JPS63113331A - Pressure sensor - Google Patents
Pressure sensorInfo
- Publication number
- JPS63113331A JPS63113331A JP25859886A JP25859886A JPS63113331A JP S63113331 A JPS63113331 A JP S63113331A JP 25859886 A JP25859886 A JP 25859886A JP 25859886 A JP25859886 A JP 25859886A JP S63113331 A JPS63113331 A JP S63113331A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- semiconductor
- pressure sensor
- detection chamber
- buffer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000012530 fluid Substances 0.000 claims abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000010349 pulsation Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体拡散抵抗のピエゾ抵抗効果を利用して圧
力を電気信号に変換する半導体圧力センサに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor pressure sensor that converts pressure into an electrical signal by utilizing the piezoresistance effect of a semiconductor diffused resistor.
従来の技術
半導体圧力センサは、周知の如くに、シリコンチップに
拡散抵抗体が埋必込まれているものであるが、その受圧
部は非常に薄く形成されており、これに加えてシリコン
は超弾性体であるので、受圧部に加わる圧力が成る範囲
を越えると突然破壊に至る。As is well known, in conventional semiconductor pressure sensors, a diffused resistor is embedded in a silicon chip, but the pressure receiving part is formed very thin, and in addition, silicon is extremely thin. Since it is an elastic body, if the pressure applied to the pressure receiving part exceeds a certain range, it will suddenly break.
そこで、従来においては、オリフィスの原理を利用して
脈動防止効果を持たせるようにしているが、流体が液体
の状態で配管内に満たされてしまうと、圧力のみが伝え
られてオリフィスの脈動防止効果がなくなり、脈動やサ
ージ圧が半導体圧力センサに伝わって破壊を早めている
。Conventionally, the orifice principle is used to prevent pulsation, but if the fluid fills the pipe in a liquid state, only pressure is transmitted and the orifice prevents pulsation. It is no longer effective, and pulsations and surge pressure are transmitted to the semiconductor pressure sensor, accelerating its destruction.
発明が解決しようとする問題点
本発明は上記した点に着目して為されたものであり、圧
力検出室において緩衝体を介在させることにより、オリ
フィスを準じて圧力検出室に導入される脈動やサージ圧
を該緩衝体で吸収して圧力センサには静圧が伝わる様に
し、半導体圧力センサの耐圧力を高めることを意図する
ものである。Problems to be Solved by the Invention The present invention has been made with attention to the above-mentioned points, and by interposing a buffer in the pressure detection chamber, the pulsation and vibrations introduced into the pressure detection chamber in the same way as an orifice can be reduced. The purpose is to absorb surge pressure with the buffer so that static pressure is transmitted to the pressure sensor, thereby increasing the withstand pressure of the semiconductor pressure sensor.
問題点を解決するための手段
上記の目的を達成するため、本発明においては、オリフ
ィスからの導入流体圧力を半導体圧力センサチップに伝
達するようにして成り、圧力検出室において圧力緩衝体
を設ける構成を採用した。Means for Solving the Problems In order to achieve the above object, the present invention has a configuration in which the pressure of the fluid introduced from the orifice is transmitted to the semiconductor pressure sensor chip, and a pressure buffer is provided in the pressure detection chamber. It was adopted.
実施例
第１図において、１は筐体であり、アルゴン溶接した蓋
体２を介して接手３が設けられている。Embodiment In FIG. 1, 1 is a housing, and a joint 3 is provided through a lid 2 which is welded with argon.
筐体１と蓋体２間には周縁部を固定してダイヤフラム４
が設けられ、接手側に圧力検出室Ｒ８と筐体側に圧力伝
達室Ｒ２を区画する。接手３にはねじ溝を有するオリフ
ィス５が形成されて圧力検出室に連通している。A diaphragm 4 is installed between the housing 1 and the lid 2 by fixing the peripheral part.
is provided to partition a pressure detection chamber R8 on the joint side and a pressure transmission chamber R2 on the housing side. An orifice 5 having a threaded groove is formed in the joint 3 and communicates with the pressure detection chamber.
筐体１内には支持体６が螺合して固着され、この際に両
者間にはシールパツキン７が介在されて圧力伝達室Ｒ２
を密封する。８は半導体拡散抵抗のピエゾ抵抗効果を利
用して圧力を電気信号に変換するダイヤフラム型半導体
圧力センサチップであり、圧力伝達室Ｒ２に面して支持
体６上に固定されるものであり、９はその電極である。A support body 6 is screwed and fixed in the housing 1, and at this time, a seal packing 7 is interposed between the two to form a pressure transmission chamber R2.
to be sealed. 8 is a diaphragm type semiconductor pressure sensor chip that converts pressure into an electric signal using the piezoresistance effect of semiconductor diffused resistance, and is fixed on the support body 6 facing the pressure transmission chamber R2; is the electrode.
圧力伝達室Ｒ２には非圧縮性にして熱変化に対して粘度
の変らないシリコンオイル等の液体が充填される。The pressure transmission chamber R2 is filled with a liquid such as silicone oil which is incompressible and whose viscosity does not change with respect to thermal changes.
圧力検出室Ｒ３には圧力緩衝体１０が設けられる。圧力
緩衝体１０は２枚のダイヤフラム１０ａ、１０ｂを重合
して外周部に空気溜りとして環状緩衝部１０Ｃを形成し
たものであり、圧力検出室Ｒ８内においてダイヤフラム
４に接触可能にして浮動し得る状態で組み込まれる。A pressure buffer 10 is provided in the pressure detection chamber R3. The pressure buffer 10 is made by superposing two diaphragms 10a and 10b to form an annular buffer part 10C as an air pocket on the outer periphery, and is in a state where it can come into contact with the diaphragm 4 and float in the pressure detection chamber R8. It is incorporated in.
上記構成において、オリフィス５から圧力検出室Ｒ１に
達した流体圧力は緩衝体１０の中央の受圧面部１０ｅか
ら環状緩衝部１０ｃに達して弱められ、ダイヤフラム４
から圧力伝達室Ｒ２に伝わる。In the above configuration, the fluid pressure reaching the pressure detection chamber R1 from the orifice 5 is weakened by reaching the annular buffer part 10c from the central pressure receiving surface part 10e of the buffer body 10, and is weakened by the diaphragm 4.
The pressure is transmitted to the pressure transmission chamber R2.
第３図の実施例においては、支持体６′に対して圧力セ
ンサチップ８′は逆方向に取り付けられており、ダイヤ
フラムが省かれていて圧力検出室Ｒ′は圧力伝達室を兼
ねており、従って流体圧力は直ちに半導体圧力センサチ
ップ８′の裏面に達 ゛するように構成され、該圧力
検出室Ｒ′において圧力緩衝体１０′が一定範囲浮動し
得る状態で設けられている。In the embodiment shown in FIG. 3, the pressure sensor chip 8' is attached in the opposite direction to the support 6', the diaphragm is omitted, and the pressure detection chamber R' also serves as a pressure transmission chamber. Therefore, the structure is such that the fluid pressure immediately reaches the back surface of the semiconductor pressure sensor chip 8', and the pressure buffer 10' is provided in such a manner that it can float within a certain range in the pressure detection chamber R'.
緩衝体としては、その他において発泡ゴム等をコーティ
ングして外面をシールしたものを用いることが可能であ
る。As the buffer, it is also possible to use a material whose outer surface is sealed by coating with foamed rubber or the like.
発明の効果
本発明は上記した如くに、圧力検出室において圧力緩衝
体を設けて成るものであるから、圧力脈動やサージ圧を
圧力緩衝体により効果的に吸収することができ、半導体
圧力センサチップに静圧を伝えるようにしてその破壊を
防止することができる。Effects of the Invention As described above, since the present invention is provided with a pressure buffer in the pressure detection chamber, pressure pulsations and surge pressure can be effectively absorbed by the pressure buffer, and a semiconductor pressure sensor chip Its destruction can be prevented by transmitting static pressure to it.
第１図は本発明の一実施例についての断面図、第２図は
同上の要部の拡大断面図、第３図は他の実施例について
の断面図である。
５・・・オリフィス、訃・・半導体圧力センサチップ、
Ｒ，、Ｒ’・・・圧力検出室、１０・・・圧力緩衝体。
特許出願人 株式会社鷺宮製作所
第１図
第２図
６”
第３図FIG. 1 is a sectional view of one embodiment of the present invention, FIG. 2 is an enlarged sectional view of the same essential parts, and FIG. 3 is a sectional view of another embodiment. 5... Orifice, butt... semiconductor pressure sensor chip,
R,, R'...pressure detection chamber, 10...pressure buffer. Patent applicant: Saginomiya Seisakusho Co., Ltd. Figure 1 Figure 2 Figure 6" Figure 3
Claims (1)
ップに伝達するようにして成り、圧力検出室において圧
力緩衝体を設けて成ることを特徴とする圧力センサ。A pressure sensor configured to transmit fluid pressure introduced from an orifice to a semiconductor pressure sensor chip, and characterized in that a pressure buffer is provided in a pressure detection chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25859886A JPS63113331A (en) | 1986-10-31 | 1986-10-31 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25859886A JPS63113331A (en) | 1986-10-31 | 1986-10-31 | Pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63113331A true JPS63113331A (en) | 1988-05-18 |
Family
ID=17322493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25859886A Pending JPS63113331A (en) | 1986-10-31 | 1986-10-31 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63113331A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997033146A1 (en) * | 1996-03-07 | 1997-09-12 | Hokuriku Electric Industry Co., Ltd. | Pressure sensor module |
| JP2007121196A (en) * | 2005-10-31 | 2007-05-17 | Denso Corp | Pressure sensor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5410025U (en) * | 1977-06-23 | 1979-01-23 | ||
| JPS552009A (en) * | 1978-06-21 | 1980-01-09 | Ricoh Co Ltd | Ink jet recorder of speed control and bias type |
| JPS60109692A (en) * | 1983-11-17 | 1985-06-15 | 株式会社東芝 | Pressure damper |
-
1986
- 1986-10-31 JP JP25859886A patent/JPS63113331A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5410025U (en) * | 1977-06-23 | 1979-01-23 | ||
| JPS552009A (en) * | 1978-06-21 | 1980-01-09 | Ricoh Co Ltd | Ink jet recorder of speed control and bias type |
| JPS60109692A (en) * | 1983-11-17 | 1985-06-15 | 株式会社東芝 | Pressure damper |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997033146A1 (en) * | 1996-03-07 | 1997-09-12 | Hokuriku Electric Industry Co., Ltd. | Pressure sensor module |
| JP2007121196A (en) * | 2005-10-31 | 2007-05-17 | Denso Corp | Pressure sensor |
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