JPS5868218A - Magneto-resistance effect element - Google Patents
Magneto-resistance effect elementInfo
- Publication number
- JPS5868218A JPS5868218A JP56164181A JP16418181A JPS5868218A JP S5868218 A JPS5868218 A JP S5868218A JP 56164181 A JP56164181 A JP 56164181A JP 16418181 A JP16418181 A JP 16418181A JP S5868218 A JPS5868218 A JP S5868218A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetoresistive
- current
- detection
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims abstract description 26
- 230000005291 magnetic effect Effects 0.000 claims abstract description 45
- 239000010409 thin film Substances 0.000 claims abstract description 38
- 238000001514 detection method Methods 0.000 claims abstract description 25
- 238000007493 shaping process Methods 0.000 claims abstract description 8
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract 4
- 239000004065 semiconductor Substances 0.000 claims abstract 4
- 239000002184 metal Substances 0.000 claims 3
- 239000010408 film Substances 0.000 description 22
- 238000005259 measurement Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000017531 blood circulation Effects 0.000 description 1
- 238000002316 cosmetic surgery Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000855 fermentation Methods 0.000 description 1
- 230000004151 fermentation Effects 0.000 description 1
- 210000003754 fetus Anatomy 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000004886 head movement Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/54—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head into or out of its operative position or across tracks
- G11B5/55—Track change, selection or acquisition by displacement of the head
- G11B5/5521—Track change, selection or acquisition by displacement of the head across disk tracks
- G11B5/5526—Control therefor; circuits, track configurations or relative disposition of servo-information transducers and servo-information tracks for control thereof
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/40—Protective measures on heads, e.g. against excessive temperature
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Recording Or Reproducing By Magnetic Means (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、磁気ディスク装置や磁気テープ装置あるいは
磁気ドラム装置等磁気メモリ装置に用いられる磁気抵抗
効果を利用して信号検出を行なう磁気抵抗効果素子に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetoresistive element that detects a signal by utilizing the magnetoresistive effect and is used in a magnetic memory device such as a magnetic disk device, magnetic tape device, or magnetic drum device.
磁気抵抗効果素子は信号検出感度が大きいことから、計
算機の各種磁気記録、音声処理および画像処理に用いる
各種磁気記録に採用され始めている。Because magnetoresistive elements have high signal detection sensitivity, they are beginning to be employed in various magnetic recording systems used in computers, audio processing, and image processing.
ｉｔｔ’ｓ−横用磁気ディスクにおける磁気抵抗効果素
子に第１図に示す工うに、磁気ヘッドアクセス回路１、
アクチュエータ２、＃Ｌ＃、足電流電源３、磁気抵抗効
果検出用薄膜部４、検出信号増幅器５お工び波形整形回
路６からなり、直流定電流回路電源３からの定電流を磁
気抵抗効果検出用薄膜部４に印加し、該薄膜部４からの
信号を信号増幅６５により増幅し、該増幅信号を波形整
形回路６により波形整形を行なう。また、磁気ヘッドア
クセス回路１、アクチュエータ２は磁気ヘッドのトラッ
ク探索のためのものである。なお、磁気テープ装置およ
び磁気ドラム装置の場合には磁気ヘッドに固定されてい
るため、第１図の磁気ヘッドアクセス回路おＬびアクチ
ュエータの代りにそｎぞｎａ気テープ移動回路および磁
気テープ移動機構を用い、磁気抵抗効果検出用薄膜部を
移動させる代りに磁気テープを移動させる。Itt's-A magnetoresistive element in a horizontal magnetic disk has a magnetic head access circuit 1 as shown in FIG.
Consisting of an actuator 2, #L#, a foot current power source 3, a thin film section 4 for magnetoresistive effect detection, a detection signal amplifier 5 and a waveform shaping circuit 6, the constant current from the DC constant current circuit power source 3 is detected by magnetoresistive effect. The signal from the thin film part 4 is amplified by the signal amplification 65, and the amplified signal is subjected to waveform shaping by the waveform shaping circuit 6. Further, a magnetic head access circuit 1 and an actuator 2 are used for searching tracks of the magnetic head. In the case of a magnetic tape device and a magnetic drum device, since the magnetic head is fixed to the magnetic head, a tape moving circuit and a magnetic tape moving mechanism are used instead of the magnetic head access circuit and actuator shown in FIG. is used to move the magnetic tape instead of moving the thin film section for detecting the magnetoresistive effect.
磁気抵抗効果素子にはバーバーポール型とバイアス型が
あるが、本発明に双方に有効なものである。There are two types of magnetoresistive elements: a barber pole type and a bias type, and both types are effective for the present invention.
第２図にバーバーポール型磁気抵抗素子の磁気抵抗効果
検出用薄膜部の見取図を示す。パーツクーボール型磁気
抵抗素子の磁気抵抗効果検出用薄膜部に非磁性基＆７上
に設けた磁気シールド膜８の上にさらに絶縁膜９を設け
、該絶縁膜９上の一部に磁気抵抗効果の大きな長方形状
薄膜１０を設ける。さらに、該長方形状薄膜１００両端
に電極１１、中心部に該薄膜１１の長手方向と略４５゜
の角度をなす工うに１ケまたは２ケ以上の互いに平行な
細長い良４１１Ｅ体層１２を設ける。ここに述べた磁気
抵抗検出用薄膜部上にさらに絶縁膜および磁気シールド
膜を設けることも有効である。FIG. 2 shows a sketch of the thin film portion for detecting the magnetoresistive effect of the barber pole type magnetoresistive element. An insulating film 9 is further provided on the magnetic shielding film 8 provided on the non-magnetic base &7 in the thin film portion for detecting the magnetoresistive effect of the part-Kubole type magnetoresistive element, and a part of the insulating film 9 has a magnetoresistive effect. A large rectangular thin film 10 is provided. Further, electrodes 11 are provided at both ends of the rectangular thin film 100, and one or more elongated 411E body layers 12 parallel to each other are provided at the center thereof at an angle of approximately 45° with the longitudinal direction of the thin film 11. It is also effective to further provide an insulating film and a magnetic shielding film on the magnetoresistive thin film portion described herein.
第３図にバイアス型磁気抵抗素子の磁気抵抗効果検出用
薄膜部の側断面図を示す。バイアス型磁気抵抗素子の場
ｆｌｉには、基板７上に設けた下部シールド膜８上に絶
縁膜９、該絶縁膜９上の一部に永久磁石膜１３を設け、
該永久磁石膜１３上に絶縁膜１５を設ける。さらに該絶
縁膜１５上の一部に磁気抵抗効果の大きな薄膜１０金設
ける。、また該薄膜の一部に第１図の場合のＬうに電極
１１を設ける。さらに、こｎら薄膜部上に絶縁膜１６お
工び永久磁石膜１４を設け、該永久磁石膜上に絶縁７１
７’ｉ介して下部シールド膜１ｓｔ−設ける。FIG. 3 shows a side sectional view of the thin film portion for detecting the magnetoresistive effect of the bias type magnetoresistive element. In the case of a bias type magnetoresistive element, an insulating film 9 is provided on a lower shield film 8 provided on a substrate 7, a permanent magnet film 13 is provided on a part of the insulating film 9,
An insulating film 15 is provided on the permanent magnet film 13. Further, a thin film of 10 gold having a large magnetoresistive effect is provided on a part of the insulating film 15. Further, an electrode 11 is provided on a part of the thin film in the same way as in the case of FIG. Furthermore, an insulating film 16 and a permanent magnet film 14 are provided on these thin film parts, and an insulating film 71 is provided on the permanent magnet film.
A lower shield film 1st is provided through 7'i.
素子およびバイアス型磁気抵抗効果素子ともに、磁気抵
抗効果の大＠な薄膜１０に、電極１１↓り検昶電流を印
加する。該薄膜の厚みは１００〜数１００ ＯＡ、高さ
ａは数μｍ〜数１０μｍであり該薄膜としてパーマロイ
膜を用いる際の印加ｔｆＮ。In both the element and the bias type magnetoresistive element, a test current is applied to the electrode 11↓ to the thin film 10 having a large magnetoresistive effect. The thickness of the thin film is 100 to several 100 OA, the height a is several μm to several tens of μm, and the applied tfN is when a permalloy film is used as the thin film.
を通常用いらｎる［ｉｌ〜数１０ｍＡとすると、該パー
マ０イ膜の電流密度ｆｌ １０’ 〜１０’ Ａ ７ｃ
ｍ”となり、長時間の寿命を保てないという問題が生じ
る。When the current density of the permanent film is normally used, the current density fl 10' ~ 10' A 7c
m'', which causes the problem that a long service life cannot be maintained.
実際に、核パーマロイ膜の厚さ’１４００Ａ、高さａを
５μｍ、印加電流をｌ ＯｍＡとした場合−通電開始半
年後の出力が通電開始直流の出力にくらべて８０％以上
の磁気抵抗効果素子の数に検査数２００個中６ｏ個でめ
った。In fact, when the thickness of the nuclear permalloy film is 1400 A, the height a is 5 μm, and the applied current is 1 OmA, the output after 6 months from the start of energization is 80% or more compared to the DC output from the start of energization. Out of 200 tests, 6o were unsuccessful.
本発明の目的に、このような磁気抵抗効果素子の問題点
を解決し、長寿命の磁気抵抗効果素子を開発することに
ある。It is an object of the present invention to solve these problems of magnetoresistive elements and to develop long-life magnetoresistive elements.
素子に流す電流が大きく長寿命が保てｌＶ′ｈ原因はエ
レクトロマイグレーショノにより原子の移動が一万方向
のみに生じ、膜に孔がめいたり断線したりすることによ
るものである。こｎｔ防ぐには電流の向きを一万方向の
みに限定せず時々向＠を変えることが非酵に有効である
。検知１！流として交ｆｉを用いる場合には、信号周波
数よりも一桁以を大きな周波数金用いる必要がろる。計
算機ファイルメモリに用いらｎる磁気記録装置における
信号周波数は数Ｍ）ＩＺであり、磁気抵抗効果素子に流
す′ＩＬ流の周波数に１００ＭＨ２以上としなければな
らない。このため、第１図における電源回路および整形
回路が大変複雑になり、磁気抵抗効果素子の価格が高く
なる。The reason why the current flowing through the device is large and the device has a long life, lV'h, is due to the movement of atoms in only 10,000 directions due to electromigration, which causes holes in the film and breaks. To prevent this, it is effective for non-fermentation to not limit the direction of the current to only 10,000 directions, but to occasionally change the direction. Detection 1! When using AC fi as the current, it is necessary to use a frequency that is at least one order of magnitude higher than the signal frequency. The signal frequency in a magnetic recording device used in a computer file memory is several M)IZ, and the frequency of the IL current flowing through the magnetoresistive element must be 100 MH2 or more. Therefore, the power supply circuit and the shaping circuit shown in FIG. 1 become very complicated, and the price of the magnetoresistive element becomes high.
不発明の目的は上記した檀々の欠点を解決し、長寿命で
廉価な磁気抵抗効果素子全提供することにある。The object of the invention is to solve the above-mentioned drawbacks and to provide a long-life and inexpensive magnetoresistive element.
磁気抵抗効果検出用薄膜部に流す電流を定期的ガえは一
日毎に反転させることは素子の長寿命化に有効であるが
、さらに有効であるのに、磁気抵抗効果検出用ｉ１膜部
において記録媒体からの信号を検出する必要のない期間
、例えばディスク装置の場合にはトラック検出のための
ヘッド移動の期間、磁気テープ装置の場合には該当信号
部近傍へのテープ移動の期間、が生じる毎に該期間中に
磁気抵抗効果検出用薄膜部に流れる電流の向＠全反転さ
せる方式である。Periodically reversing the current flowing through the thin film section for magnetoresistive effect detection every day is effective in extending the life of the element. There is a period during which it is not necessary to detect signals from the recording medium, for example, in the case of a disk device, a period of head movement for track detection, and in the case of a magnetic tape device, a period of tape movement to the vicinity of the corresponding signal section. This is a method in which the direction of the current flowing through the magnetoresistive effect detection thin film portion is completely reversed during each period.
以下、本発明を実施列により詳しく説明する。Hereinafter, the present invention will be explained in detail with reference to examples.
実施例１
該当トラックへのヘッド移動が生じる際には、周知のＬ
うに第１図の磁気ヘッドアクセス回路１から移動のため
の信号が発生し、アクチュエータ２を通じて磁気抵抗効
果検出用薄膜部４の移動が生じる。゛本実施例において
ａ１該移動のための信号は第４図に示すように同時に直
流定′亀流電源３および波形整形回ｗｔ６に送られ、周
知の手法にＬシそ扛それ信号検出用＠流電流の向きの反
転および波形の反転を行なう。Example 1 When the head moves to the corresponding track, the well-known L
A signal for movement is generated from the magnetic head access circuit 1 shown in FIG. In this embodiment, the signal for the movement of a1 is simultaneously sent to the DC constant current power supply 3 and the waveform shaping circuit wt6 as shown in FIG. Reverses the direction of the current and the waveform.
不災施列においては磁気抵抗効果検出用薄膜部４のなか
の磁気抵抗効果検出部は第２図のバーバーポール型素子
を用いた。該バーバーポール型素子中の長方形状薄膜は
Ｎ’ａｓＦｅｔｔ合金ｔターケットとしてスパッタ法に
より作製した。該薄膜は、高さａ ｇ（５ｐ ” ＊厚
さ金４０ＯＡ、幅ｂ’ｉｉ３０７４ｍになるＬうにホト
エツチング法にエリ加工した。In the emergency arrangement, the barber pole type element shown in FIG. 2 was used as the magnetoresistive effect detection section in the magnetoresistive effect detection thin film section 4. The rectangular thin film in the barber pole type element was prepared by sputtering using a N'asFett alloy t target. The thin film was etched by photo-etching to a height ag(5p''*thickness 40OA, width b'ii 3074m).
また、電極部１１．１２は膜厚１μｍのＡ４薄膜よりホ
トエツチング法に工り作製した。Further, the electrode portions 11 and 12 were fabricated using a photoetching method from an A4 thin film having a thickness of 1 μm.
同一ロットから作製した上述の形状の２０個の磁気ヘッ
ドに２０ｍＡの検出用電流を通電し、このうち１０個の
磁気ヘッドは該検出用電流の向きを一定とし、他の１０
個の電流の向きは、該磁気ヘッドの移動が生じるごとに
反転する工うにし、磁気ディスク装置を用いて２分毎に
磁気ヘッドの移動音生じる工うにした。測定中の磁気ヘ
ッドの温度を２００Ｃになるように設定したところ、前
１０個の検出′ａ流の向きが一定でろる磁気ヘッドは通
電時間１００時間以内にすべてのヘッドに断線が生じた
が、後者の１０個の磁気ヘッドに通電時間１００時間以
内でにｆｉＨｉｌＵ全く生じなかった。A detection current of 20 mA was applied to 20 magnetic heads having the above-mentioned shape manufactured from the same lot, and 10 of these magnetic heads had the direction of the detection current constant, and the other 10 magnetic heads had the same direction.
The direction of the current was reversed each time the magnetic head moved, and a magnetic disk drive was used to generate the sound of the magnetic head moving every two minutes. When the temperature of the magnetic head during measurement was set to 200C, all of the previous 10 magnetic heads in which the direction of the detected 'a flow was not constant occurred within 100 hours of energization, but wire breakage occurred in all of the heads. No fiHilU occurred in the latter 10 magnetic heads within 100 hours of current application.
実施例２
本夾施列においては磁気抵抗効果検出用薄膜部としては
第３図に示したバイアス型検出部を用いた。磁気抵抗効
果の大＠ｌ薄膜としては１夾施的１と同じ＜ＮＩａｓＦ
ｅ＋ｙ合金をターゲットとしてスパッタ法により作製し
た。該薄膜の形状に実施例ｌと同じである。永久磁石膜
としてＵ、ｅ”ｔ”５％含有した厚さ０．３μｍのγ−
Ｆｅｔｕｓ膜を用いた。Example 2 In this interpolation, the bias type detection section shown in FIG. 3 was used as the thin film section for detecting the magnetoresistive effect. Large magnetoresistive effect @ l As a thin film, 1 concentration is the same as 1 < NIasF
It was produced by sputtering using e+y alloy as a target. The shape of the thin film is the same as in Example 1. γ- with a thickness of 0.3 μm containing 5% U and e”t” as a permanent magnet film
A Fetus membrane was used.
同一ロットから作製した上述の形状の２０個の磁気ヘッ
ドに２０ｍＡの検出用電流全通電し、実施例１と同様に
磁気ディスク装置を用いて実験を行なった。これら磁気
ヘッドのうち１０個の磁気ヘッドの検出電流の向＠全−
足とした。測定中の磁気ヘッドの温度を２００″ｃＫな
る工うに設定したところ該１０個の磁気ヘッドはすべて
通１１時間１００時間以内で断［−生じた。残りの１０
個の磁気ヘッドに関してに、該磁気ヘッドの移動音生じ
る毎に検出電流の向キラ反転させたところ、測定中の温
度２００Ｃの場合には通電時間１００１＃間以内ではｌ
１Ｆｒ＠は全く生じなかった。An experiment was conducted using a magnetic disk device in the same manner as in Example 1, by applying a full detection current of 20 mA to 20 magnetic heads having the above-mentioned shape and manufactured from the same lot. The direction of the detection current of 10 magnetic heads among these magnetic heads @all-
I used it as a foot. When the temperature of the magnetic heads during measurement was set to 200" cK, all 10 magnetic heads were disconnected within 11 hours and 100 hours. The remaining 10
When the direction of the detected current was reversed every time the moving sound of the magnetic head was generated, it was found that when the temperature during measurement was 200C, the current flow time was 1001# or less.
1Fr@ did not occur at all.
以上述べてきたごとく、本発明に、磁気抵抗効果素子の
長寿命化に顕著な効果を示す。As described above, the present invention has a remarkable effect on extending the life of the magnetoresistive element.
第１図は従来の磁気抵抗効果素子のブロックダイヤグラ
ム、第２図はバーバーポール型磁気抵抗効果検出用薄膜
部の斜視図、第３図はバイアス型磁気抵抗効果検出用薄
膜の１ｌｉＦｒ面図、第４図に本発明による磁気抵抗効
果素子のブロックダイヤグラムである。
ｌ・・・磁気ヘッドアクセス回路、２・・・アクチュエ
ータ、３・・・血流定電流電源、４・・・磁気抵抗効果
検出用薄膜部、５・・・検出信号増幅器、６・・・波形
整形回￥Ｊ １ 図
慕３図Fig. 1 is a block diagram of a conventional magnetoresistive element, Fig. 2 is a perspective view of a thin film section for barber-pole magnetoresistive detection, Fig. 3 is a 1liFr side view of a thin film for bias type magnetoresistive detection, and FIG. 4 is a block diagram of the magnetoresistive element according to the present invention. l...Magnetic head access circuit, 2...Actuator, 3...Blood flow constant current power supply, 4...Thin film section for magnetoresistive effect detection, 5...Detection signal amplifier, 6...Waveform Plastic surgery ￥J 1 Figure 3
Claims (1)
いに半導体薄膜に印加する検知電流の向きを定期的に反
転させることを特徴とする磁気抵抗効果素子。 ２ 磁気ディスクから（θ信号を検出するための磁気抵
抗効果型磁気ヘッドにおいて、磁気抵抗効果を検知する
ために強磁性金属薄膜あるいは半導体薄膜に印加する電
流の向１！ Ｉｆ 、ＭＳ当トラック検出のための磁気
ヘッドの移動が生じる毎に反転させる゛こと１に％徴と
する磁気抵抗効果素子。 ３、 計算機用磁気テープからの信号全検出するための
磁気抵抗効果型磁気ヘッドにおいて、磁気抵抗効果を検
知するために強磁性金属薄膜あるいは半導体薄膜に印加
する電流の向ｔ！！を、該当信号部近傍への磁気テープ
の高速移動が生じる毎に反転させることｔ−％徴とする
磁気抵抗効果素子。 ４、磁気抵抗効果検出信号を増幅するための差動増幅器
の手前にリレーを配置し、印加電流の向きの反転に対応
して増幅後の検出電流の向＠を逆転させることｉ４徴と
する特許請求の範囲第１項。 第２項もしくに第３項記載の磁気抵抗効果素子。 ５、磁気抵抗効果検出信号を増幅後、整形するための整
形回路において電流方向逆転用ゲートヲ配置することを
特徴とする特許請求の範囲第１項。 第２項もしくＵｉａ項記載の磁気抵抗効果素子。[Scope of Claims] 1. A magnetoresistive element characterized in that the direction of a detection current applied to a ferromagnetic metal thin film or semiconductor thin film for detecting the magnetoresistive effect is periodically reversed. 2 From the magnetic disk (in a magnetoresistive magnetic head for detecting the θ signal, the direction of the current applied to the ferromagnetic metal thin film or semiconductor thin film in order to detect the magnetoresistive effect 1!If, MS for detecting the track) 1. A magnetoresistive element that is reversed every time the magnetic head moves. 3. In a magnetoresistive head for detecting all signals from a computer magnetic tape, the magnetoresistive element Magnetoresistive effect in which the direction t!! of the current applied to a ferromagnetic metal thin film or semiconductor thin film is reversed every time the magnetic tape moves at high speed to the vicinity of the corresponding signal section to detect t-%. 4. A relay is placed before the differential amplifier for amplifying the magnetoresistive detection signal, and the direction of the amplified detection current is reversed in response to the reversal of the direction of the applied current. Claim 1. The magnetoresistive element according to claim 2 or 3. 5. A current direction reversal gate is arranged in a shaping circuit for shaping the magnetoresistive effect detection signal after amplifying it. Claim 1, characterized in that: A magnetoresistive element according to Claim 2 or Uia.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56164181A JPS5868218A (en) | 1981-10-16 | 1981-10-16 | Magneto-resistance effect element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56164181A JPS5868218A (en) | 1981-10-16 | 1981-10-16 | Magneto-resistance effect element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5868218A true JPS5868218A (en) | 1983-04-23 |
Family
ID=15788245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56164181A Pending JPS5868218A (en) | 1981-10-16 | 1981-10-16 | Magneto-resistance effect element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5868218A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0348027A2 (en) * | 1988-06-21 | 1989-12-27 | Hewlett-Packard Company | Magneto-resistive sensor with opposing currents for reading perpendicularly recorded media |
-
1981
- 1981-10-16 JP JP56164181A patent/JPS5868218A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0348027A2 (en) * | 1988-06-21 | 1989-12-27 | Hewlett-Packard Company | Magneto-resistive sensor with opposing currents for reading perpendicularly recorded media |
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