JPH08124122A - Magnetoresistive reproducing head and magnetic recording/reproducing device - Google Patents

Magnetoresistive reproducing head and magnetic recording/reproducing device

Info

Publication number
JPH08124122A
JPH08124122A JP26000894A JP26000894A JPH08124122A JP H08124122 A JPH08124122 A JP H08124122A JP 26000894 A JP26000894 A JP 26000894A JP 26000894 A JP26000894 A JP 26000894A JP H08124122 A JPH08124122 A JP H08124122A
Authority
JP
Japan
Prior art keywords
film
magnetic
head
magnetoresistive
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26000894A
Other languages
Japanese (ja)
Inventor
Kazuhisa Fujimoto
和久 藤本
Yasutaro Kamisaka
保太郎 上坂
Ko Suzuki
香 鈴木
Makoto Aihara
誠 相原
Kazuyoshi Yoshida
和悦 吉田
Hiroshi Fukui
宏 福井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP26000894A priority Critical patent/JPH08124122A/en
Publication of JPH08124122A publication Critical patent/JPH08124122A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To increase the reproducing output of a magnetoresistive reproducing head. CONSTITUTION: A lower shielding film (NiFe film) 10 of 2μm thickness, a magnetic gap forming insulating film (Al2 O3 film) 20 of 0.2μm thickness, a soft magnetic film (NiFeNb film) 30 of 20nm thickness a nonmagnetic electrically conductive film (Ta film) 40 of 15nm thickness and a magnetoresistive film (NiFe film) 50 of 20nm thickness are successively laminated on a substrate 5 and patterning is carried out so as to decide the height of the magneto- resistive film 50. An org. resist film is then laminated and patterning is carried out in the desired shape.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、磁気記録媒体から情報
信号を読み取るための再生ヘッドに係り、特に、改良さ
れた磁気抵抗効果再生ヘッドならびにそれを用いた磁気
記録再生装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reproducing head for reading an information signal from a magnetic recording medium, and more particularly to an improved magnetoresistive effect reproducing head and a magnetic recording / reproducing apparatus using the same.

【0002】[0002]

【従来の技術】従来、磁気抵抗効果(以下MR)センサ
またはヘッドと呼ばれる磁気読み取り変換器が知られて
いる。MRセンサは、磁気抵抗効果材料から作った読み
取り素子の抵抗変化を利用して、磁気信号を素子が感知
する磁束の量および方向の関数として検出するもので、
従来のインダクティブヘッドを用いた場合にくらべて、
より大きな再生出力をえることができる。
2. Description of the Related Art Conventionally, a magnetic reading converter called a magnetoresistive effect (MR) sensor or head is known. MR sensors utilize the resistance change of a read element made of a magnetoresistive material to detect a magnetic signal as a function of the amount and direction of magnetic flux sensed by the element,
Compared with the case of using the conventional inductive head,
A larger reproduction output can be obtained.

【0003】しかし、記録密度が大きくなるにつれて、
記録媒体から発生する磁界が小さくなり、MRヘッドを
用いても適当な再生出力を確保することが困難となる。
However, as the recording density increases,
The magnetic field generated from the recording medium becomes small, and it becomes difficult to secure an appropriate reproduction output even if an MR head is used.

【0004】なお、従来では、MR素子が最適に動作す
るためには、二つのバイアス磁界をかける必要があるこ
とが示されている。磁束に対する応答が線形になるよう
にMR素子にバイアスをかけるために、一般に横方向バ
イアス磁界を使用する。このバイアス磁界は、磁気媒体
の面に垂直で平坦なMR素子の表面に平行である。この
バイアス印加法には電流バイアス,シャントバイアス,
ソフトバイアス,ソフトアジィセントレーヤ(以下SA
L)バイアス等、種々の方法がある。これらの横方向バ
イアスはヘッドをRーH特性曲線の最も直線的な範囲に
バイアスさせるのに十分なレベルで発生される。本発明
は、このうち、SALバイアス法を用いたものである
が、他のバイアス法にも適用可能なものである。
Incidentally, it has been conventionally shown that it is necessary to apply two bias magnetic fields in order for the MR element to operate optimally. A lateral bias field is generally used to bias the MR element so that its response to the magnetic flux is linear. This bias field is perpendicular to the plane of the magnetic medium and parallel to the flat MR element surface. Current bias, shunt bias,
Soft Bias, Soft Aji Centrair (hereinafter SA
L) There are various methods such as bias. These lateral biases are generated at a level sufficient to bias the head into the most linear range of the RH characteristic curve. Of these, the present invention uses the SAL bias method, but is also applicable to other bias methods.

【0005】MR素子で使用されている他のバイアス磁
界は、当技術分野で縦バイアス磁界と呼ばれるもので、
磁気媒体の表面に平行、かつ、MR素子の長手方向に平
行である。縦バイアス磁界の機能は、MR素子内の多磁
区作用から生じるバルクハウゼンノイズを抑えることで
ある。縦バイアス磁界は特開昭62−40610 号や特開昭63
−117309号公報に示されているように、反強磁性膜を用
いる方法や特開平2−220213号や特開平3−29105号公報
に示されているように永久磁石膜を用いる方法がある。
本発明は、このうち、永久磁石膜バイアス法あるいは反
強磁性膜バイアス法を用いたものであるが、他のバイア
ス法をも適用可能なものである。なお、反強磁性膜バイ
アス法を用いる場合、反強磁性膜あるいは磁気抵抗効果
膜を電極直下に設ける場合、あるいは軟磁性膜を電極直
下に設ける場合の3種類の方法があるが、本発明はいず
れの方法にも適用可能である。
Another bias field used in MR elements is what is referred to in the art as the longitudinal bias field,
It is parallel to the surface of the magnetic medium and parallel to the longitudinal direction of the MR element. The function of the longitudinal bias magnetic field is to suppress Barkhausen noise caused by multi-domain effect in the MR element. The longitudinal bias magnetic field is disclosed in Japanese Patent Laid-Open Nos. 62-40610 and 63.
There is a method of using an antiferromagnetic film as shown in Japanese Unexamined Patent Publication No. 117309, and a method of using a permanent magnet film as shown in Japanese Unexamined Patent Publication Nos. 2-220213 and 3-29105.
Of these, the present invention uses the permanent magnet film bias method or the antiferromagnetic film bias method, but other bias methods are also applicable. The antiferromagnetic film bias method is used, the antiferromagnetic film or the magnetoresistive film is provided directly under the electrode, or the soft magnetic film is provided directly under the electrode. It is applicable to either method.

【0006】[0006]

【発明が解決しようとする課題】ところで、記録媒体か
ら磁気ヘッドの磁気抵抗効果膜に入る磁界は、媒体対抗
面が最大であり、媒体対抗面から離れるにつれて急激に
減少する。このため、媒体による磁界が入った場合の磁
気抵抗効果膜中の磁化は媒体対抗面近傍が大きく回転
し、媒体対抗面と反対側では、磁化はほとんど変化しな
い。この磁化がほとんど変化しない部分は雑音を大きく
する効果のみがあり、出力にはほとんど影響しない。し
かし、この部分を単純に削除すると、反磁界のために、
媒体による磁界が入った場合に磁化が回転する領域はさ
らに少なくなる。
By the way, the magnetic field entering the magnetoresistive film of the magnetic head from the recording medium is maximum at the medium facing surface, and sharply decreases as the distance from the medium facing surface increases. Therefore, when the magnetic field from the medium is applied, the magnetization in the magnetoresistive effect film largely rotates in the vicinity of the medium facing surface, and the magnetization hardly changes on the side opposite to the medium facing surface. The portion where the magnetization hardly changes has only an effect of increasing noise and has almost no effect on the output. However, if this part is simply deleted, due to the demagnetizing field,
The area in which the magnetization rotates when the magnetic field from the medium enters is further reduced.

【0007】本発明の目的は上述の欠点で解消し、高記
録密度で高い再生出力を得ることできるMRヘッドを提
供することにある。
An object of the present invention is to solve the above-mentioned drawbacks and to provide an MR head capable of obtaining a high reproduction output at a high recording density.

【0008】[0008]

【課題を解決するための手段】図1あるいは図2に示す
ように、磁気抵抗効果膜における媒体対向面と反対側の
面間の距離aを電極における媒体対向面と反対側の面間
の距離bよりも長くすることにより、媒体による磁界が
入った場合に磁化が回転する領域を大きくし、これによ
り、大きな再生出力の磁気抵抗効果型ヘッドを作成し
た。
As shown in FIG. 1 or FIG. 2, the distance a between the surfaces of the magnetoresistive film on the side opposite to the medium facing surface is defined as the distance between the surfaces of the electrodes on the side opposite to the medium facing surface. By making the length longer than b, the region in which the magnetization rotates when a magnetic field from the medium is applied is enlarged, and thus a magnetoresistive head having a large reproduction output is produced.

【0009】本発明の磁気抵抗効果型ヘッドは、磁気記
録用誘導型薄膜ヘッドと組み合わせて記録再生分離型磁
気ヘッドを構成するのが好ましい。本発明の記録再生ヘ
ッドは2000Oe以上の高い保磁力の記録媒体の信号を再
生する際にとくに有効である。
The magnetoresistive head of the present invention is preferably combined with an inductive thin film head for magnetic recording to form a recording / reproducing separated type magnetic head. The recording / reproducing head of the present invention is particularly effective in reproducing a signal from a recording medium having a high coercive force of 2000 Oe or more.

【0010】[0010]

【作用】本発明において、図1あるいは、図2の磁気抵
抗効果膜中の離間した電極80に対向した部分1には電
流が多く流れるが、磁気抵抗効果膜中の離間した電極に
対向しない部分2には電流はあまり流れない。しかしこ
の部分が存在することにより、前述したように、媒体か
ら磁界が入った場合に磁気抵抗効果膜の磁化が回転する
領域が大きくなるため、再生出力を大きくできる。
In the present invention, a large amount of current flows through the portion 1 of the magnetoresistive film of FIG. 1 or 2 which faces the separated electrode 80, but the portion of the magnetoresistive film which does not face the separated electrode. 2 does not have much current. However, the presence of this portion increases the region where the magnetization of the magnetoresistive film rotates when a magnetic field is applied from the medium, as described above, so that the reproduction output can be increased.

【0011】本発明は、横バイアス印加用の軟磁性膜,
非磁性導電膜、および、磁気抵抗効果膜を備えた磁気抵
抗効果型ヘッドに関するものであるが、その他の磁気抵
抗効果型ヘッド、例えば、非磁性導電膜のかわりに、非
磁性絶縁膜を用いたヘッドや、横バイアス印加用の軟磁
性膜の代わりに磁気抵抗効果膜を用いたデュアルタイプ
MRヘッド、あるいは、横バイアス磁界印加のために、
永久磁石膜を用いたヘッドなどにも有効である。
The present invention relates to a soft magnetic film for applying a lateral bias,
The present invention relates to a magnetoresistive head having a nonmagnetic conductive film and a magnetoresistive film, but a nonmagnetic insulating film is used instead of another magnetoresistive head, for example, a nonmagnetic conductive film. For a head, a dual type MR head using a magnetoresistive film instead of a soft magnetic film for applying a lateral bias, or for applying a lateral bias magnetic field,
It is also effective for a head using a permanent magnet film.

【0012】[0012]

【実施例】【Example】

(実施例1)図3に、本発明の一実施例の磁気抵抗効果
型ヘッドの感磁部の容易軸方向の断面図を示す。
(Embodiment 1) FIG. 3 shows a cross-sectional view in the easy axis direction of a magnetic sensing portion of a magnetoresistive head according to an embodiment of the present invention.

【0013】基板5上に、厚さ2μmの下部シールド膜
(NiFe膜)10,厚さ0.2μmの磁気ギャップ形成
用絶縁膜(Al23膜)20,厚さ20nmの軟磁性膜
(NiFeNb膜)30,長さ15nmの非磁性導電膜
(Ta膜)40,厚さ20nmの磁気抵抗効果膜(Ni
Fe膜)50を積層した後、磁気抵抗効果膜の高さを決
めるためのパターニングを行う。次に、有機レジスト膜
を積層した後、所望の形状にパターニングを行う。
A lower shield film having a thickness of 2 μm is formed on the substrate 5.
(NiFe film) 10, 0.2 μm thick insulating film (Al 2 O 3 film) 20 for forming a magnetic gap, 20 nm thick soft magnetic film (NiFeNb film) 30, 15 nm long non-magnetic conductive film (Ta) 40), 20 nm thick magnetoresistive film (Ni
After stacking the Fe film) 50, patterning is performed to determine the height of the magnetoresistive effect film. Next, after stacking the organic resist film, patterning is performed into a desired shape.

【0014】さらに、厚さ30nmの永久磁石膜用下地
膜(Cr膜)60、および厚さ30nmの永久磁石膜
(CoCrPt膜)70を積層し所望の形状に加工した
後、Nb/Au/Nbを積層、加工し電極80とする。
さらに、厚さ0.155μmの磁気ギャップ形成用絶縁
膜(Al23膜)90,厚さ2μmの上部シールド膜
(NiFe膜)100を積層し所望の形状に加工して磁
気ヘッドとした。
Further, a base film (Cr film) 60 for a permanent magnet film having a thickness of 30 nm and a permanent magnet film (CoCrPt film) 70 having a thickness of 30 nm are laminated and processed into a desired shape, and then Nb / Au / Nb. Are laminated and processed to form an electrode 80.
Further, an insulating film (Al 2 O 3 film) 90 having a thickness of 0.155 μm and an upper shield film (NiFe film) 100 having a thickness of 2 μm were laminated and processed into a desired shape to form a magnetic head.

【0015】以上の過程を経て作製した磁気抵抗効果型
ヘッドは、図1における長さaが3.5μm、bが2.5
μmであり、電極間距離は3.5μm であった。このヘ
ッドを用いて得た100kFCIにおける再生出力は
0.19mV であり、従来のaとbの長さがともに2.
5μmと等しいヘッドの再生出力0.12mVにくらべ
て、60%ほど特性が向上した。
The magnetoresistive head manufactured through the above process has a length a of 3.5 μm and a b of 2.5 in FIG.
and the distance between the electrodes was 3.5 μm. The reproduction output at 100 kFCI obtained using this head is 0.19 mV, and the conventional a and b lengths are both 2.
The characteristics were improved by about 60% as compared with the head reproduction output of 0.12 mV which is equal to 5 μm.

【0016】(実施例2)図4に、本発明の別の実施例
の磁気抵抗効果型ヘッドの感磁部の容易軸方向の断面図
を示す。基板5上に、厚さ2μmの下部シールド膜(N
iFe膜)10,厚さ0.2μm の磁気ギャップ形成用
絶縁膜(Al23膜)20,厚さ20nmの磁区制御用
NiO膜110,厚さ20nmの絶縁用Al23膜12
0を積層した後、最上部のAl23膜を所望の形状に加
工する。次に、厚さ20nmの磁気抵抗効果膜(NiF
e膜)50,厚さ15nmの非磁性導電膜(Ta膜)4
0,厚さ20nmの軟磁性膜(NiFeNb膜)30を
積層した後、所望の形状に加工する。次に電極用Nb/
Au/Nb80を積層し、所望の形状に加工した後、厚
さ0.155μmの磁気ギャップ形成膜(Al23膜)9
0,厚さ2μmの磁気シールド膜(NiFe膜)100
を積層し所望の形状に加工して磁気ヘッドとした。
(Embodiment 2) FIG. 4 shows a cross-sectional view in the easy axis direction of a magnetic sensing part of a magnetoresistive head according to another embodiment of the present invention. On the substrate 5, a 2 μm thick lower shield film (N
iFe film) 10, 0.2 μm thick insulating film (Al 2 O 3 film) 20 for magnetic gap formation, 20 nm thick NiO film 110 for controlling magnetic domains, 20 nm thick insulating Al 2 O 3 film 12
After stacking 0, the uppermost Al 2 O 3 film is processed into a desired shape. Next, a magnetoresistive film (NiF) having a thickness of 20 nm is formed.
e film) 50, non-magnetic conductive film (Ta film) 4 having a thickness of 15 nm 4
After stacking a soft magnetic film (NiFeNb film) 30 having a thickness of 0 and a thickness of 20 nm, it is processed into a desired shape. Next, Nb / for electrode
After stacking Au / Nb80 and processing it into a desired shape, a magnetic gap forming film (Al 2 O 3 film) 9 having a thickness of 0.155 μm 9
0, magnetic shield film (NiFe film) 100 with a thickness of 2 μm
Was laminated and processed into a desired shape to obtain a magnetic head.

【0017】以上の過程を経て作製した磁気抵抗効果型
ヘッドは、図1における長さaが3.5μm、bが2.5
μmであり、電極間距離は3.5μm であった。このヘ
ッドを用いて得た100kFCIにおけ再生出力は0.
19mV であり、従来のaとbの長さがともに2.5μ
mと等しいヘッドの再生出力0.12mVにくらべて、
60%ほど特性が向上した。
The magnetoresistive head manufactured through the above process has a length a of 3.5 μm and a b of 2.5 in FIG.
and the distance between the electrodes was 3.5 μm. The reproduction output at 100 kFCI obtained using this head is 0.
19 mV, both conventional a and b have a length of 2.5μ
Compared to the playback output of the head equal to m of 0.12 mV,
The characteristics were improved by about 60%.

【0018】(実施例3)本発明の磁気抵抗効果素子を
再生用ヘッドに用い、従来公知の誘導型薄膜ヘッドを記
録用ヘッドとして用いる記録再生分離型磁気ヘッドを作
製した。図5に、本実施例による記録再生分離型ヘッド
の一部分を切断した斜視図を示す。
(Embodiment 3) The magnetoresistive effect element of the present invention was used as a reproducing head, and a recording / reproducing separated type magnetic head using a conventionally known inductive type thin film head as a recording head was manufactured. FIG. 5 shows a perspective view in which a part of the recording / reproducing separated type head according to the present embodiment is cut.

【0019】Al23・TiCを主成分とする焼結体を
スライダ用の基板5とした。実施例2に示した方法によ
り下部シールド膜10形成し、その上に磁気ギャップ形
成用絶縁膜(Al23膜),磁区制御用NiO膜,絶縁
用Al23膜積層した後、最上部のAl23膜を所望の
形状に加工した。次に、磁気抵抗効果膜(NiFe膜),
非磁性導電膜(Ta膜),厚さ20nmの軟磁性膜(N
iFeNb膜)30を積層した後、所望の形状に加工す
る。次に電極用Nb/Au/Nb80を積層し、所望の
形状に加工した後、磁気ギャップ形成膜(Al2
3膜),磁気シールド膜(NiFe膜)100を形成し
た。以上の部分が再生ヘッドとして働く。
A sintered body containing Al 2 O 3 .TiC as a main component was used as the substrate 5 for the slider. After the lower shield film 10 is formed by the method shown in Embodiment 2, an insulating film (Al 2 O 3 film) for forming a magnetic gap, a NiO film for controlling a magnetic domain, and an Al 2 O 3 film for insulating are laminated thereon, The upper Al 2 O 3 film was processed into a desired shape. Next, a magnetoresistive film (NiFe film),
Non-magnetic conductive film (Ta film), soft magnetic film (N film) with a thickness of 20 nm
After the iFeNb film) 30 is laminated, it is processed into a desired shape. Next, Nb / Au / Nb80 for electrodes is laminated and processed into a desired shape, and then a magnetic gap forming film (Al 2 O
3 films) and a magnetic shield film (NiFe film) 100 were formed. The above part functions as a reproducing head.

【0020】次に、磁気記録用ヘッドとして、厚さ3μ
mのAl23からなる絶縁膜を形成した後、下部磁極1
30,上部磁極140およびコイル150からなる誘導
型薄膜ヘッドを形成した。下部磁極130,上部磁極1
40には、スパッタリング法で形成した膜厚3.0μm
のNi−20at%Fe合金を用いた。下部磁極130お
よび上部磁極140の間のギャップ層には、スパッタリ
ング法で形成した膜厚0.2μmのAl23を用いた。
コイル150には、膜厚3.0μmのCuを使用した。
下部磁極130と上部磁極140は磁気的に結合されて
磁気回路を構成し、コイル150はその磁気回路に鎖交
している。
Next, as a magnetic recording head, the thickness is 3 μm.
After forming an insulating film of Al 2 O 3 of m, the lower magnetic pole 1
An inductive thin film head composed of 30, the upper magnetic pole 140 and the coil 150 was formed. Lower magnetic pole 130, upper magnetic pole 1
40 has a film thickness of 3.0 μm formed by the sputtering method.
Ni-20 at% Fe alloy was used. For the gap layer between the lower magnetic pole 130 and the upper magnetic pole 140, Al 2 O 3 having a film thickness of 0.2 μm formed by the sputtering method was used.
Cu having a film thickness of 3.0 μm was used for the coil 150.
The lower magnetic pole 130 and the upper magnetic pole 140 are magnetically coupled to form a magnetic circuit, and the coil 150 is linked to the magnetic circuit.

【0021】以上述べた構造の磁気ヘッドを用い、磁気
抵抗効果素子に流すセンス電流を1×107A/cm2とし
て記録再生実験を行ったところ、MR膜の媒体対向面と
反対側の距離が電極の媒体対向面と反対側の距離に等し
い従来の磁気ヘッドを用いた場合に比べて、60%大き
な出力値を得た。
When a recording / reproducing experiment was conducted using the magnetic head having the above-mentioned structure and the sense current flowing through the magnetoresistive effect element at 1 × 10 7 A / cm 2 , the distance between the MR film and the surface opposite to the medium-opposing surface was measured. A 60% larger output value was obtained as compared with the case of using a conventional magnetic head in which is equal to the distance on the side opposite to the medium facing surface of the electrode.

【0022】(実施例4)実施例3で述べた本発明によ
る磁気ヘッドを用い、磁気ディスク装置を作製した。図
6に磁気ディスク装置の構造の概略を示す。
(Embodiment 4) Using the magnetic head according to the present invention described in Embodiment 3, a magnetic disk device was manufactured. FIG. 6 schematically shows the structure of the magnetic disk device.

【0023】磁気記録媒体160には、残留磁束密度
0.75T のCo−Ni−Pt−Ta系合金からなる材
料を用いた。磁気記録媒体160は駆動部170によっ
て回転駆動される。磁気ヘッド180の記録ヘッドのト
ラック幅は2μm、再生ヘッドのトラック幅は1.5μ
m とした。磁気ヘッド180は、駆動部190によっ
て回転駆動されて磁気記録媒体160上のトラックを選
択できる。磁気ヘッド180による記録再生信号は記録再
生信号処理系200で処理される。
For the magnetic recording medium 160, a material made of a Co-Ni-Pt-Ta alloy having a residual magnetic flux density of 0.75T was used. The magnetic recording medium 160 is rotationally driven by the driving unit 170. The track width of the recording head of the magnetic head 180 is 2 μm, and the track width of the reproducing head is 1.5 μm.
m. The magnetic head 180 is rotationally driven by the driving unit 190 and can select a track on the magnetic recording medium 160. The recording / reproducing signal from the magnetic head 180 is processed by the recording / reproducing signal processing system 200.

【0024】磁気ヘッド180に用いた磁気抵抗効果素
子は、従来の構造の磁気抵抗効果素子の1.6 倍の出力
を出すため、さらにトラック幅が狭く、記録密度の高い
磁気ディスク装置を作製することもできる。
The magnetoresistive effect element used in the magnetic head 180 produces 1.6 times the output of the magnetoresistive effect element of the conventional structure, so that a magnetic disk device having a narrower track width and a higher recording density is manufactured. You can also

【0025】[0025]

【発明の効果】本発明によると、磁気抵抗効果型再生ヘ
ッドにおける再生出力を増大させることが可能となる。
According to the present invention, it is possible to increase the reproduction output of the magnetoresistive reproducing head.

【図面の簡単な説明】[Brief description of drawings]

【図1】縦バイアスとして永久磁石膜を用いた場合の本
発明による磁気抵抗効果膜と電極の断面図。
FIG. 1 is a sectional view of a magnetoresistive film and an electrode according to the present invention when a permanent magnet film is used as a longitudinal bias.

【図2】縦バイアスとして反強磁性膜を用いた場合の本
発明による磁気抵抗効果膜と電極の断面図。
FIG. 2 is a sectional view of a magnetoresistive film and an electrode according to the present invention when an antiferromagnetic film is used as a longitudinal bias.

【図3】縦バイアスとして永久磁石膜を用いた場合の本
発明による磁気抵抗効果素子の断面図。
FIG. 3 is a sectional view of a magnetoresistive element according to the present invention when a permanent magnet film is used as a longitudinal bias.

【図4】縦バイアスとして反強磁性膜を用いた場合の本
発明による磁気抵抗効果素子の断面図。
FIG. 4 is a sectional view of a magnetoresistive element according to the present invention when an antiferromagnetic film is used as a longitudinal bias.

【図5】本発明の磁気抵抗効果素子を用いた記録再生分
離型磁気ヘッドの構造を示す斜視図。
FIG. 5 is a perspective view showing the structure of a recording / reproducing separated type magnetic head using the magnetoresistive effect element of the present invention.

【図6】記録再生装置の説明図。FIG. 6 is an explanatory diagram of a recording / reproducing device.

【符号の説明】[Explanation of symbols]

5…基板、10…下部シールド膜、20…下部磁気ギャ
ップ形成用絶縁膜、30…軟磁性膜、40…非磁性導電
膜、50…磁気抵抗効果膜、60…永久磁石用下地膜、
70…永久磁石膜、80…電極、90…上部磁気ギャッ
プ形成用絶縁膜、100…上部シールド膜。
5 ... Substrate, 10 ... Lower shield film, 20 ... Insulating film for forming lower magnetic gap, 30 ... Soft magnetic film, 40 ... Nonmagnetic conductive film, 50 ... Magnetoresistive film, 60 ... Underlayer film for permanent magnet,
70 ... Permanent magnet film, 80 ... Electrode, 90 ... Insulating film for forming upper magnetic gap, 100 ... Upper shield film.

フロントページの続き (72)発明者 相原 誠 東京都国分寺市東恋ケ窪1丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 吉田 和悦 東京都国分寺市東恋ケ窪1丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 福井 宏 神奈川県小田原市国府津2880番地 株式会 社日立製作所ストレージシステム事業部内Front page continuation (72) Inventor Makoto Aihara 1-280 Higashi Koikekubo, Kokubunji, Tokyo Inside Hitachi Central Research Laboratory (72) Inventor Kaetsu Yoshida 1-280 Higashi Koikeku, Tokyo Kokubunji City Inside Central Research Laboratory, Hitachi Ltd. (72) Inventor Hiroshi Fukui 2880 Kokuzu, Odawara City, Kanagawa Stock Company Hitachi Storage Systems Division

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】基板上に積層して設けられた横バイアス印
加用の軟磁性膜,非磁性導電膜,磁気抵抗効果膜,前記
磁気抵抗効果膜の両端に設けられた縦バイアス印加用の
一対の永久磁石膜,前記永久磁石膜上に設けられた一対
の電極を備えた磁気抵抗効果型ヘッドにおいて、前記磁
気抵抗効果膜における媒体対向面と反対側の面間の距離
が、前記磁気抵抗効果膜に接した電極の媒体対向面と反
対側の面間の距離よりも長いことを特徴とする磁気抵抗
効果再生ヘッド。
1. A soft magnetic film for applying a lateral bias, a non-magnetic conductive film, a magnetoresistive effect film, and a pair for longitudinal bias application provided on both ends of the magnetoresistive effect film, which are laminated on a substrate. In the magnetoresistive head including the permanent magnet film and the pair of electrodes provided on the permanent magnet film, the distance between the surface of the magnetoresistive film opposite to the medium facing surface is the magnetoresistive effect. A magnetoresistive effect reproducing head characterized in that it is longer than the distance between the surface of the electrode in contact with the film and the surface opposite to the medium.
【請求項2】基板上に積層して設けられた横バイアス印
加用の軟磁性膜,非磁性導電膜,磁気抵抗効果膜,前記
磁気抵抗効果膜上に離間して設けられた一対の反強磁性
膜を含む多層膜,前記多層膜の上に設けられた一対の電
極を備え、前記一対の反強磁性膜は電極の下方領域に設
けられている磁気抵抗効果型再生ヘッドにおいて、前記
磁気抵抗効果膜の磁化回転部における媒体対向面と反対
側の面間の距離が、反強磁性膜に接した電極の媒体対向
面と反対側の面間の距離よりも長いことを特徴とする磁
気抵抗効果再生ヘッド。
2. A soft magnetic film for applying a lateral bias, a non-magnetic conductive film, a magnetoresistive film, and a pair of anti-strength films provided separately on the magnetoresistive film, which are laminated on the substrate. A magnetoresistive effect reproducing head comprising: a multilayer film including a magnetic film; and a pair of electrodes provided on the multilayer film, wherein the pair of antiferromagnetic films are provided in a region below the electrodes. Magnetoresistance, characterized in that the distance between the surface of the magnetization rotating portion of the effect film opposite to the medium facing surface is longer than the distance between the surface of the electrode contacting the antiferromagnetic film and the surface opposite to the medium. Effect playhead.
【請求項3】基板上に積層して設けられた一対の反強磁
性膜,その上に積層された磁気抵抗効果膜,非磁性導電
膜,バイアス磁界印加用の軟磁性膜を含む多層膜と、前
記多層膜の上に設けられた一対の電極とを備え、前記軟
磁性膜は前記一対の電極の下方に設けられている磁気抵
抗効果型再生ヘッドにおいて、前記磁気抵抗効果膜の磁
化回転部における媒体対向面と反対側の面間の距離が、
前記軟磁性膜に接した電極における媒体対向面と反対側
の面間の距離よりも長いことを特徴とする磁気抵抗効果
再生ヘッド。
3. A multi-layered film including a pair of antiferromagnetic films laminated on a substrate, a magnetoresistive film laminated thereon, a non-magnetic conductive film, and a soft magnetic film for applying a bias magnetic field. A pair of electrodes provided on the multilayer film, wherein the soft magnetic film is provided below the pair of electrodes. The distance between the medium facing surface and the surface on the opposite side in
A magnetoresistive effect reproducing head characterized in that it is longer than a distance between a surface of the electrode in contact with the soft magnetic film and a surface opposite to the medium.
【請求項4】請求項1,2または3において、積層方向
に離間して設けられた一対の磁気シールド膜を更に備
え、前記多層膜および前記一対の電極は前記一対の磁気
シールド膜の間に設けられている磁気抵抗効果型ヘッ
ド。
4. The pair of magnetic shield films according to claim 1, 2 or 3, further comprising a pair of magnetic shield films provided in the stacking direction so as to be separated from each other, wherein the multilayer film and the pair of electrodes are provided between the pair of magnetic shield films. A magnetoresistive head provided.
【請求項5】請求項1,2,3または4において、一対
の磁極,該一対の磁極を磁気的に焼結する磁気回路手段
および前記磁気回路に鎖交するコイルを含む磁気記録用
誘導型薄膜ヘッドと、磁気抵抗効果型再生ヘッドとを備
える記録再生分離型磁気ヘッド。
5. The induction type for magnetic recording according to claim 1, 2, 3 or 4, comprising a pair of magnetic poles, magnetic circuit means for magnetically sintering the pair of magnetic poles, and a coil interlinking with the magnetic circuit. A recording / reproducing separated type magnetic head comprising a thin film head and a magnetoresistive effect reproducing head.
【請求項6】請求項1,2,3,4または5において、
前記磁気記録媒体と、ヘッドと前記磁気記録媒体と前記
ヘッドとを相対的に駆動する駆動手段と、前記ヘッドに
接続された記録再生信号処理計とを含む磁気記録再生装
置。
6. The method according to claim 1, 2, 3, 4 or 5.
A magnetic recording / reproducing apparatus including the magnetic recording medium, a head, a driving unit that relatively drives the magnetic recording medium, and the head, and a recording / reproducing signal processor connected to the head.
JP26000894A 1994-10-25 1994-10-25 Magnetoresistive reproducing head and magnetic recording/reproducing device Pending JPH08124122A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26000894A JPH08124122A (en) 1994-10-25 1994-10-25 Magnetoresistive reproducing head and magnetic recording/reproducing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26000894A JPH08124122A (en) 1994-10-25 1994-10-25 Magnetoresistive reproducing head and magnetic recording/reproducing device

Publications (1)

Publication Number Publication Date
JPH08124122A true JPH08124122A (en) 1996-05-17

Family

ID=17342029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26000894A Pending JPH08124122A (en) 1994-10-25 1994-10-25 Magnetoresistive reproducing head and magnetic recording/reproducing device

Country Status (1)

Country Link
JP (1) JPH08124122A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0916914A (en) * 1995-06-28 1997-01-17 Nec Corp Permanent magnet bias type magneto-resistive head and its production
US6754051B2 (en) 1999-03-24 2004-06-22 Tdk Corporation Spin valve transducer having partly patterned magnetoresistance element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0916914A (en) * 1995-06-28 1997-01-17 Nec Corp Permanent magnet bias type magneto-resistive head and its production
US6754051B2 (en) 1999-03-24 2004-06-22 Tdk Corporation Spin valve transducer having partly patterned magnetoresistance element
US7079360B2 (en) 1999-03-24 2006-07-18 Tdk Corporation Spin valve transducer having partly patterned magnetoresistance element
US7085109B1 (en) 1999-03-24 2006-08-01 Tdk Corporation Spin valve type transducer capable of reducing reproducing gap

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