JPS5856269B2 - charge coupled device - Google Patents
charge coupled deviceInfo
- Publication number
- JPS5856269B2 JPS5856269B2 JP14672678A JP14672678A JPS5856269B2 JP S5856269 B2 JPS5856269 B2 JP S5856269B2 JP 14672678 A JP14672678 A JP 14672678A JP 14672678 A JP14672678 A JP 14672678A JP S5856269 B2 JPS5856269 B2 JP S5856269B2
- Authority
- JP
- Japan
- Prior art keywords
- transfer
- charge
- coupled device
- channel
- adjacent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 238000003491 array Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
Description
【発明の詳細な説明】
本発明は電荷結合装置、とくに複数の蛇行状電荷転送路
を有する電荷結合装置の構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a charge coupled device, and more particularly to a structure of a charge coupled device having a plurality of serpentine charge transfer paths.
電荷結合装置ＣＣＤの一種として、櫛歯状のチャンネル
ストップを有するチャンネル内において蛇行状の経路に
沿って電荷を転送して行く形式のものがあり、この種の
電荷結合装置は、本出願人が先に出願した％開昭５２−
５５４７８号によりすでに周知である。One type of charge-coupled device CCD is one in which charges are transferred along a meandering path within a channel having comb-like channel stops. The first application was filed in 1977.
It is already known from No. 55478.
上述の従来の蛇行状チャンネルを有する電荷結合装置は
、第１図で示すごとく転送電極１，２の形状と構成が極
めて簡単である等多くの利点を有している。The conventional charge-coupled device having a meandering channel described above has many advantages, such as the extremely simple shape and construction of the transfer electrodes 1 and 2, as shown in FIG.
一方転送される電荷の転送速度および損失等の関係から
、転送方向に延びる２本の帯状チャンネルストップ３，
４と、櫛歯状の短いチャンネルストップ５ ａ’、 ５
ｂ、５ｃ・・・・・・および６ａ 、５ｂ 、６ｃ・・
・・・・によって画定された各セル？、８，９．１０・
・・・・・の形状は転送効率を考慮してほぼ正方形の構
造を用いている。On the other hand, due to the transfer speed and loss of charges, two strip channel stops 3 extending in the transfer direction,
4, and short comb-like channel stops 5 a', 5
b, 5c...and 6a, 5b, 6c...
Each cell defined by...? , 8, 9.10・
The shape of . . . uses an approximately square structure in consideration of transfer efficiency.
しかしながらこのような蛇行状電荷結合装置において、
信号転送電荷を増大して使用する場合があり、このよう
な多くの転送電荷量を無駄なく転送する転送チャンネル
を構成するとなると、該転送チャンネルを構成するセル
の形状を転送電荷量Ｊこ比例した面積形状とする必要か
ら装置全体が不当に増大するとともに、転送される電荷
の転送路も長くなり転送速度が低下するという不都合が
生ずる。However, in such a serpentine charge-coupled device,
In some cases, the signal transfer charge is increased and used, and in order to configure a transfer channel that transfers such a large amount of transfer charge without waste, the shape of the cell that makes up the transfer channel should be adjusted in proportion to the transfer charge amount J. Due to the need for an area shape, the overall size of the device is unduly increased, and the transfer path for transferred charges is also lengthened, resulting in a reduction in transfer speed.
本発明は上述の問題点を解決せんとするもので、電荷転
送路を構成する１つのセル面積を増大することなく、多
量の電荷を効率よく転送する構造を提供せんとするもの
で、かかる目的を達成するため、それぞれ転送方向に延
びる２条の帯状の転送電極で覆われた蛇行状の転送チャ
ンネルを具えた電荷転送路を少なくとも２つ並設してな
る電荷結合装置において、隣接した各転送路の各対応し
たセルで共通の１セルを構成したことを特徴としている
。The present invention aims to solve the above-mentioned problems, and aims to provide a structure that can efficiently transfer a large amount of charge without increasing the area of one cell constituting a charge transfer path. In order to achieve this, in a charge-coupled device in which at least two charge transfer paths each having a meandering transfer channel covered with two strip-shaped transfer electrodes extending in the transfer direction are arranged in parallel, each adjacent transfer It is characterized in that each corresponding cell on the road constitutes one common cell.
以下本発明の一実施例を図面を用いて詳細に説明する。An embodiment of the present invention will be described in detail below with reference to the drawings.
第２図は本発明に係る電荷結合装置の一実施例を上面図
で示したものである。FIG. 2 shows a top view of an embodiment of a charge-coupled device according to the present invention.
図において２条の帯状チャンネルストップ１１゜１２に
挾まれたシリコン基板表面が電荷転送領域であり、さら
に該帯状チャンネルストップ１１゜１２から上記転送領
域の中央に向かって櫛歯状に突出する短いチャンネルス
トップ１３ａ 、１３ｂ。In the figure, the surface of the silicon substrate sandwiched between two band-shaped channel stops 11° 12 is a charge transfer region, and short channels protrude from the band-shaped channel stops 11° 12 toward the center of the transfer region in a comb-like shape. Stops 13a, 13b.
１３ｃ・・・・・・および１４ａ、１４ｂ、１４ｃ・・
・・・・と、該短いチャンネルストップ間の中央に短冊
形島状のチャンネルストップ１５ａ、１５ｂ、１５ｃ・
・・・・を配夕１ルて電荷転送領域内に２つの蛇行状の
電荷通路が形成されている。13c...and 14a, 14b, 14c...
..., and rectangular island-shaped channel stops 15a, 15b, 15c in the center between the short channel stops.
Two serpentine charge paths are formed in the charge transfer region by arranging...
上記電荷転送領域内において斜線を付した電荀障壁部２
２ａ、２３ａ、２４ａ。Charge barrier section 2 with diagonal lines in the charge transfer region
2a, 23a, 24a.
２４ａ’、２５ａ、２６ａ・・・・・・はイオン注入法
等によって基板表層に該基板と同一導電型を与える不純
物をドープして、この部位下に生ずる電位の井戸の深さ
が非ドープ部位の蓄積部２１ｂ、２２ｂ。24a', 25a, 26a, etc. are doped with an impurity that gives the same conductivity type as the substrate to the surface layer of the substrate by ion implantation, etc., and the depth of the potential well generated under these areas is the undoped area. storage units 21b and 22b.
２３ｂ・・・・・・よりも浅くなるようにして転送電荷
の移動方向を特定している。23b... The moving direction of the transferred charges is specified so that it becomes shallower than 23b.
そして転送領域内で相隣る２本の短いチャンネルストッ
プ、たとえば１３ａと１３ｂとに挾まれた領域、および
短冊形島状のチャンネルストップ１５ａと１５ｂとに挾
まれた領域をセルと呼び、各セルには転送方向へ順に２
１．２２，２３，２４と符号を付す。In the transfer area, an area sandwiched between two adjacent short channel stops, for example 13a and 13b, and an area sandwiched between rectangular island-shaped channel stops 15a and 15b are called cells, and each cell 2 in order in the transfer direction.
1. Labeled with 22, 23, 24.
上述の電荷転送領域には図示していない絶縁膜を介して
転送電極φ１．φ２が設けられ、該転送電極は帯状をな
し転送方向へ、たとえば転送路Ｃ２Ｄの隣接転送電極を
共用して転送電極φ２を中央に、その両側に転送電極φ
、を１本ずつ配設して構成されている。In the charge transfer region described above, transfer electrodes φ1. φ2 is provided, and the transfer electrode has a band shape in the transfer direction, for example, adjacent transfer electrodes of the transfer path C2D are shared, with transfer electrode φ2 in the center, and transfer electrodes φ on both sides thereof.
, are arranged one by one.
したがって第２図の実施例においては、従来の蛇行状転
送チャンネルの片側に、すなわち中心線Ａを境として、
もう一つの転送チャンネルを対称的に並設し、この隣接
部、つまり中心線Ａ部分にあるべき帯状チャンネルスト
ップをのぞいた形とし各転送路が連通し、全体で一つの
蛇行状電荷結合装置を構成することになる。Therefore, in the embodiment of FIG.
Another transfer channel is arranged symmetrically in parallel, except for the band-shaped channel stop that should be in the adjacent part, that is, in the centerline A part, so that each transfer channel communicates with the other, forming one meandering charge-coupled device as a whole. It will be configured.
このように構成された電荷転送通路内において電荷を転
送するには、転送電極φ０．φ２に２相転送（またはク
ロック）電圧を加えて転送チャンネルに多量の電荷ｅを
入力し、たとえば今セル２１に蓄積されている多量の電
荷ｅは転送電極φ２の電位を零とし同時に転送電極φ１
に転送電圧を印加すると、電荷ｅはセル２１から２分割
されてセル２２および２３の障壁部２２ａおよび２３ａ
下の浅い電位の井戸へ移動した後、直ちに蓄積部２２ｂ
および２３ｂ下の深い電位の井戸へ流入する。To transfer charges within the charge transfer path configured in this manner, transfer electrodes φ0. A two-phase transfer (or clock) voltage is applied to φ2 to input a large amount of charge e into the transfer channel. For example, the large amount of charge e currently stored in cell 21 causes the potential of transfer electrode φ2 to become zero, and at the same time transfers the potential of transfer electrode φ1 to zero.
When a transfer voltage is applied to the cell 21, the charge e is divided into two parts and transferred to the barrier parts 22a and 23a of the cells 22 and 23.
After moving to the shallow potential well below, the storage portion 22b immediately
and flows into the deep potential well below 23b.
以下同様の動作を繰返すことによって転送速度を低下す
ることなく少なくとも従来の２俄咬相相する電荷量を矢
印５で示す方向へ効率よく転送することが可能になる。Thereafter, by repeating the same operation, it becomes possible to efficiently transfer at least the conventional two-phase charge amount in the direction shown by the arrow 5 without reducing the transfer speed.
なお本実施例では２つの転送チャンネルを一体化した構
造の蛇行状ＣＣＤの例の場合で説明したが、本発明はこ
の例に限定するものではなく、第３図で示すように中心
線ＡおよびＢを境にして蛇行状の転送チャンネル３１．
３２，３３の３転送チヤンネルをそれぞれ対称的に並設
し、各電荷転送路を連通した構造とし、しかも中央の転
送電極φ３．φ２を共用電極とし全体として一つの蛇行
状電荷結合装置として構成することにより、電荷の転送
速度を低下させずに、少なくとも従来の３倍に相当する
電荷を前記第２図の実施例で説明したごとく矢印５で示
す方向へ転送することが可能である。Although this embodiment has been explained using an example of a meandering CCD having a structure in which two transfer channels are integrated, the present invention is not limited to this example, and as shown in FIG. A meandering transfer channel 31.
Three transfer channels 32 and 33 are arranged symmetrically in parallel, and each charge transfer path is communicated with each other, and the central transfer electrode φ3. By using φ2 as a common electrode and configuring the entire device as one meandering charge coupling device, the charge equivalent to at least three times the conventional charge can be transferred without reducing the charge transfer speed as explained in the embodiment of FIG. 2 above. It is possible to transfer the information in the direction shown by arrow 5.
さらに４転送チヤンネル・・・・・・ｎ転送チャンネル
を一体化した構成の蛇行状ＣＣＤとして適用可能なこと
はいうまでもない。Furthermore, it goes without saying that the present invention can be applied as a meandering CCD having a configuration in which four transfer channels...n transfer channels are integrated.
以上の説明から明らかなように本発明に係る電荷結合装
置は、電荷転送領域を構成するセルの面積を増大するこ
となく、複数の転送チャンネルを一体化して複数の連通
ずる電荷転送路を構成することにより、多量の転送電荷
を転送速度を低下させずに効率よく転送することが可能
となる。As is clear from the above description, the charge-coupled device according to the present invention integrates a plurality of transfer channels to form a plurality of communicating charge transfer paths without increasing the area of cells forming the charge transfer region. This makes it possible to efficiently transfer a large amount of transfer charges without reducing the transfer speed.
また転送電極の一部が共用できること、さらに転送領域
内の帯状チャンネルストップが不要となり製作工程の簡
易化等の優れた利点があり、入力係数型ＣＣＤフィルタ
等に応用して極めて有利である。Further, there are excellent advantages such as a part of the transfer electrode can be shared, and a band-shaped channel stop in the transfer region is not required, simplifying the manufacturing process, and it is extremely advantageous when applied to input coefficient type CCD filters and the like.
第１図は従来の蛇行状電荷結合装置の構造を示す上面図
、第２図および第３図は本発明に係る電荷結合装置を説
明する実施例の構造を示す上面図である。
１１．１２：帯状チャンネルストップ、１３ａ。
１３ｂ 、 １３ｃ・−−−および１４ａ 、 １４ｂ
、１４ｃ・・・・・・：短いチャンネルストップ、１
５ａｔ１５ｂ＋１５ｃ・・・・・・：短冊形島状チャン
ネルストップ、２Ｌ２２，２３・・・・・・：セル、２
２ａ 、２３ａ 。
２４ａ、２４ａ’、２５ａ、２６ａ・・・・・・：障壁
部、２１ｂ、２２ｂｔ２３ｂ・・・・・・：蓄積部、φ
、φ２：転送電極、３１，３２，３３：転送チャンネル
。FIG. 1 is a top view showing the structure of a conventional serpentine charge coupled device, and FIGS. 2 and 3 are top views showing the structure of an embodiment of the charge coupled device according to the present invention. 11.12: Banded channel stop, 13a. 13b, 13c・--- and 14a, 14b
, 14c...: short channel stop, 1
5at15b+15c...: Rectangular island channel stop, 2L22, 23...: Cell, 2
2a, 23a. 24a, 24a', 25a, 26a...: Barrier section, 21b, 22bt23b...: Accumulation section, φ
, φ2: transfer electrode, 31, 32, 33: transfer channel.
Claims (1)
た２本の帯状転送電極下の半導体基板面に、該電極の延
長方向と直交する方向をもって各電極対応に互い違いと
なるよう所定間隔で形成した複数個の短いチャンネルス
トップを有し、各帯状転送電極下で互いに隣接する短い
チャンネルストップ相互間に定まる２列のセル配列に交
互にまたがって蛇行状チャンネルを構成した転送路を少
なくとも２つ並設し、かつ両転送路の互いに隣接したセ
ル配列の各対応したセルを互いに連通させて共通の１セ
ルを構成するとともに、当該隣接したセル配列に対応す
る帯状転送電極を共通に配設してなることを特徴とする
電荷結合装置。1 Formed on the semiconductor substrate surface under two strip-shaped transfer electrodes arranged adjacent to each other and extending in the charge transfer direction, at predetermined intervals in a direction perpendicular to the direction of extension of the electrodes so as to be staggered for each electrode. At least two transfer paths are arranged in parallel, each having a plurality of short channel stops arranged under each strip-shaped transfer electrode, and alternately spanning two rows of cell arrays defined between adjacent short channel stops to form a meandering channel. The corresponding cells of the adjacent cell arrays of both transfer paths are communicated with each other to form one common cell, and strip-shaped transfer electrodes corresponding to the adjacent cell arrays are commonly disposed. A charge-coupled device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14672678A JPS5856269B2 (en) | 1978-11-27 | 1978-11-27 | charge coupled device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14672678A JPS5856269B2 (en) | 1978-11-27 | 1978-11-27 | charge coupled device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5572075A JPS5572075A (en) | 1980-05-30 |
| JPS5856269B2 true JPS5856269B2 (en) | 1983-12-14 |
Family
ID=15414171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14672678A Expired JPS5856269B2 (en) | 1978-11-27 | 1978-11-27 | charge coupled device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856269B2 (en) |
-
1978
- 1978-11-27 JP JP14672678A patent/JPS5856269B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5572075A (en) | 1980-05-30 |
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