JPS5952321A - Current source circuit - Google Patents
Current source circuitInfo
- Publication number
- JPS5952321A JPS5952321A JP16252182A JP16252182A JPS5952321A JP S5952321 A JPS5952321 A JP S5952321A JP 16252182 A JP16252182 A JP 16252182A JP 16252182 A JP16252182 A JP 16252182A JP S5952321 A JPS5952321 A JP S5952321A
- Authority
- JP
- Japan
- Prior art keywords
- current
- current source
- source
- temperature coefficient
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体集積回路に用いる電流源回路に関し、特
に電流源の出力電流値に任意の湿度係数を与えることを
可能とした電流源回路に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a current source circuit used in a semiconductor integrated circuit, and more particularly to a current source circuit that can give an arbitrary humidity coefficient to the output current value of the current source.
従来例の構成とその問題点
半導体集積回路に用いる電流源回路の代表的従来例を第
１図に示す。1. Structure of a conventional example and its problems FIG. 1 shows a typical conventional example of a current source circuit used in a semiconductor integrated circuit.
第１図において、１はトランジスタ、２はダイオード列
、３，４は抵抗、５はコレクタ端子、６゜７は電源の両
端子である。トランジスタ１のコレクタ端子已に流入す
る電流値Ｉｃ＋は、トランジスタのｈｙｘが十分大きい
ものとして、ダイオード列２によって定まるトランジス
タ１のエミッタ電圧値Ｖｘ１．（＝ Ｗａｘ （ｎ−１
））とエミッタニ接続すレ７’ｃ抵抗３の抵抗値Ｒ５よ
り定まり。In FIG. 1, 1 is a transistor, 2 is a diode array, 3 and 4 are resistors, 5 is a collector terminal, and 6°7 are both terminals of a power supply. The current value Ic+ flowing into the collector terminal of the transistor 1 is determined by the emitter voltage value Vx1. (= Wax (n-1
)) and the resistance value R5 of the emitter connection thread 7'c resistor 3.
Ｉｃ１＝ Ｖｘ１／Ｒ１Ｉ＝ ＶＢｘ（ｎ−１）／Ｒ３
・−−−−−−−−■となる。ここで、 Ｗａｘはトラ
ンジスタ１のベーク・エミッタ間電位であり、まだ、ダ
イオード列２中のｎ個のダイオードの順方向電圧でもあ
る。Ic1= Vx1/R1I= VBx(n-1)/R3
・－－－－－－－■ becomes. Here, Wax is the bake-emitter potential of transistor 1, and is also the forward voltage of n diodes in diode string 2.
かかる回路において、ダイオード列２のダイオード電圧
は負の湿度係数を有し、温度の上昇とともにダイオード
電圧は減少する。一方、抵抗３の抵３ 、、、、。In such a circuit, the diode voltage of the diode string 2 has a negative humidity coefficient, and as the temperature increases, the diode voltage decreases. On the other hand, resistor 3 of resistor 3...
抗値は正の湿度係数を有し、湿度の上昇とともに抵抗値
は増加する。したがって、■式よりわかるように電流源
の電流値工Ｃ１はほぼ一定の負の温度特性をもって温度
」二昇とともに減少することになる。The resistance value has a positive humidity coefficient, and the resistance value increases with increasing humidity. Therefore, as can be seen from equation (2), the current value C1 of the current source has a nearly constant negative temperature characteristic and decreases as the temperature rises.
一般に、半導体素子は湿度変化により特性が大きく変化
するので、半導体素子を用いた回路では温度補償を行う
必要がある。In general, the characteristics of semiconductor elements change significantly due to changes in humidity, so it is necessary to perform temperature compensation in circuits using semiconductor elements.
使用する目的、用途によっては、それぞれの回路に応じ
た温度係数を要求されるが、第１図に示した電流源では
定まった湿度係数しか得られないため、所望する温度係
数が得られない不都合が存在する。Depending on the purpose and application, a temperature coefficient suitable for each circuit is required, but since the current source shown in Figure 1 can only obtain a fixed humidity coefficient, it is inconvenient that the desired temperature coefficient cannot be obtained. exists.
この問題に対し、電流源の電流値の湿度係数を制御する
手段として第１図のダイオード列２間の電圧を第２図に
示したバンドギャップ型電圧源回路の端子１７と端子１
６間の出力電圧により得、この出力電圧の温度係数が、
バンドギャップ型電圧源回路のバイアス条件によって変
化することを利用し、電流源の出力電流の温度係数を変
えられるようにしたものがある。To solve this problem, as a means to control the humidity coefficient of the current value of the current source, the voltage between the diode array 2 in FIG.
6, and the temperature coefficient of this output voltage is
There is a device that makes use of the fact that the bandgap voltage source circuit changes depending on the bias conditions to change the temperature coefficient of the output current of the current source.
しかしながら、かかるバンドギャップ型電圧源を用いた
電流源においては、電流源の電流値の温度係数を所望の
値に選ぶには、バンドギャップ型電圧源回路のバイアス
値を特定の値にせねば力らず回路設計」二の制約が多く
、さらにバンドギャップ型電圧源の出力値の温度係数は
湿度により変化するため所望の温度係数を得られる温度
範囲が限られてしまう問題があった。尚、第２図におい
て、８．９．１２は抵抗、１０，１１．１３はトランジ
スタ、１４は定電流源、１５〜１７はそれぞれ正側電源
端子、負側電源端子、出力端子である。However, in a current source using such a bandgap voltage source, in order to select a desired value for the temperature coefficient of the current value of the current source, it is necessary to set the bias value of the bandgap voltage source circuit to a specific value. There are many restrictions on circuit design, and the temperature coefficient of the output value of the bandgap voltage source changes depending on humidity, which limits the temperature range in which a desired temperature coefficient can be obtained. In FIG. 2, 8, 9, and 12 are resistors, 10, 11, and 13 are transistors, 14 is a constant current source, and 15 to 17 are a positive power terminal, a negative power terminal, and an output terminal, respectively.
発明の目的
発明の構成
本発明は、電流値が正の温度係数を有する第１の電流源
と同負の湿度係数を有する第２の電流源との両電流を加
算受給する第１のトランジスタおよび前記第１のトラン
ジスタに電流ミラー結合さ５７・ ・
れた第２の１−ランジヌタをそなえた電流源回路であり
、本発明によれば第１の電流源と第２の電流源とで互い
の電流値を任意に違えて制御することにより、両型流値
を加算して得られる電流に任意の温度特性をもつ電流源
回路が実現できる。Object of the Invention Constitution of the Invention The present invention provides a first transistor whose current value receives and adds currents from a first current source having a positive temperature coefficient and a second current source having the same negative humidity coefficient; A current source circuit is provided with a second 1-range nut coupled to the first transistor by a current mirror, and according to the present invention, the first current source and the second current source are connected to each other. By controlling the current value to be arbitrarily different, it is possible to realize a current source circuit in which the current obtained by adding the current values of both types has an arbitrary temperature characteristic.
実施例の説明
第３図は本発明の一実施例を示したブロック図であり、
第３図において、１８は電流源、１９は前記電流源１８
より発生し枝路２６を通る電流によって駆動される電圧
源、２ｏは前記電圧源１９より発生し枝路２２を通して
印加され、電圧によって駆動され出力枝路２４の出力電
流が正の温度係数を有する第１の電流源、２１は前記電
圧源１９より発生し枝路２３を通し印加される電圧によ
り駆動され、出力枝路２５の出力電流が負の温度係数を
有する第２の電流源である。DESCRIPTION OF EMBODIMENTS FIG. 3 is a block diagram showing an embodiment of the present invention.
In FIG. 3, 18 is a current source, and 19 is the current source 18.
A voltage source 2o is generated by said voltage source 19 and is applied through branch 22 and is driven by a voltage whose output current in output branch 24 has a positive temperature coefficient. The first current source, 21, is a second current source driven by a voltage generated by the voltage source 19 and applied through the branch 23, the output current of the output branch 25 having a negative temperature coefficient.
前記第１の電流源２ｏの出力電流と第２の電流源２１の
出力電流は加え合わされ電流源１８に加えられ、電流源
１８内で枝路２６への出力電流へと電流ミラーされる。The output currents of the first current source 2o and the second current source 21 are summed and applied to the current source 18, where they are current-mirrored to an output current to the branch 26.
枝路２７は他の回路部へ供給６１・ 、・
される枝路２６と同様な電流ミラー回路の出力端子であ
る。かかる回路において、正の温度係数を有する第１の
電流源２ｏに相当する枝路２４の電流を、負の温度係数
を有する第２の電流源２１に相当する枝路２５の電流よ
り多くすれば枝路２６及び枝路２７への出力電流の温度
係数は正となり、逆に枝路２４の電流を枝路２５の電流
より少くすれば枝路２６及び枝路２７への出力電流の温
度係数は負となる。Branch 27 is the output terminal of a current mirror circuit similar to branch 26 which is supplied to other circuit sections 61. In such a circuit, if the current in the branch 24 corresponding to the first current source 2o having a positive temperature coefficient is made larger than the current in the branch 25 corresponding to the second current source 21 having a negative temperature coefficient, The temperature coefficient of the output current to the branches 26 and 27 is positive; conversely, if the current in the branch 24 is made smaller than the current in the branch 25, the temperature coefficient of the output current to the branches 26 and 27 becomes becomes negative.
さらに、枝路２４の電流と枝路２５の電流を適切な比率
に定めることにより湿度係数を零とすることも可能であ
る。Furthermore, it is also possible to make the humidity coefficient zero by setting the current in the branch 24 and the current in the branch 25 at an appropriate ratio.
以上述べたように、本方法を用いれば、枝路２４の電流
と枝路２５の電流の加算比率を適当に定めることにより
任意の温度係数を持つ電流源回路を得ることができる。As described above, by using this method, a current source circuit having an arbitrary temperature coefficient can be obtained by appropriately determining the addition ratio of the current in the branch 24 and the current in the branch 25.
第４図は本発明の具体的な一実施例である。同図におい
て、２８．２９．３６は第３図における電流源１８を構
成する各トランジスタであり、トランジスタ２９のエミ
ッタ’ｔＬ流ハ）ランジスタ２８゜７ ／−・
３６のエミッタ電流へそれぞれ電流ミラーされる。FIG. 4 shows a specific embodiment of the present invention. In the figure, reference numerals 28, 29, and 36 are transistors constituting the current source 18 in FIG. Ru.
３０．３１は第３図における電圧源１９を構成するダイ
オードであり、枝路２６を通って供給される前記トラン
ジスタ２８のコレクタ電流により駆動される。なお、ト
ランジスタ２８のコレクタ電流ハ、トランジスタ２９の
コレクタ電流とミラー比１：１で対応する。トランジス
タ３２及び抵抗３３は第３図の正の湿度係数を有する電
流源２゜を構成し、トランジスタ３４及び抵抗３６は第
３図の負の温度係数を有する電流源２１を構成している
。３７は正の電源端子、３８は負の電源端子である。30 and 31 are diodes constituting the voltage source 19 in FIG. 3, and are driven by the collector current of the transistor 28 supplied through the branch 26. Note that the collector current of the transistor 28 corresponds to the collector current of the transistor 29 at a mirror ratio of 1:1. Transistor 32 and resistor 33 constitute current source 2° with a positive humidity coefficient of FIG. 3, and transistor 34 and resistor 36 constitute current source 21 with negative temperature coefficient of FIG. 37 is a positive power supply terminal, and 38 is a negative power supply terminal.
以下、第４図の回路における枝路２７の電流値の温度係
数についてのべる。簡単のためトランジスタのｈｙｚは
十分大きな値であり、さらにトランジスタ２８のコレク
タよりダイオード３０．３１へ供給される電流値ＩＣ２
Ｂは温度係数が零であると仮定スる。トランジスタ３２
のコレクタ電流値をＩＣ５２，）ランジヌタ３４のコレ
クタ電流値ヲＩｃ５４゜抵抗３３の値をＲ３３，抵抗３
５の値をＲ５５とするとすると次に示す■、■式が成立
する。The temperature coefficient of the current value of the branch 27 in the circuit of FIG. 4 will be described below. For simplicity, hyz of the transistor is a sufficiently large value, and furthermore, the current value IC2 supplied from the collector of the transistor 28 to the diode 30.31 is
It is assumed that B has a temperature coefficient of zero. transistor 32
The collector current value of the resistor 33 is R33, the collector current value of the lung nut 34 is Ic54,
Assuming that the value of 5 is R55, the following equations (1) and (2) hold true.
ただし、ｋはボルツマン定数、ρは単位電荷量。However, k is Boltzmann's constant and ρ is the unit charge.
Ｔは絶対湿度、 Ｉｓは飽和電流値である。抵抗３３゜
３５に半導体集積回路内の抵抗を用いた場合、Ｒ３３、
Ｒ３４は２０００ｐｐｍ／に程度（Ｄ 正（Ｄ 温度係
数を有し、Ｉｓは２０％７に程度の負の温度係数を有し
、かつ、ｌ０２８ は温度係数零と仮定しているから
■式よりＩＣ３２は正の湿度係数、０式よりＩＣ３４は
負の湿度係数を有していることがわかる。従って、工Ｃ
３２とＩＣ５１１の和よりなるトランジスタ２９のコレ
クタ電流の値ＩＣ２９は、工Ｃ３２とＩＣ５４の割合を
変化させることにより正、負任意の温度係数を持たせる
ことができ、その電流ミラーによって得られた枝路２７
の電流値工Ｃ３６もＩＣ２９と同一の任意の温度係数を
有することができる。T is the absolute humidity, and Is is the saturation current value. If a resistor in the semiconductor integrated circuit is used as the resistor 33°35, R33,
R34 has a temperature coefficient of about 2000 ppm/ (D positive (D), Is has a negative temperature coefficient of about 20%7, and l028 is assumed to have a temperature coefficient of zero, so from formula It can be seen that IC32 has a positive humidity coefficient and IC34 has a negative humidity coefficient from equation 0. Therefore, the engineering C
The collector current value IC29 of the transistor 29, which is the sum of C32 and IC511, can have any positive or negative temperature coefficient by changing the ratio of C32 and IC54, and the branch obtained by the current mirror Road 27
The current value circuit C36 can also have the same arbitrary temperature coefficient as IC29.
以上は前記したように簡単のだめトランジスタ９１・
・−
２８の温度係数を零として仮定したが、実際にはＩＣ２
８もＩＣ２９を電流ミラーしたものであり、ＩＣ２Ｂも
湿度係数を有することになる。The above is a simple transistor 91 as described above.
- It was assumed that the temperature coefficient of 28 was zero, but in reality IC2
8 is also a current mirror of IC29, and IC2B also has a humidity coefficient.
したがって、ＩＣ５６の正確な温度係数を求めるには、
ＩＣ２Ｂ の湿度係数も考慮した回路方程式をたてて
数値解析を行うことにより得られることはいうまでもな
い。Therefore, to find the accurate temperature coefficient of IC56,
Needless to say, this can be obtained by formulating a circuit equation that also takes into account the humidity coefficient of IC2B and performing numerical analysis.
発明の効果
以上のように、本発明の電流源回路は半導体集積回路に
任意の温度係数を持った電流源を容易に実現できるもの
であり、半導体集積回路の動作。Effects of the Invention As described above, the current source circuit of the present invention can easily realize a current source with an arbitrary temperature coefficient in a semiconductor integrated circuit, and can improve the operation of the semiconductor integrated circuit.
温度特性を最ものぞましい値に容易に設定することがで
き、半導体集積回路の性能を上げることが可能となる。Temperature characteristics can be easily set to the most desirable value, making it possible to improve the performance of semiconductor integrated circuits.
第１図は従来の電流源回路図、第２図はバンドギャップ
型電圧源回路図、第３図は本発明の一実施例を示すブロ
ック図、第４図は本発明の具体的一実施例の回路構成図
である。
２８．２９．３２．３４．３６・・・・・・トランジス
１ｏｌ・ −・
夕、３３ 、３５−・・・・抵抗、１８，２ｏ１２１・
川・・電流源回路、１９・・・・・・電圧源回路、３０
．３１・・・・・・ダイオード。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
第３図
第４図Fig. 1 is a conventional current source circuit diagram, Fig. 2 is a bandgap voltage source circuit diagram, Fig. 3 is a block diagram showing an embodiment of the present invention, and Fig. 4 is a specific embodiment of the present invention. FIG. 28.29.32.34.36...Transistor 1ol--Yu, 33, 35-...Resistance, 18,2o121-
River...Current source circuit, 19...Voltage source circuit, 30
．． 31...Diode. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 3 Figure 4
Claims (3)
、電流値が負の湿度係数を有する第２の電流源と、前記
第１．第２の電流源の電流を加算受給する第１のトラン
ジスタと、前記第１のトランジスタに電流ミラー結合さ
れた第２のトランジスタをそなえた電流源回路。(1) a first current source whose current value has a positive humidity coefficient; a second current source whose current value has a negative humidity coefficient; A current source circuit comprising: a first transistor that adds and receives current from a second current source; and a second transistor that is current mirror coupled to the first transistor.
圧源が前記訓電流源の加算電流に対応する電流によって
駆動される特許請求の範囲第１項に記載 載の電学源回路。(2) The electromagnetic power source circuit according to claim 1, wherein the drive voltage source for controlling the first and second current sources is driven by a current corresponding to the added current of the training current source. .
合された第３の電流源により駆動される特許請求の範囲
第２項に記載の電流源回路。(3) The current source circuit according to claim 2, wherein the drive voltage source is driven by a third current source that is current mirror coupled to the first transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16252182A JPS5952321A (en) | 1982-09-17 | 1982-09-17 | Current source circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16252182A JPS5952321A (en) | 1982-09-17 | 1982-09-17 | Current source circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5952321A true JPS5952321A (en) | 1984-03-26 |
Family
ID=15756198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16252182A Pending JPS5952321A (en) | 1982-09-17 | 1982-09-17 | Current source circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5952321A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0140677A2 (en) * | 1983-10-27 | 1985-05-08 | Fujitsu Limited | Differential amplifier using a constant-current source circuit |
| FR2653574A1 (en) * | 1989-10-20 | 1991-04-26 | Sgs Thomson Microelectronics | Current source with low temperature coefficient |
| US5103159A (en) * | 1989-10-20 | 1992-04-07 | Sgs-Thomson Microelectronics S.A. | Current source with low temperature coefficient |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135217A (en) * | 1980-02-22 | 1981-10-22 | Bosch Gmbh Robert | Voltage source |
-
1982
- 1982-09-17 JP JP16252182A patent/JPS5952321A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135217A (en) * | 1980-02-22 | 1981-10-22 | Bosch Gmbh Robert | Voltage source |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0140677A2 (en) * | 1983-10-27 | 1985-05-08 | Fujitsu Limited | Differential amplifier using a constant-current source circuit |
| FR2653574A1 (en) * | 1989-10-20 | 1991-04-26 | Sgs Thomson Microelectronics | Current source with low temperature coefficient |
| US5103159A (en) * | 1989-10-20 | 1992-04-07 | Sgs-Thomson Microelectronics S.A. | Current source with low temperature coefficient |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR0136874B1 (en) | Stabilized current and voltage reference sources | |
| JP2001510609A (en) | Reference voltage source with temperature compensated output reference voltage | |
| US4683416A (en) | Voltage regulator | |
| JPH03244207A (en) | Current mirror functioning as compensation of base current in combination | |
| JPS5952321A (en) | Current source circuit | |
| KR950010131B1 (en) | Voltage regulator having a precision thermal current source | |
| JP3178716B2 (en) | Maximum value output circuit, minimum value output circuit, maximum value minimum value output circuit | |
| JPH05216550A (en) | Voltage generator | |
| EP0539136A2 (en) | Voltage generating device | |
| JPH0225561B2 (en) | ||
| JP2825396B2 (en) | Current source circuit | |
| US6356066B1 (en) | Voltage reference source | |
| JPH0518288B2 (en) | ||
| JPH05324108A (en) | Constant current output circuit | |
| JP3310033B2 (en) | Constant voltage circuit | |
| JPH036020Y2 (en) | ||
| JP2772962B2 (en) | Constant voltage circuit and DC two-wire sensor using the same | |
| JPS636888Y2 (en) | ||
| JPS6233365Y2 (en) | ||
| JPS59132014A (en) | Reference voltage generating circuit | |
| JPH067379Y2 (en) | Reference voltage source circuit | |
| JPS5938819A (en) | Reference voltage generating circuit | |
| JPS589289Y2 (en) | constant current circuit | |
| JPS63287105A (en) | Current mirror circuit | |
| JPS63236403A (en) | Current source circuit |