JPS584960A - Electronic device - Google Patents
Electronic deviceInfo
- Publication number
- JPS584960A JPS584960A JP57096167A JP9616782A JPS584960A JP S584960 A JPS584960 A JP S584960A JP 57096167 A JP57096167 A JP 57096167A JP 9616782 A JP9616782 A JP 9616782A JP S584960 A JPS584960 A JP S584960A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- flange
- tab
- tab lead
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Die Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置、集積回路装置等の電子装置、特に
その組立技術に関するものであり、11力用電子装置の
製作に有効(利用し得るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to electronic devices such as semiconductor devices and integrated circuit devices, and in particular to assembly techniques thereof, and is effective (and can be used) for manufacturing electronic devices for 11-power use.
一般に電力用の電子装置は、小信号用の電子装置と14
rxす、大きな放熱用フランジを必要とすることから素
子、7ランジ、リード線相互間の組立が複雑となり、ま
たレジ7等によりモールド封止等の封止に際してもモー
ルド型が複雑となり、それがため小信号用電子装置に比
べその工業化が遅れている。In general, power electronic devices are small signal electronic devices and 14
rx requires a large heat dissipation flange, which complicates the assembly between the element, 7 langes, and lead wires, and also complicates the mold mold for mold sealing due to the resistor 7, etc. Therefore, its industrialization has been delayed compared to small signal electronic devices.
したがって本願は電力用電子装置を工業化するに有効な
新規な技術を提供せんとするものである。Therefore, the present application attempts to provide a new technique that is effective for industrializing power electronic devices.
第1図は電子素子を取り付けるためのフランジの上面図
な示し、また第2図はその縦断面図を示すものであって
、首状体をプレス(より打ちねくことによって作られる
。工業的には1例えば電子装置10個分のフランジが一
連に一体化された杉で製造される。Fig. 1 shows a top view of a flange for attaching an electronic device, and Fig. 2 shows a longitudinal cross-sectional view thereof, which is made by pressing (pounding) a neck-like body. For example, a flange for 10 electronic devices is made of cedar and integrated into a series.
図中1は例えば厚さ1.26w巾8■1個あたりの長さ
30.0大きさの7ランジ本体を示し、該フランジに接
続される素子において生じた熱を有効に外部に放散させ
るものであるから、熱伝導の良好な銅、アルミニウム、
またはそれらを主体とする合金、さらには上記の物質を
主板とするクラツド板が利用される。そして上記フラン
ジの表面には防蝕その他の目的により、ニッケルその他
のメッキ層を形成することは有効なことであり、このこ
とは後に詳細(説明される。In the figure, 1 indicates a 7-flange main body with a thickness of 1.26w and a width of 8cm and a length of 30.0mm per piece, which effectively dissipates heat generated in the elements connected to the flange to the outside. Therefore, copper, aluminum, and
Or alloys mainly composed of these substances, and furthermore, clad plates mainly composed of the above substances are used. It is effective to form a plating layer of nickel or other material on the surface of the flange for corrosion prevention or other purposes, and this will be explained in detail later.
フランジIK対し形成された切り通入部2は後に行なう
モールド封止工程において溶融状態のモールド材料が不
必要な部分に流れ出るのt防止するために形成されたモ
ールド材流れ防止用切り退入である。The cut-through portion 2 formed in the flange IK is a cut-out and recess for preventing the mold material from flowing out to prevent the molten mold material from flowing out to unnecessary portions in the mold sealing process to be performed later.
孔3は電子装置が完成された時、外部放熱体と7ランジ
とを密着させるためのボルト通し孔であり、それによっ
て熱放散を著しく大ならしめることが可能となる。The holes 3 are bolt holes for tightly fitting the external heat sink and the flange 7 when the electronic device is completed, thereby making it possible to significantly increase heat dissipation.
4は後に説明されるリードフレームのタブリードを挿入
するためく形成された開孔スリット状タブリード挿入部
である。Reference numeral 4 designates an open slit-shaped tab lead insertion portion formed for inserting a tab lead of a lead frame, which will be explained later.
該タブリード挿入部4の外まわり9t*成する細巾の突
起5IS5は上記タブリード挿入部4内に位置するタブ
リードをかしめ付けるためく形成されたタブリードおさ
え部であって1図では小なる圧力でかしめつけられるよ
うにタブリード挿入部、中央上部で分離されているが、
同図中タブリード挿入部4の上部左右に形成されたタブ
リードおさえ部5はタブリード挿入部中央上部で連結さ
れた形であってもよく、その場合タブリード挿入WIh
4は閉孔スリット状となる。また上記タブリード挿入部
4はフランジの長さ方向(図中左右の方向)と同一の方
向に長(形成されているが、それは突起部5f:かしめ
ることによってタブリードをおさえ付ける場合に矢印6
の方向から力な加えればよく作業上有効であり、またタ
ブリード挿入部4が図中上下方向に一対形成せしめたの
はかしめ付けによる圧力により、リードフレームとフラ
ンジ1との位置関係、に誤差な生じさせないため、およ
びかしめ付けに際し、リードフレームの弾性を有効に利
用するためであり、これらの目的な考慮しなければタブ
リード挿入部の長さ方向を例えばフランジの長さ方向に
直交するが如き方向に変えてもよ(、またタブリード挿
入部を1つKしてもよい。The narrow protrusion 5IS5 forming the outer circumference 9t* of the tab lead insertion part 4 is a tab lead holding part formed to swage the tab lead located inside the tab lead insertion part 4, and in FIG. 1, it is swaged with a small pressure. The tab lead insertion section is separated at the top center so that
In the figure, the tab lead holding parts 5 formed on the left and right sides of the upper part of the tab lead insertion part 4 may be connected at the upper center of the tab lead insertion part, in which case the tab lead insertion part WIh
4 has a closed slit shape. The tab lead insertion part 4 is long (formed) in the same direction as the length direction of the flange (left and right direction in the figure), but it is a protrusion 5f.
It is effective for the work if force is applied from the direction shown in FIG. This is to prevent this from occurring, and to make effective use of the elasticity of the lead frame during caulking. (Also, one tab lead insertion part may be changed to K.
溝部7は素子な取り付けるべ1位置8を規定するために
形成された4、5Wφ程度の溝である。The groove portion 7 is a groove having a diameter of approximately 4 to 5 Wφ and is formed to define a position 8 for mounting an element.
以上フランジ本体は一回のプレス加工により製作するこ
とができ、少な(とも溝7はタブリード挿入g4を形成
するためのプレス麿と一体的KI11成されることが望
ましい。すなわち素子取付位置8とタブリード挿入[4
とが一定の位置関係に規定され、したがってタブリード
挿入部4によって保持されるリードフレームと素子取付
位置8との位置関係が正確に規定されるからである。As mentioned above, the flange main body can be manufactured by one press process, and it is preferable that the groove 7 is formed integrally with the press piece for forming the tab lead insertion g4.In other words, the element mounting position 8 and the tab lead Insert [4
This is because the positional relationship between the lead frame held by the tab lead insertion portion 4 and the element mounting position 8 is defined accurately.
第3図は上記第1図、第2図に示されたフランジ本体1
0表IfFK例えば5μのニッケル被膜99を例えばメ
ッキにより形成じ、さもに上記素子取付位置8における
ニッケル被膜9上に例えば5o。Figure 3 shows the flange body 1 shown in Figures 1 and 2 above.
Table 0 IfFK A nickel film 99 of, for example, 5 μm is formed by, for example, plating, and a nickel film 99 of, for example, 5 μm is formed on the nickel film 9 at the element mounting position 8.
μの銀箔10t−電気″1IiWlvcよって接続した
状II!を示す縦断rM図である。特に上記素子がトラ
ンジスタ等の半導体素子または半導体集積回路素子のよ
うな場合、#1.アルミニウム等のフランジ表面に直接
素子を取り付けることは望ましくなく、一方200μ〜
1200μ程度の銀な介在させればフレームの素子に対
する影響シiなく、テ熱JL散、も、著しく良好となり
、また銀は軟質金属であることから4.5wX4.’5
gBIi度のかなり大なる素子を取り付けても熱歪によ
る素子の破損は生じないから素子と7ランジとの間の介
在物1oとしては極めて有力なものである。また1μ〜
10μ程度のニッケル被膜9の介在は、フランジの防蝕
被膜として作用し、さらにフランジ1と介在物10との
電気溶接における抵抗材としても作用し、上記介在物1
0とフランジ本体との間を強力に接続する。上記抵抗材
として作用するものとしてはニッケルの他クロム、モリ
プデ/、夕/ゲステンさらにはそれ−らの合金またはそ
れらと他の金属との合金等があり。It is a vertical cross-sectional rM diagram showing the state II! in which the silver foil 10t of μ is connected by 1IiWlvc. In particular, when the above-mentioned element is a semiconductor element such as a transistor or a semiconductor integrated circuit element, #1. It is undesirable to attach the element directly; on the other hand, 200 μ~
If silver of about 1200μ is interposed, there will be no effect on the frame elements, and the heat dissipation will be significantly improved.Also, since silver is a soft metal, it will not affect the elements of the frame. '5
Even if an element with a considerably high degree of gBIi is attached, the element will not be damaged due to thermal strain, so it is extremely effective as the inclusion 1o between the element and the 7 langes. Also 1 μ~
The intervening nickel film 9 of about 10 μm acts as a corrosion-proofing film for the flange, and also acts as a resistance material in the electric welding between the flange 1 and the inclusion 10.
0 and the flange body. In addition to nickel, materials that act as the above-mentioned resistive material include chromium, molybdenum, ester, and alloys thereof or alloys of these with other metals.
同様に利用し得る。なお同図中11.12は電気溶接用
電極、の一部を示す。It can be used similarly. Note that 11.12 in the same figure indicates a part of an electric welding electrode.
上述の如く素子とフランジ1との関に銀箔等の介在物1
0を必要とする場合、まず介在物10とフランジ1との
間を電気溶接(より接続することは有力な方法であり、
他の多くの場合にも利用し得る。すなわち、フランジ1
またはその表面のニッケル等の被膜および介在物10の
接触表fIF)入が溶融するように抵抗溶接すれば介在
物の他の面すなわち素子な取り付けるべき平坦r11な
そのまま維持でき、後に行なわれる素子の取り付けを全
面にわたって均一に行なうことができ、また電気溶接は
1iiW&発熱によるものであり、上記1ilI綾部以
外の部分の変質をおさえることができるからである。As mentioned above, there is an inclusion 1 such as silver foil between the element and the flange 1.
If 0 is required, first weld the inclusion 10 and the flange 1 by electric welding.
It can also be used in many other cases. That is, flange 1
Alternatively, if resistance welding is performed so that the nickel coating on the surface and the contact surface fIF) of the inclusion 10 are melted, the other surface of the inclusion, that is, the flat surface r11 to which the element is to be attached, can be maintained as it is, and the surface of the element to be attached later can be welded. This is because the attachment can be performed uniformly over the entire surface, and since electric welding is performed by 1iiW and heat generation, deterioration of the parts other than the above-mentioned 1ilI twill can be suppressed.
また他の有効な方法として鯛フラ/ジ1素子取付位置8
に銀箔10を冷間圧接(より接続する方法があり、かか
る方法によれば銀およびフランジ等は変質せずまたその
表面も全面平坦に加圧されるから平坦度は阻害されずし
たかって上記抵抗溶接の場合と同様の利点を有する。こ
の場合ニッケル被膜9の形成は、冷間圧接後、上記銀箔
なレジン等の耐蝕性物質により保護した状態でメッキに
より行なうのが望ましい。In addition, another effective method is to
There is a method of cold-pressure welding (connecting) the silver foil 10 to the flange. According to this method, the silver and the flange do not change in quality, and the entire surface is pressurized to be flat, so the flatness is not affected and the above-mentioned resistance is maintained. It has the same advantages as welding.In this case, it is desirable to form the nickel film 9 by plating after cold pressure welding, while protecting it with a corrosion-resistant material such as the above-mentioned silver foil or resin.
上記銀箔1命と銅フラ/ジlとの他の有効な!読方法と
しては銀と繭との界面における共晶を利用して比較的低
温で接続する方法があり、さらに他の方法としては鑞材
を介して接続する方法および介在物全体を溶融せしめて
接続する方法等があるが、これらの場合INに行なわれ
る素子取付濃度以上で加熱接続する必要があり、フラ/
ジ1.介在物10の変質防止に充分な考慮をはらうべき
である。Other valid with the above silver foil 1 life and copper foil/jil! One way to read this is to use the eutectic at the interface between the silver and the cocoon to connect at a relatively low temperature.Other methods include connecting through a solder and melting the entire inclusion. There are methods to do this, but in these cases it is necessary to heat the connection at a temperature higher than the element mounting concentration used for IN, and the
Ji1. Sufficient consideration should be given to preventing deterioration of the inclusions 10.
第4図、は上記銀箔lo上に素子13を鑞接によって取
り付けた縦断面図を示すものであって、素子13として
Siを基体とする2、5mX2.OgF)大きさの電力
増巾用半導体集積回路、素子が用いられ、その−主表面
が金シリコン共晶鑞材14によって約440Cで上記平
坦な銀箔10の平坦な面に均一にろう接されている。ま
た上記、鑞接による接続にかわる方法として本発明は、
銀金等の導電性粉末を含む導電性接着材が利用しており
、その場合加熱なIf;!5要としないから作業は容易
である。FIG. 4 shows a vertical cross-sectional view of the element 13 mounted on the silver foil lo by soldering, and shows a 2.5 m×2. A semiconductor integrated circuit or device for power amplification having a size of 0gF) is used, and its main surface is uniformly soldered to the flat surface of the flat silver foil 10 at about 440 C with a gold-silicon eutectic solder 14. There is. Furthermore, as an alternative to the above-mentioned connection by soldering, the present invention provides the following methods:
Conductive adhesives containing conductive powders such as silver and gold are used, and in that case, heating is not necessary. The work is easy because it does not require 5.
それゆえ、工業化に極めて有益である。上記素子の他の
一主表面には図示されていないが、 8 r O@ @
8i1N、等の有孔絶縁膜と、半導体内部に形成された
トランジスタ、ダイオード、抵抗岬の電子素子から上記
孔を通して上記絶縁被膜1忙延在する配線路と、後にワ
イヤーな接続するため素子の周辺部に位置する電極端子
とが形成されている。Therefore, it is extremely beneficial for industrialization. Although not shown on the other main surface of the above element, 8 r O@@
8i1N, etc., and wiring paths extending through the insulating film 1 from the electronic elements such as transistors, diodes, and resistor caps formed inside the semiconductor through the holes, and the periphery of the elements for later wire connections. An electrode terminal located at the portion is formed.
上記銀箔、素子のフランジへの接続はかなら−ずしも上
記工程において行なう必要はな(1例えば。The connection of the silver foil and the element to the flange does not necessarily need to be performed in the above process (for example, 1).
上記フランジに対しリードフレームe*続した後におい
て行なってもよい。This may be done after the lead frame e* is connected to the flange.
第5図はリードフレーム20を示す上面図であり1例え
ば、リン青銅の如く遥度の弾性をもった厚さ0.25m
電子装置iff!!あたりの長さ3o■の帯状の金属板
よりなり、それに写真処理をはとこしそれによって形成
された耐蝕性マスクを用いてエツチング処理をはどこす
所謂ホトエツチング技術およびプレス成形加工技術を用
いて作ることができる。他の方法としてはプレス打ちぬ
きおよびプレス成形技術を用いて作ることができる。い
ずれの場合においても前記7ランジの場合と同様例えば
電子装置を10III連続した形で作る場合は。FIG. 5 is a top view showing the lead frame 20. For example, the lead frame 20 has a thickness of 0.25 m and is made of highly elastic material such as phosphor bronze.
Electronic device if! ! It is made using a so-called photo-etching technique and a press molding technique, which consists of a strip-shaped metal plate with a length of 3 mm, which is photo-processed, and then etched using a corrosion-resistant mask formed by the process. be able to. Alternatively, it can be made using press stamping and press molding techniques. In any case, as in the case of the seven ranges, for example, if an electronic device is manufactured in a continuous form of 10 III.
かかるリードフレームも10f1分が一連に接続された
状lのものを製作する必要があるが、ホトエツチング技
術を利用する場合は上記一連のフレームを同時に1回の
処理で作り、プレス成形加工も同時に1回で処理するこ
とができるが、プレス打ちぬきおよびプレス成形技術に
おいては、プレス型がllll11となるから多連のプ
レス型を利用して1回のプレスで同時に処理せず1組の
プレス型で連続的に打ちぬいて行き一連のフレームを作
るのが望ましい。It is necessary to manufacture such a lead frame in which 10 f1 pieces are connected in a series, but if photo-etching technology is used, the series of frames described above can be made simultaneously in one process, and press forming can also be done in one process at the same time. However, in press punching and press molding technology, the number of press dies is llll11, so multiple press dies are used and processing is not done simultaneously in one press, but in one set of press dies. It is preferable to punch out continuously to create a series of frames.
図中21aは後で説明される封止体内(図中2点鎖1[
15で包囲された部分)に位置するリード部分(内部リ
ードg)を示し、その先端は上記素子数り付は位置8の
外周にほぼ一致するように形成するとよい。21bは封
止体外部に導出させるリード部分(外部リード部)を示
し、同図においてはリードとしての形状を示しているが
、かならずしもかかる形状をもつ必要はなく一平板状と
しておき、封止後の打ちぬきによりリードとしての形状
となしてもよい。以上リードs21 a 、 2 lb
は完成品において一体となったリード@21を構成する
。21a in the figure is a sealed body (two-point chain 1 [
The lead portion (inner lead g) located in the portion surrounded by 15 is shown, and its tip is preferably formed so as to substantially coincide with the outer periphery of the element numbering position 8. Reference numeral 21b indicates a lead portion (external lead portion) led out to the outside of the sealing body, and although it is shown in the shape of a lead in the same figure, it is not necessarily necessary to have such a shape, and it may be made into a flat plate shape. It may also be formed into a lead shape by punching. Lead S21A, 2 lb
constitutes an integrated lead @21 in the finished product.
上記多数の外部リード部21bの間はリードフレーム2
0の1部を構成するリード保持部22a22b(総称し
て22とする)によって連結されており、リード保持8
1S22の位置は少なくとも外部リード部21bであれ
ばどこでもよく全部であってもよいが、内部リード21
aの機械的保持の目的から少なくともその一部讐封止部
の境界@15になるべく近く形成することが望まれる。Between the many external lead parts 21b, there is a lead frame 2.
The lead holding parts 22a22b (collectively referred to as 22) forming part of the lead holding parts 8
The position of 1S22 may be anywhere as long as it is at least the outer lead portion 21b, and may be located entirely on the inner lead 21b.
For the purpose of mechanically holding a, it is desirable to form at least a portion thereof as close as possible to the boundary of the sealing portion 15.
特(レジ7等のトラ7スフアーモールド(射出成形)に
よる封止を採用する場合(おいては封止材の流れどめの
目的をかねさせることがら重要な意味をもつ。また外部
リード部21bがリード線としての杉なもつ本例におい
て2つのリード保持1122 a。This is especially important when sealing by sphere molding (injection molding) such as the cash register 7 is used as it serves the purpose of stopping the flow of the sealing material. In this example, 21b is a cedar wire as a lead wire, and two lead holders 1122a.
22bの巾が互に興なっているのはリードフレーム20
0表裏を一目して明確化し、かつ巾の広い方22bはモ
ールド材注入用パイプ(ランナー)の一部な震成せしめ
るためである。また本例においてはリード部21bの先
端を先細に形成し、プリント基板等への挿入を容易にし
たためリード部21bK対し外界から不必要な機械的作
用を受けfすく、それを防止するためリードフレーム2
0によって外部リード1ls21b、を包囲する如く形
成したのであり、これによって装置として完成するまで
の各工程および各工程間の運搬においてリード部21b
の不必要な変形が防止される。It is the lead frame 20 that the widths of 22b are different from each other.
This is to make the front and back sides clear at a glance, and to make the wider side 22b vibrate as a part of the molding material injection pipe (runner). In addition, in this example, the tip of the lead portion 21b is tapered to facilitate insertion into a printed circuit board, etc., so the lead portion 21bK is susceptible to unnecessary mechanical action from the outside world. 2
0 so as to surround the external lead 1ls21b, and as a result, the lead portion 21b is
Unnecessary deformation of the structure is prevented.
リードフレーム20にf#赦された孔83は後に行なわ
れる組立、リード保持部切断およびそ一ルド時の位置合
せ用ガイドとして利用されるガイド孔である。The f# hole 83 in the lead frame 20 is a guide hole used as a positioning guide during later assembly, cutting of the lead holding portion, and holding.
孔24はタブリード25を形成するために形成されたタ
ブリード孔であり、このタブリード25はフランジIK
接続するためのタブリード25aとフラン゛″ジ1の主
面とリードフレーへの主面との間隔な一定に保つための
タブリード25bとを有し、特にタブリード25aと内
部リード5lS21aとの位置関係を一定に保つことが
フランジ1の素子取付位置とを合せる上で重要であり、
そのため上記タブリード25の輪郭を形ずくも切り退入
孔241に第6図に示すように上記内部リード1llS
218を形成するホトエツチング処理で同時に形成して
その位置関係を一定に規定しておき、つぎにプレス成形
によりタブリードとすべき部分25をおり曲げればよい
。さらに他の方法としてプレス打ちねきおよびプレス成
形技術により同時または順次に内部リードW&21mお
よびタブリード25t−形成すればよい。このようなリ
ードフレームはリード線のソルダピリティーを高め、ま
た後記する素子リードフレーム間のワイヤーボンディン
グの接続を良好ならしめ、かつ防蝕の目的で例えば1μ
以上の厚さの銀メッキが施される。かかる銀メッキ処理
はホトエツチング処理を利用する場合はエツチング後た
だちに行なうかまたはプレス成形後行なえばよく、また
全てプレスで°行なう場合にはプレス前後いずれでもよ
い。また上記目的を達成するための材料としては金があ
るが、高価であり、工業的には銀が好ましい。The hole 24 is a tab lead hole formed to form a tab lead 25, and this tab lead 25 is a tab lead hole formed in the flange IK.
It has a tab lead 25a for connection and a tab lead 25b for keeping the distance between the main surface of the flange 1 and the main surface of the lead fly constant, and in particular the positional relationship between the tab lead 25a and the internal lead 5lS21a. It is important to keep it constant in order to match the element mounting position of flange 1.
Therefore, the outline of the tab lead 25 is cut into a shape so that the inner lead 1llS is inserted into the retraction hole 241 as shown in FIG.
218 is formed at the same time as the photo-etching process, and their positional relationship is defined constant, and then the portion 25 to be made into a tab lead is bent by press molding. As another method, the inner leads W & 21m and the tab lead 25t may be formed simultaneously or sequentially by press punching and press molding techniques. Such a lead frame increases the solderability of the lead wires, improves the wire bonding connection between the element lead frames described later, and has a thickness of 1 μm, for example, for the purpose of corrosion prevention.
Silver plating is applied to a thickness greater than that. Such silver plating treatment may be carried out immediately after etching when photo-etching is used or after press forming, and may be carried out either before or after pressing when all is carried out by press. Further, although gold is a material for achieving the above object, it is expensive, and silver is preferable from an industrial standpoint.
上記のいずれの方法によっ゛てもリードフレーム20の
長さ方向(図中左右の方向)と同じ方向にそってタブリ
ード25aを曲げるようにした場合合致する)とのリー
ドフレーム20平面上での長さ方向の距離Wが上記タブ
25aの曲げ成形前後において全く変動しないというこ
とは重要なことであり、それによって極めて精度の高い
位置関係を保つことができる。そしてかかるタブリード
251は原理的には一連のリードフレームに対しill
所あれt−Sその基本的目的を達成することができる。In any of the above methods, if the tab lead 25a is bent in the same direction as the length direction of the lead frame 20 (the left and right direction in the figure), it will match the lead frame 20 plane. It is important that the distance W in the length direction does not change at all before and after bending the tab 25a, and as a result, an extremely accurate positional relationship can be maintained. In principle, this tab lead 251 is connected to a series of lead frames.
In some cases t-S can achieve its basic purpose.
第7図およびall!8図は上記リードフレーム20の
上記タブリード形成Wh9を拡大して示す斜視図および
そのB−8縦断面図であってリードフレーム20の主面
28と直交する一基1129.に対し互に対称な一対の
タブリード25a&有し、リードフレーム20の長さ方
向と直交する方向の位置ずれが生じないようにしである
。そしてこの場合上記タブリード25aが一連のリード
フレームに対し一対であれば原理的にはその基本目的な
達することができる。さらにタブリード25とそれと連
なるリードフレーム20の主面部分28との成す角度3
0は90°より若干大きく180°より充分小さく形成
されており、これとリードフレーム200弾性によって
7ランジ1との接続を強固なものとすることができる。Figure 7 and all! 8 is an enlarged perspective view showing the tab lead formation Wh9 of the lead frame 20 and a vertical sectional view taken along line B-8 thereof, showing one group 1129. A pair of tab leads 25a and 25a are symmetrical to each other to prevent positional deviation in a direction perpendicular to the length direction of the lead frame 20. In this case, if the tab leads 25a are provided as a pair for a series of lead frames, the basic purpose can be achieved in principle. Furthermore, the angle 3 formed by the tab lead 25 and the main surface portion 28 of the lead frame 20 that is connected thereto.
0 is formed to be slightly larger than 90° and sufficiently smaller than 180°, and this and the elasticity of the lead frame 200 can make the connection with the 7 flange 1 strong.
またタブリード25aの先端はさらに外方に曲げられて
いるがこれは上記フランジ1との接続さらに強vAす◆
のとするためであり、また上記タブリード25@の先端
なフラ/ジIKおける一対のタブリード挿入孔4のそれ
ぞれはぼ中心に位置するようにすればフランジIK対す
るリードフレーム20の接続は−めテ容易なものとなる
。上述の如く弾性を利用する場合の材質としてはりン青
銅の他コバール、鉄ニツケル合金、ニッケル等が利用し
得る。またタブリード25bはかならずしもタブリード
25aと同一の部分に形成する必要はないがプレス成形
回を簡単化する上において同一部分の方が有効であり。Also, the tip of the tab lead 25a is bent further outward, which makes the connection with the flange 1 even stronger.
In addition, if each of the pair of tab lead insertion holes 4 in the flange IK at the tip of the tab lead 25@ is located approximately in the center, the connection of the lead frame 20 to the flange IK will be easy. It becomes easy. In addition to phosphor bronze, Kovar, iron-nickel alloy, nickel, etc. can be used as the material when elasticity is utilized as described above. Although the tab lead 25b does not necessarily need to be formed in the same part as the tab lead 25a, it is more effective to form the tab lead 25b in the same part in order to simplify the press molding process.
またタブリード25a17ランジIKかしめ付けるとき
の応力が内部リード1s21a等へ達しないよう補強す
る意味においてタブリード25aの両側にそれと一体に
形成することは有効である。さらにリードフレーム20
とフランジとの間隔を一定に制御する他の方法としては
、上記フランジの下に平坦にしてフランジと密着する治
具なおき。In addition, it is effective to form the tab lead 25a on both sides of the tab lead 25a integrally with the inner lead 1s21a etc. in order to reinforce the internal lead 1s21a etc. so that the stress generated when the tab lead 25a17 lange IK is caulked does not reach the internal lead 1s21a. Furthermore, lead frame 20
Another way to control the distance between the flange and the flange is to install a jig that is flat under the flange and tightly contacts the flange.
その面に対し、タブリード25aの先端が接するように
成す方法がある。There is a method in which the tip of the tab lead 25a is brought into contact with that surface.
上述のようにして得られたリードフレーム20のタブリ
ード25al素子13Tk取り付けたフランジ1のタブ
リード挿入部4に挿入する。このときタブリード25b
は上記フランジの上面に接し。The tab lead 25al element 13Tk of the lead frame 20 obtained as described above is inserted into the tab lead insertion portion 4 of the attached flange 1. At this time, the tab lead 25b
is in contact with the top surface of the above flange.
7ランジリ一ドフレーム間の間隔を一定に規定する。一
方リードフレームのタブリード25bの先端と同じ高さ
Kおけるタブリード25a巾31はタブリード挿入部4
の長さ16とはぼ同一とすればよくその差はリードフレ
ーム20の内部リード部21a先端と素子取り付は位置
8との間で許容される値以P3に定められるべきであり
、タブリード25aの先端部の巾はそれより充分小さく
しておいてタブリード挿入部4への挿入なスムーズ和す
るとよい。前述した如(考慮をはらって作られリードフ
レーム20およびフランジを用いた場合上記の内部リー
ド部21aと素子取り付は部8との位置関係は上記タブ
リード25aの挿入の入によって一義的に決定される。7. The interval between RANGE LID frames is defined as constant. On the other hand, the width 31 of the tab lead 25a at the same height K as the tip of the tab lead 25b of the lead frame is the tab lead insertion portion 4.
The length 16 of the tab lead 25a should be approximately the same as the length 16 of the tab lead 25a. It is preferable to make the width of the tip of the tab lead sufficiently smaller than that so that it can be inserted smoothly into the tab lead insertion part 4. As mentioned above (when the lead frame 20 and flange are made with consideration), the positional relationship between the internal lead part 21a and the element mounting part 8 is uniquely determined by the insertion of the tab lead 25a. Ru.
上述の如く位置合せされた後第1図に矢印6で示す方向
より圧力を加えタブリードおさえ部59I:変形させて
タグリードなスリット4内に固定させる。このとき第9
図に断面図にて示す如く矢印6の方向の圧力によってタ
ブリード25mがスリット内の上部および下部に接し、
さらに加圧されしかもリードフレームにはある程度の弾
性をもたせであるから両者の接触は極めて強固なものと
なる。After being aligned as described above, pressure is applied in the direction shown by the arrow 6 in FIG. 1 to deform the tab lead holding portion 59I and fix it in the tag lead slit 4. At this time the 9th
As shown in the cross-sectional view in the figure, the tab lead 25m comes into contact with the upper and lower parts of the slit due to the pressure in the direction of the arrow 6.
Furthermore, since the lead frame is pressurized and has a certain degree of elasticity, the contact between the two is extremely strong.
第10図は上述したタブリード25afスリブト4内に
おいてかしめ付けした状st示す要部上面図であり、こ
こで注意すべき事項はタブリード25aの中央部すなわ
ち本例ではタブリードおさえ都5の先端@’rr入によ
ってかしめ付けが行なわれている点であり、封止後上記
かしめ付が行なわれているスリブ)4F)中央部f)入
で7ランジの切断を行なう如く成しである点であり、こ
れによって、かしめ圧力な低減でき、かつ切断可能な巾
が大きくとれる。FIG. 10 is a top view of the main parts of the above-mentioned tab lead 25af crimped inside the slot 4. What should be noted here is the central part of the tab lead 25a, that is, the tip of the tab lead holding capital 5 in this example @'rr This point is that crimping is performed by inserting, and the above-mentioned crimping is performed after sealing. This allows the caulking pressure to be reduced and the width that can be cut to be increased.
第11図は素子13の一主表面に位置する電極端子と内
部リード1121aとの間をワイヤーボンディングによ
り電気的に接続する一例な示している。図面中32は例
えば50μφ程度の金、アルミニウム等のコネクタワイ
ヤであり、その材質は電一端子および内部リード部21
mの先端表面材質および接続技術によって種々選択され
得る。例えば電極端子がアルミニウム、内部リード端子
21aの先端表面材質が銀で1wI続技術が熱圧着法に
である場合には、金が適しており、超音波溶接による場
合はアルミニウムが適している。上述の如きワイヤーボ
ンディングにおいては内部リード部21aとコネクタワ
イヤ32との接続において多少なりとも圧力を加える必
要があり、そのため内部リニド81s21aが曲がる。FIG. 11 shows an example in which the electrode terminal located on one main surface of the element 13 and the internal lead 1121a are electrically connected by wire bonding. In the drawing, 32 is a connector wire made of gold, aluminum, etc. with a diameter of about 50 μΦ, and the material is the electrical terminal and the internal lead part 21.
Various choices can be made depending on the tip surface material and connection technology. For example, when the electrode terminal is aluminum, the tip surface material of the internal lead terminal 21a is silver, and the 1wI connection technique is thermocompression bonding, gold is suitable, and when ultrasonic welding is used, aluminum is suitable. In wire bonding as described above, it is necessary to apply some pressure to the connection between the internal lead portion 21a and the connector wire 32, which causes the internal lead 81s21a to bend.
一方熱圧着による場合内部リード部21mの先端および
素子電極を350C程度に加熱する必要があり、また超
音波溶接においても峡部を100C程□度に加熱してお
くことが望ましい。このために第11図11111b+
に示す如く鉄、#1等の熱伝導良好な金属スペーサ33
をフランジの長さ方向と直交する方向より介入せしめ、
介在させボンディング后とりさる如く成せばよい。この
とき上記金属スペーサ33を加熱しておけば内部リード
1s21aを直接加熱することもできる。また第12図
においてはセラミツクリフグ略の絶縁物スペーサをフラ
ンジ1とり−ドフレームとの接続以前に銀箔lOによっ
て位置定めして介「させておき完成後もそのまま付けた
ままの状−となしたものである。いずれの場合において
も上記加熱は7ランジの載置台34を加熱体とするのが
簡単であるから上記スペーサ33を熱伝導の良好な金属
またはアルミナセラミックス、ベリリア磁器の如き熱伝
導の良好な絶縁物であることが好まれる。On the other hand, in the case of thermocompression bonding, it is necessary to heat the tip of the internal lead portion 21m and the element electrode to about 350C, and also in ultrasonic welding, it is desirable to heat the isthmus to about 100C. For this purpose, Fig. 11 11111b+
As shown in the figure, a metal spacer 33 made of iron, #1, etc. with good thermal conductivity is used.
intervene in the direction perpendicular to the length direction of the flange,
It may be done by intervening and removing it after bonding. At this time, if the metal spacer 33 is heated, the internal lead 1s21a can be directly heated. In addition, in Fig. 12, an insulating spacer (ceramic plug) is positioned and interposed with silver foil lO before connecting the flange 1 to the board frame, and is left in place even after completion. In either case, it is easy to use the seven-lunge mounting table 34 as the heating element, so the spacer 33 is made of a metal with good thermal conductivity or a heat conductive material such as alumina ceramics or beryllia porcelain. It is preferred that the material be a good insulator.
さらに他の例によればキャピラリ35により。According to yet another example, by capillary 35.
コネクタワイヤ32を電極端子に接続し1次に第13図
tallに示すように内部リード[21mの弾性を利用
して接続時に内部リード[21aの先端をフランジ1ま
たは銀箔上に接触せしめて膝部を加熱してコネクタワイ
ヤを接続し、その後内部リード部21aの弾性を利用し
て第13図1b)に示すようにもとの位置に復帰せしめ
ることKより実線することができる。この場合素子13
に対する接続な先に行なうと第13m1b)K示すよう
に内部リードsl!121bかもとの位置に復帰するi
tにコネクタワイヤ32を上方に引くというへ−があり
、その対策としてはコネクタワイヤ32に充分なタワミ
を設けておいてコネクタワイヤを第13v!J111に
示す如く接続する。または、はじめ内部リード部21a
へのコネクタワイヤ32の接続を行txい。The connector wire 32 is connected to the electrode terminal, and as shown in FIG. It is possible to connect the connector wire by heating it, and then use the elasticity of the internal lead portion 21a to return it to its original position as shown in FIG. 13 (1b). In this case element 13
If the connection to 13th m1b) K is made first, the internal lead sl! 121b returns to original positioni
There is a problem of pulling the connector wire 32 upward at t, and as a countermeasure, provide sufficient sag in the connector wire 32 and move the connector wire to the 13th v! Connect as shown in J111. Or, the first internal lead part 21a
Connect the connector wire 32 to tx.
内部リード21aかもとの位置に復帰したのち素子13
の電極端子にコネクタワイヤを接続するようにしてもよ
い。After the internal lead 21a returns to its original position, the element 13
A connector wire may be connected to the electrode terminal.
つぎに上記により組立の完了したものをモールド型内に
おさめ、第14図111th)に示すように上記リード
フレーム20における巾の広い方のリード・保持部22
bを底とするレジ/注入パイプライ/(ランナー)36
を構成せしめ、レジ7等の封人材を注入せしめ、レジ/
の固化後モールド治具を取りはずし、リード保持部22
および外部リードWlh2 l bの先端がリードフレ
ーム20に接している場合は膝部も切断し、Wa述の如
くフランジ1を各装置毎に切断すれば第15図に示す如
きwI造物が得られ、これをさらに適当におりまげれば
第16図に示すようにプリント基板の孔にリード部21
を挿入しやすい構造とすることができる。Next, the assembly completed in the above manner is placed in a mold, and as shown in FIG.
b-bottom cash register/injection pipe line/(runner) 36
and inject staff such as cash register 7, etc., and
After solidification, remove the mold jig and remove the lead holding part 22.
If the tip of the external lead Wlh2 lb is in contact with the lead frame 20, the knee part is also cut off, and the flange 1 is cut for each device as described above to obtain a wI structure as shown in FIG. If this is further lowered properly, the lead part 21 will fit into the hole of the printed circuit board as shown in FIG.
The structure can be easily inserted.
第1vtJは7ランジを示す上面図、第2図は第1図に
おけるA−A面縦断面図、第3図は第2図におけるフラ
ンジにニッケル被膜を形成し、かつ銀箔を接続する状態
を示す縦断面図、第4図は第3図に示すフランジに電子
素子を接続した状態を示す縦断面図、第5図はリードフ
レームを示す上面図、第6図はリードフレームを製作す
る一工程におけるリードフレームの一部を示す拡大図、
第7図および第8図はそれぞれリードフレームの一部を
拡大して示す斜視図およびB−B面縦断面図。
第9図および第10図はそれぞれリードフレームとフラ
ンジとの接続状郡な示す断面図および上面図、$111
図園は9−ドフレームと素子との間を電気的に接続する
状態を示す平面図、第11図(b)。
@12vAおよび第13図11+、 (blG”!、イ
ずttl−)”フレームと素子との間を電気的に接続す
る状Iを示す断面図、第141i11al 、 (b)
はそれぞれレジ/注入パイプラインの位置を示す上面図
および側断面図、第15図は完成された電子装置のm−
を示す斜視図であり、第16図は完成された電子装置の
他の一例を示す斜視図である。
lは7ランジ本体、2はモールド材流れ防止用切り込み
部、3はボルト通し孔、4はタブリード挿入部、5はタ
ブリードおさえ部、6はタブリードおさえ部に加える圧
力の方向、7は素子取り付は位置を示す溝、8は素子取
り付は位置、9はニッケル被膜、10は銀箔、11は電
気溶接用電極。
12は電気溶接用電極、13は電子素子、14は金・シ
リコン共晶ろ5材、15は封止体の境界線。
16はタブ挿入部の長さ、20はリードフレーム。
2−1はリード線、21aは内部リード部、21bは外
部リード部、22はリード保持部、22aは巾の狭いリ
ード保持部、22bは巾の広いリード保持部、23はガ
イド孔、24はタブ形成用切りフレームの一主面、29
はリードフレームの一主面と直交する一基@、30はリ
ードフレームとタブリードとの成す角、31はタブリー
ド25aの第 5 図
第 7 図
第 8 図・
第91!11
第14図
第15図
第16図1st vtJ is a top view showing the 7 flange, FIG. 2 is a vertical cross-sectional view taken along the line A-A in FIG. 1, and FIG. 3 is a state in which a nickel coating is formed on the flange in FIG. 4 is a vertical sectional view showing a state in which an electronic element is connected to the flange shown in FIG. 3, FIG. 5 is a top view showing a lead frame, and FIG. 6 is a diagram showing one step in manufacturing the lead frame. An enlarged view showing part of the lead frame,
FIG. 7 and FIG. 8 are a perspective view and a longitudinal sectional view taken along the line B-B, respectively, showing an enlarged part of the lead frame. Figures 9 and 10 are a sectional view and a top view showing the connection between the lead frame and the flange, respectively, $111
FIG. 11(b) is a plan view showing a state in which electrical connection is made between the nine-fold frame and the element. @12vA and FIG. 13 11+, (blG"!, Izuttl-)" Cross-sectional view showing the shape I electrically connecting between the frame and the element, No. 141i11al, (b)
15 is a top view and side sectional view showing the location of the register/injection pipeline, respectively, and FIG.
FIG. 16 is a perspective view showing another example of a completed electronic device. 1 is the 7 flange body, 2 is the notch for preventing mold material flow, 3 is the bolt through hole, 4 is the tab lead insertion part, 5 is the tab lead holding part, 6 is the direction of pressure applied to the tab lead holding part, 7 is the element mounting 8 is a groove indicating the position, 8 is the element mounting position, 9 is a nickel coating, 10 is a silver foil, and 11 is an electric welding electrode. 12 is an electrode for electric welding, 13 is an electronic element, 14 is a gold-silicon eutectic filter 5 material, and 15 is a boundary line of the sealing body. 16 is the length of the tab insertion part, and 20 is the lead frame. 2-1 is a lead wire, 21a is an internal lead part, 21b is an external lead part, 22 is a lead holding part, 22a is a narrow lead holding part, 22b is a wide lead holding part, 23 is a guide hole, and 24 is a lead holding part. One main surface of the cutting frame for tab formation, 29
30 is the angle formed by the lead frame and the tab lead, 31 is the tab lead 25a of the tab lead 25a. Figure 16
Claims (1)
な含む導電性接着材により取付けられた電子素子と、そ
の電子素子に近接して配置された板状リードと、七F)
g子素子の=主面に設けられた電極端子とその板状リー
ドとを電気的接続するコネクタワイヤとより成ることを
特徴とする電子装置。1. A plate-shaped electronic element mounting body, an electronic element attached to the mounting body with a conductive adhesive containing conductive powder, a plate-shaped lead placed close to the electronic element, and 7F)
An electronic device comprising a connector wire that electrically connects an electrode terminal provided on the main surface of a g-element and a plate-like lead thereof.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57096167A JPS584960A (en) | 1982-06-07 | 1982-06-07 | Electronic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57096167A JPS584960A (en) | 1982-06-07 | 1982-06-07 | Electronic device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15449577A Division JPS5810861B2 (en) | 1977-12-23 | 1977-12-23 | electronic equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS584960A true JPS584960A (en) | 1983-01-12 |
JPS6242390B2 JPS6242390B2 (en) | 1987-09-08 |
Family
ID=14157772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57096167A Granted JPS584960A (en) | 1982-06-07 | 1982-06-07 | Electronic device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS584960A (en) |
-
1982
- 1982-06-07 JP JP57096167A patent/JPS584960A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6242390B2 (en) | 1987-09-08 |
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