JPS5881970U

JPS5881970U - semiconductor laser

Info

Publication number: JPS5881970U
Application number: JP17650681U
Authority: JP
Inventors: 上野　眞資; 川野　英夫; 松本　尚平
Original assignee: 日本電気株式会社
Priority date: 1981-11-27
Filing date: 1981-11-27
Publication date: 1983-06-03

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of the drawing]

第１図は閾値電流の２倍以上にわたって安定な基本横モ
ード発振を維持するのに必要な構造パラメータである実
効的な屈折率差Δ−’）ｕｓ溝幅Ｗ１実効的な電流注入
領域幅Ｓｅの組合わせの範囲を示した図であり、斜線で
示した領域が許容範囲である。第２図は、溝幅２．５μ
ｍ、実効的な屈折率差ΔηＢ＝９ＸｌＯ−３としたとき
、実効的な電流注入領域幅Ｓｅの変化に対する基本横モ
ード発振が維持される領域を発振閾値の倍率Ｉｔｈｌ／
ＩｔｈＯで示したもので、実線は計算結果であり白丸は
実験結果である。第３図は、実効的な注入電流領域幅Ｓ
ｅの変化に対する閾値電流の変化を示したもので、実線
は計算結果であり゛、各バーは実験結果であり、１本の
バーは、半導体レーザ５０個の測定結果に相当する。Ｌ
は共振器長である。第４図□は、本考案によって得られ
る反半導体レーザの断面図、第５図Ａは、本考案によっ
て得られた半導体レーザ及び従来の半導体レーザのパル
ス及びＣＷ時での電流光出力特性を示し、実線は本考案
の半導体レーザの特性、点線は従来のものの特性である
。′第５図Ｂ及びＣは本考案による半導体レーザのＣＷ
時での活性層水平横方向の近視野像及び遠視野像を示し
たものである。図において、１０・・・・・−ｎ　−ＩｎＰ基板−１１
・・・・・・溝、ｌ　２−−−−−−ｎ−ＩｎＧａＡｓ
Ｐガイド層（λ：１．１−μｍ）、１３・・・・・・ア
ンドープＩｎＧａＡｓＰ活性層（λ＝１．３μｍ）、ｌ
　４−−−−−−Ｐ−ＩｎＰクラット層、１５−−−　
・・・ｎ−１ｎＧａＡｓＰキャップ層（λ＝１．１μｍ
）、１６・・・・・−Ｃｄ拡散領域、１７・・・・・・
Ｐ形電極、１８・・・・・・ｎ形電極、をそれぞれ示す
。第４−胆１６／　　− 濤　　ｔｉｗｔ−ＪFigure 1 shows the effective refractive index difference Δ-') us groove width W1 effective current injection region width Se, which is a structural parameter necessary to maintain stable fundamental transverse mode oscillation over twice the threshold current. 2 is a diagram showing the range of combinations, and the shaded area is the permissible range. Figure 2 shows groove width 2.5μ
m, effective refractive index difference ΔηB = 9
In the graph shown in IthO, the solid line is the calculation result and the white circle is the experimental result. Figure 3 shows the effective injection current region width S
It shows the change in threshold current with respect to the change in e, where the solid line is the calculation result, each bar is the experimental result, and one bar corresponds to the measurement result of 50 semiconductor lasers. L
is the cavity length. Figure 4□ is a cross-sectional view of the anti-semiconductor laser obtained by the present invention, and Figure 5A shows the current optical output characteristics of the semiconductor laser obtained by the present invention and the conventional semiconductor laser at pulse and CW. , the solid line is the characteristic of the semiconductor laser of the present invention, and the dotted line is the characteristic of the conventional one. 'Figures B and C are CW of the semiconductor laser according to the present invention.
This figure shows a near-field image and a far-field image in the horizontal and lateral directions of the active layer at the same time. In the figure, 10...-n-InP substrate-11
・・・・・・Groove, l 2-------n-InGaAs
P guide layer (λ: 1.1-μm), 13... Undoped InGaAsP active layer (λ = 1.3 μm), l
4------P-InP crat layer, 15---
...n-1nGaAsP cap layer (λ=1.1μm
), 16...-Cd diffusion region, 17...
A P-type electrode and 18...n-type electrodes are shown, respectively. 4th - gall 16 / - tiwt-J

Claims

[Scope of utility model registration request]

It has an active layer and a guide layer adjacent to at least one side of the active layer, which has a refractive index smaller than that of the active layer and larger than that of the cladding layer, and the guide layer has a striped convex shape in the cavity length direction. In a semiconductor laser having a structure in which a layered structure having a sub-region is sandwiched between cladding layers, the width W of the groove in the cladding layer corresponding to the convex area of the guide layer is set to 5 μm or less, and along this groove width. The effective refractive difference Δη8 grouped in the horizontal direction of the active layer is set to be 5×lO″″3 or more, and the ratio Se/W of the effective current injection region width Se to the groove width W
1. A semiconductor laser characterized in that: (W LD )/W or more (LD indicates carrier diffusion length).