JPS5884475A - Photo coupler - Google Patents
Photo couplerInfo
- Publication number
- JPS5884475A JPS5884475A JP56181883A JP18188381A JPS5884475A JP S5884475 A JPS5884475 A JP S5884475A JP 56181883 A JP56181883 A JP 56181883A JP 18188381 A JP18188381 A JP 18188381A JP S5884475 A JPS5884475 A JP S5884475A
- Authority
- JP
- Japan
- Prior art keywords
- light
- transparent substrate
- thin
- receiving element
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 abstract description 12
- 230000008878 coupling Effects 0.000 abstract description 6
- 238000010168 coupling process Methods 0.000 abstract description 6
- 238000005859 coupling reaction Methods 0.000 abstract description 6
- 238000005401 electroluminescence Methods 0.000 abstract 3
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910001954 samarium oxide Inorganic materials 0.000 description 1
- 229940075630 samarium oxide Drugs 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は電界発光素子を使用したフォトカプラに関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photocoupler using an electroluminescent element.
従来のフォトカプラは、その構造が、一対のリードフレ
ームの一方のフレームに発光素子を、他方のフレームに
受光素子をそれぞれ装着し、上記発光素子と受光素子を
所定間隔を維持して対向起重し、画素子間を透孔性樹脂
でモールドする等した後、この状態でシリンダやボック
ス内へ収納固定してなるものが多い。A conventional photocoupler has a structure in which a light emitting element is mounted on one of a pair of lead frames and a light receiving element is mounted on the other frame, and the light emitting element and the light receiving element are stacked facing each other with a predetermined distance maintained. However, in many cases, the space between the pixel elements is molded with a porous resin, and then the device is housed and fixed in a cylinder or box in this state.
しかし、上記のようなフォトカプラにあっては、上記発
光素子及び受光素子をそれぞれ別個のリードフレームに
装着せねばならず、その工数と手間がかかることとなり
、また、画素子間をモールドする際に、画素子の高精度
な光学的結合を得るように厳密に管理せねばならず、こ
のモールド工程やパッケージエ稈を高精度に行なう必要
があるため生産性が低下する型置となる等の問題点を有
している。However, in the photocoupler described above, the light emitting element and the light receiving element must be mounted on separate lead frames, which requires a lot of man-hours and effort. In addition, it is necessary to strictly control the optical coupling of the pixel elements with high precision, and the molding process and packaging process must be performed with high precision, resulting in mold placement that reduces productivity. There are problems.
この発明は上記問題点に鑑みなされたもので、発光素子
と受光素子をそれぞれ別々のリードフレームに装着する
手間を省き、また画素子の高精度の光学的結合を容易に
得ることのでζるフォトカプラを提供することを目的と
する。This invention was made in view of the above problems, and it eliminates the trouble of mounting the light emitting element and the light receiving element on separate lead frames, and it also makes it possible to easily obtain high-precision optical coupling of the pixel elements. The purpose is to provide couplers.
以下この発明の一実施例を図面を用いて詳細に説明する
。An embodiment of the present invention will be described in detail below with reference to the drawings.
この発明のフォトカプラは第１図に示すように、ガラス
やセラミックあるいは可撓性を有するフィルム等からな
る薄板状の透明な基板１の一方の面上に＊＊構造の電界
発光素子２を形成するとともに、他方の面上に薄膜構造
の受光素子３を形成し、上記電界発光素子２の発光領域
と上記受光素子３の受光領域と゛を上記透明基板１を介
して対向させることで、画素子が光学的に結合するよう
に構成されている。As shown in FIG. 1, the photocoupler of the present invention has an electroluminescent element 2 having a ** structure formed on one surface of a thin transparent substrate 1 made of glass, ceramic, flexible film, etc. At the same time, a light-receiving element 3 having a thin film structure is formed on the other surface, and the light-emitting area of the electroluminescent element 2 and the light-receiving area of the light-receiving element 3 are made to face each other with the transparent substrate 1 in between. are configured to be optically coupled.
上記電界発光素子２は、第２図に示すように二重絶縁構
造となっており、発光層６の両面にそれぞれ第１誘導体
層５ａと第２誘導体層５ｂとが添着され、これらが上記
透明基板１の一方の面上に添着された透明電極１１４の
上へ積層され、更゛に上記第２誘導体１ｉ５ｂの上面へ
電極層７が添着されている。The electroluminescent device 2 has a double insulation structure as shown in FIG. The transparent electrode 114 attached to one surface of the substrate 1 is laminated, and the electrode layer 7 is further attached to the upper surface of the second dielectric 1i5b.
上記受光素子３は、同じく第２図に示すように、上記透
明基板１の他方の面上に添着された透明電極１１８と、
電極層１０との間に光導電効果を呈する受光層９を挾む
ようにして積層形成されている。As also shown in FIG. 2, the light receiving element 3 includes a transparent electrode 118 attached to the other surface of the transparent substrate 1;
The light-receiving layer 9 exhibiting a photoconductive effect is sandwiched between the electrode layer 10 and the light-receiving layer 9 .
そして、上記電界発光素子２と受光素子３の各々の透明
電極一層４，８はそれらの外縁部が一部分上記透明基板
１上に露出しており、これら露出面と上記電極層７，１
０にはそれぞれ入力側リード端子１１ａ、１１ｂ及び出
力側リード端子１２ａ。The outer edges of the transparent electrode layers 4 and 8 of each of the electroluminescent element 2 and the light receiving element 3 are partially exposed on the transparent substrate 1, and these exposed surfaces and the electrode layers 7 and 1
0 has input side lead terminals 11a, 11b and output side lead terminal 12a, respectively.
１２ｂが接続されている。12b is connected.
上記のような簿膜構造のフォトカプラを形成するには、
例えば上記透明基板１上に電界発光素子２を形成する手
順として、まず上記透明基板１上に蒸着法、スパッタ法
、ディップ法等により上記透明電極４を添着した後、蒸
着法あるいはスパッタ法により、チタン酸バリウム（Ｂ
ａ Ｔｉ ０３ ） 。To form a photocoupler with a film structure like the one above,
For example, as a procedure for forming the electroluminescent element 2 on the transparent substrate 1, first, the transparent electrode 4 is attached onto the transparent substrate 1 by vapor deposition, sputtering, dipping, etc., and then by vapor deposition or sputtering. Barium titanate (B
aTi03).
酸化サマリウム（Ｓｌ、Ｌ Ｏｊ） 、酸化イツトリ
ウム（Ｙ２０３）、窒化シ’）コン（Ｓ！３ Ｎｐ ）
。Samarium oxide (Sl, L Oj), yttrium oxide (Y203), silicon nitride (S!3 Np)
.
酸化タンタル（ＴａｚＯｒ）等の強誘電体材料で第１誘
導体層５８を形成し、次に付活剤のマンガン（Ｍｎ ）
を硫化亜鉛（ＺｎＳ）に微量ドーピングした発光材料（
ＺｎＳ：Ｍｎ）を用いて発光層６を形成し、更に第２誘
導体層５ｂを形成する。A first dielectric layer 58 is formed of a ferroelectric material such as tantalum oxide (TazOr), and then manganese (Mn) as an activator is formed.
A luminescent material made by doping zinc sulfide (ZnS) with a small amount of
A light emitting layer 6 is formed using ZnS:Mn), and a second dielectric layer 5b is further formed.
この第２誘導体１１５ｂは上記第１誘導体１１５ａと必
ずしも同一材質でなくても良い。そして、最後にアルミ
ニウム（ＡＩり等からなる金属電極１Ｉ１７を形成する
ことで薄膜構造の電界発光素子２を透明基板１上に形成
することができる。This second dielectric 115b does not necessarily have to be made of the same material as the first dielectric 115a. Finally, by forming a metal electrode 1I17 made of aluminum (AI or the like), an electroluminescent element 2 having a thin film structure can be formed on the transparent substrate 1.
また、受光素子３を形成する場合にも同様にして、まず
透明基板１上に透明電極層８を添着した後、グロー放電
あるいはスパッタ法によってアモルファス・シリコン膜
を形成し、Ｐ形又はＮ形の不純物をドーピングして光導
電効果を呈する受光層９を形成する。この受光層９はＣ
ｄＳ系の光導電セルでも良い。そして、この受光１Ｉ１
９の上に金属電極層１０を添着することで薄膜構造の受
光素子３を透明基板１上に形成することができる。Similarly, when forming the light-receiving element 3, first the transparent electrode layer 8 is attached onto the transparent substrate 1, and then an amorphous silicon film is formed by glow discharge or sputtering. A light-receiving layer 9 exhibiting a photoconductive effect is formed by doping with impurities. This light-receiving layer 9 is made of C.
A dS-based photoconductive cell may also be used. And this light reception 1I1
By attaching the metal electrode layer 10 on the transparent substrate 9, the light receiving element 3 having a thin film structure can be formed on the transparent substrate 1.
上記のように透明基板１の両面にそれぞれＩＩ！構造の
電界発光素子２と受光素子３を形成することで、上記電
界発光素子２の発光領域と上記受光素子３の受光領域が
上記透明基板１を介して光学的に結合され、しかも、こ
の光学的結合において、画素子の光路の一致等に特別な
注意をせずども容易に高精度な光学的結合を得ることが
できることとなる。II! on both sides of the transparent substrate 1 as described above! By forming the electroluminescent element 2 and the light receiving element 3 of this structure, the light emitting region of the electroluminescent element 2 and the light receiving region of the light receiving element 3 are optically coupled via the transparent substrate 1, and this optical In optical coupling, highly accurate optical coupling can be easily obtained without paying special attention to the coincidence of the optical paths of the pixel elements.
また、上記各ＷＩｖＡＩｍは数千オングストロームから
数ミクロンの厚さの非常に薄いものであり、上記発光領
域と受光領域が上記透明基板１と透明簿膜群を介して近
接しているため、光学的損失を極めて少なくすることが
できる。Furthermore, each of the WIvAIm is extremely thin with a thickness ranging from several thousand angstroms to several microns, and since the light emitting region and light receiving region are close to the transparent substrate 1 via the transparent film group, optical Loss can be extremely reduced.
以上説明したように、この発明のフォトカプラにあって
は、１つの透明基板の両面にそれぞれ薄膜構造の電界発
光素子と受光素子を形成したことにより、従来のように
両−素子を別々のリードフレームに装着する手間や画素
子の光学的結合作業に厳密さを要求されることがなく、
容易かつ能率良く画素子が高精度に光学的結合されたフ
ォトカプラを形成するととができ、生産性を向上させる
ことができる。また、入出力用のリード端子を接続する
ためのスペースが少なくてすむためフォトカプラ全体を
小形化することが可能となる等の利点を有している。As explained above, in the photocoupler of the present invention, by forming the electroluminescent element and the light receiving element of thin film structure on both sides of one transparent substrate, the two elements are separated from each other as in the conventional case. There is no need for strict mounting work on the frame or for the optical connection of pixel elements.
A photocoupler in which pixel elements are optically coupled with high precision can be easily and efficiently formed, and productivity can be improved. Further, since less space is required for connecting input/output lead terminals, the photocoupler has the advantage that the entire photocoupler can be made smaller.
第１図は本発明に係るフォトカプラの実施例を示す概念
図、第２図は第１図の拡大説明図である。
１・・・・・・透明基板
２・・・・・・電界発光素子
３・・・・・・受光素子FIG. 1 is a conceptual diagram showing an embodiment of a photocoupler according to the present invention, and FIG. 2 is an enlarged explanatory diagram of FIG. 1. 1... Transparent substrate 2... Electroluminescent element 3... Light receiving element
Claims (1)
光素子を形成するとともに、他方の面上にｉ１膜構造の
受光素子を形成し、かつ上記電界発光素子の発光領域と
上記受光素子の受光領域とを上記透明基板を介して対向
させ、画素子を光学的に結合させてなるフォトカプラ。(1) An electroluminescent element having a thin film structure is formed on one surface of one transparent substrate, and a light receiving element having an i1 film structure is formed on the other surface, and the light emitting area of the electroluminescent element and the light receiving element are formed on the other surface. A photocoupler in which a pixel element is optically coupled with a light receiving area of the element facing each other via the transparent substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56181883A JPS5884475A (en) | 1981-11-13 | 1981-11-13 | Photo coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56181883A JPS5884475A (en) | 1981-11-13 | 1981-11-13 | Photo coupler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5884475A true JPS5884475A (en) | 1983-05-20 |
Family
ID=16108533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56181883A Pending JPS5884475A (en) | 1981-11-13 | 1981-11-13 | Photo coupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5884475A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6136982A (en) * | 1984-07-28 | 1986-02-21 | Alps Electric Co Ltd | Photocoupler |
-
1981
- 1981-11-13 JP JP56181883A patent/JPS5884475A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6136982A (en) * | 1984-07-28 | 1986-02-21 | Alps Electric Co Ltd | Photocoupler |
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