JPS5873771A - Sputtering device - Google Patents

Abstract

PURPOSE:To obtain thin films of multielement alloys of arbitrary compsns. by an extremely simple method by controlling the relative position relations between a piece of electrode target consisiting of plural pieces of blank materials and a substrate and sputtering speed synchronously. CONSTITUTION:After a vacuum tank 1 is evacuated with a pump 2, a sputtering gas is introduced therein from a cylinder 3 through a flow rate controlling valve 4 and DC voltage is applied between the substrate 5 held on a mechanism 6 and the target 7 on an electrode mechanism 8 by an electric power source 10, whereby the substrate is sputtered. A shutter 13 and a shielding plate 9 are disposed between the target 7 and the substrate 5. Here, a disc consisting of semicircular blank materials A, B is used for the target 7, and is rotated by a moving mechanism 11. In synchronization with the rotation thereof, discharge electric power is changed by a synchronizing mechanism 12. Then the materials A, B are exposed periodically to the opening part of the plate 9, whereby sputtering is accomplished.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a sputtering apparatus for producing a multi-component alloy thin film of arbitrary composition.

Conventionally, known methods for producing multi-component alloy thin films include co-evaporation, vapor phase reduction (CVD), multi-component sputtering, and alloy turquoise sputtering. The co-evaporation method is a method in which raw materials evaporated from several evaporation sources whose temperatures are independently controlled are alloyed and deposited on a substrate. This method requires independent control of the evaporation rate of the raw materials, but it requires a large number of expensive control systems, and composition changes on the substrate due to differences in the relative position of each evaporation source and the substrate. There are some shortcomings that are rare.

In the gas phase reduction method, an alloy is deposited on a substrate by reducing vapors of metal halides and the like with hydrogen gas. In this method, the temperature required for reduction is as high as 700 to 1000°C, and the substrate material must be heat resistant and corrosion resistant to strongly acidic gas VC, which is a reaction product, and the alloy raw material must be stable. It has drawbacks such as being limited to those that produce halides.

In the multi-source sputtering method, the substrate is placed on multiple sputtering electrodes and then moves periodically over the target material. While depositing a periodic multilayer structure film of valley alloying elements, the alloy is formed by atomic diffusion due to heating of the substrate. It is something that becomes. This method requires 11 fixed target electrodes and power supply /b7'(
This has the disadvantage that the device is complicated and expensive.

The alloy target sputtering method is a method of depositing an alloy thin film on a substrate using a target material having an alloy composition. This method has the disadvantage that the composition of the thin film is determined by the target composition, and a film of arbitrary composition cannot be produced from a single target.

The present invention solves the above-mentioned drawbacks of the conventional method, and makes it possible to produce a multi-component alloy thin film of arbitrary composition by an extremely simple method.
1 made of multiple materials in the sputtering method
By synchronously controlling the relative positional relationship between the two electrode targets and the substrate and the sputtering speed, it is possible to manufacture an alloy thin film of any composition. The present invention will be described in detail with reference to the drawings in #51. Figure 1 shows an embodiment of the present invention and shows the basic equipment configuration for DC sputtering. 1 is a vacuum chamber, and 2 is a vacuum pump. 3 is an inert gas, and when it is necessary to produce a nitride alloy or an oxide alloy, an inert gas and oxygen are used. A mixed gas such as . A shutter 13 and a shielding plate 9 are arranged on the four targets facing the target 7 held by the substrate holding mechanism 6 and installed on the sputtering electrode mechanism 8, and on the threshold of the substrate. A sputtering voltage is applied to the Kerat 7 so as to have a negative bias voltage by a current voltage 10.
It is not different from a normal DC sputtering apparatus, and the substrate holding mechanism can be equipped with additional functions such as a substrate heating piece heater and a water cooling shaker for cooling the substrate.

In addition to the above device configuration, the present invention further includes a target moving mechanism 11 for moving the target and a synchronizing mechanism 12' for changing the discharge power in synchronization with the movement of the target. ! : have.

It is an enlarged view of the configuration of the 21st control unit 1 side.

Although the structure and shape of the target part can have various combinations of 11° ridges as described later, in this example, as a deliberately simple structural example, the number of target materials is two types, and the target shape is circular. The fco target material is a composite structure of 0 or more materials, which is formed by processing the plates of materials A and B into a semicircular shape and placing them on the electrode so that the whole becomes a disk. The target moving mechanism 11 rotates the target as shown in FIG. The materials A and B are periodically exposed to the openings of the shielding plate placed above the target by rotational movement, and the target shape for sputtering is rectangular, elliptical, planar, or spherical.

It is possible to use a part of the cylindrical side surface.O As the movement mode corresponding to these target shapes, the former is a reciprocating motion in the plane, and the latter is a pendulum motion centered on the center of the own vehicle to achieve the same cell effect. In this example, Nb and Get
-0 vacuum chamber 1-1 using Art as an inert gas
After exhausting to 0-' Pa, Ar gas was introduced through the flow rate control valve 4, the vacuum chamber pressure was set to 5 Pa, a DC voltage was applied, and the zero discharge power to generate glow discharge sound was controlled by a synchronization mechanism The O applied power, which is controlled in synchronization with the rotational movement of the target, varies depending on the desired film composition.
An example is shown in FIG. 200W when the target Nb material is in the opening of the shield plate, 40W when the Ge material is inserted.
o Power is applied.

The electric current can be cut while the boundary between Nb and Ge is between the shielding plate and the opening s'1skb. In the figure, Nb, Ge, Nb
The mark indicates the target material for the opening of the shield plate. Also,
If it is better to avoid spatter at the boundary, it is possible to close the shutter when the boundary passes by synchronizing the shutter 13, but this is not necessary in this embodiment. ! was not recognized.

Composition t of the Nb-Ge alloy thin film produced by this method
It was analyzed by Auger electron spectroscopy. FIG. 4 shows the change in composition depending on the distance from the in-plane center point. ``Also, Figure 4 shows Nb and G without target movement and power synchronization.
For comparison, the analysis results of a thin film sputtered with only the divided target and the substrate facing each other are also shown. 0 Next, when applying 1 power and placing the cold material into the opening of the shield plate, 2
00W, 20W at the start of sputtering when Go material is present
FIG. 5 shows the analysis results of a film produced by increasing the power consumption continuously from 80 W to 80 W at the end. The compositional analysis of the film was determined by performing Auger electron spectroscopy on the surface layer while scratching the film from the surface with an ion beam scatterer using an argon ion gun, and the horizontal axis shows the distance from the surface. The composition ratio of teeth to Ge' continuously decreases in the film thickness direction from the initial stage of deposition. As described above, according to the present invention, a of any composition can be used.
It is possible to produce aV.

In the above examples, manufacturing examples using the DC sputtering method were shown, but high frequency span nose method, bias sputtering method,
- It is clear that the same effects as in the embodiments can be obtained using any sputtering method such as the magnetology sputtering method. In addition, the target material is limited to pure metal.
There is no alloy, it is te*-r: 4*□□, 8mm. 5. □-Even if the number of target materials is three or more, the same effect can be expected as long as the movement of the target electrode and the applied power can be synchronized. It is also clear that a similar effect can be expected by using a fist that moves the substrate and shielding plate instead of moving the target electrode, or by moving the two relative to each other. According to the invention, 1 liter of any composition
lkk has the advantage that it can be manufactured using an extremely simple sputtering mechanism, and also has the great advantage of having a new function that cannot be achieved with conventional sputtering methods, such as controlling changes in the composition during film deposition.

[Brief explanation of drawings]

Figure 1 shows an example of the device of the present invention, Figure 2 is an enlarged view of the target and its moving mechanism, and Figure 3 shows the electric power applied during discharge in synchronization with the N rotation angle of the target. Figure 4 shows the in-plane valley height of the fc Nb-Ge valley metal thin film produced under the applied and -force conditions shown in Figure 3.
Figure 5 is a diagram showing the composition of near e in comparison with the case of a thin film of the same type of alloy produced without using the mechanism of the present invention.
Using t, the positive discharge power t is constant at 200 W, and Ge
The graph shows the tooth-to-Go composition ratio in the film thickness direction of an Nb-Go thin film sputtered while increasing the power continuously from 120 W to sow. 1... Vacuum chamber, 2... Vacuum exhaust pump, 3... Sputtering gas cylinder, 4...
fiffii4jIl 5... Board, 6...
...Substrate holding mechanism, 7...Target, 9゛. 8... Sputter electrode mechanism, 9... Shielding plate, 10... DC power supply, 11... Target moving mechanism, ν... Synchronization mechanism , 13・i・
... Shutter patent applicant Nippon Telegraph and Telephone Public Corporation Figure 1 Figure 3 Figure 4 Figure 1 Tree ε Medium 1 α Tsuu/) Construction area ＾ Ward (mm) Figure 5 Length dD<1'U/) Shisaku JJm )

Claims (1)

[Claims] A moving mechanism that has a target made of a plurality of materials and can periodically change its relative position by moving either the target or the substrate, or both;
A sputtering apparatus is equipped with a sputtering speed control mechanism that synchronizes with relative positional fluctuations between a target and a substrate, and is capable of producing a multi-component alloy thin film of arbitrary composition.