JPS5856361A - Forming method for alpha-tantalum film by magnetron- sputtering device - Google Patents

Abstract

PURPOSE:To form the alpha-Ta film having excellent adhesive property with an insulating substrate by using tantalum for the cathode of the magnetron-sputtering device and sputtering ions to the substrate in the mixed gas of argon gas and nitrogen gas. CONSTITUTION:The electrode section 12 of the magnetron-sputtering device is formed by a plurality of permanent magnets 19, N poles thereof are made central sections, the cathode (functioning as a target) 20 made of tantalum, a shield 21 surrounding the cathode 20, and an anode 22. The mixed gas of argon gas and nitrogen gas is introduced into a tank 11, currents are flowed through a heater 14, and the temperature of the substrate 13 is elevated up to 150 deg.C or higher. When the DC voltage of several dozen bolts is applied between the cathode 20 and the anode 22 under the state, high-density plasma is generated, and wound round a magnetic field, and charged particles impact the cathode 20 while conducting a cyclo-motion. Tantalum atoms driven out by the impact adhere on the surface of the substrate 13 opposed to the cathode 20, and the alpha-Ta film is shaped through sputtering.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides α-
Method for producing Ta group 1% IIc α-T with excellent shielding properties, M
An example of how to generate IM is that a tantalum quaternary capacitor in a tantalum thin spread hybrid spear circuit is generally
As shown in the figure, a 12kg tantalum chloride tube type kite is placed on top of a glazed alumina base film, a lower electrode 13 made of a tantalum thin film is formed on top of the glazed alumina base film, and the upper layer of the lower electrode 3 is chemically formed. Nichrome (NiC) is applied through the dielectric layer 4t.
r) has a structure in which an upper electrode consisting of a gold (Au) layer 6 with a base layer 5 is provided
gonal) structure for β-T a M't
;b Since electrical properties such as electric tangent, temperature coefficient of capacitance, and insulation resistance are superior to those of 40, products using the former have come to be more commonly used. However, the sputtering speed is about an order of magnitude higher than that of the conventional iron cylinder of DC two-pole sputtering equipment, and it has the advantage of eliminating damage caused by electrons colliding with the sputtering substrate.◎Using magnetron sputtering equipment The produced α-Ta film has poor adhesion to the alumina substrate (sputtered substrate), so it is usually formed on the alumina oxide (TJig Om) as a base layer. The purpose of this is to eliminate the process by reducing the process to zero, and the purpose of this is to install tantalum at the cathode and to use a magnetron in which a mixed gas of argon gas and silicon gas is introduced.
α-Tag was generated by sputtering on a bonding substrate heated to 150 degrees Celsius or above in a tank of a sputtering device.・Hereinafter, the method of the present invention will be explained using FIG. 2 showing the schematic configuration of magnetron sputtering & AM11 according to an embodiment of the method of the present invention. 1112, a sputtered substrate 13 and a heater 1 protected by means not shown.
The tank 11 is equipped with O bubbles 15 to 17 and an exhaust pipe (not shown) for introducing argon gas and suffocating gas N3 forming a sputtering atmosphere into the tank 11.・The electrode 1s12 includes a plurality of O Mizuku Kamaishi 19 made of Nli with a center of 11K and a cathode (I-Gela>) 20 made of one tantalum, and #Ig arranged so as to surround the cathode 20. 20 is connected to a backing grate 24 with several screws 23, and the backing grate 24 is connected to the magnetic pole surface of each permanent magnet 19 with several mounting screws 25. α-Ta is applied to the surface of the sputtered substrate 130 (as shown in the figure) using
To deposit and produce a film - First, a mixture of argon gas and nitrogen gas O is placed in the tank 11, so that the partial pressure of nitrogen gas is approximately 10 ~
2011), a predetermined current is applied to the heater 14, and the temperature of the substrate 13 is detected by radiant heat in a thermocouple (not shown), and the substrate 13 is heated to over 1 soi Celsius. When a DC voltage of several tens of volts is applied to '22, an orthogonal electromagnetic space 1 created by the magnetic field from the permanent magnet 19 and a magnetic field on the surface of the cathode 200 is generated.
The charged particles wrapped around the magnetic field move violently and hit the cathode 2a with cyclomotion, knocking out tantalum atoms. As a result, the substrate 131011m facing the cathode 20
K is produced by sputtering of 1l-Ta, but as mentioned above, α-Tall deposited directly on a group Ill heated to 1501 degrees Celsius or above is produced by the conventional method, that is, by natural heating accompanied by stumbling. α-Ta deposited on a tantalum oxide film (No. 11102 tf) heated to about 80 degrees Celsius
As explained above, according to the method of the present invention, a base layer of α-Ta is formed so as to have an adhesion force equivalent to that of an α-Ta base layer. - The conventional process of depositing a T1 film and chemically converting the β-Ta film to form a tantalum oxide film is unnecessary; &1;
The effect is extremely large.

[Brief explanation of the drawing]

Figure 1 is a side cross section showing the typical conventional groove formation of a tantalum thin film capacitor formed on a glazed aluminum substrate O.
No. 211 is a side sectional view showing a schematic configuration of a sputtering apparatus with a sputtering device provided in a tank for implementing the present method. In the figure, 1 is a glazed substrate S2. is tantalum oxide film, 3 is tantalum I
The lower electrode of the capacitor is exposed from the I film, 4 is the tantalum dielectric layer, 11 is the magnetron sputtering loading O tank,
12 is a magnetone electrode section, 13 is a sputter substrate, 14
indicates a heater.

Claims (1)

[Claims] K a -TiI a on an insulating base made of ceramic ivy etc.
The 8U iron plate was made by using orthogonal electromagnetic fields, using tantalum VRT & keratin magnetron sputtering cylinder for the cathode, and introducing a mixed gas of argon gas and mA gas. Formation of α-Ti film using magnetron sputtering iron, which is heated to over 150 degrees Celsius in a chamber and sputtered onto an insulating substrate to form an α-Ta film with superior layer density to the substrate. Method.