b). (6) is a heat sink, to which a semiconductor laser element (7) is brazed in advance. To attach this heat sink (6) to the stem (b),
First, the stem (b) is placed in a fixed position from the assembly apparatus so that the light emitting point of the laser beam emitted from the semiconductor laser element (7) is located, and the base (6) is brazed to the base (6). After that, thin metal wire (1
In step 1), the semiconductor laser chip (7) and external leads (5) are connected to complete the semiconductor laser device.
しかるに、このような従来の製造方法では、多置土産す
る際に多数のステム(ロ)をそれぞれ1つづつ組立装置
に挿入し、位置合わせしなけLばならず、自動的に組み
立てるには困難を要する欠点があった。However, with this conventional manufacturing method, when making multiple souvenirs, a large number of stems (B) must be inserted one by one into an assembly device and aligned, making it difficult to assemble automatically. There were some drawbacks.
この発明はこのような従来の製造方法における欠点を除
去するためになされ友もので、複数のベース片を連成し
たフレームにおける各ベース片の所定位置に半導体素子
を位置決め固定したのち、各ベース片をステムとして分
離独立させることにより、自動組立を容易に行ない得る
半導体装置の製造方法を提供することを目的としている
。The present invention was made in order to eliminate such drawbacks in the conventional manufacturing method, and after positioning and fixing a semiconductor element at a predetermined position of each base piece in a frame in which a plurality of base pieces are connected, each base piece is It is an object of the present invention to provide a method for manufacturing a semiconductor device that can be easily assembled automatically by separating and independent parts as a stem.
以下、この発明の一実施例を図面にし九がって説明する
。An embodiment of the present invention will be described below with reference to the drawings.
第2図は複数のベース片を一体に達成したフレームを示
す平面図で、第1図と同一部所には同一符号を付して説
明を省略する。(21+)〜(2In)は複数個のベー
ス片で、これらベース片(211)(21n)と各ベー
ス片(21s)〜(2In)を互に一体に連成する連結
片(1)とKより、フレーム(至)が形成されている。FIG. 2 is a plan view showing a frame in which a plurality of base pieces are integrated, and the same parts as in FIG. (21+) to (2In) are a plurality of base pieces, and a connecting piece (1) and K that interconnect these base pieces (211) (21n) and each base piece (21s) to (2In) integrally with each other. A frame is formed.
このフレーム(至)を組立装置に投入し、連続的もしく
はせる。その都度、基準面XX 、 YYを決めながら
、予め半導体レーザ素子(7)をろう付けした放熱体(
6)(第3図)を第1図の場合と同じように位置決めし
ながら各ベース片(財)の所定位置にろう付けする。This frame is put into an assembly device and assembled continuously. Each time, while determining the reference planes XX and YY, the heat sink (
6) (Fig. 3) is positioned in the same manner as in Fig. 1 and brazed to the predetermined position of each base piece (goods).
しかる後、上記各ベース片(ins)〜(21n)を、
たとえば切断線(2)に沿ってそれぞれ切断して、第3
図に示したようにステム(ロ)として分離独立させれば
、第1図と同等の半導体レーザ装置ができあがる。After that, each of the above base pieces (ins) to (21n),
For example, cut each along the cutting line (2), and
If the stem (B) is separated and independent as shown in the figure, a semiconductor laser device equivalent to that shown in FIG. 1 will be completed.
なお、金属軸m(8)のボンディングはフレーム(至)
の状態で行なってもよいし、分離した後であってもよく
、ここでは限定されるべきものではない。In addition, the bonding of the metal shaft m (8) is to the frame (to)
It may be carried out in the same state or after separation, and is not limited here.
このようにフレーム(ロ)を形成しておけば、組立装置
に投入する際は勿論のこと、1つのベース片(ロ)分ず
つ搬送する際や、XI 、 YYの画法めをする際にも
自動化が非常に容易となる。自動化の容易さは、上記説
明の工程のみに限らず、フレーム(2)の状態で、たと
えば放熱体(6)および半導体レーザ素子(7)を窓付
キャップ(図示せず)でシールする場合、さらには半導
体レーザ装置の特性を測定する場合にも言えることであ
る。If the frame (B) is formed in this way, it can be used not only when loading it into the assembly equipment, but also when transporting one base piece (B) at a time, or when drawing the XI and YY. It is also very easy to automate. Ease of automation is not limited to the steps described above; for example, when sealing the heat sink (6) and the semiconductor laser element (7) in the state of the frame (2) with a window cap (not shown), This also applies when measuring the characteristics of a semiconductor laser device.
また、上記実施例では、半導体レーザ装置を例に採った
が、その他の半導体装置についても、同じようにフレー
ムを形成しておくことにより自動組立が容易にできるよ
うになる。Further, in the above embodiment, a semiconductor laser device was taken as an example, but other semiconductor devices can be easily assembled automatically by forming a frame in the same manner.
このように、この発明による製造方法にしたがえば、複
数のベース片を一連化してなるフレームを形成して半導
体素子を取り付け、しかる後各ペース片をステムとして
分離させるから、自動組立の容易化を図ることができる
効果がある。As described above, according to the manufacturing method of the present invention, a frame is formed by connecting a plurality of base pieces in series, a semiconductor element is attached to the frame, and each paste piece is then separated as a stem, which facilitates automatic assembly. This has the effect of making it possible to achieve this goal.
第1図(A)、(ロ)はそれぞれ従来の半導体装置の製
造方法を説明するために例に採った半導体レーザ装置を
示す平面図および一部破断側面図、第2図はこの発明の
一実施例による半導体装置を製造するためのフレームを
示す平面図、第3図は第2図のフレームから製造され九
半導体装置を示す平面図である。
(3) 、 (4)・・・外部リード、(7)・・・半
導体素子、(ホ)・・・連結片、’ (211)〜(2
1!l)・・・ベース片、0力・・・ステム、(2)・
・・7レーム。
なお、図中同一符号は同一もしくは相当部分を示す。
代理人 葛野信−(外1名)
第1図
第3図
手続補正書(自発]
特許1”x長官殿
1、事fiの表示 特願昭 56−191094
号2、発明の名称
半導体装置の製造方法
3、補正をする者
5、補正の対象
明細書の「発明の詳細な説明」
6、補正の内容1A and 1B are a plan view and a partially cutaway side view, respectively, of a semiconductor laser device taken as an example to explain a conventional method of manufacturing a semiconductor device, and FIG. FIG. 3 is a plan view showing a frame for manufacturing a semiconductor device according to an embodiment, and FIG. 3 is a plan view showing nine semiconductor devices manufactured from the frame of FIG. 2. (3), (4)...External lead, (7)...Semiconductor element, (E)...Connecting piece,' (211) to (2
1! l)...Base piece, 0 force...Stem, (2)...
...7 reams. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Makoto Kuzuno (1 other person) Figure 1 Figure 3 Procedural amendment (spontaneous) Patent 1”
Item 2. Name of the invention Method for manufacturing a semiconductor device 3. Person making the amendment 5. "Detailed description of the invention" of the specification to be amended 6. Contents of the amendment
Claims (1)
ベース片を一体に連成させる連結片とからなるフレーム
を型取りし九のち、このフレームを連続もしくは間欠搬
送しながら、各ベース片に該ベース片の基準点もしくは
基準面を目安にしてそれぞれ半導体素子を順次所定位置
に位置決め固定し、しかる後上記フレームから各ベース
片をそれぞれステふとして分IwI′l!jI立させる
ことを特徴とする半導体装置の製造方法。(1) A frame consisting of a plurality of base pieces in which external leads are implanted and a connecting piece that connects these base pieces together is molded, and after that, the frame is conveyed continuously or intermittently, and each base piece is Using the reference point or reference plane of the base piece as a guide, each semiconductor element is sequentially positioned and fixed at a predetermined position, and then each base piece is moved from the frame to the position IwI'l! 1. A method of manufacturing a semiconductor device, characterized in that the semiconductor device is made to stand.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56191094A JPS5890792A (en) | 1981-11-25 | 1981-11-25 | Manufacture of semiconductor photo device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56191094A JPS5890792A (en) | 1981-11-25 | 1981-11-25 | Manufacture of semiconductor photo device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5890792A true JPS5890792A (en) | 1983-05-30 |
Family
ID=16268746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56191094A Pending JPS5890792A (en) | 1981-11-25 | 1981-11-25 | Manufacture of semiconductor photo device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5890792A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0607700A3 (en) * | 1992-12-24 | 1994-11-30 | Sharp Kk | Semiconductor laser device. |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56135984A (en) * | 1980-03-27 | 1981-10-23 | Matsushita Electric Ind Co Ltd | Manufacture of leadless light emitting diode chip |
-
1981
- 1981-11-25 JP JP56191094A patent/JPS5890792A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56135984A (en) * | 1980-03-27 | 1981-10-23 | Matsushita Electric Ind Co Ltd | Manufacture of leadless light emitting diode chip |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0607700A3 (en) * | 1992-12-24 | 1994-11-30 | Sharp Kk | Semiconductor laser device. |
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