JPS58500092A - Variable temperature coefficient level shifter - Google Patents

Variable temperature coefficient level shifter

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Publication number
JPS58500092A
JPS58500092A JP50077882A JP50077882A JPS58500092A JP S58500092 A JPS58500092 A JP S58500092A JP 50077882 A JP50077882 A JP 50077882A JP 50077882 A JP50077882 A JP 50077882A JP S58500092 A JPS58500092 A JP S58500092A
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Prior art keywords
temperature coefficient
current
voltage
supply voltage
voltage terminal
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JP50077882A
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JPH0664504B2 (en
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バイナム・バイロン・ジ−
グレイ・ランダ−ル・シ−
ジヤレツト・ロバ−ト・ビ−
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モトロ−ラ・インコ−ポレ−テッド
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Abstract

(57)【要約】本公報は電子出願前の出願データであるため要約のデータは記録されません。 (57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 可変温度係数レベルシフタ 発明の背景 発明の分野 本発明は、一般的には電圧レベルシフタに関するものであり、更に具体的に云う と個々に別々に制御可能な温度係数および振幅を有する電圧を発生させるための 回路に関する。[Detailed description of the invention] Variable temperature coefficient level shifter Background of the invention field of invention TECHNICAL FIELD This invention relates generally to voltage level shifters, and more particularly to voltage level shifters. and for generating voltages with individually controllable temperature coefficients and amplitudes. Regarding circuits.

先行技術の説明 零温度係数を有する出力電流又は電圧を提供する必要がしばしばあり、これを達 成するための回路は周知である。例えば“固体調整電圧源”と題する米国特許第 ３，８８７，８６３号、“零温度係数電圧基準回路を含む電気調整器装置”と題 する米国特許１３，６１７．ｓｓ９号および“補償電子電圧源”と題する米国特 許Ｚ　３，８９３，０１８号を参照されたい。それらの回路は一般的に云って１ つのトランジスタのベース−エミッタ電圧（ｖＢＥ）の負の温度係数を１対のト ランジスタ間のベース−エミッタ電圧差（ΔｖＢＥ）から誘導される正の温度係 数で補っている。この先行技術に伴う問題の１つは、出力に導入される負の温度 係数の量が単一のｖＢＥによって著しく制限されることである。Description of prior art It is often necessary to provide an output current or voltage with a zero temperature coefficient, and it is difficult to achieve this. Circuits for achieving this are well known. For example, US Patent No. 1 entitled “Solid State Regulated Voltage Source” No. 3,887,863, entitled "Electrical Regulator Apparatus Including Zero Temperature Coefficient Voltage Reference Circuit." U.S. Patent No. 13,617. ss9 and the US patent entitled “Compensated Electronic Voltage Source”. See No. 3,893,018. Generally speaking, those circuits are 1 The negative temperature coefficient of the base-emitter voltage (vBE) of one transistor is Positive temperature coefficient induced from base-emitter voltage difference (ΔvBE) between transistors It is supplemented by numbers. One of the problems with this prior art is the negative temperature introduced to the output. The amount of coefficients is significantly limited by a single vBE.

発明の要約 本発明の目的は、制御可能な温度係数ををし、安定した。別個に制御可能なレベ ルシフティング電圧振幅を発生させる電圧レベルシフティング回路を提供するこ とである。Summary of the invention The object of the invention is to have a controllable and stable temperature coefficient. Separately controllable levels providing a voltage level shifting circuit that generates a voltage level shifting circuit; That is.

本発明のもう１つの目的は、制御可能な温度係数を有し、その出力に結合した。Another object of the invention is to have a controllable temperature coefficient coupled to its output.

又はその出力に関連した回路によって影響されない別個に制御可能なシフト振幅 を有する電圧レベルシフティング回路を提供することである。or a separately controllable shift amplitude unaffected by the circuitry associated with that output. An object of the present invention is to provide a voltage level shifting circuit having the following features.

本発明の更にもう１つの目的は、制御可能な温度係数を有し１乗算又は抵抗分圧 器の使用を必要としない別個に制御可能なシフト振幅を有する電圧レベルシフテ ィング回路を提供することである。Yet another object of the invention is to have a controllable temperature coefficient and a single multiplier or resistive voltage divider. Voltage level shifter with separately controllable shift amplitude that does not require the use of The purpose of this invention is to provide a switching circuit.

本発明の第１の側面によると、第１供給電圧端子と、第２供給電圧端子と、前記 第１供給電圧端子に結合され、正の温度係数を有する第１電流を発生させる第１ 電流源と、前記第１供給電圧端子に結合され、負の温度係数を有する第２電流を 発生させる第２電流源と。According to a first aspect of the invention, the first supply voltage terminal, the second supply voltage terminal, and the a first current coupled to the first supply voltage terminal and generating a first current having a positive temperature coefficient; a current source and a second current coupled to the first supply voltage terminal and having a negative temperature coefficient; and a second current source for generating.

前記第１．第２電流源と前記第２供給電圧端子との間に結合され。Said 1st. coupled between a second current source and the second supply voltage terminal.

前記第１および第２電流を結合して前記所望の温度係数に対応する正味温度係数 を有する第３電流を発生させ、前記正味温度係数と前記所望の振幅を有する電圧 を前記第３電流から発生させる第１抵抗手段とを含む、所望の振幅および温度係 数を有する出力電圧を生じさせるためのレベルシフト回路が提供されている。a net temperature coefficient of combining the first and second currents corresponding to the desired temperature coefficient; generating a third current having said net temperature coefficient and said voltage having said desired amplitude; a first resistance means for generating from said third current a desired amplitude and temperature coefficient. A level shifting circuit is provided for producing an output voltage having a number of output voltages.

本発明のもう１つの側面によると、正の温度係数を有する第１電流を発生させ、 負の温度係数を有する第２電流を発生させ、前記第１および第２電流の絶対値を 変化させて正味の負、零又は正温度係数を達成し、その抵抗が必要とされるレベ ルシフトを生じさせるように選択されている第１抵抗手段に前記第１および第２ 電流の和を印加することを含む、電圧をレベルシフトするための方法が提供され ており、レベルシフトの振幅およびその温度係数は別々に制御することが可能で ある。According to another aspect of the invention, generating a first current having a positive temperature coefficient; generating a second current having a negative temperature coefficient, and determining the absolute value of the first and second currents; be varied to achieve a net negative, zero or positive temperature coefficient and its resistance to the required level. said first and second resistance means being selected to cause a shift. A method is provided for level shifting a voltage, including applying a sum of currents. The amplitude of the level shift and its temperature coefficient can be controlled separately. be.

図面の簡単な説明 本発明の上述した目的およびその他の目的、特徴および長所は。Brief description of the drawing The above objects and other objects, features and advantages of the present invention are as follows.

添付した図面ならびに下記の詳細な説明がら更に明確に理解される。It will be more clearly understood from the accompanying drawings as well as the detailed description below.

添付した図面の唯一の図は１本発明を部分的にはブロック図で、一部を概略図で 示したものである。The only figure in the attached drawings depicts the invention partly in block diagram form and partly in schematic form. This is what is shown.

好ましい実施例の説明 図に示しである本発明の配置は、大地およびノード４，６にそれこのノード２か ら回路出力が取出される。図示されているようにノＶＢＥは１対のトランジスタ 間のベース−エミッタ電圧差であり正の温度係数を有する。これらの電圧を発生 させるための回路は周知であり、これ以上の説明はここでは必要ないと思われる 。しかし、関心のある当業者は上記に引用した米国特許第３．８８７，８６３号 を参照されたい。抵抗殊　、ＲＰおよびＲｓは集積回路チップの内部にあっでも よく、又はその外部にあってもよい。Description of the preferred embodiment The arrangement of the invention shown in the figure is such that the ground and nodes 4 and 6 have their respective nodes 2 and The circuit output is taken out from the circuit. As shown, VBE is a pair of transistors. It has a positive temperature coefficient. generate these voltages The circuit to do this is well known and no further explanation seems necessary here. . However, those skilled in the art who are interested in the above-cited U.S. Pat. No. 3,887,863 Please refer to Resistors RP and Rs can be inside the integrated circuit chip. It may be well or external to it.

ノード４にｖＢＥが現れると、ＲＮを流れる電流は負の温度係数と値ｖＢＥ／Ｒ Ｎを有する。同様な方法で、Δ”ＢＥがノード６に現れると。When vBE appears at node 4, the current flowing through RN has a negative temperature coefficient and the value vBE/R. It has N. In a similar manner, when Δ”BE appears at node 6.

ΔｖＢＥ／Ｒ９に等しい。この電流はそれに関連した正味温度係数を有し、この 係数は抵抗ＲＮとＲＰを適当に選択することによって制御される。例えば、ＲＮ が開いていると（無限インピーダンス）。Equal to ΔvBE/R9. This current has a net temperature coefficient associated with it, and this The coefficient is controlled by appropriate selection of resistors RN and RP. For example, R.N. is open (infinite impedance).

■ＣＮＴの温度係数は完全にΔ”ＢＥ酸成分よることになり従って正となる。他 方、Ｒが開いていると”　ＣＮＴの温度係数は一項によることになり従って負と なる。従ってＲおよびＲを適当にスケＮ　Ｐ −ルすることによッテ、■ｏＮＴノ温度係数は約−２８００ｐｐｍと＋３０００ ｐｐｍとの間で変えられる。■The temperature coefficient of CNT depends entirely on the Δ”BE acid component and is therefore positive.Others On the other hand, if R is open, the temperature coefficient of CNT depends on one term, so it is negative. Become. Therefore, scale R and R appropriately.NP -The temperature coefficient of oNT is approximately -2800ppm and +3000ppm. It can be changed between ppm and ppm.

さて温度係数が何らかの所望の値にセットされたとすると、ノード２に現れるレ ベルシフトの振幅値（ｍａｇｎｉｔｕｄｅ　）は抵抗Ｒ８を適当に選択すること によって何らかの所望の振幅値にセットすることができる。Ｒ５両端の電圧降下 は今や制御電流Ｉ。ＮＴ　に与えられるのと同じ関連温度係数を有したことにな る。従って、制御可能な温度係数および別個に制御される振幅を有する電圧源が つくられたことになる。即ち、ＲおよびＲＰを選択することによって温度係数が 制御され、Ｒ８を選択することによってシフトの振幅値が制御される。Now, if the temperature coefficient is set to some desired value, the value appearing at node 2 is The amplitude value (magnitude) of the bell shift should be determined by appropriately selecting the resistor R8. can be set to any desired amplitude value by Voltage drop across R5 is now the control current I. It has the same associated temperature coefficient as given to NT. Ru. Therefore, a voltage source with a controllable temperature coefficient and a separately controlled amplitude is It means that it was created. That is, by selecting R and RP, the temperature coefficient The amplitude value of the shift is controlled by selecting R8.

図に示した配置のいくつかの利点に注目すべきである。第１に。Several advantages of the arrangement shown in the figure should be noted. Firstly.

レベルシフトの振幅をセントするのは抵抗の比のみであって、抵抗の絶対値では ない。この結果、普通の抵抗プロセッシングを用いて抵抗が作られている限りに おいては抵抗許容誤差要件を減少する。Only the ratio of the resistances determines the amplitude of the level shift; the absolute value of the resistances determines the amplitude of the level shift. do not have. As a result, as long as the resistor is made using ordinary resistor processing, reduces resistance tolerance requirements.

例えば、ＲＮおよびＲＰＯ値が高ければ電流は低くなる。しかし。For example, the higher the RN and RPO values, the lower the current. but.

Ｒ８の値もまた高くなるので、その結果体じるレベルシフトは同じになる。第２ に、抵抗Ｒ８両端のレベルシフト電圧は、供給電圧■＋の変動に関係なく一定で ある。Since the value of R8 is also higher, the resulting level shift experienced is the same. Second In addition, the level shift voltage across resistor R8 is constant regardless of fluctuations in the supply voltage be.

上述の説明は例としてあげたにすぎない。適業技術者は本発明の範囲を逸脱する ことなく形式および詳細の変更を行うことができる。The above description is given by way of example only. It is beyond the scope of this invention for a person skilled in the art to do so. Changes in format and details can be made without any changes.

補正書の翻訳文提出書（特許法第１８４条７の第１項）昭和５７年１り月／工日 特許庁長官　若　杉　和　夫　殿 １、特許出願の表示 国際出願番号　ＰＣＴ／ＬＩＳ　８２１０　Ｏ１００２、発明の名称 可変温度係数レベルシフタ ３、特許出願人 住所　アメリカ合衆国イリノイ州６０１９６．シャンバーブ。Submission of translation of written amendment (Article 184, Paragraph 7, Paragraph 1 of the Patent Act) January 1980/Working day Mr. Kazuo Wakasugi, Commissioner of the Patent Office 1. Display of patent application International application number PCT/LIS 8210 O1002, title of invention Variable temperature coefficient level shifter 3. Patent applicant Address: 60196, Illinois, USA. Shambab.

イースト・アルゴンフィン・ロード、１３０３１名称　モトローラ・インコーホ レーテッド代表者　ラウナー、ビンセント　ジ四セフ国籍　アメリカ合衆国 ４、代理人 住所　東京都豊島区南長崎２丁目５番２号４、前記第２電流は、トランジスタの ベース−エミッタ電圧に対応、前記第１電流は、１対のトランジスタのベース− エミッタ電圧差対応する請求の範囲第３項による回路。East Algonfin Road, 13031 Name Motorola Inc. Rated Representative: Rauner, Vincent, Jiyoseph Nationality: United States 4. Agent Address: 2-5-2-4 Minami-Nagasaki, Toshima-ku, Tokyo The second current is a transistor The first current corresponds to a base-emitter voltage of a pair of transistors. A circuit according to claim 3 corresponding to an emitter voltage difference.

５、（補正）　第１供給電圧端子と、第２供給電圧端子と、前記第１給電圧端子 と前記第１電圧源との間に結合され、正の温度係数を有る第１電流を発生させる 第１抵抗手段と、前記第１供給電圧端子と記第２電圧源との間に結合され、負の 温度係数を有する第２電流をルさせる第２抵抗手段と、前記第２供給電圧端子と 前記第１．第２踪との間に結合され、前記第１および第２電流を結合して正味温 度数を有する第３電流を発生させ、そこから所望する振幅と温度係数有する電圧 を発生させる第３抵抗手段と、を具える所望する温度係と振幅を有する電圧を発 生させるため、正の温度係数を有する第１圧の第１電源および負の温度係数を有 する第２電圧の第２電源に結するレベルシフティング回路。5. (Correction) The first supply voltage terminal, the second supply voltage terminal, and the first supply voltage terminal and the first voltage source to generate a first current having a positive temperature coefficient. a first resistive means coupled between the first supply voltage terminal and the second voltage source; a second resistance means for causing a second current having a temperature coefficient to flow; and the second supply voltage terminal. Said 1st. a second electric current, which combines the first and second currents to generate a net temperature. generate a third current having a degree and a voltage therefrom having a desired amplitude and temperature coefficient; third resistance means for generating a voltage having a desired temperature coefficient and amplitude; a first voltage source having a positive temperature coefficient and a first voltage having a negative temperature coefficient; a level shifting circuit connected to a second power source of a second voltage;

６、正の温度係数を有する第１電圧を発生させ、・・・・・・・・別個に制御で きる温度係数を有する制御可能電圧レベルシフＩ”ｃ供するための方法。6. Generate a first voltage with a positive temperature coefficient, and ...... can be controlled separately. A method for providing a controllable voltage level shift I''c with a temperature coefficient that can be controlled.

Claims (1)

【特許請求の範囲】[Claims] １．第１供給電圧端子と、第２供給電圧端子と、前記第１供給電圧端子に１会さ れ、正の温度係数を有する第１電流を発生させる第１電流源と、前記第２供給電 圧端子に朝会され、負の温度係数を有する第２電流を発生させる第２電流源と、 前記第１および第２電流源と前記第２供給電圧端子との間に鯖令焙れ、前記第１ および第２電流を結合して前記所望する温度係数に対応する正味温度係数を有す る第３電流を発生させ、前記正味温度係数と前記所望する振幅を有する電圧を前 記第３電流から発生させる第１抵抗手段とを含む。 所望する振幅と温度係数を有する出力電圧を発生させるレベルシフティング回路 。 ２、前記第１電流源は、正の温度係数を有する第１電圧を発生させる第１手段と 、前記第１手段と前記第１供給電圧端子との間に結合された第２抵抗手段とを具 える請求の範囲第１項による回路。 ３、前記第２電流源は、負の温度係数を有する電圧を発生させる第２手段と、前 記第２手段と前記第１供給電圧端子との間に結合された第２抵抗手段とを具える 請求の範囲第２項による回路。 ４、前記第２電流は、トランジスタのベース−エミッタ電圧に対応し、前記第１ 電流は、一対のトランジスタのベース−エミッタ電圧差に対応する請求の範囲第 ３項による回路。 ５、第１供給電圧端子と、第２供給電圧端子と、前記第１供給電圧端子と前記第 １電圧源との間に斧モ令されるのに適合し、正の温度係数を有する第１電流を発 生させる第１抵抗手段と、前記第１供給電圧端子と前記第２電圧源との間にｖｒ ％今されるのに適合し、負の温度係数を有する第２電流を発生させる第２抵抗手 段と、前記第２供給電圧端子と前記第１．第２電源との間にた台Ｇされるのに適 合し１前記第１および第２電流を結合して正味温度係数を有する第３電流を発生 させ、そこから所望する振幅と温度係数を有する電圧を発生させる第３抵抗手段 と、を具える所望する温度係数と振幅を有する電圧を発生させるため、正の温度 係数を有する第１電圧の第１電源および負の温度係数を存する第２電圧の第２電 源に結合するレベルシフティング回路。 ６、正の温度係数を有する第１電圧を発生させ、負の温度係数を有する第２電圧 を発生させ、その値が所望の正味温度係数を有する電流を結果として発生させる ように選ばれている前記第１および第２電圧を第１および第２抵抗手段両端に印 加し、その抵抗が前記電圧レベルシフトを決定する第３抵抗手段に上記総電流を 印加することを含む、別個に制御できる温度係数を有する制御可能電圧レベルシ フトを提供するための方法。 ７、前記第１および第２抵抗手段を変化させて前記正味温度係数を変化させ、前 記第３抵抗手段を変化させて前記レベルシフトを変えることを更に含む請求の範 囲第６項による方法。 ８、前記正味温度係数が約−２８００ｐｐｍから約÷３０００ｐｐｍに変化する 請求の範囲第７項による方法。 ９ｏ　正の温度係数を有する第１電流を発生させ、負の温度係数を有する第２電 流を発生させ、正味負、零又は正の温度係数を達成するため前記第１および第２ 電流の振幅値を変化させ、その抵抗が必要とされるレベルシフトを生じさせるよ うに選ばれている第１抵抗手段に前記第１および第２電流の和を印加することを 含む、レベルシフトの振幅およびその温度係数が別個に制御できる電圧をレベル シフトするための方法。1. a first supply voltage terminal, a second supply voltage terminal, and a second supply voltage terminal connected to the first supply voltage terminal; a first current source that generates a first current having a positive temperature coefficient; a second current source connected to the piezoelectric terminal and generating a second current having a negative temperature coefficient; a connection between the first and second current sources and the second supply voltage terminal; and a second current having a net temperature coefficient corresponding to the desired temperature coefficient. generating a third current having the net temperature coefficient and the desired amplitude; and a first resistance means for generating from the third current. Level shifting circuit to generate output voltage with desired amplitude and temperature coefficient . 2. The first current source is a first means for generating a first voltage having a positive temperature coefficient. , a second resistive means coupled between the first means and the first supply voltage terminal. 1. A circuit according to claim 1. 3. The second current source includes a second means for generating a voltage having a negative temperature coefficient; a second resistive means coupled between the second means and the first supply voltage terminal. A circuit according to claim 2. 4. The second current corresponds to the base-emitter voltage of the transistor, and the second current corresponds to the base-emitter voltage of the transistor. The current corresponds to the base-emitter voltage difference of the pair of transistors. Circuit according to term 3. 5. a first supply voltage terminal, a second supply voltage terminal, and a connection between the first supply voltage terminal and the first supply voltage terminal; emitting a first current having a positive temperature coefficient and having a positive temperature coefficient; vr between the first resistor means for generating voltage and the first supply voltage terminal and the second voltage source. a second resistor hand that generates a second current that is adapted to be applied and has a negative temperature coefficient; a second supply voltage terminal and a second supply voltage terminal; Suitable for being connected to a second power supply combining 1 the first and second currents to generate a third current having a net temperature coefficient; third resistor means for generating a voltage having a desired amplitude and temperature coefficient therefrom; and a positive temperature to generate a voltage with the desired temperature coefficient and amplitude. a first voltage source having a temperature coefficient and a second voltage source having a negative temperature coefficient; level shifting circuit coupled to the source. 6. Generate a first voltage with a positive temperature coefficient, and generate a second voltage with a negative temperature coefficient. resulting in a current whose value has the desired net temperature coefficient said first and second voltages selected to be applied across said first and second resistive means; and transmitting said total current to a third resistor means whose resistance determines said voltage level shift. controllable voltage level series with separately controllable temperature coefficients, including applying A way to provide the benefits. 7. Varying the first and second resistance means to vary the net temperature coefficient; Claims further comprising changing the level shift by changing the third resistance means. Method according to section 6. 8. The net temperature coefficient changes from about -2800ppm to about ÷3000ppm. A method according to claim 7. 9o Generate a first current with a positive temperature coefficient, and generate a second current with a negative temperature coefficient. said first and second to generate a flow and achieve a net negative, zero or positive temperature coefficient. Change the amplitude of the current so that its resistance produces the required level shift. applying the sum of the first and second currents to the first resistor means selected to Including the level voltage, the amplitude of the level shift and its temperature coefficient can be controlled separately. A way to shift.
JP57500778A 1981-02-20 1982-01-25 Level shift circuit Expired - Lifetime JPH0664504B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US23609181A 1981-02-20 1981-02-20
US000000236091 1981-02-20
PCT/US1982/000100 WO1982002964A1 (en) 1981-02-20 1982-01-25 Variable temperature coefficient level shifter
US236091 1988-08-24

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JPS58500092A true JPS58500092A (en) 1983-01-13
JPH0664504B2 JPH0664504B2 (en) 1994-08-22

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JP (1) JPH0664504B2 (en)
IT (1) IT1147597B (en)
WO (1) WO1982002964A1 (en)

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Publication number Priority date Publication date Assignee Title
JP2003512797A (en) * 1999-10-20 2003-04-02 テレフオンアクチーボラゲツト エル エム エリクソン Electronic circuit

Also Published As

Publication number Publication date
WO1982002964A1 (en) 1982-09-02
JPH0664504B2 (en) 1994-08-22
EP0072842A1 (en) 1983-03-02
IT1147597B (en) 1986-11-19
IT8247745A0 (en) 1982-02-08
EP0072842A4 (en) 1984-04-06

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