JPS5858275A - Vapor deposition device - Google Patents

Abstract

PURPOSE:To provide vapor-deposited films of a uniform thickness on many substrates with one time of vapor deposition treatment by providing a supporting body for a vapor source at the center of a vacuum vessel in the position equidistant from respective substrate holders, and moving the vapor source vertically along the supporting body. CONSTITUTION:Substrate holders 3 are mounted to the cryogenic panels 2 disposed in a bell-jar 1, and substrates 4 are fixed and held to the holders 3. A supporting body 5 for a vapor source is located on the centerline of the bell-jar 1, and a vapor source 6 contg. evaporating materials 7 is supported to said body. The source 6 is moved vertically along the body 5 according to adequate scanning parameters. Vapor-deposited films of a uniform thickness are obtained by such device, and the number of the large area substrates to be treated per batch is increased.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a vapor deposition apparatus, which is capable of forming a vaporized film with a uniform thickness on a large-area I￥fK substrate, and which is capable of bonding a large number of substrates in a single vapor deposition process. The present invention relates to a vapor deposition apparatus that can form a film.

Generally, when depositing a thin film of uniform thickness over the entire surface of a large-area substrate, conventional methods have been used in which the evaporation source is fixed and the substrate is rotated around its axis.

The two main drawbacks of this method are:

(1) The rotation drive system required for rotation and revolution becomes large-scale and complicated, and occupies a considerable amount of space in the vacuum chamber.

Therefore, considerable restrictions are imposed on the setting positions of various other monitoring devices (e.g., evaporation rate monitor, film thickness monitor, etc.) or various analysis devices (ion gun, energy analyzer for Hiroko Auger spectroscopy, etc.). .

(11) The position of the substrate holder on which the object to be evaporated is usually located above the evaporation source located below the center of the vacuum chamber, making it easy to mount large-area substrates! The size of the holder is approximately the cross-sectional area of the vacuum chamber (a plane cut along a plane parallel to the bottom of the vacuum chamber), and is approximately determined by the inner diameter of the vacuum chamber (Pelger).

Therefore, it is not possible to increase the number of large-area substrates processed per unit.

The present invention has been made to eliminate the above-mentioned drawbacks, and its purpose is to provide a vapor deposition apparatus that can provide a deposited film of uniform thickness to a large number of substrates through a single vapor deposition process. be.

The above purpose is to provide a distillation apparatus comprising an evaporation source, an evaporation source support, and a plurality of substrate holders housed in a vacuum chamber, with the evaporation source support located at the center of the vacuum chamber and equidistant from each substrate holder. This is achieved by a vapor deposition apparatus characterized in that the vapor deposition source is moved downward along the vapor deposition source support.

In the vapor deposition apparatus of the present invention, by fixing the substrate and moving the evaporation source up and down along the evaporation source support, it is possible to deposit a film with a uniform thickness over the entire surface of a large-area substrate. In addition, since the moving object is a small evaporation source, the vertical moving device can be made small and compact, and the space occupied in the vacuum chamber is reduced compared to the conventional method. There is sufficient leeway in the arrangement of direct or analytical equipment. Furthermore, the evaporation source is lightweight, and therefore the vibrations generated during its movement are small.

In contrast, in conventional methods, a substrate holder with multiple large-area substrates mounted thereon is rotated, which generates non-negligible vibrations that adversely affect the fabricated thin-film devices. Moreover, this vibration is often one of the causes of failures in the rotary drive system.

As shown in FIGS. 1 and 2, since the substrate holder is installed parallel to the wall of the vacuum chamber, the dimensions of the substrate holder depend on the surface roughness of the vacuum chamber. For example, inner diameter 3001
111. 240o+X80m in a vacuum chamber with a height of 600m
When depositing a large-area substrate with a size of , the effective cross-sectional area is ~1800 cm'', and with the conventional method, only 48 tubes can be attached and detached per batch, but with this device, the effective sidewall surface area is ~500 cat”
The number of sheets processed per batch is approximately 16, which is twice as many as in the conventional method.

The vapor deposition apparatus of the present invention will be explained with reference to the drawings. FIG. 1 is a longitudinal cross-sectional view of the device of the present invention, and FIG. 2 is a cross-sectional view. In these figures, 1 is usually made of stainless steel.
It is Luzier, and Cryo Panel 2 is placed inside it. In the cryo/R channel, liquid nitrogen or cooling water is added to create a cooling surface, and the vapor deposited particles or residual gas molecules released in the vacuum space are captured on this cooling surface, and the diffusion of the vapor deposited particles causes the inner walls of the Pelger to cool. is designed to prevent contamination.

Reference numeral 3 denotes a substrate holder attached to the cryo-channel, and is used to securely hold the substrate 4 for evaporation. Reference numeral 5 denotes a support body for supporting the evaporation source 6, which is located on the Pelger center line, and the evaporation source can move up and down along this support body. The evaporation source 6 is a container for storing a vapor deposited material 7 and is made of heat-resistant material. 8 is a heater for heating the substrate 4. FIG. 6 is a diagram showing the position t#L relationship between the evaporation source and the substrate,
Let the Z-axis revolve around the evaporation source support rod, the point Z=0 is the lowest position of the evaporation source, ZmaX is the highest position, and any point in the vacuum chamber is expressed in cylindrical coordinates. Therefore, the evaporation source moves up and down within the range of coordinates (from 0°k to

The present invention will be explained in detail using FIGS. 1 and 6.

In FIG. 1, when the position of the evaporation source 6 is fixed, the thickness distribution width of the film formed on the large-area substrate 4 increases, as will be explained below. The formation of a deposited film with a thickness is not achieved.

Assuming that the evaporation source is stationary at the position of z = 0,
Since the film thickness is inversely proportional to the square of the distance from the evaporation source to any point on the substrate, the film thickness distribution 1 is thinner at the top and thicker at the bottom, as shown in Figure 4. shows.

However, according to the present invention, a thin film having a uniform thickness is deposited on a large area substrate by moving the position of the evaporation source along the support 5 located on the center line of the vacuum chamber.

The scanning parameters of the evaporation source consist of the scanning distance period T2 of the evaporation source. The above parameters depend on the required film thickness, variations in the required film thickness, the length of the substrate, the shape and dimensions of the evaporation source, and the distance γ8 from the evaporation source to the substrate (see Figure 3). By fixing these parameters and optimizing the scanning and R parameters, a deposited film having any desired uniform thickness can be obtained on a large-area substrate.

The apparatus of the present invention can perform thin film deposition (e.g., molecular beam epitaxy, molecular epitaxy) not only in a high vacuum of 10-6 to 10-5 Torr, but also in an ultra-high vacuum of 10-8 Torr or less. It is extremely useful in these technical fields as it allows for deposition of uniform thickness on a large number of large area substrates.

For example, it is particularly useful in the formation of thin film transistors on large area substrates, or in the formation of optoelectronic devices, for applications in large area displays, large area reading devices, etc.

In particular, in epitaxy in an ultra-high vacuum, each monitor mounting and analysis device is usually introduced into a vacuum chamber, so the space saving, which is one of the major advantages of the present invention, reduces the number of wafers processed per batch. This is an advantageous feature to increase.

The present invention will be explained in more detail with reference to the following examples.

Example: The following is an example of the A4 steam layer of At #51i&A.The following is an example of the case where the inner diameter is 30 Q w x Φ, the height is 600 -, and it is installed in a stainless steel Luger, 250 fl Φ, height 30010
240WX801111 on the At substrate holder of 1.
Attach 10 glass substrates.

Next, after evacuating this Pelger to a level of 10 −6 Torr, the substrate holder is heated to 200 C and At vapor deposition is started.

Scanning of the evaporation source optimized to obtain a uniform film thickness in advance! The position of the evaporation source is changed synchronously along the evaporation source support rod using a ray meter, and ±5% is applied to the final film thickness of 1 μm.
The uniformity of the film thickness was obtained within

In the above description, an example in which a Pelger was used as the vacuum chamber was described for convenience, but it goes without saying that any prismatic vacuum chamber with a square cross section can be used in the same manner.

[Brief explanation of drawings]

FIG. 1 is a longitudinal cross-sectional view of the apparatus of the present invention, FIG. 2 is a cross-sectional view, FIG. 6 is a diagram showing the positional relationship between the evaporation source and the substrate, and FIG. 4 is a stationary evaporation source. FIG. 2 is a diagram showing the distribution of the thickness of the vapor deposited film on the substrate when using the method. Relatives in the diagram: 1-11 bell jar, 2-m-cryo-nominal, 6--substrate holder, 4--1 substrate, 5-
m-support, 6--evaporation source, 7--evaporation bond, 8- (and 6 others) Is 1 Figure II 2 Figure

Claims (1)

[Claims] In a vapor deposition apparatus in which a vapor deposition source, a vapor deposition source support, and a plurality of substrate holders are housed in a vacuum chamber, the vapor deposition source support is located at the center of the vacuum chamber and at an equal U distance from each substrate holder. A vapor deposition apparatus, characterized in that the vapor deposition source is provided in such a way that the vapor deposition source moves up and down along the vapor deposition source support.