JPS5861470U - Semiconductor single crystal growth equipment - Google Patents

Semiconductor single crystal growth equipment

Info

Publication number
JPS5861470U
JPS5861470U JP15776281U JP15776281U JPS5861470U JP S5861470 U JPS5861470 U JP S5861470U JP 15776281 U JP15776281 U JP 15776281U JP 15776281 U JP15776281 U JP 15776281U JP S5861470 U JPS5861470 U JP S5861470U
Authority
JP
Japan
Prior art keywords
single crystal
crystal growth
ampoule
semiconductor single
heating furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15776281U
Other languages
Japanese (ja)
Inventor
研二 丸山
吉河　満男
伊藤　道春
Original Assignee
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士通株式会社 filed Critical 富士通株式会社
Priority to JP15776281U priority Critical patent/JPS5861470U/en
Publication of JPS5861470U publication Critical patent/JPS5861470U/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の半導体単結晶成長装置を説明する要部縦
断面図、第２図は本考案に係る半導体単結晶成長装置の
一実施例を示す要部縦断面図、第　１３図は本考案に係
る振れ止め具の一実施例を説明する横断面図である。 図において、１は結晶成長原料、２はアンプル、４は縦
型加熱炉、６は吊り下げ棒、２１は振れ止め具、２３は
貫通孔を示す。FIG. 1 is a longitudinal cross-sectional view of a main part of a conventional semiconductor single crystal growth apparatus, FIG. 2 is a longitudinal cross-sectional view of a main part of an embodiment of a semiconductor single crystal growth apparatus according to the present invention, and FIG. FIG. 2 is a cross-sectional view illustrating an embodiment of the steady rest according to the invention. In the figure, 1 is a raw material for crystal growth, 2 is an ampoule, 4 is a vertical heating furnace, 6 is a hanging rod, 21 is a steady rest, and 23 is a through hole.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 一縦型加熱炉と、結晶成長原料を封入したアンプルと、
該アンプルを前記加熱炉内に吊り下げ棒を介して上下動
自在に設定する駆動手段とを備え、上記アンプルを炉内
で除々に垂下させて単結晶を成長させる装置において、
前記加熱炉の上部開口端部に、前記吊り下げ棒を遊挿し
てなるアンプル振れ止め用弾性消勢手段を付設したこと
を特徴とする半導体単結晶成長装置。A vertical heating furnace, an ampoule filled with crystal growth raw materials,
A device for growing a single crystal by gradually suspending the ampoule in the furnace, comprising a driving means for vertically movably setting the ampoule in the heating furnace via a hanging rod,
A semiconductor single crystal growth apparatus characterized in that an ampoule resting elastic deenergizing means is attached to the upper opening end of the heating furnace, the hanging rod being loosely inserted therein.
JP15776281U 1981-10-22 1981-10-22 Semiconductor single crystal growth equipment Pending JPS5861470U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15776281U JPS5861470U (en) 1981-10-22 1981-10-22 Semiconductor single crystal growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15776281U JPS5861470U (en) 1981-10-22 1981-10-22 Semiconductor single crystal growth equipment

Publications (1)

Publication Number Publication Date
JPS5861470U true JPS5861470U (en) 1983-04-25

Family

ID=29950274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15776281U Pending JPS5861470U (en) 1981-10-22 1981-10-22 Semiconductor single crystal growth equipment

Country Status (1)

Country Link
JP (1) JPS5861470U (en)

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