JPS5881332A - Two-way switch circuit - Google Patents

Two-way switch circuit

Info

Publication number
JPS5881332A
JPS5881332A JP56180812A JP18081281A JPS5881332A JP S5881332 A JPS5881332 A JP S5881332A JP 56180812 A JP56180812 A JP 56180812A JP 18081281 A JP18081281 A JP 18081281A JP S5881332 A JPS5881332 A JP S5881332A
Authority
JP
Japan
Prior art keywords
switch
circuit
transistor
switching
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56180812A
Other languages
Japanese (ja)
Inventor
Ryuichiro Iwai
岩井 龍一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56180812A priority Critical patent/JPS5881332A/en
Publication of JPS5881332A publication Critical patent/JPS5881332A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/66Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
    • H03K17/665Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only
    • H03K17/666Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor
    • H03K17/667Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor using complementary bipolar transistors

Abstract

PURPOSE:To increase a switching frequency up to its limit, by providing an interlock so that series-connected transistors (TR) of a two-way switch circuit to prevent turn on at the same time. CONSTITUTION:If one switching circuit (e.g. 10) turns on, a TR (17) turns on by voltage drops across resistances (15 and 16) to make the output of the driving circuit (18') of the other switching circuit (10') ineffective, so both switching circuits never turn on at the same time. Therefore, the timing for switching is unnecessary in driving circuits 18 and 18', simplifying the constitution of the driving circuits.

Description

【発明の詳細な説明】 本発明はトランジスタスイッチを使用したインバータ回
路等に使用される双方向スイッチ回路に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bidirectional switch circuit used in an inverter circuit or the like using transistor switches.

従来、トランジスタスイッチを使用した双方向スイッチ
回路は、直流電源間に2つのトランジスタスイッチを直
列に接続したもので、第1図に示す構成が知られている
。その構成を図面にもとづいて説明すると、直流電源1
の間に逆極性のトランジスタスイッチ2,3が直列に接
続され、それぞれのトランジスタスイッチ2,3にはフ
ライホイールダイオード4,5が逆並列に接続されてい
る。また、トランジスタスイッチ2,3はベースドライ
ブ回路6,7によってそれぞれドライブされ、そのドラ
イブ波形はそれぞれ第2図のムとBに示すように上側と
下側のトランジスタスイッチ2.3が同時にオンとなっ
て電源短絡をおこさないようにt、 、 t2の切換タ
イミング時間をとるようにしている。
2. Description of the Related Art Conventionally, a bidirectional switch circuit using transistor switches is one in which two transistor switches are connected in series between a DC power source, and the configuration shown in FIG. 1 is known. To explain its configuration based on the drawings, the DC power supply 1
Transistor switches 2 and 3 of opposite polarity are connected in series between them, and flywheel diodes 4 and 5 are connected in antiparallel to each transistor switch 2 and 3. The transistor switches 2 and 3 are driven by base drive circuits 6 and 7, respectively, and their drive waveforms are such that the upper and lower transistor switches 2.3 are turned on at the same time, as shown in FIG. The switching timings t, , and t2 are designed to prevent short-circuiting of the power supply.

この切換タイミング時間t1とt2は、それぞれのトラ
ンジスタスイッチ2,3のオフ時のスイッチング時のス
トレージタイムとオフ下降時間の和よりも必らず大きく
する必要がある。しかし、必要以上に大きくすると、パ
ルス幅変調にて使用した場合、特にスイッチング周波数
が高い時、制御範囲の制限を受けることになり、トラン
ジスタそのもののストレージタイムとオフ下降時間もト
ランジスタ自身のバラツキ、コレクタ電流とジャンクシ
ョン温度に対する依存性で変化するなどの点でどの値に
設定するかは大きな問題であった。
The switching timing times t1 and t2 must be made larger than the sum of the switching storage time and the off-fall time of each transistor switch 2, 3 when the transistor switches 2 and 3 are turned off. However, if it is made larger than necessary, when used in pulse width modulation, the control range will be limited, especially when the switching frequency is high, and the storage time and off-fall time of the transistor itself will also be affected by variations in the transistor itself, collector It was a big problem which value to set since it changes depending on the current and junction temperature.

本発明は上述の問題点に鑑みてなされたものでトランジ
スタ自身のバラツキやコレクタ電流、ジャンクション温
度に対する依存性をも含めて、その時点でのスイッチン
グ動作において最小の切換タイミング時間にてト、ラン
ジスタスイッチをスイッチング動作させようとするもの
である。
The present invention has been made in view of the above-mentioned problems, and the present invention allows transistors to be switched at the minimum switching timing time in the switching operation at that point, taking into account variations in the transistor itself, collector current, and dependence on junction temperature. This is intended to perform switching operations.

以下、本発明の実施例を第3図を参照して説明する。図
において、10.10’は順方向に接続したトランジス
タスイッチ11’、11’と第1のダイオード12.1
2’の直列回路に第2のダイオード13 、13・を逆
並列に一統して構成した第1と第2のスイッチ回路で、
このスイッチ回路10..10’はトランジスタスイッ
チ11 、11’が電源線側に位置するように直流電源
14間に直列に接続している。15.16及び15’、
16’は第1と第2のスイッチ回路10.10’の各ト
ランジスタスイッチ11、.11’と第1のダイオード
12.12’の接続点!L、IL’と直流電源14との
間に接続した第1と第2の抵抗で、第2の抵抗15’、
16’は第2のスイッチ回路10’のトランジスタスイ
ッチ11′がオン時に電流が流れるように直流電源14
のプラス側電源線路と接続点a′間に接続し、第1の抵
抗15.16は第1のスイッチ回路1oのトランジスタ
スイッチ11がオン時に電流が流れるように直流電源1
4のマイナス側電源線路と接続点a間に接続している。
Hereinafter, embodiments of the present invention will be described with reference to FIG. In the figure, 10.10' indicates transistor switches 11', 11' and a first diode 12.1 connected in the forward direction.
The first and second switch circuits are configured by integrating second diodes 13 and 13 in antiparallel to a series circuit of 2'.
This switch circuit 10. .. 10' is connected in series between the DC power supply 14 so that the transistor switches 11 and 11' are located on the power line side. 15.16 and 15',
16' denotes each transistor switch 11, . . . of the first and second switch circuits 10, 10'. The connection point between 11' and the first diode 12.12'! The first and second resistors are connected between L, IL' and the DC power supply 14, and the second resistor 15',
16' is a DC power supply 14 so that current flows when the transistor switch 11' of the second switch circuit 10' is turned on.
The first resistor 15.16 is connected between the positive power supply line of the DC power supply 1 and the connection point a' so that current flows when the transistor switch 11 of the first switch circuit 1o is turned on.
It is connected between the negative side power supply line of No. 4 and connection point a.

17.17’は第1と第2の抵抗15.16及び16’
、16’に流れる電流によって動作するトランジスタよ
り成る第1と第2の電流スイッチ手段で、ベースドライ
ブ回路18.18’から供給される第1と第2のスイッ
チ回路10゜10’のお互いのトランジスタスイッチ1
1 、11’のベースドライブ電流をスイッチするよう
接続している。
17.17' are the first and second resistors 15.16 and 16'
, 16', the transistors of the first and second switch circuits 10 and 10' supplied from the base drive circuit 18 and 18'. switch 1
1 and 11' are connected to switch the base drive currents.

以上の構成において、トランジスタスイッチ11とダイ
オード12.13によって第1のスイッチ回路10を、
トランジスタスイッチ11/とダイオード12’、13
’によって第2のスイッチ回路10’を構成しており、
第2の抵抗15’、16’に流れる電流によって動作す
る第2の電流スイッチ手段17′であるトランジスタが
ベースドライブ回路1Bよりのトランジスタスイッチ1
1へのベースドライブ電流をスイッチル、同様に第1の
抵抗15゜16に流れる電流によって動作する第1の電
流スイッチ手段17であるトランジスタがドライブ回路
1B’よりのトランジスタスイッチ11′へのベースド
ライブ電流をスイッチし、相互にインターロックをとっ
てトランジスタスイッチ11あるいは11′に電流が流
れている間は対称となるトランジスタ11′あるいは1
1にたとえベースドライブ回路18または18′よりの
信号があってもベースドライブ電流が流れないようにし
、同時にオンのを防止する。
In the above configuration, the first switch circuit 10 is configured by the transistor switch 11 and the diodes 12 and 13.
Transistor switch 11/and diode 12', 13
' constitutes the second switch circuit 10',
The transistor which is the second current switch means 17' operated by the current flowing through the second resistors 15' and 16' is the transistor switch 1 from the base drive circuit 1B.
Similarly, the first current switching means 17 operated by the current flowing through the first resistor 15 and 16 switches the base drive current to the transistor switch 11' from the drive circuit 1B'. The transistors 11' or 1 which are symmetrical while the current is flowing through the transistor switch 11 or 11' are interlocked with each other.
1, even if there is a signal from the base drive circuit 18 or 18', the base drive current is prevented from flowing, and at the same time it is prevented from being turned on.

以上の説明から明らかなように本発明は、第1と第2の
電流スイッチ手段によって電流をスイッチし、第1と第
2のスイッチ回路が同時にオンとならないようにインタ
ーロックをとったので、トランジスタスイッチのオフ時
のストレージタイム、オフ下降時間の影響を最小限にす
ることができ、スイッチング周波数を限界まで上げるこ
とができる。又、ドライブ回路にてスイッチング切換時
のタイミングをとる必要がないのでドライブ回路を簡素
化できるなどの効果を奏する。
As is clear from the above description, in the present invention, the current is switched by the first and second current switch means, and an interlock is taken so that the first and second switch circuits are not turned on at the same time. The effects of storage time and off-fall time when the switch is turned off can be minimized, and the switching frequency can be raised to its limit. Further, since there is no need to set the timing for switching in the drive circuit, the drive circuit can be simplified.

【図面の簡単な説明】 第1図は従来の双方向スイッチ回路の回路図、第2図は
同回路におけるペースドライブ波形図、第3図は本発明
の実施例にかかる双方向゛スイッチ回路の回路図である
。 1o・・・・・・第1のスイッチ回路、10′・・・・
・・第2のスイッチ回路、11.11’・・・・・・ト
ランジスタスイッチ、12.12’・・・・・・第1の
ダイオード、13゜13′・・・・・・第2のダイオー
ド、14・・・・・・直流電源、16.16・・・・・
・第1の抵抗、15’、16’・・・・・・第2の抵抗
、17・・・・・・第1の電流スイッチ手段、17’・
・・・・・第2の電流スイッチ手段、18.18’・・
・・・・ベースドライブ回路。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 第2図 第3図 1θ
[Brief Description of the Drawings] Fig. 1 is a circuit diagram of a conventional bidirectional switch circuit, Fig. 2 is a pace drive waveform diagram in the same circuit, and Fig. 3 is a bidirectional switch circuit according to an embodiment of the present invention. It is a circuit diagram. 1o...first switch circuit, 10'...
...Second switch circuit, 11.11'...Transistor switch, 12.12'...First diode, 13°13'...Second diode , 14...DC power supply, 16.16...
- First resistor, 15', 16'... Second resistor, 17... First current switch means, 17'.
...Second current switch means, 18.18'...
...Base drive circuit. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 3 Figure 1θ

Claims (1)

【特許請求の範囲】[Claims] 順方向に接続したトランジスタスイッチと第1のダイオ
ードの直列回路に第2のダイオードを逆並列に接続した
第1と第2のスイッチ回路と、前記トランジスタスイッ
チのベースドライブ回路とを備え、前記第1と第2のス
イッチ回路を前記トランジスタスイッチが電源線側に位
置するように直流電源間に直列に接続し、前記第1と第
2のスイッチ回路の各トランジスタと第1のダイオード
の接続点と前記直流電源との間に各トランジスタス・イ
ッチがオンのときに電流が流れる第1と第2の抵抗をそ
れぞれ接続し、かつ、前記抵抗に流れる電流によって動
作する第1と第2の電流スイッチ手段を前記第1と第2
のスイッチ回路の互いのトランジスタスイッチのベース
電流をスイッチするよう接続してなる双方向スイッチ回
路。
The first switch circuit includes first and second switch circuits in which a second diode is connected in antiparallel to a series circuit of a transistor switch and a first diode connected in the forward direction, and a base drive circuit for the transistor switch, and a base drive circuit for the transistor switch. and a second switch circuit are connected in series between the DC power supplies such that the transistor switch is located on the power supply line side, and the connection point between each transistor of the first and second switch circuits and the first diode and the First and second current switch means, each of which is connected to a DC power source and has first and second resistors through which current flows when each transistor switch is on, and is operated by the current flowing through the resistors. The first and second
A bidirectional switch circuit in which the transistor switches in the switch circuit are connected to switch the base currents of each transistor switch.
JP56180812A 1981-11-11 1981-11-11 Two-way switch circuit Pending JPS5881332A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56180812A JPS5881332A (en) 1981-11-11 1981-11-11 Two-way switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56180812A JPS5881332A (en) 1981-11-11 1981-11-11 Two-way switch circuit

Publications (1)

Publication Number Publication Date
JPS5881332A true JPS5881332A (en) 1983-05-16

Family

ID=16089781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56180812A Pending JPS5881332A (en) 1981-11-11 1981-11-11 Two-way switch circuit

Country Status (1)

Country Link
JP (1) JPS5881332A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61277223A (en) * 1985-06-03 1986-12-08 Mitsubishi Electric Corp Semiconductor module
JPS625019A (en) * 1985-07-01 1987-01-12 Toshiyasu Suzuki Ignition device
JPS63262916A (en) * 1987-04-20 1988-10-31 Fujitsu Ltd Semiconductor integrated circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929561A (en) * 1972-07-14 1974-03-16
JPS5544688B2 (en) * 1971-06-05 1980-11-13

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544688B2 (en) * 1971-06-05 1980-11-13
JPS4929561A (en) * 1972-07-14 1974-03-16

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61277223A (en) * 1985-06-03 1986-12-08 Mitsubishi Electric Corp Semiconductor module
JPS625019A (en) * 1985-07-01 1987-01-12 Toshiyasu Suzuki Ignition device
JPS63262916A (en) * 1987-04-20 1988-10-31 Fujitsu Ltd Semiconductor integrated circuit

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