JPS5860695A - Seed crystal supporting jig for pulling up apparatus of silicon single crystal - Google Patents
Seed crystal supporting jig for pulling up apparatus of silicon single crystalInfo
- Publication number
- JPS5860695A JPS5860695A JP15981481A JP15981481A JPS5860695A JP S5860695 A JPS5860695 A JP S5860695A JP 15981481 A JP15981481 A JP 15981481A JP 15981481 A JP15981481 A JP 15981481A JP S5860695 A JPS5860695 A JP S5860695A
- Authority
- JP
- Japan
- Prior art keywords
- seed
- seed crystal
- crystal
- single crystal
- chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks
Abstract
Description
【発明の詳細な説明】
本発明は単結晶シリコン引上装置の種結晶支持治具に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a seed crystal support jig for a single crystal silicon pulling apparatus.
半導体素子又は集積回路用単結晶シリコンは、主にチョ
クラルスキー法（ＣＺ法）によって製造されている。こ
の方法は、ルツボ内に多結晶シリコン原料を入れ、周囲
から加熱して該多結晶シリコンを溶融させ、この溶融物
ｌこ上部からワイヤ等で吊り下げられた種結晶ホルダに
堆り付けられた種結晶を浸し、上方ｌこ引上げて単結晶
を造るものである。Single crystal silicon for semiconductor devices or integrated circuits is mainly manufactured by the Czochralski method (CZ method). In this method, a polycrystalline silicon raw material is placed in a crucible, heated from the surroundings to melt the polycrystalline silicon, and the melt is deposited on a seed crystal holder suspended from the top with a wire or the like. A single crystal is produced by dipping a seed crystal and pulling it upwards.
ところで、従来、単結晶シリコン引上装置の種結晶の種
結晶ホルダへの取り付けはｗｃ１図（ａ）。By the way, conventionally, the attachment of a seed crystal to a seed crystal holder in a single crystal silicon pulling apparatus is shown in Figure 1(a).
（ｂｌに示す如く行われていた。すなわち、種結晶ホル
ダノに凹状部が側部に形成された耐熱金属製シードチャ
ック２を保持し、前記凹状部に５〜１０１１１０の種結
晶３を鋏合し、シードチャック２と種結晶３を耐熱金属
製ワイヤ４・・・で巻回して取り付けていた。(This was carried out as shown in bl. In other words, a heat-resistant metal seed chuck 2 with a concave portion formed on the side is held in a seed crystal holder, and 5 to 101110 seed crystals 3 are scissored into the concave portion. , the seed chuck 2 and the seed crystal 3 were wound and attached with a wire 4 made of heat-resistant metal.
しかし、上記従来方法では、高熱のためワイヤ４・・に
延びが生じたり、単結晶の育成に伴って単結晶シリコン
の重量が増加することにより、単結晶シリコンの方位が
狂ったり育成中の単結晶がずり落ちて単結晶化された部
分が融液に戻され、この結果単結晶が壊れたり、融液の
温度が急変して単結晶の直径制御が困ＪＩＢどなるとい
う間馳点があった。However, in the conventional method described above, the wire 4... may elongate due to high heat, and the weight of the single crystal silicon increases as the single crystal grows, causing the orientation of the single crystal silicon to be distorted and the single crystal being grown to be The crystal slipped off and the single-crystalized part was returned to the melt, resulting in breakage of the single crystal, or sudden changes in the temperature of the melt, making it difficult to control the diameter of the single crystal and causing JIB problems. .
一方、第２図に示す如く、種結晶ホノ？ダ１の下部四部
に種結晶３を挿入し、耐熱金属製のさしビン５で固定す
るという方法も知られている。On the other hand, as shown in Figure 2, the seed crystal hono? A method is also known in which a seed crystal 3 is inserted into the lower four parts of the holder 1 and fixed with a holder 5 made of heat-resistant metal.
しかし、上記方法では、種結晶３を使用前に化学洗浄（
エツチング）するため種結晶３が徐々に細、くなること
１（より、取付部ｌこガタが生じ、単結晶シリコンの方
位が狂ったり、育成中の単結晶に曲りが生ずるという問
題点があった。また、種結晶３の寸法精度が慾い場合も
手配と同様の問題点を生じる。さらに、炉の大型化に伴
い、炉を高温に加熱することから、さしピン５が固着し
て種結晶３が増り外せなくなる等という間顕点もあった
。However, in the above method, the seed crystal 3 is chemically cleaned (
The problem is that the seed crystal 3 gradually becomes thinner due to the etching (etching), which causes looseness at the mounting part, causing the orientation of the single crystal silicon to go out of order, and the single crystal being grown to be bent. In addition, if the dimensional accuracy of the seed crystal 3 is poor, the same problem as the arrangement will occur.Furthermore, as the furnace becomes larger, the furnace is heated to a high temperature, so the insert pin 5 may become stuck. There were also some notable points, such as the number of seed crystals 3 increasing and becoming impossible to remove.
本発明は上記事情に鑑みてなされたものであり、単結晶
シリコンの引−ヒげにおいて、単結晶シリコンがずり落
ちず、かつ種結晶の取り外しが容易な単結晶シリコン引
上装置の種結晶支持治具を提供しようとするものである
。The present invention has been made in view of the above circumstances, and provides a seed crystal support for a single crystal silicon pulling apparatus that prevents single crystal silicon from slipping off when pulling the single crystal silicon, and allows easy removal of the seed crystal. The aim is to provide a jig.
以下本発明を第３図（ａｔ〜（Ｃ１図示の実施例を参照
して説明する。The present invention will be described below with reference to the embodiment shown in FIGS.
第３図（ａｌは種結晶支持部の正面図、第３図（ｂｌは
第３図（ａｌの一部縦断面図、第３図（Ｃ１は第３図（
ａｌのＢ−Ｂ線の拡大断面図である。Figure 3 (al is a front view of the seed crystal support part, Figure 3 (bl is a partial vertical cross-sectional view of Figure 3), Figure 3 (C1 is a front view of the seed crystal support part,
FIG. 3 is an enlarged cross-sectional view taken along line BB of al.
図中ＩＪは種結晶ホルダであり、このホルダＪ１はチャ
ンバー（図示せず）内にワイヤ（図示せず）＃こよって
吊り下げられている。このホルダＪ１の下部には、耐熱
金属、倒えばモリブデン製のシードチャック１２が保持
されている。IJ in the figure is a seed crystal holder, and this holder J1 is suspended by a wire (not shown) # in a chamber (not shown). A seed chuck 12 made of a heat-resistant metal, preferably molybdenum, is held at the bottom of the holder J1.
このシードチャック１２は５〜１０肛口の種結晶１３が
嵌合される凹状部が仙１部に形成さね、かつ上部に保合
孔を有する。才だ、図中１４は耐熱金属、例えばモリブ
デン製の抑え具であり、この抑え具１４は種結晶１３が
嵌合される凹状部が側部に形成され、かつ上部にシード
チャック１２の保合孔に係合する第１の凸部Ｊ４ａ及び
中央部に種結晶１３の一部の孔に嵌合する第２の凸部Ｊ
４ｂを有する。これらシードチャックに及び抑えＪＬＪ
４は種結晶Ｊ３を嵌合した状態で耐熱金属、例えばモリ
ブデン製のワイヤ１５・・・により連結されている。This seed chuck 12 has a concave portion formed at the base 1 in which the seed crystal 13 having 5 to 10 openings is fitted, and has a retaining hole in the upper portion. In the figure, reference numeral 14 denotes a retainer made of a heat-resistant metal such as molybdenum, and this retainer 14 has a concave portion formed on the side into which the seed crystal 13 is fitted, and a recessed portion on the top for securing the seed chuck 12. A first convex part J4a that engages with the hole and a second convex part J that fits into a part of the hole of the seed crystal 13 in the center part.
It has 4b. These seed chucks and suppresses JLJ
4 are connected by wires 15 made of a heat-resistant metal, for example, molybdenum, with the seed crystal J3 fitted therein.
このような構成によれば、今、支持治具により支持され
た種結晶Ｊ３を石英ルツボ（図示せず）内の溶融シリコ
ンに浸して、種結晶１３を回転しながら単結晶シリコン
を引上げる整合、ワイヤ１５・・・に砥びが生じたり、
単結晶シリコンの重量が増加しても、シードチャック１
２の側部の凹状部４こ種結晶Ｉ３を嵌合し、さら（（抑
え具１４の第１の６刊Ｊ ４ ａをシードチャックＪ２
の保合孔に係合し、第２の凸部〕４ｂを種結晶１３の側
部の孔に嵌合するとともにｆＡ１部の凹状部に種結晶１
３を一低合し、これらを、ワイヤノ５・・・で連結する
ことにより種結晶１３をシードチャックＪ２と抑え具Ｊ
４で強固に固定した構造になっているため、単結晶シリ
コンの方位が狂ったり、育成中の単結晶シリコンがずり
落ちることを防止できる。また、ワイヤ１５・・・をほ
どくことにより種結晶１３を容易に取り外すこともでき
る。According to such a configuration, the seed crystal J3 supported by the support jig is now immersed in molten silicon in a quartz crucible (not shown), and while the seed crystal 13 is rotated, the single crystal silicon is pulled up. , the wire 15... may become abrasive,
Even if the weight of single crystal silicon increases, seed chuck 1
Fit the seed crystal I3 in the recessed part 4 on the side of the
The second convex portion] 4b is fitted into the hole on the side of the seed crystal 13, and the seed crystal 1 is inserted into the concave portion of fA1.
3 and connect them with wire rope 5... to connect the seed crystal 13 to the seed chuck J2 and the holding tool J.
4, it is possible to prevent the orientation of the single crystal silicon from going out of order and the single crystal silicon being grown from falling off. Further, the seed crystal 13 can be easily removed by untying the wires 15.
以上詳述し夕如く本発明によれば、離結６晶シリコンの
引上げにおいて、単結晶シリコンがすり落ちず、所望の
単結晶シリコンを歩留りよく得るζ・ｔとができ、かつ
種結晶を容易に象り外すことができる単結晶シリコン引
上装置の種結晶支持治具を提供できるものである。As described in detail above, according to the present invention, when pulling dissociated hexcrystalline silicon, the single crystal silicon does not fall off, the desired single crystal silicon can be obtained at a high yield, and the seed crystal can be easily prepared. It is possible to provide a seed crystal support jig for a single-crystal silicon pulling device that can be removed from the mold.
第１図慣）は従来の単結晶シリコン引上装置の拘結晶支
持部を示す正面図、第１図（ｂｌは第１図（ａｔのＡ−
Ａ、ＩＩの拡大断面図、第２図は従来の他の単結晶シリ
コン引上装置の種結晶支持部を示す正面図、第３図（ａ
）は本発明の実施例１こおける単結晶シリコン引上装置
の種結晶支持治具を示す正面図、第３図（ｂｌは第３１
図（ａｌの−・部縦断面図、第３図１ｃ）は第３図（ａ
ｌのＢ−Ｂ＠の拡大断面図である。
１）・・・種結晶ホルダ、１２・・・シードチャック、
１３１１結晶、１４−・・抑え具、１４ａ１１４ｂ・・
・凸部、１５・・・ワイヤ。
出如へ代塩入 弁理早コ鈴−江 武 彦第３図Figure 1 (1) is a front view showing a constrained crystal support part of a conventional single crystal silicon pulling apparatus;
A, II are enlarged sectional views, FIG. 2 is a front view showing the seed crystal support part of another conventional single crystal silicon pulling apparatus, and FIG.
) is a front view showing the seed crystal support jig of the single crystal silicon pulling apparatus in Example 1 of the present invention, and FIG.
The figure (al - section longitudinal sectional view, Fig. 3 1c) is shown in Fig. 3 (a
It is an enlarged sectional view of BB@ of l. 1) Seed crystal holder, 12 Seed chuck,
1311 Crystal, 14-... Holder, 14a114b...
- Convex portion, 15...wire. Denyo to Shioiri Benri Hayako Suzu-E Takehiko Figure 3
Claims (1)
に保合孔を有する耐熱金属製のシードチャックと、この
シードチャックの保合孔に係合する第１の凸部及び前記
種結晶の側Ｍの孔に嵌合する第２の凸部を側部に有する
耐熱金属製の抑え具と、前記シードチャックと抑え一具
を連結する連結具とを具備したことを特徴とする単結晶
シリコン引上装置の種結晶支持治具。A seed chuck made of a heat-resistant metal having a concave portion in which the seed crystal is fitted is formed on the side and a retaining hole in the upper portion, a first convex portion that engages with the retaining hole of the seed chuck, and the seed chuck. It is characterized by comprising a heat-resistant metal holding device having a second convex portion on its side that fits into the hole on side M of the seed crystal, and a connecting device connecting the seed chuck and the holding device. Seed crystal support jig for single crystal silicon pulling equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15981481A JPS5860695A (en) | 1981-10-07 | 1981-10-07 | Seed crystal supporting jig for pulling up apparatus of silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15981481A JPS5860695A (en) | 1981-10-07 | 1981-10-07 | Seed crystal supporting jig for pulling up apparatus of silicon single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5860695A true JPS5860695A (en) | 1983-04-11 |
Family
ID=15701825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15981481A Pending JPS5860695A (en) | 1981-10-07 | 1981-10-07 | Seed crystal supporting jig for pulling up apparatus of silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5860695A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102492983A (en) * | 2011-12-22 | 2012-06-13 | 浙江金瑞泓科技股份有限公司 | Seed chuck used for growth of czochralski silicon single-crystal |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4214724Y1 (en) * | 1965-02-24 | 1967-08-23 | ||
| JPS5025713U (en) * | 1973-07-11 | 1975-03-25 |
-
1981
- 1981-10-07 JP JP15981481A patent/JPS5860695A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4214724Y1 (en) * | 1965-02-24 | 1967-08-23 | ||
| JPS5025713U (en) * | 1973-07-11 | 1975-03-25 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102492983A (en) * | 2011-12-22 | 2012-06-13 | 浙江金瑞泓科技股份有限公司 | Seed chuck used for growth of czochralski silicon single-crystal |
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