JPS5870557A - Integrated circuit package - Google Patents

Integrated circuit package

Info

Publication number
JPS5870557A
JPS5870557A JP56168612A JP16861281A JPS5870557A JP S5870557 A JPS5870557 A JP S5870557A JP 56168612 A JP56168612 A JP 56168612A JP 16861281 A JP16861281 A JP 16861281A JP S5870557 A JPS5870557 A JP S5870557A
Authority
JP
Japan
Prior art keywords
terminals
integrated circuit
dual
terminal
chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56168612A
Other languages
Japanese (ja)
Inventor
Masaaki Kusano
草野 正昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56168612A priority Critical patent/JPS5870557A/en
Publication of JPS5870557A publication Critical patent/JPS5870557A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To perform checking of internal circuits without increasing a number of terminals by providing the checking terminal to the side at a right angle to a side where terminals are provided on the basis of dual inline. CONSTITUTION:The IC chips C1-C3 are connected with a conductor pattern 17 and are extended to the checking terminal 15 at the side at a right angle to the dual inline terminal 14 with a conductor pattern 16. The chips are connected to the substrate by the face down method. According to this structure, an IC can be checked without increasing a number of terminals 14, an effective terminals can be structured with the same external shape as the ceramic substrate providing the standard number of terminals, resulting in much economical advantage.

Description

【発明の詳細な説明】 本発明は集積回路IQツケージに関するものである。[Detailed description of the invention] The present invention relates to integrated circuit IQ packaging.

IC,L8I技術の微細化、高密度化にともない一つの
IC−4ツケージに集積される回路の密度は増々高くな
っている◎ IC/#ツケーゾとして杜、必要な人、出力用の端子及
び電源端子等を有すれば良いが、入出力間に構成された
各回路ブロックや単一回路素子の動作は外部端子から見
ることができない。この様な外部端子からその動作を見
れないという問題は集積密度の増加とともに大きくなっ
ている。これらは集積回路を製造する側にとって一層大
きな問題となる。特に複数個のチップで成るマルチチッ
プ形・ぐツケージでは1個のチップの不良のために他の
全てのチップ及び14ツケージを棄てるという不) 経済を避けるために、不良チップを特定出来ることが必
須となるが、従来のデュアルインライン形ノ9ツケージ
では、この問題を解決しようとすると内部回路用引出し
端子の増加のために著しく端子数が多い、寸法の大きな
パッケージとなってしまう。
With the miniaturization and high density of IC and L8I technology, the density of circuits integrated into one IC-4 package is increasing. Although it is sufficient to have terminals, etc., the operation of each circuit block or single circuit element configured between input and output cannot be seen from the external terminal. This problem of not being able to see the operation from external terminals is becoming more serious as the integration density increases. These become even more of a problem for manufacturers of integrated circuits. Particularly in multi-chip type cages consisting of multiple chips, it is essential to be able to identify defective chips in order to avoid the disadvantage of having to discard all other chips and 14 cages due to a defect in one chip. However, in the conventional dual in-line type 99 cage, if an attempt is made to solve this problem, the number of lead-out terminals for the internal circuit increases, resulting in a package with a significantly large number of terminals and a large size.

第1図はスイッチ81〜S5がA線・、B線上に構成さ
れた回路L1及びL2で成る電話交換機加入者回路の一
例で、1ム〜ICはその主線路端子、2はスイッチのコ
ントロール端子である。C1〜C3はそれぞれ別のチッ
プであることを示す。図示の例でれ主回路端子数14端
子、コントロール端子数10端子、他に電源及び接地用
端子20合計が端子が外部端子として必要である。TA
I、TBI及びTA2.TB2はスイッチ82,83.
84の特性をそれぞれ単独に測定する端子である。これ
らの端子を含めると合計(9)端子の外部端子が必要と
なる。
Figure 1 is an example of a telephone exchange subscriber circuit consisting of circuits L1 and L2 in which switches 81 to S5 are configured on lines A and B, where 1 to IC are the main line terminals, and 2 is the control terminal of the switch. It is. C1 to C3 indicate different chips. In the illustrated example, a total of 14 main circuit terminals, 10 control terminals, and 20 terminals for power supply and grounding are required as external terminals. T.A.
I, TBI and TA2. TB2 has switches 82, 83 .
These terminals are used to measure each of the 84 characteristics independently. Including these terminals, a total of (9) external terminals are required.

例えば四端子を標準端子数のデュアルインライン形ノ臂
ツケージとすれば不足の2端子のために新規なノ9ツケ
ージを必要とし不経済である。回路構成によってその都
度新規なノ々ツケージを必要とすることにもなる。
For example, if a dual in-line type arm cage with four terminals is used as the standard number of terminals, nine new cages would be required for the missing two terminals, which would be uneconomical. Depending on the circuit configuration, a new node cage may be required each time.

従って、本発明の目的は、従来のデュアルインライン形
ノ9ツケージの外部端子数を増すことなく外部端子から
はチェックすることができない内部回路や回路素子の特
性を試験するこメができる集積回路zfクツージを提供
することにある。
Therefore, an object of the present invention is to provide an integrated circuit zf that can test the characteristics of internal circuits and circuit elements that cannot be checked from external terminals without increasing the number of external terminals of a conventional dual in-line type cage. The aim is to provide Kutuji.

即ち、本発明は対向する二辺に外部端子を有するデュア
ルインライン形集積回路パッケーゾにおいて、当該外部
端子を有する辺と直角の他の二辺に、密封された集積回
路チップと導体Aターンとで接続されたチェック用電極
を形成したことを特徴とする集積回路パッケージに存す
る。
That is, the present invention provides a dual in-line integrated circuit package having external terminals on two opposing sides, and a sealed integrated circuit chip connected to the conductor A-turn on the other two sides perpendicular to the side having the external terminals. The present invention relates to an integrated circuit package characterized in that a check electrode is formed.

以下本発明を具体的実施例によって詳細に説明する。The present invention will be explained in detail below using specific examples.

を示し、第3図はその断面図である。同図において10
はセラミック基板、11はその配線面、12は集積回路
チップ、13は封止キャップ、14は外部端子である。
FIG. 3 is a sectional view thereof. In the same figure, 10
1 is a ceramic substrate, 11 is its wiring surface, 12 is an integrated circuit chip, 13 is a sealing cap, and 14 is an external terminal.

15はデュアルインライン形に端子14を設けた基板の
長辺と直角の辺に形成したチェック用電極であり、封止
された内部回路と導体/母ターン16で接続されている
Reference numeral 15 denotes a check electrode formed on a side perpendicular to the long side of the board on which the terminal 14 is provided in a dual in-line type, and is connected to the sealed internal circuit by a conductor/mother turn 16.

第4図は上記のチェック用電極への導体/母ターンの構
成例を示し、C1〜C3は第1図の回路ブロック図のC
1〜C3に対応する集積回路チップである。17はチツ
7’C1〜C2及びC2〜C3間の導体/母p−y、1
6は導体ノ母ターン17からデュアルインライン端子1
4の辺上直角の側辺上に設けたチェック電極15へ引き
出すための導体・譬ターンである。第4図では他の配線
は図示を省略しである。
FIG. 4 shows an example of the structure of the conductor/mother turn to the above-mentioned check electrode, and C1 to C3 are C in the circuit block diagram of FIG.
These are integrated circuit chips corresponding to numbers 1 to C3. 17 is a conductor/mother p-y between 7'C1-C2 and C2-C3, 1
6 is the dual in-line terminal 1 from the conductor mother turn 17
This is a conductor/transformer for leading out to the check electrode 15 provided on the side perpendicular to the side of 4. In FIG. 4, illustration of other wiring is omitted.

以上実施例ではチツゾ拡フェースダウンで配線基板に接
続される。
In the above embodiments, it is connected to the wiring board in a wide-face-down manner.

第5図、第6図は他の実施例を示す断面図及び平面図で
、チップがワイヤーゲ/ディングで接続される場合を示
す。同図で加はデュアルインライン形セラミック基板、
ρは集積回路チップ、るは封止キャップ、冴は端子であ
る0 5は第1の実施例と同様のチェック用電極、漢はチェッ
ク用電極と集積回路チップを接続する導体ノ臂ターy 
b 2B ハNンデイングワイヤーを示す。
FIGS. 5 and 6 are a cross-sectional view and a plan view showing another embodiment, in which the chips are connected by wire gating. In the same figure, the dual in-line ceramic substrate is shown.
ρ is the integrated circuit chip, Ru is the sealing cap, Sae is the terminal, 5 is the same check electrode as in the first embodiment, and Han is the conductor arm connecting the check electrode and the integrated circuit chip.
b 2B Shows handing wire.

図示の例では端子数スのデュアルイノライン形/9ツケ
ージでは6個のチェック用電極を設け、端子数がI端子
相当のデュアルイ/ラインノ譬ツケージが構成される。
In the example shown, six check electrodes are provided in a dual-inno-line type/9-type cage with a number of terminals, and a dual-in/in-line type cage with the number of terminals equivalent to the I terminal is constructed.

本発明で使用されるチェック用電極は表面に電気的接触
が容易かつ良好に形成される。−例としてタングステン
を主成分とする導体上にニッケル及び金がメッキされる
か、更にメッキ上にはんだが被着される。
Electrical contact can be easily and well formed on the surface of the check electrode used in the present invention. - For example, a tungsten-based conductor is plated with nickel and gold, or a solder is applied on top of the plating.

以上説明した様に、本発明によればデュアルインライン
形セラミツクツぐツケージにお−1てデュアルインライ
ン状に端子が構成される辺と直角の別の辺上にチェック
用電極を構成したので端子数を増加させることなしに、
集積回路の内部チェックカ可能なデュアルインライン・
やツケージが得られ、標準的な端子数のセラミック基板
と同じ外形寸法で有効な端子数を多く構成できるので経
済的にも効果が大きい。特にマルチチップ形集積回路に
おいてチェック用電極によって外部から電気的にチップ
を特定できるので有効である。
As explained above, according to the present invention, in the dual-in-line type ceramic shoe cage, the check electrode is configured on another side perpendicular to the side on which the terminals are arranged in a dual-in-line manner, so that the number of terminals can be reduced. without increasing
Dual in-line capable of internal checking of integrated circuits
It is also economically advantageous because a large number of effective terminals can be constructed with the same external dimensions as a ceramic substrate with a standard number of terminals. This is particularly effective in multi-chip integrated circuits because the checking electrode allows the chip to be electrically identified from the outside.

尚、図は一例であって、第3図、第5図に示す気密封止
用の段差はない構造であってもよい。
Note that the figure is an example, and a structure without the step for airtight sealing shown in FIGS. 3 and 5 may be used.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の対象となる回路構成の一例を示す回路
構成図、第2図は本発明の□実施例を示す平面図、第3
図は第2図に於けるX−X線に沿う断面図、第4図は第
2図の配線面を示す平面図、第5図は本発明の他の実施
例を示す断面図、第6図は第5図の配線図を示す平面図
である。 14・・・外部端子、15・・・チェック用電極、16
・・・導体/臂ターン、b・・・チェック用電[26・
・・導体/臂ター/G 代理人 弁理士 秋 本 正 実 第1図 TAI     T団 第2図 第3因 第4図 第5図 第6因 2626゜
FIG. 1 is a circuit configuration diagram showing an example of a circuit configuration to which the present invention is applied, FIG. 2 is a plan view showing an embodiment of the present invention, and FIG.
The figures are a sectional view taken along the line X-X in FIG. 2, FIG. 4 is a plan view showing the wiring surface of FIG. 2, FIG. 5 is a sectional view showing another embodiment of the present invention, and FIG. The figure is a plan view showing the wiring diagram of FIG. 5. 14... External terminal, 15... Check electrode, 16
...Conductor/arm turn, b...Check voltage [26.
...Conductor/Archive/G Agent Masami Akimoto Figure 1 TAI T group Figure 2 Cause 3 Figure 5 Figure 6 Cause 2626゜

Claims (1)

【特許請求の範囲】[Claims] 対向する二辺に外1部端子を有するデュアルインライン
形集積回路/fツケーゾにおいて、当該外部端子を有す
る辺と直角の他の二辺に1密封された集積回路チップと
導体/母ターンとで接続されたチェック用電極を形成し
たことを特徴とする集積回路ノ臂ツケージ。
In a dual in-line integrated circuit with external terminals on two opposing sides, the conductor/mother turn is connected to the sealed integrated circuit chip on the other two sides perpendicular to the side with the external terminals. An integrated circuit arm cage, characterized in that it has a check electrode formed thereon.
JP56168612A 1981-10-23 1981-10-23 Integrated circuit package Pending JPS5870557A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56168612A JPS5870557A (en) 1981-10-23 1981-10-23 Integrated circuit package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56168612A JPS5870557A (en) 1981-10-23 1981-10-23 Integrated circuit package

Publications (1)

Publication Number Publication Date
JPS5870557A true JPS5870557A (en) 1983-04-27

Family

ID=15871279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56168612A Pending JPS5870557A (en) 1981-10-23 1981-10-23 Integrated circuit package

Country Status (1)

Country Link
JP (1) JPS5870557A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0547398U (en) * 1991-11-29 1993-06-22 株式会社ミクニ Vaporizer jet needle support device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0547398U (en) * 1991-11-29 1993-06-22 株式会社ミクニ Vaporizer jet needle support device

Similar Documents

Publication Publication Date Title
JPS61101067A (en) Memory module
JP2568748B2 (en) Semiconductor device
KR0135734B1 (en) Semiconductor device
JP3138539B2 (en) Semiconductor device and COB substrate
US4930000A (en) Terminal assembly for an integrated semiconductor circuit
JPS5870557A (en) Integrated circuit package
CN215933584U (en) High-power integrated circuit chip packaging device and lead frame
JPH04196253A (en) Package for semiconductor device
JPH06291230A (en) Manufacture of composite semiconductor device
KR960002496B1 (en) Semiconductor package
JPH08250620A (en) Semiconductor device
TW201944568A (en) A universal transfer layer for semiconductor packaging structure
JPH0618246B2 (en) Semiconductor device
JPS5980957A (en) Semiconductor device
JPS61128550A (en) Semiconductor device
KR100206975B1 (en) Semiconductor package
KR0125869Y1 (en) Structure of package memory module
JP3182943B2 (en) Hybrid IC
JPH04354143A (en) Thick film multilayer circuit board
JPH0661297A (en) Semiconductor device
JPH0936158A (en) Structure of package-type semiconductor device
JPH04148557A (en) Lead frame for semiconductor product
JPS6341036A (en) Semiconductor device
JPH03265147A (en) Semiconductor device
JPH01108751A (en) Integrated circuit device