JPS5853823A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5853823A
JPS5853823A JP56152680A JP15268081A JPS5853823A JP S5853823 A JPS5853823 A JP S5853823A JP 56152680 A JP56152680 A JP 56152680A JP 15268081 A JP15268081 A JP 15268081A JP S5853823 A JPS5853823 A JP S5853823A
Authority
JP
Japan
Prior art keywords
single crystal
oxide film
silicon layer
polycrystalline silicon
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56152680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6351370B2 (enrdf_load_stackoverflow
Inventor
Seiichiro Kawamura
河村　誠一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56152680A priority Critical patent/JPS5853823A/ja
Publication of JPS5853823A publication Critical patent/JPS5853823A/ja
Publication of JPS6351370B2 publication Critical patent/JPS6351370B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
JP56152680A 1981-09-26 1981-09-26 半導体装置の製造方法 Granted JPS5853823A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56152680A JPS5853823A (ja) 1981-09-26 1981-09-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56152680A JPS5853823A (ja) 1981-09-26 1981-09-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5853823A true JPS5853823A (ja) 1983-03-30
JPS6351370B2 JPS6351370B2 (enrdf_load_stackoverflow) 1988-10-13

Family

ID=15545760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56152680A Granted JPS5853823A (ja) 1981-09-26 1981-09-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5853823A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193022A (ja) * 1983-04-15 1984-11-01 Sony Corp 薄膜の加熱方法
JPS63215035A (ja) * 1987-03-04 1988-09-07 Agency Of Ind Science & Technol 再結晶化処理用保護膜
JPS6423521A (en) * 1987-07-20 1989-01-26 Agency Ind Science Techn Protective film for recrystallization treatment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193022A (ja) * 1983-04-15 1984-11-01 Sony Corp 薄膜の加熱方法
JPS63215035A (ja) * 1987-03-04 1988-09-07 Agency Of Ind Science & Technol 再結晶化処理用保護膜
JPS6423521A (en) * 1987-07-20 1989-01-26 Agency Ind Science Techn Protective film for recrystallization treatment

Also Published As

Publication number Publication date
JPS6351370B2 (enrdf_load_stackoverflow) 1988-10-13

Similar Documents

Publication Publication Date Title
JP2000119096A (ja) シリコン上にアルカリ土類金属シリサイドを形成する方法
JPS58127318A (ja) 絶縁層上への単結晶膜形成方法
JPS5853823A (ja) 半導体装置の製造方法
US4565599A (en) Graphoepitaxy by encapsulation
JPS6046539B2 (ja) シリコン結晶膜の製造方法
JP2817613B2 (ja) 結晶シリコン膜の形成方法
JPS5853824A (ja) 半導体装置の製造方法
JPH01248511A (ja) 多結晶膜の形成方法
JPS5983993A (ja) 単結晶半導体層の成長方法
US20180090523A1 (en) Ultraviolet (uv) schottky diode detector having single crystal uv radiation detector material bonded directly to a support structure with proper c-axis orientation
JPS6185815A (ja) 多結晶シリコン膜の形成方法
JPS6347255B2 (enrdf_load_stackoverflow)
JPH07106246A (ja) 多結晶シリコン薄膜の形成方法
JPS6126598A (ja) ゲルマニウム薄膜結晶の製造方法
JP2532252B2 (ja) Ｓｏｉ基板の製造方法
JPS59158515A (ja) 半導体装置の製造方法
JPH03138925A (ja) 半導体膜の結晶化法
JP2993107B2 (ja) 半導体薄膜の製造方法
JPS61179523A (ja) 単結晶薄膜形成方法
JPH02105517A (ja) 半導体装置の製造方法
JPS6234716B2 (enrdf_load_stackoverflow)
JPS63232311A (ja) 半導体薄膜の製造方法
JPH01297814A (ja) 単結晶薄膜の製造方法
JPS5856412A (ja) 半導体装置の製造方法
JPH03286520A (ja) 結晶性半導体薄膜の製造方法