JPS586440U - MOSFET drive circuit - Google Patents

MOSFET drive circuit

Info

Publication number
JPS586440U
JPS586440U JP9926081U JP9926081U JPS586440U JP S586440 U JPS586440 U JP S586440U JP 9926081 U JP9926081 U JP 9926081U JP 9926081 U JP9926081 U JP 9926081U JP S586440 U JPS586440 U JP S586440U
Authority
JP
Japan
Prior art keywords
transistor
drive circuit
gate
diode
transformer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9926081U
Other languages
Japanese (ja)
Inventor
真悟 大野
Original Assignee
ボルテツク株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ボルテツク株式会社 filed Critical ボルテツク株式会社
Priority to JP9926081U priority Critical patent/JPS586440U/en
Publication of JPS586440U publication Critical patent/JPS586440U/en
Pending legal-status Critical Current

Links

Landscapes

  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のMO3FET駆動回路、第2図は本案M
O3FET駆動回路である。 符号、R,R1,R2,R3・・・・・・抵抗、DI。 Dz・・・・・・ダイオード、Dz・・・・・・ツェナ
ーダイオード、Q・・・・・・従来回路のトランジスタ
(Nチャンネル)、Ql・・・・・・トランジスタ(P
MP)、Q2・・・・・・トランジスタ(Nチャンネル
)、B・・・・・・トランジスタQlのベース、E・・
・・・・エミッター、C・・・・・・コレクター。  
Figure 1 shows the conventional MO3FET drive circuit, Figure 2 shows the proposed M
This is an O3FET drive circuit. Code, R, R1, R2, R3...Resistance, DI. Dz...Diode, Dz...Zener diode, Q...Conventional circuit transistor (N channel), Ql...Transistor (P
MP), Q2...Transistor (N channel), B...Base of transistor Ql, E...
...Emitter, C...Collector.
.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] パルス幅制御回路、絶縁用パルストランスドライブ回路
、パルストランス、インバータトランス、抵抗R1,R
2,R3、ダイオードDI、D2、ツェナーダイオード
Dz、 )ランジスタQ 1 (PNP)及び、トラン
ジスタQ2(Nチャンネル)から成り、上記パルストラ
ンスの正極を、直列接続させた抵抗R1、ダイオードD
1を通りトランジスタQ2のゲートに接続すると共に、
抵抗R2を通ってトランジスタQ1のベースBに接続し
、該トランジスタQ1のベースB1エミッター8間にダ
イオードD2を接続し、該エミッターEをトランジスタ
Q2のゲートに接続し、該トランジスタQ2のゲート、
ソース間にそれぞれツェナーダイオードDz、抵抗R3
を接続し、また、パルストランスの負極及びトランジス
タQ1のコレクターCをそれぞれトランジスタQ2のソ
ースに接続し、該トランジスタQ2のドレインをインバ
ータトランスに接続して構成して、MO3FET駆動回
路。
Pulse width control circuit, insulating pulse transformer drive circuit, pulse transformer, inverter transformer, resistors R1, R
2, R3, diode DI;
1 and connected to the gate of transistor Q2,
connected to the base B of the transistor Q1 through a resistor R2, a diode D2 is connected between the base B1 emitter 8 of the transistor Q1, the emitter E is connected to the gate of the transistor Q2, the gate of the transistor Q2;
A Zener diode Dz and a resistor R3 are connected between the sources.
Further, the negative electrode of the pulse transformer and the collector C of the transistor Q1 are respectively connected to the source of the transistor Q2, and the drain of the transistor Q2 is connected to the inverter transformer.
JP9926081U 1981-07-03 1981-07-03 MOSFET drive circuit Pending JPS586440U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9926081U JPS586440U (en) 1981-07-03 1981-07-03 MOSFET drive circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9926081U JPS586440U (en) 1981-07-03 1981-07-03 MOSFET drive circuit

Publications (1)

Publication Number Publication Date
JPS586440U true JPS586440U (en) 1983-01-17

Family

ID=29894001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9926081U Pending JPS586440U (en) 1981-07-03 1981-07-03 MOSFET drive circuit

Country Status (1)

Country Link
JP (1) JPS586440U (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200066A (en) * 1983-04-27 1984-11-13 Aisin Seiki Co Ltd High voltage generating circuit of car ignition system
JPS6082987U (en) * 1983-11-10 1985-06-08 株式会社明電舎 Control circuit for switching DC power supply
JPS61206327U (en) * 1985-06-12 1986-12-26
EP0299088A1 (en) * 1987-01-29 1989-01-18 Fanuc Ltd. Pre-drive circuit
JPH01131290U (en) * 1988-02-25 1989-09-06
JP2007068359A (en) * 2005-09-01 2007-03-15 Fuji Electric Device Technology Co Ltd Power conversion apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551756A (en) * 1978-06-19 1980-01-08 Nippon Telegr & Teleph Corp <Ntt> Drive circuit for field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551756A (en) * 1978-06-19 1980-01-08 Nippon Telegr & Teleph Corp <Ntt> Drive circuit for field effect transistor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200066A (en) * 1983-04-27 1984-11-13 Aisin Seiki Co Ltd High voltage generating circuit of car ignition system
JPS6082987U (en) * 1983-11-10 1985-06-08 株式会社明電舎 Control circuit for switching DC power supply
JPS61206327U (en) * 1985-06-12 1986-12-26
EP0299088A1 (en) * 1987-01-29 1989-01-18 Fanuc Ltd. Pre-drive circuit
EP0299088B1 (en) * 1987-01-29 1994-04-13 Fanuc Ltd. Pre-drive circuit
JPH01131290U (en) * 1988-02-25 1989-09-06
JP2007068359A (en) * 2005-09-01 2007-03-15 Fuji Electric Device Technology Co Ltd Power conversion apparatus

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