JPS5864745A - Ion source - Google Patents

Ion source

Info

Publication number
JPS5864745A
JPS5864745A JP56163321A JP16332181A JPS5864745A JP S5864745 A JPS5864745 A JP S5864745A JP 56163321 A JP56163321 A JP 56163321A JP 16332181 A JP16332181 A JP 16332181A JP S5864745 A JPS5864745 A JP S5864745A
Authority
JP
Japan
Prior art keywords
target
ions
ion source
auxiliary electrodes
neutral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56163321A
Other languages
Japanese (ja)
Other versions
JPS5836463B2 (en
Inventor
Norihiro Naito
内藤統広
Yoshihiro Naito
内藤善博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP56163321A priority Critical patent/JPS5836463B2/en
Publication of JPS5864745A publication Critical patent/JPS5864745A/en
Publication of JPS5836463B2 publication Critical patent/JPS5836463B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00Particle spectrometers or separator tubes
    • H01J49/02Details
    • H01J49/10Ion sources; Ion guns
    • H01J49/14Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
    • H01J49/142Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers using a solid target which is not previously vapourised

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Tubes For Measurement (AREA)

Abstract

PURPOSE:To enable ions to be efficiently taken out with a simple constitution of installing auxiliary electrodes by locating the auxiliary electrodes near the surface of a target against which neutral particles collide, and applying an electric potential different from that of the target to said auxiliary electrodes. CONSTITUTION:A high-speed Ar atom beam 10 produced in a neutral particle source 1 used for producing a neutral particle beam such as an Ar atom beam, after being introduced into an ionization box 12 through a cut part 11, bumps against a target surface which is made oblique to the atom beam 10; the target 13 is inserted into above box from the back of above box. The target 13 is attached to the end of an introduction probe 15 through an insulating body 14. An acceleration voltage (Va) is applied to the target 13 from an accelerating power source 16. On the other hand, a slit electrode group 20-23 used for drawing out and accelerating ions produced from the target 13 is installed, and appropriate voltages given by dividing the acceleration voltage (Va) with a voltage divider 24 are made to be applied to the electrodes 20-23.

Description

【発明の詳細な説明】 本発明は質量分析装置に用いて好適なイオン源1ζ関し
、特に試料に高速中性粒子を衝突させてイン屈する方式
のイオン源I【関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an ion source 1ζ suitable for use in a mass spectrometer, and particularly to an ion source I that is inverted by colliding high-speed neutral particles with a sample.

質量分析装置蟲ζ用いられるイオン源のイオン化方式と
しては電子衝撃型、化学電離型、電界電離型あるいは電
界脱離型等が次々と開発され実用化   ′されている
。近時試料I【高いエネルギーを持った高速中性粒子(
例えばAr原子)を衝突させ、そのエネルギー−こより
試料をイオン化する新しいイオン化方式が提案され、+
1)イオン化のエネルギー幅が大である。f2)正イオ
ンばかりで々〈負イオンの生成率も高い、(3)加熱気
化が不要なため試料の熱分解が少ない、(4)中性粒子
なのでチャージアップがなく絶縁物でも容易にイオン化
できる等多くの優れた点全待った方式として今後の発達
が期持されている。
As the ionization method of the ion source used in mass spectrometers, electron impact type, chemical ionization type, field ionization type, and field desorption type have been successively developed and put into practical use. Recent sample I [fast neutral particles with high energy (
A new ionization method has been proposed in which the sample is ionized by colliding with Ar atoms (for example, Ar atoms) and the resulting energy is used to ionize the sample.
1) The energy range of ionization is large. f2) Only positive ions (high generation rate of negative ions); (3) No thermal decomposition of the sample as no heating vaporization is required; (4) Since the particles are neutral, there is no charge-up and even insulating materials can be easily ionized. It has many excellent features and is expected to continue to develop in the future.

本発明はこの提案方式1ζ基づくイオン源の改良Jζ関
するもので、ターゲットの中性粒子衝突面の近傍に補助
電極を配置し詰電極にターゲットと異なる電位を与える
こと暴ζより、ターゲットから発生したイオンが効率よ
く引出しスリットを通過して取出されるようになした点
iこ特徴を有している。
The present invention relates to the improvement of the ion source Jζ based on this proposed method 1ζ, in which an auxiliary electrode is arranged near the neutral particle collision surface of the target and a potential different from that of the target is applied to the neutral particle. It has this feature that allows ions to efficiently pass through the extraction slit and be extracted.

以下図面を用いて本発明を詳説する。The present invention will be explained in detail below using the drawings.

第1図は本発明の一実施例の構成を示す図であり、1は
中性粒子ビーム例えばム1原子ビームを生成するための
中性粒子源である。該粒子源はフィラメント2.カソー
ド3 、γノード4及び[Il5を備えたArイオン銃
6と、鱈イオン銃6から取出された高速度のArイオン
ビーム7を内部1【充満させたム1ガスSζ衝突させ速
度はそのtまでイオンから電荷だけを奪って中性化しA
r原子−こするための衝突室8と電鍍衝突室を出た高速
ム1原子ビーム中に混在するArイオンを偏向して取除
くための偏向器9から構成される。
FIG. 1 is a diagram showing the configuration of an embodiment of the present invention, and 1 is a neutral particle source for generating a neutral particle beam, for example, a mu1 atomic beam. The particle source is a filament 2. A high-velocity Ar ion beam 7 taken out from the cod ion gun 6 is collided with an Ar ion gun 6 equipped with a cathode 3, a γ node 4, and an Il5, and the velocity is t. Neutralize by removing only the charge from the ion until A
It consists of a collision chamber 8 for scraping r atoms, and a deflector 9 for deflecting and removing Ar ions mixed in the high-speed atomic beam exiting the electrostatic collision chamber.

上記中性粒子源11こおいて生成された高速Ar原子ビ
ーム10は切欠き部11を介してイオン化箱12内へ導
入され、該イオン化箱内へ後方から挿入されたターゲッ
ト15の原子ビーム10+こ対して傾斜が与えられtタ
ーゲット面に衝突スる。
The high-speed Ar atomic beam 10 generated in the neutral particle source 11 is introduced into the ionization box 12 through the notch 11, and the atomic beam 10+ of the target 15 inserted from the rear into the ionization box is An inclination is given to the target surface so that the target surface collides with the target surface.

該ターゲット16は例えば銅製で絶縁体14を介して導
入プローブ15の先端塵ζ取付ゆられると共1こ加速電
源16から例えば5に’TI程度の加速電圧vaが印加
されている。セして靜ターゲット13とイオン化箱12
0間iこは出力可変の正電源17又は負電源18がスイ
ッチ19によって選択的に接続される。20〜26はタ
ーゲット16から発生し化イオンを引出して加速するた
めのスリット電極群であり、加速電圧を分圧器24で分
圧して得た適宜な電圧が夫々印加されている。
The target 16 is made of copper, for example, and the tip of the introduction probe 15 is attached to it through an insulator 14, and an accelerating voltage va of about 'TI' is applied from an accelerating power source 16 to the target 5, for example. Set and silent target 13 and ionization box 12
Between 0 and 0, a variable output positive power supply 17 or negative power supply 18 is selectively connected by a switch 19. Reference numerals 20 to 26 represent a group of slit electrodes for extracting and accelerating ions generated from the target 16, and appropriate voltages obtained by dividing the acceleration voltage by a voltage divider 24 are applied to each group.

斯かる構成iこおいて、イオン銃6I【おいてイオン化
され数KVの高電圧で高速1こ加速されたArイオンは
、衝突室8においてム、ガス(Ar原子)に衝突して電
荷のみを失い高速度のム1原子ビームiこ変換される。
In this configuration, Ar ions ionized in the ion gun 6I and accelerated at high speed with a high voltage of several KV collide with the gas (Ar atoms) in the collision chamber 8, releasing only electric charge. A high-velocity mu1 atomic beam is converted into a beam.

そして該衝突室8から取出された高速Ar原子ビーム1
0は前記スリット電甑群21〜26と略平行Jζ進行し
、その進行方向≦こ対して20″′〜456程度の傾斜
が与えられたターゲツト面に衝突するが、その衝突面一
【は例えばグリセリンと被検物質を混合させて調製した
試料が塗布されており、高速Ar原子の衝突盛こよって
被検物質がイオン化されて表面から飛び出す。この様l
こして生成されたイオンはスリット電極群lζよって引
出されて加速され質量分析部へ導かれるが、本発明者は
この時イオン化箱12の電位をターゲットiAtこ対し
て数V乃至数107高めるか低めることiこよってスリ
ット電極を介して取出すことのできるイオン量を桁違い
に増加させ得ることを見出した。これは以下のよう表理
由によるものと推測さnる。
The high-speed Ar atomic beam 1 taken out from the collision chamber 8
0 travels approximately parallel Jζ to the slit electrode groups 21 to 26 and collides with a target surface that is inclined at an angle of about 20'' to 456 with respect to the direction of travel. A sample prepared by mixing glycerin and a test substance is coated, and the test substance is ionized and ejected from the surface due to collisions with high-speed Ar atoms.
The ions thus generated are extracted by the slit electrode group lζ, accelerated, and guided to the mass spectrometer. At this time, the inventor raises or lowers the potential of the ionization box 12 by several V to several 107 points relative to the target iAt. In particular, it has been found that the amount of ions that can be taken out through the slit electrode can be increased by an order of magnitude. This is presumed to be due to the following reasons.

即ちターゲツト面上Iこ塗布された試料の表面は滑らか
h平面ではあり得す、複雑な形状で優り上がっていたり
凹凸が、あるため、表面から発生するイオンは特定の方
向−こ向けて多く他の方向1ζは少ないというようIC
方向性を持つことが頻繁に起こる。又原子ビーム照射点
とスリットとの位置関係その他の理由Iこよってもイオ
ンが方向性を強く持って発生することが起こる。このイ
オンの多く発生する方向が@2図(a)lζ示す様−ζ
スリットの方向であれば問題はないが実際I【はそのよ
うなことは少なく、第g 園(bl 、 letに示す
Ilにスリットから外れ取出すことのできるイ才)の量
が極めて少なくなってしまうことが殆んどである。そこ
でイオン化箱12の電位をターゲット電位1こ対して数
V乃至数10v異ならせることによりイオン化箱とター
ゲットとの間にイオンの引出し方向−ζ対して直角方向
(矢印E方向)の′#Lrf−を生成させ、その電界に
より第2図fb) 、 (cl rζおける方向工をス
リット方向へ向けて曲げれば大量のイオンを取出すこと
ができる。
In other words, the surface of the sample coated on the target surface may be a smooth flat surface, but it may have a complex shape with uneven surfaces or uneven surfaces, so ions generated from the surface may be directed in a specific direction or in many other directions. IC such that direction 1ζ of is small
Having direction often happens. Also, ions may be generated with strong directionality due to the positional relationship between the atomic beam irradiation point and the slit and other reasons. The direction in which many of these ions are generated is as shown in Figure 2 (a) lζ -ζ
There is no problem if it is in the direction of the slit, but in reality, this is rarely the case, and the amount of the material that can be removed from the slit and removed from the slit is extremely small. Most of the time. Therefore, by varying the potential of the ionization box 12 by several volts to several tens of volts with respect to the target potential, a gap between the ionization box and the target in the direction perpendicular to the ion extraction direction -ζ (direction of arrow E) '#Lrf- A large amount of ions can be taken out by generating the electric field and bending the direction in the direction of the slit in the direction of the slit.

その際イオンの偏向に関与しているのは傾斜が与えられ
ているターゲツト面と該ターゲツト面iこ面しているイ
オン化箱の部分との間−ζ形成される電界が主であると
思われ、第2図(blの場合は正電源17t−接続して
イオン化箱12の電位をターゲット電位よりも高くする
ことによりターゲットから発生した正イオンを下の方向
へ偏向し、同図telの場合は逆1こ負電源18t−接
続してターゲットから発生した正イオンを上方へ偏向す
る必要がある。
In this case, it is thought that the main factor involved in the deflection of ions is the electric field formed between the inclined target surface and the part of the ionization box facing the target surface. , Figure 2 (In the case of BL, the positive ions generated from the target are deflected downward by connecting the positive power supply 17t to make the potential of the ionization box 12 higher than the target potential, and in the case of tel in the same figure, It is necessary to connect an inverse 1 negative power source 18t to deflect the positive ions generated from the target upward.

この様に蝿向盛こ関与しているのがイオン化箱のターゲ
ツト面に面して−る部分であることから、イオン化箱が
存在しないような場合−こはターゲツト面の近傍遥こ轄
ターゲット面iこ対向させて補助電極を配置し、該捕助
電q7AIこターゲットと異なった電位を与えることが
できるようにすれば良い。
In this way, since it is the part of the ionization box facing the target surface that is involved in the fly direction, in the case where there is no ionization box, this is the case when the target surface is near or far from the target surface. The auxiliary electrodes may be arranged to face each other so that the auxiliary electrode q7AI can be given a potential different from that of the target.

尚上述した実施例では原子ビーム照射lこより発生しt
イオンのうち正イオンを取出すようdこしたが〜負イオ
ンについても各電極6ζ供給する電圧の極性を考慮する
だけで全く同様I【取出すことができることは言うまで
もない。
In the above-mentioned embodiment, the atomic beam irradiation generates t.
Although we tried to extract positive ions among the ions, it goes without saying that negative ions can also be extracted in exactly the same way by simply considering the polarity of the voltage supplied to each electrode.

以上詳述した如く本発明5こよれば補助電極を配置する
簡単な構成でイオンを効率よく取出す仁とがてきる。又
第1図の実總例では補助電極としてイオン化箱を利用し
ているので持重ζ構成が簡単となる。
As detailed above, according to the present invention, ions can be extracted efficiently with a simple configuration in which auxiliary electrodes are arranged. Further, in the actual example shown in FIG. 1, an ionization box is used as an auxiliary electrode, so the structure of the holding weight ζ is simplified.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実陶例の構成を示す図であり、第2
図はイオンの方向性を説明するための図である。 1:中性粒子源、2:フィラメント、3:カソード、4
ニアノード、5:電極、6:ム、イオン銃、7:ム1イ
オンビーム、8:衝突室、9:ll向器、10:高速ム
1原子ビーム、11:切欠1部% 12:イオン化箱、
13:ターゲット、14:絶縁体、16:加速電源、1
7:正電源、18:負電源、19:スイッチ、20〜2
5ニスリツト電極。 Ar力゛ス 門 一〒[ 」I 工l [ 二=コ 199− zO 20
FIG. 1 is a diagram showing the configuration of one example of the ceramic according to the present invention, and the second
The figure is a diagram for explaining the directionality of ions. 1: Neutral particle source, 2: Filament, 3: Cathode, 4
Near node, 5: Electrode, 6: Mu, ion gun, 7: Mu1 ion beam, 8: Collision chamber, 9: II direction device, 10: High speed Mu1 atomic beam, 11: Notch 1% 12: Ionization box,
13: target, 14: insulator, 16: acceleration power supply, 1
7: Positive power supply, 18: Negative power supply, 19: Switch, 20-2
5 Nisrit electrode. Ar force gate 1 [ '' I engineering 1 [ 2=ko 199-zO 20

Claims (1)

【特許請求の範囲】 L ターゲット1薯ζ保持された試料に高速度di与え
られた中性粒子を衝突させてイオン化し、発生したイオ
ンを引出しスリットを介して取出して加速するイオン源
において、前記夕=ゲットの中性粒子衝突面の近傍に補
助電4Iit−配置し、該電極1ζ前記ターゲツトと異
なる電位を与えるよう感こ構成したことを特徴とするイ
オン源。 λ 前記ターゲットを収容するイオン化箱f:1Ill
記補助電極として用いた特許請求の範囲第1項記載のイ
オン源。
[Scope of Claims] An ion source in which neutral particles applied at a high velocity di collide with a sample held at L target 1 ζ to ionize the sample, and the generated ions are taken out and accelerated through an extraction slit. An ion source characterized in that an auxiliary electrode (4Iit) is disposed near a neutral particle collision surface of a target, and the electrode (1ζ) is configured to apply a potential different from that of the target. λ Ionization box f that accommodates the target: 1Ill
The ion source according to claim 1, which is used as the auxiliary electrode.
JP56163321A 1981-10-13 1981-10-13 ion source Expired JPS5836463B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56163321A JPS5836463B2 (en) 1981-10-13 1981-10-13 ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56163321A JPS5836463B2 (en) 1981-10-13 1981-10-13 ion source

Publications (2)

Publication Number Publication Date
JPS5864745A true JPS5864745A (en) 1983-04-18
JPS5836463B2 JPS5836463B2 (en) 1983-08-09

Family

ID=15771614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56163321A Expired JPS5836463B2 (en) 1981-10-13 1981-10-13 ion source

Country Status (1)

Country Link
JP (1) JPS5836463B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013021923A1 (en) * 2011-08-08 2013-02-14 株式会社パスカル Analysis device and analysis method by secondary ions employing atomic probe

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6082333U (en) * 1983-11-02 1985-06-07 アルプス電気株式会社 input device
JPS6488619A (en) * 1987-09-29 1989-04-03 Matsushita Electric Ind Co Ltd Coordinate input device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013021923A1 (en) * 2011-08-08 2013-02-14 株式会社パスカル Analysis device and analysis method by secondary ions employing atomic probe
JP2013037894A (en) * 2011-08-08 2013-02-21 Pascal:Kk Analyzer by secondary ion using atomic probe and analytical method

Also Published As

Publication number Publication date
JPS5836463B2 (en) 1983-08-09

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