JPS5887183A - Optical recording material - Google Patents
Optical recording materialInfo
- Publication number
- JPS5887183A JPS5887183A JP56184496A JP18449681A JPS5887183A JP S5887183 A JPS5887183 A JP S5887183A JP 56184496 A JP56184496 A JP 56184496A JP 18449681 A JP18449681 A JP 18449681A JP S5887183 A JPS5887183 A JP S5887183A
- Authority
- JP
- Japan
- Prior art keywords
- wavelength
- recording material
- optical recording
- shows
- spectral characteristics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】 する。[Detailed description of the invention] do.
銀Ａ７ と二酸化ケイ素Ｓｉ○２ を含む感光材料とし
ては、フォトクロミックガラスが知られている。これは
’ｔ Ｓｉ０２及びＢ２０３ を主成分としたガラスマ
トリックス中に、銀と・・ロケンを導入し、６００℃〜
７００℃ の温度で数十分〜数時間熱処理し、感光体と
なるノ・ロゲン化銀微粒子を析出させたものである。フ
ォトクロミックガラスは、紫外光及び可視光の照射（で
より黒ｒヒし、また加熱することにより速やかに退色す
るため、書換え可能な記録材料として使用しうるもので
ある。しかし、銅Ｃｕ等の添加物の導入及びガラス製造
中に飛散しやすいＡ２やハロゲンの量の最適化を図るた
めに、製造工程が複雑であったり、捷だ感光波長の長波
や難しく、更に室温においても退色して記録が失われる
等の欠点があった。Photochromic glass is known as a photosensitive material containing silver A7 and silicon dioxide Si○2. This is done by introducing silver and Roken into a glass matrix mainly composed of Si02 and B203, and heating it at 600℃~
It is heat-treated at a temperature of 700° C. for several tens of minutes to several hours to precipitate fine silver halogenide particles that will become a photoreceptor. Photochromic glass can be used as a rewritable recording material because it becomes darker when irradiated with ultraviolet light and visible light, and quickly fades when heated. However, it can be used as a rewritable recording material. In order to optimize the amount of A2 and halogens that are easily scattered during the introduction of materials and glass manufacturing, we have to avoid cases where the manufacturing process is complex, the wavelength of the photosensitive material is long and difficult, and the color fades even at room temperature, making recording difficult. There were drawbacks such as loss of information.
本発明の目的は、製造方法が簡便で、定着処理が不要で
あシ、且つ書換え可能な光学記録材料を提供するにある
。An object of the present invention is to provide an optical recording material that is easy to manufacture, does not require a fixing process, and is rewritable.
すなわち本発明を概説すｈ，ば、本発明は、Ａ ｙ２
０ Ｓ １． ０２系の化合物で構成することを特徴
とする光学記録材料に関する。That is, to summarize the present invention, h, the present invention is A y2
0 S 1. The present invention relates to an optical recording material characterized by being composed of a 02-based compound.
Ａｙｚ ０ − Ｓｉ０２系の化合物としては、従来、
Ａｙ４Ｓｉ０４、Ａｇ３ Ｓｊ．２ ０７、 Ａｙｚ
Ｓ１０３及びＡｙｚ ＳｊｚＯｓが知られており、それ
らの合成法も公知である〔Ｅ、１０ （ Ｅ． Ｔｈｊ
．］−ｏ ）、Ｆ．ウオトク（ Ｆ． Ｗｏｄｔｃｋｅ
）〃ツアイト／ユリフト フユール アンオル力ニッシ
エ ラント アルゲマイネ ヘミー〃（Ｚ、 ａｎ
ｏｒｇ、 ａｌ］−ｇ、 Ｃｈｅｍ、 ） ２４
７． ｐ２９５（ｊ９７８）及びＶ、 Ｍ、 ヤン
セン（Ｖ、 Ｍ、 Ｊａｎｓｅｎ ） 〃アクタフリス
タロブラフイカ“（Ａｃｔａ Ｃｒｙｓｔ、 ） Ｂ
３３゜ｐ３５８４ ’（１９７７）参照〕。As Ayz 0 - Si02 type compounds, conventionally,
Ay4Si04, Ag3Sj. 2 07, Ayz
S103 and Ayz SjzOs are known, and their synthesis methods are also known [E, 10 (E. Thj
．． ]-o), F. F. Wodtcke
)〃Zait/Urift Fuyur Anorikinissier Land Allgemeine Hemy〃(Z, an
org, al]-g, Chem, ) 24
7. p295 (j978) and V, M, Jansen (Acta Cryst, ) B
33° p. 3584' (1977)].
これらの化合物の光学的性質は未知であったが、感光性
を調べた結果、光照射により黒化し、加熱により退色す
ることを見出し７た。Although the optical properties of these compounds were unknown, as a result of examining their photosensitivity, they found that they turned black when exposed to light and faded when heated7.
本発明のＡｇ２Ｏ−Ｓｉ ０２ 系２成分酸化物光学記
録材利け、これら化合物自体が感光性を有し、加熱する
ことにより容易に記録を消去することができるので、記
録・消去を繰返すことができる点に特徴がある。そのた
め、
（１）定着が不要である。Using the Ag2O-Si02 based binary oxide optical recording material of the present invention, these compounds themselves have photosensitivity and recording can be easily erased by heating, so recording and erasing can be repeated. It is characterized by what it can do. Therefore, (1) Fixation is not necessary.
（２） 感光感度が高い。(2) High photosensitivity.
（３） へｙ２０− Ｓｌ ０２系の成分比を変える
ことにより、感光波長域を選択することが可能である。(3) By changing the component ratio of the y20-Sl02 system, it is possible to select the sensitive wavelength range.
（４）結晶性（オ料であるため、熱的に安定である。(4) Crystallinity (because it is an oxide, it is thermally stable.
（５） 製造工程に特殊な］二夫を要しない。(5) No special second husband is required in the manufacturing process.
という利点がある。There is an advantage.
以下、実施例により本発明の詳細な説明するが、本発明
はこれらに限宇されるものではない。Hereinafter, the present invention will be explained in detail with reference to Examples, but the present invention is not limited thereto.
なお添付図面について概説すると、第１図は、Ａｙ４Ｓ
ｊ、０４の反射分光特性を、波１％： （ｎｍ） （横
軸）と反射率（係）（縦軸）との関係で表すグラフであ
る。第２図ば、Ａ２４Ｓ１０４の分光感度を、照射波長
（ｎｍ） （横軸）と光照射足よる波長７００１１１１
１における反射率の低下（係）（縦軸）との関係で表す
グラフである。第３図（ｄム Ａ４５ｊ０３の反射分光
特性を、前記関係で表すグラフである。第４図は、Ａ
ｙ２８１．０３の分光感度を、前記間・係で表すグラフ
である。第５図（は、３８０℃で熱処理したＱ２Ｓｊ
Ｏ３の反射分光特性を、前記関係で表すグラフである。To give an overview of the attached drawings, Figure 1 shows the Ay4S
It is a graph showing the reflection spectral characteristics of 1% wave: (nm) (horizontal axis) and the reflectance (coefficient) (vertical axis) of the reflection spectral characteristics of 04. In Figure 2, the spectral sensitivity of A24S104 is determined by the irradiation wavelength (nm) (horizontal axis) and the wavelength 7001111.
1 is a graph expressed in relation to the decrease (coefficient) (vertical axis) of reflectance in No. 1. Figure 3 is a graph showing the reflection spectral characteristics of A45j03 using the above relationship.
It is a graph showing the spectral sensitivity of y281.03 using the above-mentioned interval. Figure 5 (is Q2Sj heat treated at 380℃
It is a graph showing the reflection spectral characteristics of O3 using the above relationship.
第６図は、Ａ７２ Ｓｉ２０５ の反射分光特性を、
前記関係で表すグラフである。第７図は、Ａｙ２Ｓｉ２
０５ の分光感度を、前記関係で表すグラフである１
、第８図は、６８０℃で熱処理したＡ、１２Ｓｉ２０５
の反射分光特性を、前記関係で表すグラフである。Figure 6 shows the reflection spectral characteristics of A72 Si205.
It is a graph expressed by the above-mentioned relationship. Figure 7 shows Ay2Si2
1 which is a graph expressing the spectral sensitivity of 05 using the above relationship.
, Figure 8 shows A,12Si205 heat treated at 680°C.
2 is a graph showing the reflection spectral characteristics of , using the above relationship.
実施例１（Ａｙ４ Ｓｊ、０４）
Ａ２４Ｓ１０４は、Ｃａ２ＳｉＯ４とｋｙＮＯ３を１＝
３２のモル比で混合し、白金るつぼに投入し、２６０℃
で６０時間保持１２、冷却後、水洗、乾燥１〜で得た。Example 1 (Ay4 Sj, 04) A24S104 has Ca2SiO4 and kyNO3 of 1=
Mix at a molar ratio of 32, put into a platinum crucible, and heat at 260°C.
After holding for 60 hours at step 12, cooling, washing with water, and drying step 1.
第１図ば、Ｏ４ＳｉＯ＋の反射分光特性を示すグラフで
ある。曲線１は、前記のようにして合成後のＡｙ４Ｓｉ
Ｏ４の反射分光特性及び波長５５０ｎｍの光を約７５０
ｍＪ／ａｉ照射後、（に２０θ℃で３０分間υｎ熱した
後の反射分光特性を示すもので、両者は全く同一である
。そして曲線２は、Ａ２４Ｓ１０４に前記のように波長
５５０ｎｍの光を約乃Ｏｍ Ｊ ／ｃｒｌ照射後の反射
分光特性を示す。曲線１と２を比較すると、波長ａｏｏ
ｎｍにおける反射率の低下は８優に達し、記録が行われ
ていることを示している。また、この記録後、２００℃
、３０分間の加熱により反射分光特性が照射前の状態に
復帰することも明らかである３、そして、再度、記録、
消去を繰返すことも可能である。第２図は、八ｙ４Ｓ１
．０４の分光感度曲線を示（７、縦軸は、３００ ｍＪ
ｌｃｒｌ 照射後の波長７００ｎｍにおける反射率の
低下幅を示す。波長７５０ｎｍ以下の光で記録が可能な
ことがわかる。記録の読出しには、波長約７５０ ｎｍ
以上の微弱な光源を用い、反射率の差を検出する等の方
法を用いる。FIG. 1 is a graph showing the reflection spectral characteristics of O4SiO+. Curve 1 shows Ay4Si after synthesis as described above.
Reflection spectral characteristics of O4 and light with a wavelength of 550 nm
It shows the reflection spectral characteristics after mJ/ai irradiation and after heating at 20θ℃ for 30 minutes, and both are exactly the same.Curve 2 shows the reflection spectral characteristics after irradiation with mJ/ai and after heating at 20θ℃ for 30 minutes. It shows the reflection spectral characteristics after irradiation with Om J /crl.Comparing curves 1 and 2, it is found that the wavelength aoo
The decrease in reflectance at nm reaches 8 well, indicating that recording is occurring. Also, after this recording, 200℃
It is also clear that the reflection spectral characteristics return to the state before irradiation by heating for 30 minutes.
It is also possible to repeat the erasure. Figure 2 is 8y4S1
．． The spectral sensitivity curve of 04 is shown (7, the vertical axis is 300 mJ
It shows the decrease in reflectance at a wavelength of 700 nm after lcrl irradiation. It can be seen that recording is possible with light having a wavelength of 750 nm or less. For reading records, a wavelength of approximately 750 nm is used.
A method such as detecting the difference in reflectance using the above-mentioned weak light source is used.
実施例２ （Ａ？ｚ ５ｉＯ３）
ＡＳ１２ Ｓｊ ０３は、ＢａＳｉＯ３とＡｙＮＯ３を
１：１６のモル比で混合し、白金るつぼに投入し、２９
０℃で３０時間保持し、冷却後、水洗、乾燥しで得だ。Example 2 (A?z 5iO3) AS12 Sj 03 was prepared by mixing BaSiO3 and AyNO3 at a molar ratio of 1:16, charging the mixture into a platinum crucible, and heating it at 29
It is obtained by keeping at 0°C for 30 hours, cooling, washing with water, and drying.
第３図だおける曲線３は、合成後のＡ４５ｊ０３の反射
分光特性を示す６．そして曲＠４ば、それに波長４５０
ｎｍの光をｓ ｏ ｍ、ｒ／ｃｔｒｌ照射した後の反射
分光特性を示す。波長７００ｎｍｉＣおりる反射率の低
下は１３係に達し、可決光により感度良く記録が行われ
ていることを示す６、第４図は、Ａｙ２ Ｓｉ ０３の
分光感度曲線を示し、縦軸は、４０ｍ Ｊ ／ｃｙｓｔ
照射後の波長７００ ｎｍにおける反射率の低下幅を示
す。この図は、Ａｙ２Ｓｉ○３が可視光のほぼ全域にわ
たって高い感度を有していることを示している。このＡ
ｙ２ Ｓｊ ０３は、加熱すると２５０℃付近で一旦黒
化し、更に３５０〜３８０℃寸で加熱すると、はぼ加熱
前の台に戻る。この」：うに−一度熱処理すると、もは
や室温から３８０℃以下の温度範囲では、加熱による黒
化は生じない、１熱処理したＡ、？２Ｓｉ０３も感光性
を示す。第５図゛（おける曲＠５は、６８０℃で熱、処
理）７たΔｙ２ｓｉ、０３の反射分光特性を示す。そし
て曲線６（ｄ：、３８０℃で熱処工甲したＡｇ３ Ｓｊ
０３に波１ｉ４５０ｎｍの光を１００ ｍＪ ／ｃｒ
；Ｉ 照射し／こ後の反射分光特性を示ｔ。第５図（
−１：、可視ン覧照射１により記録が可能であることを
示（７ている。記録後６５０℃で６０分間の加熱により
、反射分光特性１は、元の曲、線５の状態（・で復）７
、記録、消去を繰返すことも可能である。記録の読出し
には、波長約６５０ ｎｍ以十の微弱な光源を用い、反
射率の差を検出する等の方法を用いろ。Curve 3 in Figure 3 shows the reflection spectral characteristics of A45j03 after synthesis6. And the song @4ba, and wavelength 450
The reflection spectral characteristics after irradiation with nm light at s o m, r/ctrl are shown. The decrease in reflectance at a wavelength of 700 nmC reached a factor of 13, indicating that recording was carried out with good sensitivity by passing light. 6. Figure 4 shows the spectral sensitivity curve of Ay2Si03, and the vertical axis is 40 m. J/cyst
The graph shows the decrease in reflectance at a wavelength of 700 nm after irradiation. This figure shows that Ay2Si○3 has high sensitivity over almost the entire visible light range. This A
When y2 Sj 03 is heated, it once turns black around 250°C, and when further heated at 350 to 380°C, it returns to its original state before heating. ``This'': Once heat treated, sea urchin no longer darkens due to heating in the temperature range from room temperature to 380℃ or below. 1 Heat treated A, ? 2Si03 also exhibits photosensitivity. Figure 5 shows the reflection spectral characteristics of Δy2si, 03 (song @ 5 was heated and treated at 680° C.). And curve 6 (d: Ag3 Sj heat treated at 380°C
03 wave 1i450nm light 100mJ/cr
;I Indicates the reflection spectral characteristics after irradiation. Figure 5 (
-1: Indicates that recording is possible with visible light irradiation 1 (7). After recording, heating at 650°C for 60 minutes changes the reflection spectral characteristic 1 to the original curve, line 5 state (- 7)
It is also possible to repeat recording and erasing. To read the records, use a method such as using a weak light source with a wavelength of about 650 nm or more and detecting the difference in reflectance.
実施例３ （Ａｆ２Ｓ］、２０５）
Ａ！ｊＩ２８ｉ２０５は、Ｑ −Ｎａ、２ Ｓｉ２０５
とＡ、ｙＮＯ３を１：１６のモル比で混合し、白金るつ
ぼに投入し、２９０℃の温度で４８時間保持し、冷却後
水洗、乾燥して得た。ここで、α−Ｎａ２ Ｓｉ２０５
をβ〜Ｎａ２５ｊ２０５又はＬｊ、２ Ｓｉ２０５、Ｋ
２ Ｓｉ２０５、Ｂａ５ｊ、２０５で代用することはで
きない［Ｖ、 Ｆ、 ウオトク（Ｖ、 Ｆ。Example 3 (Af2S], 205) A! jI28i205 is Q-Na,2Si205
, A, and yNO3 were mixed at a molar ratio of 1:16, put into a platinum crucible, held at a temperature of 290°C for 48 hours, cooled, washed with water, and dried to obtain a mixture. Here, α-Na2Si205
β~Na25j205 or Lj, 2 Si205, K
2 Si205, Ba5j, 205 cannot be substituted [V, F, Otoku (V, F.
Ｗｏｄｔｃｋｅ ）”Ｚ、 ａｎｏｒｇ、 ａ、］−１
１ｇ Ｃ１］ｅｍ、 〃−３１４，ｐ３４１（１９６
２）参照〕。ａ −Ｎａ２ Ｓｉ２０６ば、Ｎａ２ＣＯ
３と５１０２ を１：２のモル比で混合し、８１０℃
の温度で３０時間焼成して調製した。第６図における曲
線７は、合成後のＡ、２ Ｓｉｚ Ｏ５の反射分光特性
を示す。そして曲線８は、それに波長４５０ｎｍの光を
１００ ｍＪ／ｃｒｌ 照射した後の反射分光特性を
示す。波長７００ｎｍにおける反射率は９係減少してお
り、記録が行われていることを示している。第７図は、
八％ Ｓｔ２０５の分光感度曲線を示し、縦軸１ｄ、照
射エネルギー１００ ｍＪ／ ｃｒＡで照射後の波長７
００ｎｍＫおける反射率の低下幅を示″４−７第７図は
、Ａ＋）＋２５１２０５が可視光のほぼ全域にわたって
感度を有（〜でいることを示して（Ａる。Wodtcke)”Z, anorg, a,]-1
1g C1]em, 〃-314, p341 (196
See 2)]. a -Na2Si206, Na2CO
3 and 5102 were mixed at a molar ratio of 1:2 and heated to 810°C.
It was prepared by firing at a temperature of 30 hours. Curve 7 in FIG. 6 shows the reflection spectral characteristics of A,2SizO5 after synthesis. Curve 8 shows the reflection spectral characteristics after irradiating it with 100 mJ/crl of light with a wavelength of 450 nm. The reflectance at a wavelength of 700 nm decreased by a factor of 9, indicating that recording was being performed. Figure 7 shows
The spectral sensitivity curve of 8% St205 is shown, vertical axis 1d, wavelength 7 after irradiation with irradiation energy 100 mJ/crA.
Figure 7 shows the range of decrease in reflectance at 00 nm K. Figure 7 shows that A+)+251205 has sensitivity over almost the entire range of visible light.
このＡｇ３ Ｓｉ、２０５は、加熱するとＡ ％ Ｓｉ
、 ０３と同様（で２５０℃付近で一旦黒化し、更に３
５０〜３８０℃才で昇温すると、はぼ加熱前の色に戻る
。このように一度熱処理すると、もはや室温から３８０
℃寸での温度範囲では、加熱しても黒化は生じない。熱
処理したＡ ｙ２ Ｓ１２０５ も感光性を示ｔ ｇ
第８図１・ておける曲線９は、３８０℃で熱処理したＡ
ｇ３５ｉ２０５ の反射分光特性を示す。そして曲線１
０は、３８０℃で熱処理したＡｇ３ Ｓｉ２０５姥波？
ｉ＋４５０ｎｍの光を１００ｍＪ’／ｒＪ照射Ｌ７’ｒ
後の反射分光特性を示す。第８図、γよ、可視光照射に
より記録が行えることを示してい乙。記録後３６０℃で
３０分間の加熱により、反射分光特性は、元の曲線９の
状態に復し、記録、消去を繰返すことができる。記録の
読出しには、波長約７ＤＯｎｍ以上の微弱な光源を用い
、反射率の差を検出する等の方法を用いる。This Ag3Si, 205 becomes A%Si when heated.
, Same as 03 (temporarily blackened at around 250℃, then 3
When the temperature is raised between 50 and 380 degrees Celsius, the color returns to the color before heating. Once heat treated in this way, the temperature will no longer reach 380 degrees from room temperature.
In the temperature range of degrees Celsius, no blackening occurs even when heated. Heat-treated A y2 S1205 also showed photosensitivity t g
Curve 9 in Figure 8 1 shows A heat-treated at 380°C.
The reflection spectral characteristics of g35i205 are shown. and curve 1
0 is Ag3 Si205 Ubanami heat treated at 380℃?
i+450nm light 100mJ'/rJ irradiation L7'r
Shows the later reflection spectral characteristics. Figure 8, γ, shows that recording can be performed by visible light irradiation. By heating at 360° C. for 30 minutes after recording, the reflection spectral characteristics return to the original state of curve 9, and recording and erasing can be repeated. To read the record, a method such as using a weak light source with a wavelength of about 7 DO nm or more and detecting a difference in reflectance is used.
以上の各実施例から明らかなように、本発明の光学記録
材料、け、既述の各種の利点を有し、顕著な効果を奏す
るものである。As is clear from the above examples, the optical recording material of the present invention has the various advantages described above and exhibits remarkable effects.
第１図は、Ａｙ４Ｓｊ、０４の反射分光特性全、波長と
反射率との関係で表すクラスである。第２図’ｄ 、Ａ
ｇ３ ｓ］、 ｏ４の分光感度を、照射波長と光照射に
よる波１％７［］０ｎｍＫおける反射率の低下との関係
で表すグラフである。第６図け、Ａｙ２Ｓ１０３の反射
分光特性を、前記関係で表すグラフ、第４図は、Ａ ｙ
２ Ｓｌ ０３の分光感度を、前記関係で表すグラフ、
第５図は、３８０℃で熱処理！、たＡ７２Ｓ１０３ の
反射分光特性を、前記関係で表すグラフ、第６図は、Ａ
ｇ３８１２０ｓ の反射分光特性を、前記関係で表すグ
ラフ、第７図は、ＡＰ２５ｊ２０６の分光感度を、前記
関係で表すグラフ、第８図は、３８０℃で熱処理したＡ
Ｓｌ１２５ｉ２０５の反射分光特性を、前記関係で表す
グラフである。
特許出願人 日本電信電話公社
代理人 中 本 宏
第 ｌ 図
波長 （ｎｍン
第２図
ｕ６射波長（ｎｍ）
第 ３ 図
波長（４ｍ）
第４図
照射波長（ｎｍ）
第 、５′ 図
波長（ｎｗｒ）
第 ６ 図
波長（ｎｍ）
第 ７ 図
照射波長（（ｒｍ）
第３図
波長（ｎｒｎ ）
手続補正書（自発補正）
昭和５７年１０月１ 日
特許庁長官 若 杉 和 夫 殿
１、事件の表示 昭和５６年特許願第１８４４９６号
２、発明の名称 光学記録材料
５、補正をする者
事件との関係 特許出願人
住 所 東京都千代田区内幸町１丁目１番６号名
称 （４２２’）日本電信電話公社代表者 真 藤
恒
西新橋中央ビル３０２号
電話（４３７）−３４６７
氏 名 弁理士（７８５０） 中 本
宏５、補正命令の日付 （自発補正）
＆補正の対象
（１） 明細書の発明の詳細な説明の欄ｌ補正の内容
明細書の発明の詳細な説明の欄を下記のとおり補正する
。
（１）明細書第２頁９行の「定着」を１現像Ｊと補正す
る。
（２） 同第３頁１３行の１定着」を「現像」と補正
する。FIG. 1 shows all the reflection spectral characteristics of Ay4Sj, 04, and the class represented by the relationship between wavelength and reflectance. Figure 2'd, A
3 is a graph showing the spectral sensitivity of o4 in terms of the relationship between the irradiation wavelength and the decrease in reflectance at a wavelength of 1%7[]0 nmK due to light irradiation. Figure 6 is a graph showing the reflection spectral characteristics of Ay2S103 using the above relationship.
2 A graph representing the spectral sensitivity of Sl 03 using the above relationship,
Figure 5 shows heat treatment at 380℃! A graph showing the reflection spectral characteristics of A72S103 using the above relationship, FIG.
Fig. 7 is a graph showing the spectral sensitivity of AP25j206 using the above relationship, and Fig. 8 is a graph showing the reflection spectral characteristics of AP25j206 using the above relationship.
It is a graph showing the reflection spectral characteristics of Sl125i205 using the above relationship. Patent applicant Hiroki Nakamoto, agent for Nippon Telegraph and Telephone Public Corporation Figure wavelength (nm) Figure 2 U6 radiation wavelength (nm) Figure 3 Wavelength (4m) Figure 4 Irradiation wavelength (nm) Figure 4 Wavelength (nm) nwr) Figure 6 Wavelength (nm) Figure 7 Irradiation wavelength ((rm) Figure 3 Wavelength (nrn) Procedural amendment (voluntary amendment) October 1, 1981 Kazuo Wakasugi, Commissioner of the Patent Office, Case 1 Indication: 1984 Patent Application No. 184496 2, Title of the invention: Optical recording material 5, Relationship to the case of the person making the amendment Patent applicant address: 1-1-6 Uchisaiwai-cho, Chiyoda-ku, Tokyo
Name (422') Nippon Telegraph and Telephone Public Corporation Representative Makoto Fuji Tsuneishi Shinbashi Chuo Building 302 Telephone (437)-3467 Name Patent Attorney (7850) Nakamoto
Hiroshi 5, Date of amendment order (voluntary amendment) & Subject of amendment (1) Detailed explanation of the invention column in the specification l Contents of amendment The detailed explanation of the invention column in the specification is amended as follows. (1) "Fixing" on page 2, line 9 of the specification is corrected to 1 development J. (2) Correct "1 fixing" on page 3, line 13 of the same page to "developing."
Claims (1)
徴とする光学記録材料。 ２ 該化合物が、Ａグ４Ｓｉ○４、Ａｙ２ＳｉＯ３及び
Ａグ。 ３ｉ２０５ よりなる群から選釈した化合物である特
許請求の範囲第１項に記載の光学記録材料。[Scope of Claims] An optical recording material characterized by comprising a tAyz05102-based compound. 2 The compounds are Ag4Si○4, Ay2SiO3 and Ag. The optical recording material according to claim 1, which is a compound selected from the group consisting of 3i205.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56184496A JPS5887183A (en) | 1981-11-19 | 1981-11-19 | Optical recording material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56184496A JPS5887183A (en) | 1981-11-19 | 1981-11-19 | Optical recording material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5887183A true JPS5887183A (en) | 1983-05-24 |
| JPS6356920B2 JPS6356920B2 (en) | 1988-11-09 |
Family
ID=16154194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56184496A Granted JPS5887183A (en) | 1981-11-19 | 1981-11-19 | Optical recording material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5887183A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5401609A (en) * | 1991-12-13 | 1995-03-28 | Tdk Corporation | Optical recording medium and its production |
| CN103372431A (en) * | 2012-04-25 | 2013-10-30 | 三星电子株式会社 | Visible light sensitive photocatalyst, method of producing visible light sensitive photocatalyst, and electrochemical water decomposition cell and organic material decomposition system each including visible light sensitive photocatalyst |
-
1981
- 1981-11-19 JP JP56184496A patent/JPS5887183A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5401609A (en) * | 1991-12-13 | 1995-03-28 | Tdk Corporation | Optical recording medium and its production |
| CN103372431A (en) * | 2012-04-25 | 2013-10-30 | 三星电子株式会社 | Visible light sensitive photocatalyst, method of producing visible light sensitive photocatalyst, and electrochemical water decomposition cell and organic material decomposition system each including visible light sensitive photocatalyst |
| CN103372431B (en) * | 2012-04-25 | 2017-05-24 | 三星电子株式会社 | Visible light sensitive photocatalyst, method of producing visible light sensitive photocatalyst, and electrochemical water decomposition cell and organic material decomposition system each including visible light sensitive photocatalyst |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6356920B2 (en) | 1988-11-09 |
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