JPS5873835A - Pressure transmitter - Google Patents

Pressure transmitter

Info

Publication number
JPS5873835A
JPS5873835A JP17318982A JP17318982A JPS5873835A JP S5873835 A JPS5873835 A JP S5873835A JP 17318982 A JP17318982 A JP 17318982A JP 17318982 A JP17318982 A JP 17318982A JP S5873835 A JPS5873835 A JP S5873835A
Authority
JP
Japan
Prior art keywords
pressure
diaphragm
fluid
fluid chamber
seal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17318982A
Other languages
Japanese (ja)
Other versions
JPS5841456B2 (en
Inventor
Satoshi Shimada
智 嶋田
Kazuji Yamada
一二 山田
Kazumichi Kimura
木村 一路
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57173189A priority Critical patent/JPS5841456B2/en
Publication of JPS5873835A publication Critical patent/JPS5873835A/en
Publication of JPS5841456B2 publication Critical patent/JPS5841456B2/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G01L19/0627Protection against aggressive medium in general
    • G01L19/0645Protection against aggressive medium in general using isolation membranes, specially adapted for protection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14Housings
    • G01L19/142Multiple part housings
    • G01L19/143Two part housings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To facilitate the manufacture and assembly while ensuring the protection from overloading by preventing a seal disphragm from seating on the body to avoid the application of overload pressure on a pressure detecting element through cooperation with a adjusting diaphragm. CONSTITUTION:When working on a seal diaphragm 24, a pressure P is transmitted to a semiconductor pressure detecting element 34 through a non-compressive liquid 40 sealed into a fluid chambers 28, 36 and a fluid path 38, where the pressure is detected depending on variation in the resistance of a piezo-electric resistance element formed in the element 34. As the measured pressure increases, the sealed liquid 40 in a liquid chamber 28 moves gradually to the fluid chamber 36 to deform an adjusting disphragm 32. This prevents the seal diaphragm 24 from seating on a corrugated wall 26 to avoid the application of overload on the element 34 immediately before the pressure reaches the allowable limit of the element 34 thereby ensuring protection from overloading while facilitating the manufacture and assembly.

Description

【発明の詳細な説明】 〔発明の利用分野〕  、 本発明は、半導体の圧力検出素子を用いて流体の圧力あ
るいは2つの流体圧力の差圧を電気−号に変換して伝送
する圧力伝送器に係シ、特に半導体の圧力検出素子の過
負荷保護装置に関する。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a pressure transmitter that uses a semiconductor pressure detection element to convert fluid pressure or a differential pressure between two fluid pressures into an electrical signal and transmit the electrical signal. In particular, the present invention relates to an overload protection device for a semiconductor pressure detection element.

〔従来技術〕[Prior art]

半導体の圧力検出素子は、検出部の変形が極めて微小で
あるため、過負荷圧力が加わった場合にその圧力が半導
体の圧力検出素子に加わらないように保護することが必
要でおる。
Since the deformation of the detection portion of a semiconductor pressure detection element is extremely small, it is necessary to protect the semiconductor pressure detection element from being subjected to overload pressure when the pressure is applied.

このため第1凶に示す如く、シールダイアフラム2の中
心板4と本体6に設けた0リング8とを接触させること
によって封入液!0の移動を止める方法が一般に採用さ
れてい仝。しかし、上述したように半導体の圧力検出素
子12の変形が極めて微小であるため、封入液の移動量
も同様に少なく、中心板4とOリング8との間隙を極め
て小さくしなければ過負葡保謙を行うことはできない。
For this reason, as shown in the first example, by bringing the center plate 4 of the seal diaphragm 2 into contact with the O-ring 8 provided on the main body 6, the sealed liquid can be removed. A method of stopping the movement of 0 is generally adopted. However, as mentioned above, since the deformation of the semiconductor pressure sensing element 12 is extremely small, the amount of movement of the sealed liquid is similarly small, and unless the gap between the center plate 4 and the O-ring 8 is made extremely small, overloading may occur. It is not possible to practice Hoken.

したがって、第1図に示す構成では、製作2組立て、l
ie整が極めて困難であるという欠点を有してい九。
Therefore, in the configuration shown in FIG.
It has the disadvantage that it is extremely difficult to adjust the IE.

〔発明の目的〕 一 本発明の目的は、上記した従来技術の欠点をなくシ、製
作9組立て等の容易な過負荷保護装置を備えた圧力・伝
送器を提供することにおる。
[Object of the Invention] An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art and to provide a pressure transmitter equipped with an overload protection device that is easy to manufacture and assemble.

〔発明の概要〕[Summary of the invention]

上記目的を達成すべく、本発明の圧力伝送器にFi調節
ダイアフラムが設けられている。この調節ダイアクラム
には圧力検出素子と同様流体の圧力が印加されるように
構成されている。−節ダイアフラムは、過負荷時、シー
ルダイアフラムを本体に着座させて、圧力検出素子に過
負荷圧力がかからないようにして保繰する。
To achieve the above object, the pressure transmitter of the present invention is provided with an Fi adjustment diaphragm. The regulating diacrum is configured to be applied with fluid pressure in the same manner as the pressure sensing element. - When overloaded, the joint diaphragm seats the seal diaphragm on the main body to prevent overload pressure from being applied to the pressure detection element.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実m例を図面に基づいて説明する。 Hereinafter, one example of the present invention will be explained based on the drawings.

第2図において、7ランジ20Aを有する^圧部本体2
0Kit、測定流体の導圧口22とシールダイアフラム
24が設けられ、シールダイアフラム24に対向する画
が波形壁26となっており、シールダイア7.9ム24
′ト波形1126との間に第・誼 lの流体室28が形成されてiる。圧力検出索子・、、
註t11.。
In Fig. 2, the pressure section main body 2 having 7 flange 20A
0Kit, a pressure guiding port 22 for the measurement fluid and a seal diaphragm 24 are provided, and the wall facing the seal diaphragm 24 is a corrugated wall 26, and the seal dia 7.9 mm 24
A first fluid chamber 28 is formed between the first waveform 1126 and the third waveform 1126. Pressure detection cord...
Note t11. .

体30には調節ダイアフラム32が設けられ、この調節
ダイアフラム32の中央部に半導体の圧力検出素子34
が設けられている。圧力検出部本体30と調節ダイアフ
ラム32との間に、第2の流体室36が形成されている
。第1の流体室2Bと第2の流体室36は流体通路38
で接続されておシ、第1.第2の流体室28.86と流
体通路38には非圧縮性の封入液40が封入されている
The body 30 is provided with an adjustment diaphragm 32, and a semiconductor pressure detection element 34 is provided in the center of the adjustment diaphragm 32.
is provided. A second fluid chamber 36 is formed between the pressure detection section main body 30 and the adjustment diaphragm 32. The first fluid chamber 2B and the second fluid chamber 36 are connected to a fluid passage 38.
1. The second fluid chamber 28.86 and the fluid passageway 38 are filled with an incompressible fill liquid 40.

42は流体の脈動を吸収する絞シである。42 is a diaphragm that absorbs fluid pulsation.

次に動作について説明する。シールダイアフラム24に
圧力pが作用すると、その圧力が第1゜第2の流体室2
8.36および流体通路38の中に封入され是非圧縮性
の封入液40を介して半導体の圧力検出素子34に伝達
される。これに比例して半導体の圧力検出素子34に選
択拡散法で形成されているピエゾ抵抗素子が抵抗変化を
起すので、これから圧力を知ることができる。第2の流
体室36内の圧力はシールダイアプラム24と調:11
□ 節ダイアフラム3・・2の剛性比によって決まるが、シ
ールダイア79)”m ”24の剛性を極めて小さくす
れば纂2れ流体室二’! 、内の圧力を測定圧pにほぼ
勢しくすることができる。測定圧の増加にともない籐l
の流体室28内にある封入液は徐々にgzの流体室36
に移動し、調節ダイアフラム32が変形する。従ってシ
ールダイアフラム24、これと波形1i26との間の隙
間、調節ダイア72ム32の剛性を適切に設計すれば、
測定圧pが半導体の圧力検出素子34の許容限界圧力に
なる直前にシールダイアフラム24が波形1126に着
座し、これ以上第2の流体室36に圧力を@達しなくな
る。それ故導圧口22に過大な圧力が加わりでも半導体
の圧力検出素子34および調節ダイアフラム32を破損
することがない。また、絞り42の大きさを適切に設計
することによ)、測定圧pに脈動分が含まれる場合にこ
の脈動分を減衰させることが可能で、第2の流体室36
に祉平滑された圧力が伝達される。従って圧力検出索子
34への振動負荷を軽減させる仁とができ、寿命を大幅
に伸ばすことが可能になる。
Next, the operation will be explained. When pressure p acts on the seal diaphragm 24, the pressure is applied to the first and second fluid chambers 2.
8.36 and the fluid passageway 38, and is transmitted to the semiconductor pressure sensing element 34 via a compressible filling liquid 40. In proportion to this, the piezoresistive element formed by the selective diffusion method in the semiconductor pressure detection element 34 causes a resistance change, so that the pressure can be determined from this. The pressure within the second fluid chamber 36 is equal to or less than the seal diaphragm 24.
□ It is determined by the rigidity ratio of the joint diaphragms 3...2, but if the rigidity of the seal diaphragm 79)"m"24 is made extremely small, the fluid chamber 2' will be closed! , the pressure within can be made almost equal to the measured pressure p. As the measuring pressure increases, the rattan l
The sealed liquid in the fluid chamber 28 of gz gradually flows into the fluid chamber 36 of gz.
The adjustment diaphragm 32 is deformed. Therefore, if the seal diaphragm 24, the gap between it and the waveform 1i26, and the rigidity of the adjustment diaphragm 72m 32 are appropriately designed,
Immediately before the measured pressure p reaches the allowable limit pressure of the semiconductor pressure detection element 34, the seal diaphragm 24 seats on the waveform 1126, and the pressure no longer reaches the second fluid chamber 36. Therefore, even if excessive pressure is applied to the pressure guiding port 22, the semiconductor pressure detection element 34 and the adjustment diaphragm 32 will not be damaged. Furthermore, by appropriately designing the size of the orifice 42), if the measured pressure p includes a pulsation component, it is possible to attenuate this pulsation component, and the second fluid chamber 36
The smoothed pressure is transmitted to the Therefore, it is possible to reduce the vibration load on the pressure detection cable 34, and the life of the pressure detection cord 34 can be greatly extended.

篤3図は本発明の他の実施例を示す原理図で、第2図と
同一部分は同じ符号で示しである。第2図と異なるとこ
ろは、半導体の圧力検出素子34が固着されている取付
台44を圧力検出部本体30に固着または、本体と一体
構造とした点におる。alEZ図の構成では調節ダイア
フラム32の固有振動数が低いため、これに装着されて
いる取付台44、半導体の圧力検出素子34を含めた全
体の固有振動数も低く、外部振動に弱いという欠点があ
るが、第3図の構成では、取付台44が圧力検出部本体
30に固着または本体30と一体構造になっているので
、半導体の圧力検出素子34を含む全体の固有振&I数
が高く、外部振動に強いという利点がある。
FIG. 3 is a principle diagram showing another embodiment of the present invention, and the same parts as in FIG. 2 are designated by the same reference numerals. The difference from FIG. 2 is that the mounting base 44 to which the semiconductor pressure detection element 34 is fixed is fixed to the pressure detection section main body 30 or is structured integrally with the main body. In the configuration shown in the alEZ diagram, since the natural frequency of the adjustment diaphragm 32 is low, the natural frequency of the entire body including the mounting base 44 and the semiconductor pressure detection element 34 mounted thereon is also low, and the disadvantage is that it is vulnerable to external vibration. However, in the configuration shown in FIG. 3, the mounting base 44 is fixed to the pressure detection section main body 30 or is integrated with the main body 30, so the natural frequency & I number of the entire structure including the semiconductor pressure detection element 34 is high. It has the advantage of being resistant to external vibrations.

〔発明の効呆〕[Efficacy of invention]

以上本発明によれば、シールダイアフラムと調節ダイア
フラムとの協動作用によシ、シールダイアプラムが本体
に着座して過負荷圧力が半導体の圧力検出素子に印加さ
れないようにし九ため、製作組立等も容易で確実な過負
荷保−の行える圧力伝送器が得られる。
According to the present invention, the seal diaphragm and the adjustment diaphragm can cooperate with each other, and the seal diaphragm is seated on the main body to prevent overload pressure from being applied to the semiconductor pressure sensing element. Therefore, a pressure transmitter that can easily and reliably maintain overload can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

tj&1−は従来の過負荷保護装置を有する圧力伝送器
の断面図、第2図は本発明になる過負荷保護装置を有す
る圧力伝送器の断面図、第3因は第2図の一部変形例を
示′r断面図である。 20・・・受圧部本体、22・・・導圧口、24川シー
ルダイアフラム、26・・・波形壁、28・・・第1の
流体室、30・・・圧力検出部本体、32・・・調節ダ
イアフラム、34・・・半導体の圧力検出素子、36・
・・第2の流体室、38・・・流体通路、40・・・封
入液。 〉L、1 某 1 ω 某 2 口
tj&1- is a sectional view of a pressure transmitter having a conventional overload protection device, FIG. 2 is a sectional view of a pressure transmitter having an overload protection device according to the present invention, and the third factor is a partial modification of FIG. 2. An example is shown in sectional view. DESCRIPTION OF SYMBOLS 20... Pressure receiving part main body, 22... Pressure guiding port, 24 River seal diaphragm, 26... Corrugated wall, 28... First fluid chamber, 30... Pressure detecting part main body, 32...・Adjustment diaphragm, 34...Semiconductor pressure detection element, 36.
...Second fluid chamber, 38...Fluid passage, 40...Filled liquid. 〉L, 1 certain 1 ω certain 2 mouth

Claims (1)

【特許請求の範囲】[Claims] 1、本体にこれと間隙をおいてとシつけられ、本体との
間に第1の流体室を形成するシールダイアフラム、前記
本体にこれと間隙をおいてと9つけられ、本体との間に
第2の流体室を形成する調節ダイアフラム、前記第1の
流体室と第2の流体室とを連結する流体通路、前記本体
にと9つけられ流体の圧力を電気信号に変換する半導体
の圧力検出素子、前記纂1.第2の流体室および流体通
路に封入された封入液とを備え、前記シールダイアフラ
ムは過負荷圧力を受けた時本体に着座するように構成し
たことt−%倣とする圧力伝送器。
1. A seal diaphragm attached to the body with a gap therebetween and forming a first fluid chamber between the body and the body; 9 attached to the body with a gap between the seal diaphragm and the body; a regulating diaphragm forming a second fluid chamber; a fluid passage connecting the first fluid chamber and the second fluid chamber; a semiconductor pressure sensor attached to the main body and converting fluid pressure into an electrical signal; Element, the above-mentioned collection 1. A pressure transmitter comprising a second fluid chamber and a liquid sealed in a fluid passage, wherein the seal diaphragm is configured to sit on the main body when overload pressure is applied.
JP57173189A 1982-10-04 1982-10-04 pressure transmitter Expired JPS5841456B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57173189A JPS5841456B2 (en) 1982-10-04 1982-10-04 pressure transmitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57173189A JPS5841456B2 (en) 1982-10-04 1982-10-04 pressure transmitter

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4453374A Division JPS573897B2 (en) 1974-04-22 1974-04-22

Publications (2)

Publication Number Publication Date
JPS5873835A true JPS5873835A (en) 1983-05-04
JPS5841456B2 JPS5841456B2 (en) 1983-09-12

Family

ID=15955739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57173189A Expired JPS5841456B2 (en) 1982-10-04 1982-10-04 pressure transmitter

Country Status (1)

Country Link
JP (1) JPS5841456B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6227637A (en) * 1985-07-29 1987-02-05 Chino Corp Pressure sensor
JPS6227638A (en) * 1985-07-29 1987-02-05 Chino Corp Pressure sensor
JPH02118847U (en) * 1989-03-09 1990-09-25
CN104330197A (en) * 2014-10-16 2015-02-04 宝鸡百事得控制技术有限公司 High pressure resistant overload pressure transmitter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5535920A (en) * 1978-09-04 1980-03-13 Tatsukazu Oiwa Drinking water conditioning-treating apparatus
JPS57141199A (en) * 1981-02-25 1982-09-01 Aloka Co Ltd Ultrasonic wave probe

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5535920A (en) * 1978-09-04 1980-03-13 Tatsukazu Oiwa Drinking water conditioning-treating apparatus
JPS57141199A (en) * 1981-02-25 1982-09-01 Aloka Co Ltd Ultrasonic wave probe

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6227637A (en) * 1985-07-29 1987-02-05 Chino Corp Pressure sensor
JPS6227638A (en) * 1985-07-29 1987-02-05 Chino Corp Pressure sensor
JPH02118847U (en) * 1989-03-09 1990-09-25
CN104330197A (en) * 2014-10-16 2015-02-04 宝鸡百事得控制技术有限公司 High pressure resistant overload pressure transmitter

Also Published As

Publication number Publication date
JPS5841456B2 (en) 1983-09-12

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