JPS5864021A - Manufacturing device for continuously film - Google Patents

Manufacturing device for continuously film

Info

Publication number
JPS5864021A
JPS5864021A JP16271281A JP16271281A JPS5864021A JP S5864021 A JPS5864021 A JP S5864021A JP 16271281 A JP16271281 A JP 16271281A JP 16271281 A JP16271281 A JP 16271281A JP S5864021 A JPS5864021 A JP S5864021A
Authority
JP
Japan
Prior art keywords
film forming
film
shutter
control signal
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16271281A
Other languages
Japanese (ja)
Other versions
JPS629213B2 (en
Inventor
Hideki Tateishi
秀樹 立石
Tamotsu Shimizu
保 清水
Susumu Aiuchi
進 相内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16271281A priority Critical patent/JPS5864021A/en
Publication of JPS5864021A publication Critical patent/JPS5864021A/en
Publication of JPS629213B2 publication Critical patent/JPS629213B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To enhance the availability factor of a film manufacturing device by a method wherein a film forming speed measuring means is made to operate at every set number of sheet of substrates according to a measuring time instruction means, a control signal generating means and a shutter. CONSTITUTION:When a film is to be manufactured on a substrate 9 of the first sheet, a shutter 10 is made to perform opening action according to a switching signal e, and because a film forming speed measuring means 6 functions, a film manufacturing material is adhered to the substrate from a film manufacturing means 5, while a measured value of film forming speed is sent to a control signal generating means 7, a control signal b is sent to an electric power source 8 according to the compared value of the measured value and a set value, electric power c is sent out, and is controlled as to coincide with the set value. After the thin film is formed on the substrate 9, the shutter 10 is operated to close according to the switching signal (e), and the film forming speed measuring means 6 is covered with the shutter 10. Every time when the substrate is conveyed out from a gate valve 3, a measuring time instruction means 11 perform counting, and the counted value thereof is sent to a setting device to be compared with the set value, and when the number of sheets reached the set value, a measurement instruction signal (d) is outputted to send out the switching signal (e), and after the shutter 10 is made to perform opening operation again for the prescribed hours, the film forming speed measuring means 6 is covered again.

Description

【発明の詳細な説明】 本発明線、IC,FAXなどの薄膜機能素子の基1板に
薄膜を形成する連続製膜装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a continuous film forming apparatus for forming a thin film on a single substrate of a thin film functional element such as a wire, IC, or FAX.

本発明に対して最も近い従来技術の一例を第1図に示す
An example of the prior art closest to the present invention is shown in FIG.

この図に示される従来の製膜装置は、処理室1、骸処理
室1の一方の側壁と他方の側壁とに設けられた基板搬入
用のr−トパルf2と基板搬送用のダートパルプ3.処
理室1内の製膜位置に対向する位置に取付けられた製膜
手段5、処理室1の内部に配置された基板の搬送手段4
と成膜速度測定手段6、処理室1の外部に配置された制
御信号発生手段7と電源8とを有している。
The conventional film forming apparatus shown in this figure includes a processing chamber 1, an r-topal f2 for carrying in substrates, and a dart pulp 3 for carrying substrates, which are provided on one side wall and the other side wall of the carcass processing chamber 1. A film forming means 5 installed at a position opposite to the film forming position in the processing chamber 1, and a substrate conveying means 4 arranged inside the processing chamber 1.
, a film forming rate measuring means 6 , a control signal generating means 7 disposed outside the processing chamber 1 , and a power source 8 .

そして、前記製膜装置では処理室1内は真空に保たれて
おり、y−トパルプ2を通じて搬送手段4上に処理すべ
き基板9が載置され、該基板9は搬送手段4により処理
室1内の製膜位置まで搬送され、基板9に製膜手段5か
ら飛び出す製膜材料(図示省略)が付着される。
In the film forming apparatus, the inside of the processing chamber 1 is kept in a vacuum, and a substrate 9 to be processed is placed on the transport means 4 through the y-topulp 2. The substrate 9 is transported to a film forming position within the substrate 9, and the film forming material (not shown) that jumps out from the film forming means 5 is attached to the substrate 9.

この成膜過程で、成膜速度測定手段6により成膜速度が
測定され、その測定値aは制御信号発生手段7に送シ込
まれ、該制御信号発生手段7において成膜速度測定手段
6から送られてくる成膜速度の測定値1と設定値とが比
較され、その比較値に基づき制御信号発生手段7から電
源8に制御信号すが送られ、ついで制御信号bK基づい
て電源8から製膜手段5へ成膜速度と設定値とが一致・
するように電力Cが印加され、製膜手段5から基板9上
に製膜材料が供給され、薄膜が形成される。
During this film forming process, the film forming rate is measured by the film forming rate measuring means 6, and the measured value a is sent to the control signal generating means 7. The measured value 1 of the film forming speed that is sent is compared with the set value, and based on the comparison value, a control signal is sent from the control signal generating means 7 to the power source 8, and then, based on the control signal bK, the power source 8 controls the film forming speed. If the film forming speed and set value match the film means 5,
Electric power C is applied so that a film forming material is supplied from the film forming means 5 onto the substrate 9, and a thin film is formed.

薄膜が形成された基板は、搬送手段4により搬送され、
基板搬出用のダートパルゾ3を通じて取り出され、次工
程に送られる。
The substrate on which the thin film is formed is transported by the transport means 4,
It is taken out through the Dart Palzo 3 for carrying out the substrate and sent to the next process.

゛前記成膜速度測定手段6には、一般に水晶振動子式セ
ンサが用いられる。この水晶振動子式センサは、振動子
に付着する膜の厚さにより振動子の共振周波数が変化す
る性質を利用したものであり、振動子に付着する膜厚が
ある一定値に達すると測定不能となシ、振動子を交換す
る必要がある。この振動子の測定可能回数は極めて少な
く、基板を1枚ずつ製膜手段5に対向させて製膜する1
枚製漢方式では振動子の交換頻度が多くなる。
``A crystal resonator type sensor is generally used as the film forming rate measuring means 6. This crystal oscillator sensor utilizes the property that the resonant frequency of the oscillator changes depending on the thickness of the film attached to the oscillator, and once the thickness of the film attached to the oscillator reaches a certain value, measurement becomes impossible. Unfortunately, the vibrator needs to be replaced. The number of times this vibrator can be measured is extremely small, and the film is formed by facing the film forming means 5 one by one.
In the single sheet manufacturing method, the vibrator must be replaced more frequently.

また、処理室1は真空に保たれているが、振動子を交換
するため処理室1を大気圧にした後、再び元の状態の真
空にするには通常数時間と長い時間を要する。
Furthermore, although the processing chamber 1 is kept in a vacuum, it usually takes a long time, several hours, to return the processing chamber 1 to the original vacuum after the processing chamber 1 is brought to atmospheric pressure in order to replace the vibrator.

したがって、従来の1枚製膜装置で連続的に製膜を行う
場合には、振動子の交換による装置の休止時間が長くな
り、製膜装置の稼動率が著しく低下する欠点があシ、ま
た処理室1の真空の質を再現性よく実現することがむず
かしく、真空の質に敏感に影響される膜質に影響を与え
る結果、製品の歩留りが低下する欠点があった。− 前述の製膜装置とは別のパッチ式、すなわち多数枚基板
を一括して処理室に収納して製膜を行うパッチ処理方式
においては、振動子の利用回数を多くする丸め、製膜手
段から振動子までの距離を、製膜手段から基板までの距
離に比べて大きくしている。このため、基板に付着する
製膜材料の量に比べて振動子に付着する製膜材料の量が
少なく、したがって成膜速度の測定精度が低下し、ひい
ては製品の歩留)が低下する欠点があった。
Therefore, when continuously forming films using a conventional single-layer film forming apparatus, there is a disadvantage that the down time of the apparatus due to the replacement of the vibrator is long, and the operation rate of the film forming apparatus is significantly reduced. It is difficult to realize the quality of the vacuum in the processing chamber 1 with good reproducibility, and as a result, the quality of the film, which is sensitively affected by the quality of the vacuum, is affected, resulting in a reduction in product yield. - In the patch processing method, which is different from the above-mentioned film forming apparatus, in which a large number of substrates are stored in a processing chamber at once and film formed, rounding and film forming means that increase the number of times the vibrator is used are used. The distance from the oscillator to the oscillator is made larger than the distance from the film forming means to the substrate. For this reason, the amount of film-forming material that adheres to the vibrator is smaller than the amount of film-forming material that adheres to the substrate, which reduces the measurement accuracy of the film-forming rate and ultimately reduces the product yield. there were.

本発明の目的は、前記従来技術の欠点をなくし、製膜装
置の稼動率を向上でき、かつ製品の歩留りを向上させう
る連続製膜装置を提供するkある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a continuous film forming apparatus which can eliminate the drawbacks of the prior art, improve the operating rate of the film forming apparatus, and improve the yield of products.

本発明の特徴は、処理室内に設けられた製膜手段と成膜
速度測定手段との間にシャッタを配置し、処理室外には
測定時期指令手段を設置するとともに、該測定時期指令
手段を制御信号発生手段に接続し、制御信号発生手段を
通じて前記シャッタに、設定枚数成膜後に開閉信号を送
るように構成したところKTot)、この構成によシ前
記目的を全て達成することができたものである。
A feature of the present invention is that a shutter is disposed between the film forming means and the film forming rate measuring means provided inside the processing chamber, and a measurement timing command means is installed outside the processing chamber, and the measurement timing command means is controlled. It was configured such that it was connected to a signal generating means and sent an opening/closing signal to the shutter through the control signal generating means after a set number of films were deposited (KTot), and with this configuration, all of the above objectives could be achieved. be.

以下、゛本発明を図面に基づいて説明する。Hereinafter, the present invention will be explained based on the drawings.

第2図は、本発明の一実施例を示すもので、処理室1、
その一方の側壁と他方の側壁とに設けられた基板搬入用
のy−トパルゾ2と基板搬出用のr++)、4ルデ3、
処理室1内に配置された搬送手段4、処理室1内の製膜
位置に対向する位置に取り付けられた製膜手段5、処理
室1内の製膜位置とほぼ同じレベルに配置された成膜速
度測定手段6、処理室1の外部に設置された制御信号発
生手段7.これに接続された電源8とを備えている。
FIG. 2 shows an embodiment of the present invention, in which a processing chamber 1,
y-topalzo 2 for carrying in substrates and r++ for carrying out substrates provided on one side wall and the other side wall, 4 Rude 3,
A transport means 4 disposed within the processing chamber 1, a film forming means 5 mounted at a position opposite to the film forming position within the processing chamber 1, and a film forming means disposed at approximately the same level as the film forming position within the processing chamber 1. Membrane speed measuring means 6, control signal generating means 7 installed outside the processing chamber 1. A power source 8 connected thereto is provided.

前記処理室1の内部は真空に保たれており、薄膜を付着
、形成すべき基板9はr−トパルプ2を通じて処理室1
内に送られ、搬送手段4上に載置され、製膜位置に搬送
され、この位置で基板9上に製膜手段5から供給される
製膜材料が付着される。
The inside of the processing chamber 1 is kept in vacuum, and the substrate 9 to which a thin film is to be attached and formed is passed through the r-topulp 2 into the processing chamber 1.
The film-forming material supplied from the film-forming means 5 is deposited on the substrate 9 at this position.

との成膜過程で、成膜速度測定手段6によシ成膜速度が
測定され、その測定値1は制御信号発生手段7に送られ
る。制御信号発生手段7では前記測定値1と設定値とを
比較し、この比較値に基づいて電源8に制御信号すが送
られる。
During the film forming process, the film forming speed is measured by the film forming speed measuring means 6, and the measured value 1 is sent to the control signal generating means 7. The control signal generating means 7 compares the measured value 1 with a set value, and sends a control signal to the power source 8 based on this comparison value.

ついで、電源8から製膜手段5に、成膜速度が設定値に
一括するように電力Cが印加され、電力e4C対応して
製膜手段5から製膜材料が供給され、基板9上に薄膜が
付着、形成される。
Next, power C is applied from the power supply 8 to the film forming means 5 so that the film forming speed reaches the set value, and the film forming material is supplied from the film forming means 5 in response to the electric power e4C, and a thin film is formed on the substrate 9. is attached and formed.

所定厚さの薄膜が形成された基板状、搬送手段4によシ
?−)パルf3方向に搬送され、該r−トパルプ3から
取シ出され1次工程に送付される〇本発明は、前述の、
ごとき製膜装置において、前記製膜手段5と成膜速度測
定手段6間にシャツタ10が配置され、処理室1の外部
には測定時期指令手段11が設置され、骸測定時期指令
手段11は前記制御信号発生手段7に測定指示信号dを
送るように接続され、またシャッタ10は同制御信号発
生手段7から開閉信号・を受けて作動するように接続さ
れているところに特徴を有する。
A substrate on which a thin film of a predetermined thickness is formed is transferred to the conveying means 4? -) The pulp is transported in the direction of the r-to pulp 3, taken out from the r-to pulp 3, and sent to the primary process.
In a film forming apparatus such as the above, a shutter 10 is disposed between the film forming means 5 and the film forming rate measuring means 6, and a measurement timing command means 11 is installed outside the processing chamber 1. The shutter 10 is characterized in that it is connected to send a measurement instruction signal d to the control signal generating means 7, and the shutter 10 is connected so as to operate upon receiving an opening/closing signal from the control signal generating means 7.

前記測定時期指令手段11は、枚数設定器とカウンタと
比較器とを含み1枚数設定器により任意の枚数を設定し
、その設定値を比較器に挿入する一方、カウンタにより
処理室1の基板搬出用のダートパルプ3から薄膜が形成
された基板が1枚搬出されるととに計数して比較器に送
シ、比較器によシ設定値と搬出された基板の枚数とを比
較し、搬出された基板の枚数が設定値に達したときに、
制御信号発生手段7に測定指示信号゛dを送るように構
成されている・ 前記シャッタ10は、測定時期指令手段11からの測定
指示信号dに基づいて制御信号発生手段7から送られて
くる開閉信号・によシ一定時間、開操作されるようKな
っている・ 前記実施例の連続製膜装置は、次のように動作する。
The measurement timing command means 11 includes a sheet number setting device, a counter, and a comparator, and sets an arbitrary number of sheets with the sheet number setting device, and inserts the set value into the comparator. When one substrate on which a thin film has been formed is carried out from the dirt pulp 3 for use, it is counted and sent to a comparator, and the comparator compares the set value with the number of substrates carried out. When the number of printed boards reaches the set value,
The shutter 10 is configured to send a measurement instruction signal d to the control signal generation means 7. The shutter 10 is opened/closed based on the measurement instruction signal d sent from the measurement timing instruction means 11. The continuous film forming apparatus of the above embodiment operates as follows.

すρわ、ち、製膜tべき1枚目の基板9に製膜する際、
制御信号発生手段7からの開閉信号・によシシャツタ1
0を開動作させ、成膜速度測定手段6が機能するように
開放する。
When forming a film on the first substrate 9,
Opening/closing signal from control signal generating means 7/Yoshishita shutter 1
0 is opened so that the film forming rate measuring means 6 functions.

次に、製膜手段5から基板9上に製膜材料を供給し、製
膜材料を付着させるとともに、成膜速度測定手段6によ
シ成膜速度を測定し、前述のごとく測定値を制御信号発
生手段7に送シ、制御信号発生手段7で測定値と設定値
とを比較し、その比較値に基づき、制御信号発生手段7
から電源8に制御声号すが送られ、制御信号すに基づい
て製膜手段5に電力・が送られ、成膜速度が設定値と一
致するように制御される。
Next, a film-forming material is supplied from the film-forming means 5 onto the substrate 9, and the film-forming material is deposited thereon, and the film-forming speed is measured by the film-forming speed measuring means 6, and the measured value is controlled as described above. The control signal generating means 7 compares the measured value and the set value, and based on the comparison value, the control signal generating means 7 sends a signal to the signal generating means 7.
A control signal is sent from the power supply 8 to the power supply 8, and based on the control signal, power is sent to the film forming means 5, and the film forming speed is controlled so as to match the set value.

一定時間経過後、すなわち少なくとも1枚の基板9に薄
膜が施される時間の経過後、制御信号発生手段7からの
開閉信号・によシシャツタ10が閉操作され、成膜速度
測定手段6は製膜材料が付着しないようにシャッタ10
によりカバーされる。
After a certain period of time has elapsed, that is, after a thin film has been applied to at least one substrate 9, an opening/closing signal is sent from the control signal generating means 7, the shutter shutter 10 is closed, and the film forming rate measuring means 6 is activated. Shutter 10 to prevent film material from adhering.
covered by

ついで、薄膜が形成された基板が基板搬出用のr−)パ
ルプ3から搬出されるごとに測定時期指令手段11のカ
ウンタで計数し、その計数値lを設定器に送シ、設定器
で予め設定された設定値と比較し、前記ゲートパルf3
から搬出された基板の枚数が設定値に達したときに、測
定時期指令手段11から制御信号発生手段7に測定指示
信号dが送られ、前述のごとく制御信号発生手段7から
シャッタ10に開閉信号・が送られ、シャッタ10が再
び一定時間、開操作され、成膜速度測定手段6が作用し
、一定時間経過後、シャッタ10が閉じられ、成膜速度
測定手段6は再びカバーされる。
Next, each time the substrate on which the thin film has been formed is carried out from the r-) pulp 3 for carrying out the substrate, it is counted by the counter of the measurement timing command means 11, and the counted value l is sent to the setting device. The gate pulse f3 is compared with the set value.
When the number of substrates carried out from the board reaches the set value, the measurement instruction signal d is sent from the measurement timing command means 11 to the control signal generation means 7, and as described above, the control signal generation means 7 issues an opening/closing signal to the shutter 10. is sent, the shutter 10 is opened again for a certain period of time, the film forming rate measuring means 6 is activated, and after the certain period of time has elapsed, the shutter 10 is closed and the film forming rate measuring means 6 is covered again.

そして、以上の動作が基板9の設定枚数ごとに繰シ返し
行われ、その都度成膜速度が測定される。
The above operation is repeated for each set number of substrates 9, and the film formation rate is measured each time.

したがって、成膜速度測定手段6は例えば(資)枚等、
基板9を設定枚数製膜処理ととに開放されて作用し、非
作用時にはシャッタ10でカバーされるので、成膜速度
測定手段6の交換必要時までの基板9の製膜処理枚数を
飛躍的に増大させることができる。
Therefore, the film forming rate measuring means 6 is, for example, a (material) sheet, etc.
Since the substrate 9 is opened and operated during the film forming process for a set number of substrates, and is covered by the shutter 10 when not in operation, the number of substrates 9 processed until the film forming rate measuring means 6 needs to be replaced can be dramatically reduced. can be increased to

なお、他の構成1作用社、第1図について説明したとこ
ろと同様である。
Note that the other configurations are the same as those described with respect to FIG. 1.

また、前述の実施例は成膜速度が一定となるように、電
力に対して帰還制御する場合について説明したが、これ
に限らず、製膜時間を制御する時間制御方式のものKも
適用できる〇 本発明は1以上説明した構成1作用のもので、測定時期
指令手段と制御信号発生手段とシャッタとの連係によシ
、基板め設定枚数ごとに成膜速度測定手段を作用させ、
非作用時には製膜材料が付着しないようにシャッタでカ
バーされるので、成膜速度測定手段の交換必要時までの
基板の製膜処理枚数を大幅に増大させうる結果、製膜装
置の稼動率を著しく向上できる効果を有する外、処理室
の真空から大気圧に変わる回数を減少させうるので、真
空の質を安定に維持することができること。
Further, in the above embodiment, a case where feedback control is applied to the electric power so that the film forming rate is constant has been explained, but this is not limited to this, and a time control type K that controls the film forming time can also be applied. 〇The present invention has the above-described configuration 1, in which the film forming rate measuring means is activated for each set number of substrates by the cooperation of the measurement timing command means, the control signal generating means, and the shutter,
Since the shutter covers the film forming material to prevent it from adhering when it is not in operation, the number of substrates to be processed before the film forming rate measuring means needs to be replaced can be greatly increased, resulting in a reduction in the operation rate of the film forming equipment. In addition to significantly improving the effect, the quality of vacuum can be maintained stably by reducing the number of times the process chamber changes from vacuum to atmospheric pressure.

および成膜速度測定手段を基板への製膜位置とほぼ同じ
レベルに配置できるので、測定精度が向上することとが
相俟ち、製品の歩留シを向上できる効果もある。
In addition, since the film-forming rate measuring means can be placed at approximately the same level as the film-forming position on the substrate, measurement accuracy is improved, and the yield of products can also be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の製膜装置のブロック図、第2図は本発明
装置の一実施例を示すブロック図である。 1・・・処理室、4・・・基板の製膜手段、5・・・製
膜手段、6・・・成膜速度測定手段、7・・・制御信号
発生子゛段、8・・・電源、9・・・基板%10・・・
シャッタ、11・・・測定時期指令手段、a・・・成膜
速度の測定値、b・・・電源の制御信号、C・・・電力
、d・・・測定指示信号、・・・・シャッタの開閉信号
。 代理人 弁理士 秋 本 正 夾 第1図 第2図
FIG. 1 is a block diagram of a conventional film forming apparatus, and FIG. 2 is a block diagram showing an embodiment of the apparatus of the present invention. DESCRIPTION OF SYMBOLS 1... Processing chamber, 4... Substrate film forming means, 5... Film forming means, 6... Film forming rate measuring means, 7... Control signal generator stage, 8... Power supply, 9... Board% 10...
Shutter, 11...Measurement timing command means, a...Measurement value of film formation rate, b...Control signal of power supply, C...Electric power, d...Measurement instruction signal,...Shutter open/close signal. Agent Patent Attorney Seikyo AkimotoFigure 1Figure 2

Claims (1)

【特許請求の範囲】[Claims] 真空に保たれている処理室内に順次基板を搬入し、電源
に連続された製膜手段によシ前記基板上に製膜材料を供
給して付着させ、成膜速度測定手段によシ成膜速度を測
定し、その測定値を制御信号発生手段に送シ、前記測定
された成膜速度に基づき制御信号発生手段から前記電源
に制御信号を送って成膜速度を制御し、薄膜が形成され
た基板を処理室から次々に搬出する型式の製膜装置にお
いて、前記処理室内に設けられた製膜手段と成膜速度測
定手段との間にシャッタを配置し、処理室外には測定時
期指令手段を設置するとともに、該測定時期指令手段を
前記制御信号発生手段に接続し、制御信号発生手段を通
じて前記シャッタに、設定枚数成膜後に開閉信号を送る
ように構成したことを特徴とする連続製膜装置。
The substrates are sequentially carried into a processing chamber kept in a vacuum, and a film forming means connected to a power source supplies and deposits a film forming material onto the substrate, and a film forming rate measuring means is used to form a film. The speed is measured, the measured value is sent to a control signal generating means, and the film forming speed is controlled by sending a control signal from the control signal generating means to the power source based on the measured film forming speed, so that a thin film is formed. In a film forming apparatus of the type in which substrates are removed one after another from a processing chamber, a shutter is disposed between a film forming means and a film forming rate measuring means provided in the processing chamber, and a measurement timing command means is provided outside the processing chamber. , the measurement timing command means is connected to the control signal generation means, and an open/close signal is sent to the shutter through the control signal generation means after a set number of films have been formed. Device.
JP16271281A 1981-10-14 1981-10-14 Manufacturing device for continuously film Granted JPS5864021A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16271281A JPS5864021A (en) 1981-10-14 1981-10-14 Manufacturing device for continuously film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16271281A JPS5864021A (en) 1981-10-14 1981-10-14 Manufacturing device for continuously film

Publications (2)

Publication Number Publication Date
JPS5864021A true JPS5864021A (en) 1983-04-16
JPS629213B2 JPS629213B2 (en) 1987-02-27

Family

ID=15759852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16271281A Granted JPS5864021A (en) 1981-10-14 1981-10-14 Manufacturing device for continuously film

Country Status (1)

Country Link
JP (1) JPS5864021A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0428601U (en) * 1990-07-04 1992-03-06

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50125451U (en) * 1974-03-29 1975-10-15
JPS5120356A (en) * 1974-08-08 1976-02-18 Mitsubishi Heavy Ind Ltd Fuookurifutono tentoboshisochi
JPS5314439A (en) * 1976-06-30 1978-02-09 Hitachi Heating Appliance Co Ltd Power supply of microwave oven
JPS53153039U (en) * 1977-05-09 1978-12-01

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50125451U (en) * 1974-03-29 1975-10-15
JPS5120356A (en) * 1974-08-08 1976-02-18 Mitsubishi Heavy Ind Ltd Fuookurifutono tentoboshisochi
JPS5314439A (en) * 1976-06-30 1978-02-09 Hitachi Heating Appliance Co Ltd Power supply of microwave oven
JPS53153039U (en) * 1977-05-09 1978-12-01

Also Published As

Publication number Publication date
JPS629213B2 (en) 1987-02-27

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