JPS5860243U - transparent photocell - Google Patents
transparent photocellInfo
- Publication number
- JPS5860243U JPS5860243U JP12066682U JP12066682U JPS5860243U JP S5860243 U JPS5860243 U JP S5860243U JP 12066682 U JP12066682 U JP 12066682U JP 12066682 U JP12066682 U JP 12066682U JP S5860243 U JPS5860243 U JP S5860243U
- Authority
- JP
- Japan
- Prior art keywords
- conductive layers
- thin film
- photocell
- photoconductive layer
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims 6
- 238000005299 abrasion Methods 0.000 claims 1
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案ホトセルの構造および使用の態様を示す
略因、第２図は本考案ホトセルを光学系に組込んだ状況
を示す図である。
１０．３０’・・・ホトセル、１８．３０・・・下層、
１２．１４・・・導電層、１６・・・光導電層、２０゜
２０′・・・電源、２４． ２４’・・・電流計、３２
・・・光学系。FIG. 1 is a schematic diagram showing the structure and mode of use of the photocell of the present invention, and FIG. 2 is a diagram showing the situation in which the photocell of the present invention is incorporated into an optical system. 10.30'... Photocell, 18.30... Lower layer,
12.14... Conductive layer, 16... Photoconductive layer, 20°20'... Power supply, 24. 24'...Ammeter, 32
···Optical system.
Claims (1)
挾持された光導電層を有するホトセルに−おいて、これ
ら層のすべてが透明であり、前記導電層の１つを透明下
層上に蒸着して形成し、これら各導電層はそれぞれ薄膜
であり、光導電層は高周波スパッタリングにより蒸着し
た蒸着無機材料のスパッタ微結晶構造の薄膜であり、か
つこの薄膜光導電層は３０００八以下の程度の厚さとし
、光導電層は硬質の耐磨耗性表面を有し、薄膜導電層は
それぞれ約１００Ａ程度より大でない厚さとし、第１お
よび第２薄膜導電層間に電圧を印加する手段を設け、こ
れら薄膜導電層間に流れる電流をこのホトセルを通過す
る放射線に対応する量として ″検出することを特徴と
する透明ホトセル。In a photocell having a pair of conductive layers and a photoconductive layer sandwiched between the conductive layers in a Sand-Deutsch technique, all of the layers are transparent and one of the conductive layers is placed on a transparent underlayer. Each of these conductive layers is a thin film, and the photoconductive layer is a thin film with a sputtered microcrystalline structure of a vapor-deposited inorganic material deposited by high frequency sputtering, and this thin film photoconductive layer has a particle diameter of 3000 8 or less. the photoconductive layer has a hard abrasion resistant surface, the thin film conductive layers each have a thickness of no greater than about 100 A, and means for applying a voltage between the first and second thin film conductive layers; A transparent photocell that detects the current flowing between these thin film conductive layers as an amount corresponding to radiation passing through the photocell.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US39730873A | 1973-09-14 | 1973-09-14 | |
| US397308 | 1973-09-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5860243U true JPS5860243U (en) | 1983-04-23 |
Family
ID=23570683
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49012284A Pending JPS5057482A (en) | 1973-09-14 | 1974-01-31 | |
| JP12066682U Pending JPS5860243U (en) | 1973-09-14 | 1982-08-10 | transparent photocell |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49012284A Pending JPS5057482A (en) | 1973-09-14 | 1974-01-31 |
Country Status (9)
| Country | Link |
|---|---|
| JP (2) | JPS5057482A (en) |
| BE (1) | BE810459A (en) |
| CA (1) | CA1022659A (en) |
| CH (1) | CH575659A5 (en) |
| DE (1) | DE2404645A1 (en) |
| FR (1) | FR2246075B1 (en) |
| GB (1) | GB1457343A (en) |
| IT (1) | IT1002816B (en) |
| NL (1) | NL7401317A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2652608C3 (en) * | 1976-11-19 | 1979-12-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Arrangement for regulating the output power of a semiconductor laser |
| JPS5734535A (en) * | 1980-08-12 | 1982-02-24 | Mamiya Koki Kk | Photometric method in camera |
| JPS6032031A (en) * | 1983-08-03 | 1985-02-19 | Canon Inc | Photographing device |
| JPS60167534A (en) * | 1984-02-10 | 1985-08-30 | Fujitsu Ltd | Light branching photoelectric transducer |
| US4745426A (en) * | 1985-10-04 | 1988-05-17 | Canon Kabushiki Kaisha | Light measuring device for a camera |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4125387Y1 (en) * | 1964-10-09 | 1966-12-27 | ||
| JPS4826981A (en) * | 1971-07-23 | 1973-04-09 |
-
1974
- 1974-01-31 CH CH131174A patent/CH575659A5/xx not_active IP Right Cessation
- 1974-01-31 BE BE140425A patent/BE810459A/en not_active IP Right Cessation
- 1974-01-31 IT IT4806374A patent/IT1002816B/en active
- 1974-01-31 JP JP49012284A patent/JPS5057482A/ja active Pending
- 1974-01-31 NL NL7401317A patent/NL7401317A/en active Search and Examination
- 1974-01-31 GB GB454774A patent/GB1457343A/en not_active Expired
- 1974-01-31 DE DE19742404645 patent/DE2404645A1/en not_active Withdrawn
- 1974-01-31 FR FR7403263A patent/FR2246075B1/fr not_active Expired
- 1974-01-31 CA CA191,422A patent/CA1022659A/en not_active Expired
-
1982
- 1982-08-10 JP JP12066682U patent/JPS5860243U/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5057482A (en) | 1975-05-19 |
| NL7401317A (en) | 1975-03-18 |
| IT1002816B (en) | 1976-05-20 |
| DE2404645A1 (en) | 1975-03-27 |
| CH575659A5 (en) | 1976-05-14 |
| FR2246075A1 (en) | 1975-04-25 |
| FR2246075B1 (en) | 1978-01-06 |
| BE810459A (en) | 1974-07-31 |
| CA1022659A (en) | 1977-12-13 |
| GB1457343A (en) | 1976-12-01 |
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