JPS58500634A - 半導体表面上への金属の放射線誘起堆積 - Google Patents

半導体表面上への金属の放射線誘起堆積

Info

Publication number
JPS58500634A
JPS58500634A JP57501693A JP50169382A JPS58500634A JP S58500634 A JPS58500634 A JP S58500634A JP 57501693 A JP57501693 A JP 57501693A JP 50169382 A JP50169382 A JP 50169382A JP S58500634 A JPS58500634 A JP S58500634A
Authority
JP
Japan
Prior art keywords
solution
radiation
inp
platinum
further characterized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57501693A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0454372B2 (OSRAM
Inventor
ドネリ−・ヴインセント・マイケル
カ−リセク・ロバ−ト・フランク・ジユニヤ
Original Assignee
ウエスタ−ン　エレクトリツク　カムパニ−，インコ−ポレ−テツド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ウエスタ−ン　エレクトリツク　カムパニ−，インコ−ポレ−テツド filed Critical ウエスタ−ン　エレクトリツク　カムパニ−，インコ−ポレ−テツド
Publication of JPS58500634A publication Critical patent/JPS58500634A/ja
Publication of JPH0454372B2 publication Critical patent/JPH0454372B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/46—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/094—Laser beam treatment of compound devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
JP57501693A 1981-05-01 1982-04-16 半導体表面上への金属の放射線誘起堆積 Granted JPS58500634A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25942812EGB 1981-05-01
US06/259,428 US4359485A (en) 1981-05-01 1981-05-01 Radiation induced deposition of metal on semiconductor surfaces

Publications (2)

Publication Number Publication Date
JPS58500634A true JPS58500634A (ja) 1983-04-21
JPH0454372B2 JPH0454372B2 (OSRAM) 1992-08-31

Family

ID=22984907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57501693A Granted JPS58500634A (ja) 1981-05-01 1982-04-16 半導体表面上への金属の放射線誘起堆積

Country Status (7)

Country Link
US (1) US4359485A (OSRAM)
EP (1) EP0077814B1 (OSRAM)
JP (1) JPS58500634A (OSRAM)
CA (1) CA1186601A (OSRAM)
DE (1) DE3276746D1 (OSRAM)
GB (1) GB2097820B (OSRAM)
WO (1) WO1982003801A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04362178A (ja) * 1990-12-29 1992-12-15 Abb Patent Gmbh 完全または部分的被覆金層の製造方法

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864368A (ja) * 1981-10-12 1983-04-16 Inoue Japax Res Inc 化学メツキ方法
US4615904A (en) * 1982-06-01 1986-10-07 Massachusetts Institute Of Technology Maskless growth of patterned films
WO1983004269A1 (en) * 1982-06-01 1983-12-08 Massachusetts Institute Of Technology Maskless growth of patterned films
US4555301A (en) * 1983-06-20 1985-11-26 At&T Bell Laboratories Formation of heterostructures by pulsed melting of precursor material
US4645687A (en) * 1983-11-10 1987-02-24 At&T Laboratories Deposition of III-V semiconductor materials
US4496607A (en) * 1984-01-27 1985-01-29 W. R. Grace & Co. Laser process for producing electrically conductive surfaces on insulators
US4538342A (en) * 1984-06-15 1985-09-03 At&T Bell Laboratories Forming platinum contacts to in-based group III-V compound devices
EP0168771A1 (de) * 1984-07-17 1986-01-22 Siemens Aktiengesellschaft Verfahren zur gezielten Erzeugung von lateralen Dotierungs-gradienten in scheibenförmigen Siliziumkristallen für Halbleiterbauelemente
US4649059A (en) * 1985-05-29 1987-03-10 The United States Of America As Represented By The Secretary Of The Air Force Photoionization technique for growth of metallic films
US4910049A (en) * 1986-12-15 1990-03-20 International Business Machines Corporation Conditioning a dielectric substrate for plating thereon
US4888203A (en) * 1987-11-13 1989-12-19 Massachusetts Institute Of Technology Hydrolysis-induced vapor deposition of oxide films
DE3744368C1 (de) * 1987-12-29 1989-08-03 Schott Glaswerke Verfahren zur Herstellung von festen optischen Einfach- und Mehrfach-Interferenz-Schichten
US5310624A (en) * 1988-01-29 1994-05-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
GB2215122A (en) * 1988-02-12 1989-09-13 Philips Electronic Associated A method of forming a quantum dot structure
US4938996A (en) * 1988-04-12 1990-07-03 Ziv Alan R Via filling by selective laser chemical vapor deposition
US4925830A (en) * 1988-04-14 1990-05-15 Tracer Technologies, Inc. Laser based method for forming a superconducting oxide layer on various substrates
US5015603A (en) * 1988-06-17 1991-05-14 The United States Of America As Represented By The Secretary Of The Navy TiW diffusion barrier for AuZn ohmic contact to P-Type InP
US5171709A (en) * 1988-07-25 1992-12-15 International Business Machines Corporation Laser methods for circuit repair on integrated circuits and substrates
US5182230A (en) * 1988-07-25 1993-01-26 International Business Machines Corporation Laser methods for circuit repair on integrated circuits and substrates
US4888204A (en) * 1988-09-12 1989-12-19 Hughes Aircraft Company Photochemical deposition of high purity gold films
US5236874A (en) * 1991-03-08 1993-08-17 Motorola, Inc. Method for forming a material layer in a semiconductor device using liquid phase deposition
JPH05148657A (ja) * 1991-10-04 1993-06-15 Toyota Central Res & Dev Lab Inc 光利用めつき液およびめつき方法
US5874011A (en) * 1996-08-01 1999-02-23 Revise, Inc. Laser-induced etching of multilayer materials
US6674058B1 (en) 2000-09-20 2004-01-06 Compucyte Corporation Apparatus and method for focusing a laser scanning cytometer
US6937350B2 (en) * 2001-06-29 2005-08-30 Massachusetts Institute Of Technology Apparatus and methods for optically monitoring thickness
MY184648A (en) * 2003-12-12 2021-04-14 Lam Res Corp Method and apparatus for material deposition
US7358186B2 (en) * 2003-12-12 2008-04-15 Lam Research Corporation Method and apparatus for material deposition in semiconductor fabrication
EP2009143B1 (en) * 2007-05-08 2017-08-09 Imec Bipolar electroless deposition method
WO2010105187A1 (en) * 2009-03-12 2010-09-16 Daimler Ag Platinum phosphide as a cathode catalyst for pemfcs and phosphorous treatment of catalysts for fuel cell
US10022973B2 (en) * 2009-05-18 2018-07-17 Hewlett Packard Development Company, L.P. Remote ink supply
JP2011111355A (ja) * 2009-11-25 2011-06-09 Ricoh Co Ltd 薄膜製造方法および薄膜素子
US20110123728A1 (en) * 2009-11-25 2011-05-26 Ricoh Company, Ltd. Thin film manufacturing method and thin film element
US11932929B2 (en) * 2017-08-21 2024-03-19 George Edward Parris Method and materials for creating patterns of carbon and/or other elements on substrates or within liquid or frozen media by directed energy deposition of carbon and other elements

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5092830A (OSRAM) * 1973-12-20 1975-07-24

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2723919A (en) * 1951-11-29 1955-11-15 Mildred M Jackson Photochemical mirroring process
US4009297A (en) * 1974-02-25 1977-02-22 Amp Incorporated Gold deposition procedures and substrates upon which gold has been deposited
US4239789A (en) * 1979-05-08 1980-12-16 International Business Machines Corporation Maskless method for electroless plating patterns
US4264421A (en) * 1979-05-30 1981-04-28 Board Of Regents, University Of Texas System Photocatalytic methods for preparing metallized powders
US4273594A (en) * 1979-10-05 1981-06-16 Bell Telephone Laboratories, Incorporated Gallium arsenide devices having reduced surface recombination velocity
US4321283A (en) * 1979-10-26 1982-03-23 Mobil Tyco Solar Energy Corporation Nickel plating method
US4297393A (en) * 1980-02-28 1981-10-27 Rca Corporation Method of applying thin metal deposits to a substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5092830A (OSRAM) * 1973-12-20 1975-07-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04362178A (ja) * 1990-12-29 1992-12-15 Abb Patent Gmbh 完全または部分的被覆金層の製造方法

Also Published As

Publication number Publication date
CA1186601A (en) 1985-05-07
US4359485A (en) 1982-11-16
EP0077814B1 (en) 1987-07-15
WO1982003801A1 (en) 1982-11-11
JPH0454372B2 (OSRAM) 1992-08-31
EP0077814A1 (en) 1983-05-04
EP0077814A4 (en) 1983-09-02
DE3276746D1 (en) 1987-08-20
GB2097820B (en) 1985-08-14
GB2097820A (en) 1982-11-10

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