JPH01315016A - Magneto-resistance effect type head - Google Patents

Magneto-resistance effect type head

Info

Publication number
JPH01315016A
JPH01315016A JP14716388A JP14716388A JPH01315016A JP H01315016 A JPH01315016 A JP H01315016A JP 14716388 A JP14716388 A JP 14716388A JP 14716388 A JP14716388 A JP 14716388A JP H01315016 A JPH01315016 A JP H01315016A
Authority
JP
Japan
Prior art keywords
terminals
sensing part
conductor layer
magnetic
sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14716388A
Other languages
Japanese (ja)
Inventor
Kazumasa Hosono
和真 細野
Akira Kakehi
筧 朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14716388A priority Critical patent/JPH01315016A/en
Publication of JPH01315016A publication Critical patent/JPH01315016A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To suppress the generation of magnetic domains in a sensing part having two terminals consisting of thin films of a soft magnetic material and to microminiaturize the sensing part as well as to improve recording density by providing a conductor layer inserted between the two terminals in the form of intersecting orthogonally with the sensing part. CONSTITUTION:The terminals 12-1, 12-1 consisting of the thin films of the soft magnetic material are led out of both ends of the sensing part 10 the resistance value of which changes with magnetism. The conductor layer 16 intersects orthogonally with the plane of the sensing part 10, has a step in the middle part and is inserted between the terminals 12. A magnetic field is impressed via the terminals 12 in the direction EA of the axis of easy magnetization of the sensing part 10 when current is supplied to the conductor layer 16 from a constant current source. The generation of the magnetic domains is suppressed and Barkhausen noises are decreased when the magnetic field is impressed in the axis EA direction from the outside. The high-quality reproduction is executed with low noises in this way even if the track width of the sensing part is shortened in order to increase the recording density of the magnetic disk.

Description

【発明の詳細な説明】 [概要] 磁気記録媒体に記録された情報を磁気抵抗効果の利用に
より再生する磁気抵抗効果型ヘッド(MRヘッド)に関
し、 バルクハウゼン雑音を有効に抑制することを目的とし、 磁気に応じて抵抗値が変化する感知部の両側から軟磁性
体薄膜から成る端子が各々引き出された薄膜の磁気抵抗
効果素子と、感知部を含む平面に対し直交する姿勢で両
端子間を感知部近傍において中間部が挿通される導体層
と、を有することにより構成されろ。
[Detailed Description of the Invention] [Summary] This invention aims to effectively suppress Barkhausen noise in a magnetoresistive head (MR head) that reproduces information recorded on a magnetic recording medium by utilizing the magnetoresistive effect. , a thin film magnetoresistive element in which terminals made of a soft magnetic thin film are drawn out from both sides of a sensing part whose resistance value changes according to magnetism, and a thin film magnetoresistive element in which terminals made of a thin film of soft magnetic material are drawn out from both sides of a sensing part whose resistance value changes according to magnetism, and a connection between the two terminals in an orientation perpendicular to a plane containing the sensing part. and a conductor layer through which the intermediate portion is inserted near the sensing portion.

[産業上の利用分野コ 本発明は、磁気記録媒体に記録された情報を磁気抵抗効
果の利用により再生する磁気抵抗効果型ヘッドに間する
ものである。
[Industrial Field of Application] The present invention is applied to a magnetoresistive head that reproduces information recorded on a magnetic recording medium by utilizing the magnetoresistive effect.

この種のヘッドでは磁気ディスクや磁気テープの発生す
る磁束の変化が磁気抵抗効果により抵抗値の変化に置き
かえられるので、ヘッドに流れる電流から電圧の変化と
して磁気記録の情報を再生できる。
In this type of head, changes in the magnetic flux generated by the magnetic disk or magnetic tape are replaced by changes in resistance value due to the magnetoresistive effect, so magnetically recorded information can be reproduced as changes in voltage from the current flowing through the head.

[従来の技術] 第51!!及び第6Ili!Iでは従来における磁気抵
抗効果型ヘッドの構成が説明されており、ここでは第5
図の磁気ディスク50に記録された情報が再生されてい
る。
[Prior art] No. 51! ! and the 6th Ili! Section I describes the configuration of a conventional magnetoresistive head, and here
Information recorded on the magnetic disk 50 shown in the figure is being reproduced.

その再生は薄膜化された磁気抵抗効果素子14の感知部
10により行なわれており、第5図のように感知部10
の先端は磁気ディスク50と対向したヘッド再生面52
に対して面一とされている。
The reproduction is performed by the sensing section 10 of the thin-film magnetoresistive element 14, and as shown in FIG.
The tip of the head is a head reproducing surface 52 facing the magnetic disk 50.
It is said that they are on par with each other.

そして感知部lOの両側から図の上方へ端子12−1.
12−2が各々引き出されており、端子12−1.12
−2の上端には通電用の導体層54−1.54−2が各
々接続されている。
Then terminals 12-1.
12-2 are each pulled out, and the terminals 12-1.12
-2 are connected to conductor layers 54-1 and 54-2 for energization, respectively.

また第5図において、磁気抵抗効果素子14の前方には
シールド層56が、その後方には磁性フェライト基板5
8が各々配置されており、それらの配置は第6図から理
解される。
Further, in FIG. 5, a shield layer 56 is provided in front of the magnetoresistive element 14, and a magnetic ferrite substrate 5 is provided behind it.
8 are arranged respectively, and their arrangement can be understood from FIG.

なお、磁気抵抗効果素子14及びシールド層56は第6
図のように絶縁層60内で形成されてい第5図において
、導体層54−1.54−2及び端子12−1.12−
2を介して感知部10に検出電流Iが外部から供給され
ており、感知部10てはヘッド再生面52に沿って検出
電流■が流れる。
Note that the magnetoresistive element 14 and the shield layer 56 are
In FIG. 5, conductive layer 54-1.54-2 and terminal 12-1.12-
A detection current I is supplied from the outside to the sensing section 10 via the sensing section 2, and a detection current (2) flows along the head reproducing surface 52 in the sensing section 10.

その検出電流■と磁化容易軸EAが平行となる一軸の磁
気異方性を感知部10が有しており、磁気ディスク50
の磁気が磁化容易軸EAと直交するときに最も高い効率
で再生が行なわれる。
The sensing unit 10 has uniaxial magnetic anisotropy in which the detection current ■ is parallel to the easy magnetization axis EA, and the magnetic disk 50
Reproduction is performed with the highest efficiency when the magnetism is perpendicular to the axis of easy magnetization EA.

[発明が解決しようとする課題] ここで、第5図で示される感知M10の長さしは磁気デ
ィスク50のトラック幅が与えられると、これに対応し
て決定される。
[Problems to be Solved by the Invention] Here, given the track width of the magnetic disk 50, the length of the sensing M10 shown in FIG. 5 is determined in accordance with this.

そのトラック幅は記録密度を高めるために狭小化が要請
されており、10μm以下とすることが要求される。
The track width is required to be narrowed to increase the recording density, and is required to be 10 μm or less.

その場合、感知部長さしの減少により磁区が感知部10
で発生しやすくなり、バルクハウゼン雑音が生じ易くな
る。
In that case, due to the decrease in the length of the sensing part, the magnetic domain is
Barkhausen noise is more likely to occur.

このバルクハウゼン雑音のレベルはトラック幅(すなわ
ち長さし)の狭小化とともに高まり、したがって磁気デ
ィスク50の記録密度をさらに高めるためには、これを
抑制することが重要な課題となる。
The level of this Barkhausen noise increases as the track width (that is, length) becomes narrower, and therefore, in order to further increase the recording density of the magnetic disk 50, suppressing this noise becomes an important issue.

本発明は上記従来の課題に鑑みてなされたものであり、
その目的は、バルクハウゼン雑音を有効に抑制すること
が可能となる磁気抵抗効果型ヘッドを提供することにあ
る。
The present invention has been made in view of the above-mentioned conventional problems,
The purpose is to provide a magnetoresistive head that can effectively suppress Barkhausen noise.

[課題を解決するための手段] 上記目的を達成するために、本発明は、第1図のように
導体層16が設けられたことを特徴としている。
[Means for Solving the Problems] In order to achieve the above object, the present invention is characterized in that a conductor layer 16 is provided as shown in FIG.

同図の感知部10では磁気に応じて抵抗値が変化してお
り、その両側から軟磁性体薄膜から成る端子12−1.
12−2が各々引き出されている。
In the sensing section 10 shown in the figure, the resistance value changes depending on the magnetism, and from both sides terminals 12-1.
12-2 are each pulled out.

そして上記導体層16の中間部は、感知部10を含む平
面に対し直交する姿勢で、両端子12−1.12−2間
を感知部近傍において挿通されている。
The intermediate portion of the conductor layer 16 is inserted between the terminals 12-1 and 12-2 in the vicinity of the sensing portion in a position perpendicular to the plane including the sensing portion 10.

[作用コ 第2図のように電流iが導体71116へ供給されると
、感知部10において電流■の通流方向(すなわち磁化
容易軸EAO軸方向)に磁界Hが加えられる。
[Operation] When the current i is supplied to the conductor 71116 as shown in FIG. 2, a magnetic field H is applied in the sensing section 10 in the direction of the current (i.e., the easy magnetization axis EAO axis direction).

これにより感知部10における磁区の発生が抑制され、
したがってバルクハウゼン雑音が減ぜられる。
This suppresses the generation of magnetic domains in the sensing section 10,
Barkhausen noise is therefore reduced.

[実施例] 以下、図面に基づいて本発明に係るヘッドの好適な実施
例を説明する。
[Embodiments] Hereinafter, preferred embodiments of the head according to the present invention will be described based on the drawings.

第1図及び第2図では第1実施例が、第3図では第2実
施例が、そして第4図では第3実施例が各々説明されて
おり、ここでは前述した第5図及び第6図と同一部材の
図示及び説明は省略する。
The first embodiment is explained in FIGS. 1 and 2, the second embodiment is explained in FIG. 3, and the third embodiment is explained in FIG. 4. Illustrations and explanations of members that are the same as those in the figures are omitted.

但し、磁気抵抗効果素子14はNiFeにより形成した
薄膜とされており、ヘッド通電用の導体層54−1.5
4−2はCu、kQなどにより形成されている。
However, the magnetoresistive element 14 is a thin film made of NiFe, and a conductive layer 54-1.5 for head current supply is used.
4-2 is made of Cu, kQ, etc.

またシールド層56はNiFe、CoZrなどの強磁性
体により形成されており、バルクハウゼン雑音の抑制に
使用される導体N16はCu、A2などにより形成した
薄膜とされている。
The shield layer 56 is made of a ferromagnetic material such as NiFe or CoZr, and the conductor N16 used to suppress Barkhausen noise is a thin film made of Cu, A2, or the like.

さらに、端子12−1.12−2は感知部IOと同じN
iFeて形成されることが望ましいが、NjFeに限ら
ず軟磁性体であれば良い。
Furthermore, the terminals 12-1 and 12-2 are connected to the same N as the sensing part IO.
Although it is preferable to use iFe, it is not limited to NjFe, and any soft magnetic material may be used.

第1図において、導体層16はその面が磁気抵抗効果素
子14を含む平面と平行な姿勢とされており、導体層1
6の中間部には直角の段差が設けられている。
In FIG. 1, the conductor layer 16 has its surface parallel to the plane containing the magnetoresistive element 14, and the conductor layer 16
6 is provided with a right-angled step in the middle.

そして導体層16の長手方向は端子12−1゜12−2
の長手方向に対して直角に設定されており、導体層16
の段差中間部は感知部10を含む平面に対して直交した
姿勢となっている。
The longitudinal direction of the conductor layer 16 is the terminal 12-1°12-2.
The conductor layer 16 is set perpendicular to the longitudinal direction of the conductor layer 16.
The middle part of the step is in a posture perpendicular to the plane containing the sensing section 10.

さらに導体層16の段差中間部は感知部10の近情にお
い゛CC吊子12−1.12−2間図の上下方向へ挿通
されており、導体層16と磁気抵抗効果素子14とは絶
縁層60により絶縁されている。
Furthermore, the middle part of the step of the conductor layer 16 is inserted in the vertical direction of the CC hanger 12-1, 12-2 in the vicinity of the sensing part 10, and the conductor layer 16 and the magnetoresistive element 14 are insulated. It is insulated by layer 60.

導体層16には第2図のように雑音抑制用の電流iが外
部の定電流源から供給されており、その電流iにより感
知部10において磁化容易軸EAO軸方向に磁界Hが端
子12−1.12−2を介して加えられる。
A current i for noise suppression is supplied to the conductor layer 16 from an external constant current source as shown in FIG. 1.12-2.

磁化容易軸EAO軸方向へ外部から磁界Hが加えられる
と、IEEE  MAG−16,No5P643〜P6
45 (1980)で示されるように磁区の発生が抑制
され、バルクハウゼン雑音が減ぜられる。
When a magnetic field H is applied from the outside in the direction of the easy magnetization axis EAO axis, IEEE MAG-16, No5P643-P6
45 (1980), the generation of magnetic domains is suppressed and Barkhausen noise is reduced.

したがって、磁気ディスク50の記録密度を高めるため
に感知部10の長さしを短縮した場合でも、低雑音で品
質の高い再生を行なうことが可能となる。
Therefore, even if the length of the sensing section 10 is shortened to increase the recording density of the magnetic disk 50, it is possible to perform high-quality reproduction with low noise.

なお、必要以上の雑音抑制用電流iが供給される場合に
はヘッドの感度が低下するので、その電流値は雑音抑制
に十分なものに設定することが好ましい。
Note that if the noise suppression current i is supplied more than necessary, the sensitivity of the head decreases, so it is preferable to set the current value to a value sufficient for noise suppression.

また、雑音抑制用の磁界Hを永久磁化で得る場合には、
これを最適なものに一定化することが困難であるので、
ヘッドの感度低下を招き易い。
In addition, when obtaining the magnetic field H for noise suppression by permanent magnetization,
Since it is difficult to stabilize this to an optimal value,
This tends to lead to a decrease in the sensitivity of the head.

第3図の実施例では端子12−1.12−2の内側対向
辺に層状突起30−1.30−2が形成されており、そ
れらの形成位置は導体層16と交差する位置より図の上
側とされている。
In the embodiment shown in FIG. 3, layered protrusions 30-1, 30-2 are formed on the inner opposite sides of the terminals 12-1, 12-2, and their formation positions are as shown in the figure from the positions where they intersect with the conductor layer 16. It is considered to be the upper side.

また第4図の実施例においても層状突起40−1.40
−2が端子12−1.12−2の内側対向辺で同様に形
成されているが、第3図では突起30−1.30−2の
先端間に間隙が形成されているのに対し、第4図では突
起40−1.40−2が重ねられている。
Also in the embodiment shown in FIG.
-2 are similarly formed on the inner facing side of the terminals 12-1, 12-2, but in contrast to FIG. In FIG. 4, the protrusions 40-1 and 40-2 are superimposed.

但し、突起40−1.40−2は非接触とされており、
それら及び突起30−1.30−2は絶縁N60で絶縁
されている。
However, the protrusions 40-1 and 40-2 are non-contact,
They and the protrusions 30-1, 30-2 are insulated with insulation N60.

このように磁気抵抗の減少させる層状突起30−1.3
0−2.40−1.40−2が設けられたので、第3図
及び第4図の実施例では、磁界Hを効率的に発生させる
ことが可能となる。
Laminar projections 30-1.3 that reduce magnetic resistance in this way
0-2.40-1.40-2, it is possible to efficiently generate the magnetic field H in the embodiments of FIGS. 3 and 4.

以上説明したように本実施例によれば、感知部10の長
さしを短縮してもバルクハウゼン雑音を有効に抑制でき
るので、磁気ディスク50のトラック幅をさらに狭小化
してその記録密度をより高めることが可能となる。
As explained above, according to this embodiment, Barkhausen noise can be effectively suppressed even if the length of the sensing section 10 is shortened, so the track width of the magnetic disk 50 can be further narrowed to further increase its recording density. It is possible to increase it.

[発明の効果コ 以上説明したように本発明によれば、バルクハウゼン雑
音の原因となる磁区の発生を通電により抑制できるので
、磁気抵抗効果素子の感知部を微小化して磁気記録媒体
の記&jI密度を高めることが可能となる。
[Effects of the Invention] As explained above, according to the present invention, the generation of magnetic domains that cause Barkhausen noise can be suppressed by energizing, so the sensing part of the magnetoresistive element can be miniaturized and the recording of magnetic recording media can be improved. It becomes possible to increase the density.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は第1実施例の要部説明図、 第2[21は第1実施例の構成説明図、第3図は第2実
施例の構成説明図、 第4図は第3実施例の構成説明図、 第5図及び第6図は従来例の構成説明図である。 10・ ・ ・感知部、 12−1. 12−2・ ・ ・端子、14・・・磁気
抵抗効果素子、 16・・・導体層。 14(磁気抵抗効果素子) 第1実施例の要部説明図 第  1  図 第2実II!!、例の構成説明図 「■ ―■ 従来例の構成説明図 第5図
Fig. 1 is an explanatory diagram of the main parts of the first embodiment, Fig. 2 [21 is an explanatory diagram of the configuration of the first embodiment, Fig. 3 is an explanatory diagram of the configuration of the second embodiment, and Fig. 4 is an explanatory diagram of the configuration of the third embodiment. FIG. 5 and FIG. 6 are explanatory diagrams of the configuration of a conventional example. 10... Sensing section, 12-1. 12-2... Terminal, 14... Magnetoresistive element, 16... Conductor layer. 14 (Magnetoresistance effect element) Main part explanatory diagram of the first embodiment Figure 1 Figure 2 Part II! ! , Example configuration explanatory diagram “■ ―■ Configuration explanatory diagram of conventional example Fig. 5

Claims (1)

【特許請求の範囲】 磁気に応じて抵抗値が変化する感知部(10)の両側か
ら軟磁性体薄膜から成る端子(12−1、12−2)が
各々引き出された薄膜の磁気抵抗効果素子(14)と、 感知部(10)を含む平面に対し直交する姿勢で両端子
(12−1、12−2)間を感知部近傍において中間部
が挿通される導体層(16)と、を有する、ことを特徴
とする磁気抵抗効果型ヘッド。
[Claims] A thin film magnetoresistive element in which terminals (12-1, 12-2) made of soft magnetic thin films are drawn out from both sides of a sensing portion (10) whose resistance value changes according to magnetism. (14), and a conductor layer (16) whose intermediate portion is inserted between the terminals (12-1, 12-2) in the vicinity of the sensing portion in an orientation perpendicular to the plane containing the sensing portion (10). A magnetoresistive head characterized by having.
JP14716388A 1988-06-14 1988-06-14 Magneto-resistance effect type head Pending JPH01315016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14716388A JPH01315016A (en) 1988-06-14 1988-06-14 Magneto-resistance effect type head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14716388A JPH01315016A (en) 1988-06-14 1988-06-14 Magneto-resistance effect type head

Publications (1)

Publication Number Publication Date
JPH01315016A true JPH01315016A (en) 1989-12-20

Family

ID=15424013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14716388A Pending JPH01315016A (en) 1988-06-14 1988-06-14 Magneto-resistance effect type head

Country Status (1)

Country Link
JP (1) JPH01315016A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5748415A (en) * 1994-12-16 1998-05-05 International Business Machines Corporation Magnetoresistive head with a magnetoresistive film shaped to provide an improved read sensitivity profile
WO2008066185A1 (en) 2006-12-01 2008-06-05 Nitto Denko Corporation Method for prevention of discoloration with time of donepezil-containing skin adhesive preparation
WO2008066179A1 (en) 2006-12-01 2008-06-05 Nitto Denko Corporation Percutaneous absorption preparation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5748415A (en) * 1994-12-16 1998-05-05 International Business Machines Corporation Magnetoresistive head with a magnetoresistive film shaped to provide an improved read sensitivity profile
WO2008066185A1 (en) 2006-12-01 2008-06-05 Nitto Denko Corporation Method for prevention of discoloration with time of donepezil-containing skin adhesive preparation
WO2008066179A1 (en) 2006-12-01 2008-06-05 Nitto Denko Corporation Percutaneous absorption preparation

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