JPS5883514A - Gas insulated electric device - Google Patents
Gas insulated electric deviceInfo
- Publication number
- JPS5883514A JPS5883514A JP56181331A JP18133181A JPS5883514A JP S5883514 A JPS5883514 A JP S5883514A JP 56181331 A JP56181331 A JP 56181331A JP 18133181 A JP18133181 A JP 18133181A JP S5883514 A JPS5883514 A JP S5883514A
- Authority
- JP
- Japan
- Prior art keywords
- container
- electric field
- impurity
- gas
- dielectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 この発明はガス絶縁電気装置に関するもので。[Detailed description of the invention] This invention relates to gas insulated electrical equipment.
#にその絶縁性のガスを封入している密閉タンクすなわ
ち容器内の不純物が耐電圧に悪影響を及ぼさないような
構造を有するガス絶縁電気装置に関するものである。The present invention relates to a gas insulated electrical device having a structure in which impurities in a closed tank or container in which the insulating gas is sealed do not adversely affect the withstand voltage.
ガス絶縁電気装置忙おいて、何等かの原因で容器内に不
純物が入ったり1発生したりすると、このような不純物
には電界強度に応じた静電力によって浮上刃f/が作用
し、この浮上刃f/が不純物の重力f1及び容器との粘
着力f、を上回った場合に、不純物は浮上する。浮上し
た不純物は容器内の電界強度の分布状態、不純物の形状
9重さ。When a gas-insulated electric device is in operation, if impurities enter or are generated in the container for some reason, the levitation blade f/ acts on such impurities due to electrostatic force depending on the electric field strength, and the levitation blade f/ When the blade f/ exceeds the gravity f1 of the impurity and the adhesive force f with the container, the impurity floats to the surface. The floating impurities are determined by the distribution of electric field strength within the container, the shape of the impurities, and the weight of the impurities.
容器表面の状態などKよってきわめて複雑かつ不規則な
移動を行ない。この不純物を介して内絡などの悪い影響
を生ずる。従って、不純物が移動しないようKすること
が従来より考慮されてきた。It moves extremely complicatedly and irregularly depending on the condition of the surface of the container. This impurity causes negative effects such as internal circuits. Therefore, it has been conventionally considered to apply K to prevent the migration of impurities.
第1及び−図は゛従来のガス絶縁電気装置の1例(%開
閉1t−isttit号)を示す図で、ガス絶縁電気装
置として、ガス絶縁母線を示している。密閉タンクすな
わち容器lの内面忙は誘電体の膜コが形成されており、
容器内に封入された絶縁性のガスJで絶縁されて、導体
ダかはぼ容器の中心上に図示されていない絶縁スペーサ
などによって支持されている。Figures 1 and 2 are diagrams showing an example of a conventional gas insulated electric device (percentage switch type), and show a gas insulated bus bar as the gas insulated electric device. A dielectric film is formed on the inner surface of the sealed tank, that is, the container l.
It is insulated by an insulating gas J sealed in the container, and the conductor is supported by an insulating spacer (not shown) over the center of the container.
このような構造のガス絶縁電気装置に於いては、容器内
に不純物が侵入したり発生した場合に1次のように不純
物の移動は抑制される。すなわち誘電体の膜コは課電と
共に分極し、誘電体の膜コの面上(導体側)Kは分極電
荷が現われる。不純物は誘電体の膜コの面上で分極を起
し、不純物と誘電体の膜との間に吸引力f、が作用し、
下向きの力の重力fJ、粘着力f、および吸引力f、の
総和は静電力による浮上刃f、を上回るようにkる。In a gas insulated electrical device having such a structure, when impurities enter or occur in the container, movement of the impurities is suppressed in a first-order manner. In other words, the dielectric film is polarized as a voltage is applied, and a polarized charge appears on the surface (conductor side) of the dielectric film. The impurity causes polarization on the surface of the dielectric film, and an attractive force f acts between the impurity and the dielectric film,
The sum of the downward forces of gravity fJ, adhesive force f, and suction force f exceeds the floating blade f due to electrostatic force.
このため不純物の不規則な移動は抑制される。Therefore, irregular movement of impurities is suppressed.
ところで、このような方法では、第3図に示すよ5K、
例えば金属製の細長い不純物3が侵入又は発生した場合
に、万−s ”/さfユ+f、+f、であると、不純物
は第3図の状態から第参図に示す状態に起き上がり、不
純物3の先端j51の電界が強くなるので、静電力によ
る浮上刃f、が大きくなり、第5図に示すように立上が
って、微少移動をすることがあり、このままでは、かえ
って、絶縁に悪影響を与えてしまう欠点があった。By the way, with this method, as shown in Figure 3, 5K,
For example, when an elongated impurity 3 made of metal enters or occurs, if 10,000-s''/sf +f, +f, the impurity rises from the state shown in Figure 3 to the state shown in Figure 3, and the impurity 3 As the electric field at the tip j51 becomes stronger, the floating blade f due to electrostatic force becomes larger and may rise and move slightly as shown in Fig. 5. If this continues, it will have a negative effect on the insulation. There was a drawback.
この発明は以上Kかんがみてなされたもので。This invention was made in view of the above.
叙上の欠点を無くして、絶縁性能の良好なガス絶縁電気
装置を提供することを目的とし、容器すなわち密閉タン
ク内面の接地側の電界の強い箇所に誘電体の膜を形成し
たことを特色とするガス絶縁電気装置を提供しているも
のである。The aim is to eliminate the above-mentioned drawbacks and provide a gas-insulated electrical device with good insulation performance, and the feature is that a dielectric film is formed on the ground side of the inner surface of the container, that is, the sealed tank, where the electric field is strong. The company provides gas insulated electrical equipment that
以下に1図示する実施例に関してこの発明を説明する。The invention will now be described with reference to one illustrated embodiment.
第6〜を図に示すように、容器l内の比較的均一な電界
の箇所には、先に述べたような誘電体の膜を形成せず、
容器内面で特に電界の強い箇所に限定して誘電体の膜−
〇を形成している。As shown in Figures 6 to 6, a dielectric film as described above is not formed in the area of a relatively uniform electric field within the container l.
Apply dielectric film only to areas with particularly strong electric fields on the inside of the container.
It forms 〇.
例えば第1図では、ガス供給や吸着剤取付および点検の
ため等のために設けられたフランジ部6の内側に、第7
及びt図では、絶縁支持筒りの電界緩和用のシールドリ
ングtや前述の7ランジ乙の内側の電界緩和用のシール
ドリングなどの表面に誘電体の膜コ0を形成している。For example, in FIG. 1, a seventh
In FIGS. and t, a dielectric film 0 is formed on the surfaces of the shield ring t for alleviating the electric field of the insulating support cylinder and the shield ring for alleviating the electric field inside the above-mentioned 7 lunges B.
このようなガス絶縁電気装置の中に不純物5が侵入した
場合K、不純物!は前述の原理で不規則な移動をして容
器/の中を動き回るが、やがて電界の弱いところで浮上
刃f、が小さくなるので。If impurity 5 enters such a gas-insulated electrical device, K, impurity! moves around inside the container by moving irregularly according to the above-mentioned principle, but eventually the floating blade f becomes smaller where the electric field is weak.
フランジ部1の凹部デ嗟電界緩和用のシールドリングt
の容器Iの内面側の電界の弱いところ9′で捕捉されて
しまう。ところで、7ランジ6の内側やシールドリンク
tに誘電性の膜−〇を形成していない場合は、不純物j
K作用する浮上刃f、が弱められないので、一度電界の
強い箇所に移動した不純物jは凹所デやシールドの容器
内面側の電界の弱いところt′に落下しなくなり、この
箇所で微小な動きを継続するととKなる。このような誘
電体の膜−〇を電界の強いところKのみ形成し【おくと
、不純物lはスムー〆に凹部りや電界の弱いところt′
に落下し、確実に捕捉することができる。又、・容器l
の内面の大部分に誘電体の膜を形成する引例の方式は、
それ自体が帯電して、製作や据付中に不純物jを引付は
易いが、この発明においては極めて一部分に限定して膜
−〇を形成するので、製作や据付で万一不純物!を帯電
して引付けても除去することは比較的簡単である。尚。Shield ring t for mitigating electric field in recessed part of flange part 1
is trapped at the weak electric field 9' on the inner surface of the container I. By the way, if the dielectric film -〇 is not formed on the inside of the 7 flange 6 or on the shield link t, impurity j
Since the floating blade f acting on K is not weakened, the impurity j that once moved to a location where the electric field is strong will no longer fall to the location t' where the electric field is weak on the inside surface of the container of the shield or the recess, and at this location, impurity If the movement continues, it will become K. If such a dielectric film 〇 is formed only in the areas K where the electric field is strong, the impurity 1 will smoothly fill the concave areas and areas t' where the electric field is weak.
can be reliably caught. Also, ・Container l
The cited method of forming a dielectric film on most of the inner surface of the
It itself is electrically charged and easily attracts impurities during manufacturing and installation, but in this invention, the film is formed in a very limited area, so in the unlikely event that impurities are attracted during manufacturing or installation! Even if it is charged and attracted, it is relatively easy to remove it. still.
実際の適用に際しては、系統電圧課電前に、予め。In actual application, before applying the grid voltage.
試験用変圧器などで予備電圧を段階的に印加し、不純物
3を電界の弱いところに捕捉するようにする。Preliminary voltage is applied in stages using a test transformer or the like, so that the impurity 3 is trapped in areas where the electric field is weak.
第1及びコ!は従来のガス絶縁電気装置の一部を示しそ
れぞれ第1図は縦断面図、第一図は第7図のIf−IN
Kおける横断面図、第、?−j図は不純物移動態様を示
す縦断面図、第6図はこの発明の一実施例を示す縦断面
図、第7図は他の実障例の縦断面図、第を図は第7図の
実施例の部分■の格大断面図である。
/−・・密閉タンクすなわち容器、コ・・誘電体の膜、
J・・絶縁性のガス、ダ・・導体、!・・不純物、4・
・フランジ部、7・・絶縁支持筒、t・・シールドリン
グ、り・・凹部、t′・・容器の内面側の電界の弱いと
ころ、−〇・・誘電体の膜。
代理人 葛 野 信 −1st and co! 1 shows a part of a conventional gas-insulated electric device, and FIG. 1 is a vertical sectional view, and FIG.
Cross-sectional view at K, No. ? Figure -j is a vertical cross-sectional view showing the impurity movement mode, Figure 6 is a vertical cross-sectional view showing an embodiment of the present invention, Figure 7 is a vertical cross-sectional view of another actual failure example, and Figure 7 is a vertical cross-sectional view showing an embodiment of the present invention. FIG. /-... sealed tank or container, co... dielectric film,
J...Insulating gas, Da...Conductor! ...Impurities, 4.
・Flange part, 7.. Insulating support cylinder, t.. Shield ring, ri.. Recessed part, t'.. Place where the electric field is weak on the inner surface of the container, -〇.. Dielectric film. Agent Shin Kuzuno −
Claims (1)
たガス絶縁電気装置において、前記密閉タンク内面の7
ランジ取付部やシールドの凸部などのように接地側の電
界の強いところに誘電体の膜を形成したことを特徴とす
るガス絶縁電気装置。In a gas-insulated electrical device equipped with a sealed tank filled with a high-performance insulating gas, 7 on the inner surface of the sealed tank
A gas-insulated electrical device characterized in that a dielectric film is formed in areas where the electric field is strong on the ground side, such as the flange attachment part or the convex part of the shield.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56181331A JPS5883514A (en) | 1981-11-11 | 1981-11-11 | Gas insulated electric device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56181331A JPS5883514A (en) | 1981-11-11 | 1981-11-11 | Gas insulated electric device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5883514A true JPS5883514A (en) | 1983-05-19 |
Family
ID=16098820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56181331A Pending JPS5883514A (en) | 1981-11-11 | 1981-11-11 | Gas insulated electric device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5883514A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54154091A (en) * | 1978-05-24 | 1979-12-04 | Bbc Brown Boveri & Cie | Gas insulated covered capsule high voltage conductor |
-
1981
- 1981-11-11 JP JP56181331A patent/JPS5883514A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54154091A (en) * | 1978-05-24 | 1979-12-04 | Bbc Brown Boveri & Cie | Gas insulated covered capsule high voltage conductor |
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