JPS5856371A - Semiconductor light-emitting element - Google Patents
Semiconductor light-emitting elementInfo
- Publication number
- JPS5856371A JPS5856371A JP56153762A JP15376281A JPS5856371A JP S5856371 A JPS5856371 A JP S5856371A JP 56153762 A JP56153762 A JP 56153762A JP 15376281 A JP15376281 A JP 15376281A JP S5856371 A JPS5856371 A JP S5856371A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- emitting element
- light
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Abstract
Description
【発明の詳細な説明】
本発明は、Ｐ形（ＪａＡｓ基根上にＰ形ＧａＡＪＡＳ増
及びＮ ％ ＧａすＡ１層からなるＰＮ接合を徐冷液相
成長法により形成し丸高効率発光素子、％に赤色発光素
子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a round high-efficiency light-emitting device, in which a PN junction consisting of a P-type GaAJAS layer and an N% GaAl layer is formed on a P-type (JaAs root) by a slow cooling liquid phase growth method. This invention relates to a red light emitting element.
Ｐ形（ｊａＡｓ基板を使用したシンメルヘテｏｌｌｌ造
赤色発光素子の高効率化のために従来、種々の方法が考
えられてき友。その代表的なものは、「Ｊ、Ａｐｐｌ。Various methods have been considered in the past to improve the efficiency of Schimmel-heteroll red light emitting devices using P-type (JAAs substrates).The representative method is "J. Appl.
Ｐｈｙａ、 ｖｏｌ、 ４８． Ｎｏ、 ８． Ｐ、
３４８４−Ｐ、 ３４９５ （１９７７、発行）」に記
載されている６沢らによる温度ｊＩｌ法液相成員法であ
る。この液相成員法は、従来の徐冷液相成長法に比して
、装置が複雑で量産性に乏しい欠点がある。また装置が
簡単で量産性について従来よシ実積のある余冷液相成長
法においては、［ＮｍｔｉｏｎａｌＴｅｃｈｎゑＣａ１
ｌ ）Ｌｅｐｏｒｔ ｖｏｌ、２５． ＮＯ６，Ｐ１１
３１〜Ｐ１１４０ （１９７９゜１２発行）」ＶＣ記載
されている。この方法は不純物濃度の最適化や成艇速度
の最適化を主眼とした文献である。さらに［特開昭５６
−７０６７６−ｉＪに記載されている方法はｎ）−不純
ＷｄＩＸの最適化を主眼とじ九文献である。Phya, vol, 48. No, 8. P,
3484-P, 3495 (published in 1977)" is the temperature jIl method liquid phase member method by Mizuzawa et al. This liquid phase deposition method has the disadvantage that the equipment is complicated and mass productivity is poor compared to the conventional slow cooling liquid phase growth method. In addition, in the precooled liquid phase growth method, which has a simple equipment and has a proven track record for mass production, [Nmtional Technique Ca1
l) Report vol, 25. NO6, P11
31-P1140 (published December 1979)" VC is listed. This method is a document that focuses on optimizing impurity concentration and boat building speed. Furthermore, [Unexamined Japanese Patent Publication No. 56
The method described in No. 70676-iJ is a nine-document publication that focuses on the optimization of n)-impure WdIX.
本発明は、上記公知例のに示された以外で、高効率化を
はかれる巣子構造を提供するものでのる。The present invention provides a nesting structure which is capable of increasing efficiency, in addition to those shown in the above-mentioned known examples.
第１図に本発明の高効″ｊｉ！−兄元素子の構造（ａ）
及びＡｊＡｓ組成比の液相成長方向の分布（ｂ）を示す
。１−１はＰ形（ｊａＡｓ、ｉ板で、１−２は発光層と
なるＰ形ＧａＡｊＡｓｌ−で、成長開始温１ｉ ８５０
υ位で液相エピタキシャル層長された層である。１−３
は注入１−であるｎ形ＧａＡｊＡｓ層を示すもので、成
長開始温度８００℃〜８４０’０で液相エピタキシャル
層である３、これらは冷却速ｇｏ、５℃／分位で行った
ものである。ＡＪＡｓ組成比は、徐冷法においては成長
温度に強く依存し、Ｐ形ＧｓムｊＡ１層１−３の成長に
おいて４１−４から１−５と変化し、ｎ ％ ＧａＡｊ
Ａｓ＋層の成長においても１−６から１−７と変化して
いる。ちなみに第１図（ｂ）において、１−４は＾ｊＡ
ｓが０．３５． ｌ −５は０．３２．ｌ−７は０．６
４ｇである。ｌ−５で発光した［１−８は、１−７で吸
収されない様に１−７はｌ−５の大きくなっている。Figure 1 shows the structure (a) of the highly effective "ji!-element" element of the present invention.
and distribution (b) of the AjAs composition ratio in the liquid phase growth direction. 1-1 is a P-type (jaAs, i-plate), 1-2 is a P-type GaAjAsl- that will become a light emitting layer, and the growth start temperature is 1i 850
This is a liquid phase epitaxial layer with a length at the υ position. 1-3
3 shows an n-type GaAjAs layer with implantation 1-, which is a liquid-phase epitaxial layer with a growth starting temperature of 800°C to 840'0, and these were performed at a cooling rate of about 5°C/min. . The AJAs composition ratio strongly depends on the growth temperature in the slow cooling method, and changes from 41-4 to 1-5 in the growth of the P-type Gs layer 1-3, and n% GaA
The growth of the As+ layer also changes from 1-6 to 1-7. By the way, in Figure 1(b), 1-4 is ^jA
s is 0.35. l -5 is 0.32. l-7 is 0.6
It is 4g. [1-8 which emitted light at l-5] has a large l-5 so that it is not absorbed by 1-7.
本発明は、この１−２のＰ形（ｊａＡｊＡｓ層の成長厚
の最適化によｐ高効率系子會計ったものである。The present invention is designed to develop a p-high efficiency system by optimizing the growth thickness of the P type (jaAjAs layer) of 1-2.
まず、従来のパラメータである２層不純物としては、Ｉ
ＸＩＯ”（１１〜５ ＸＩＯ’暴−−１で、ｎ層不純
物とし〜１
ては、Ｉ ＸＩＱ町１１−’−Ｉ ＸＩＯ”ｍ−” テ
幼し＆イ厘’ｂｉｌｊ ラれることか判かつており、今
回このパラメーターは固定し、発光波長を６６０ｎｍと
固定し、ｌ−４を成長する温度を固定し、ｌ−５を成長
させる一度を変えて、Ｐ形ＵａＡＡＡｓ層１−２０敵相
成長厚を斌えて、発光卓子を作り、発光特性（１０ロツ
ト）を調べ九ところ＃！２図の様になることが判った。First, the two-layer impurity, which is a conventional parameter, is I
XIO" (11~5 This time, we fixed these parameters, fixed the emission wavelength at 660 nm, fixed the temperature for growing l-4, and changed the growing temperature for l-5 to increase the phase growth thickness of the P-type UaAAAs layer 1-20. I made a light-emitting table and investigated the light-emitting characteristics (10 lots) and found that it was as shown in Figure #!2.
第２図は、横軸にＰ形ＧａＡｊＡｉ層厚、縦軸に発光幼
４Ｊｋ示している。これによると、Ｐ形ＧａＡＡＡｓ層
１−２の厚さが１５μｍをピークとして両サイドでさが
っていることが判かる。これは、１５μｍ以下での効率
の低下は、界面再結合によシ、１５μｍ以上での効率の
低下は、１−２の１−１の界面すなわち、１−４のム１
ムＳ耐成比が高くなり、基板１−１との格子の不螢合が
大きくなる為と思われる。そこで、高効率な素子として
は、ｌ−２の厚さとしては、１０μｍ〜３０μｍのとこ
ろで、平均値２％以上、１２μｍ〜２３μｍのところで
、蝋高平均値（３ｏＡ）に近い（９鴨以上）のｊｉｉ（
２，７％）が得られた。In FIG. 2, the horizontal axis shows the P-type GaAjAi layer thickness, and the vertical axis shows the luminescence layer 4Jk. According to this, it can be seen that the thickness of the P-type GaAAAs layer 1-2 peaks at 15 μm and decreases on both sides. This is because the decrease in efficiency at 15 μm or less is due to interfacial recombination, and the decrease in efficiency at 15 μm or more is due to the 1-1 interface of 1-2, that is, the 1-1 interface of 1-4.
This is thought to be due to the fact that the S ratio becomes higher and the lattice mismatch with the substrate 1-1 becomes larger. Therefore, for a highly efficient element, the average value of l-2 is 2% or more when the thickness is 10 μm to 30 μm, and close to the average wax height (3oA) when the thickness is 12 μm to 23 μm (90 μm or more). jii(
2.7%) was obtained.
第１図（ａ）は本発明の高効率発光素子の構造を示す模
式ｌｌｌ′ｉ＠図、第１図（ｂ）は第１図（１）に対応
し九ＡｊＡｉ組成比の分布を示す図、第２図は本発明の
素子特性を説明する為の図である。
１−１ ・−ｆ”形４１．Ａ―基板。
１−２−＝ Ｐ形（ｊａＡｊＡＳ層。
１−３ ・Ｎ形ＧａＡｊＡｓ ＮＩ。
１−４ ・Ｐ形ＧａＡｊＡｓ Ｊ＠ｌ −Ｐ形ＧａＡｓ
界□面。
１−５・・・Ｐ形ＧａムＩＡ畠発光層。
１−６ ・Ｐ形ＧａＡｊＡｓ層−Ｎ形ＧａＡＪＡｓ層界
面。
１−７−Ｎ形ＧａＡＪＡｓ ４９面。
代理人 弁理士 則 近 麿 佑
ほか１名FIG. 1(a) is a schematic diagram showing the structure of the high-efficiency light emitting device of the present invention, and FIG. 1(b) is a diagram showing the distribution of the 9AjAi composition ratio corresponding to FIG. 1(1). , FIG. 2 is a diagram for explaining the device characteristics of the present invention. 1-1 ・-f" type 41. A-substrate. 1-2-= P-type (jaAjAS layer. 1-3 ・N-type GaAjAs NI. 1-4 ・P-type GaAjAs J@l -P-type GaAs
World□face. 1-5...P-type Gamu IA Hatake light emitting layer. 1-6 - P-type GaAjAs layer-N-type GaAJAs layer interface. 1-7-N type GaAJAs 49 planes. Agent: Patent attorney Nori Chika Maro and 1 other person
Claims (1)
人ｊＡａ層からなるＰＮＮ会合徐冷液相成長法により形
成し、＠ ５ Ｐ ％ ＧａＡｌＡｍ ４不純物層度を
ＩＸ １０”ＣＩＬ−” 〜５ ｘ １０’・Ｃ１８゜
ｆｌｔＪ ％ ｎ形ＧａＡｊＡｉ Ｊ−不純瞼濃度をｌ
ｘ ｔＯ”ｓ−〜１ｘ １０”ｚとした半導体発光素
子において、前記Ｐ形（）ａＡｊＡｓ層の厚さを１０Ｐ
ｍ〜３０μｍとじ九ことを特徴とする半導体発光素子。P-type G-AAs layer and N-type G1 on P-type GaA14 plate
Formed by PNN association slow-cooling liquid phase epitaxy method consisting of 5 x 10' C18゜fltJ% n-type GaAjAi J-impurity layer formed by PNN association slow-cooling liquid phase growth method consisting of 5 x 10' C18゜fltJ% n-type GaAlAm 4 impurity layer. The concentration is l
In the semiconductor light emitting device with x tO"s-~1x 10"z, the thickness of the P type ()aAjAs layer is 10P.
A semiconductor light emitting device characterized in that it has a width of 9 m to 30 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56153762A JPS5856371A (en) | 1981-09-30 | 1981-09-30 | Semiconductor light-emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56153762A JPS5856371A (en) | 1981-09-30 | 1981-09-30 | Semiconductor light-emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5856371A true JPS5856371A (en) | 1983-04-04 |
Family
ID=15569570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56153762A Pending JPS5856371A (en) | 1981-09-30 | 1981-09-30 | Semiconductor light-emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856371A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0645136A (en) * | 1993-01-14 | 1994-02-18 | Matsushita Electric Works Ltd | Iron core for electromagnet |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5670676A (en) * | 1979-11-14 | 1981-06-12 | Sharp Corp | Luminous diode |
-
1981
- 1981-09-30 JP JP56153762A patent/JPS5856371A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5670676A (en) * | 1979-11-14 | 1981-06-12 | Sharp Corp | Luminous diode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0645136A (en) * | 1993-01-14 | 1994-02-18 | Matsushita Electric Works Ltd | Iron core for electromagnet |
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