JPS5849029B2 - semiconductor equipment - Google Patents

semiconductor equipment

Info

Publication number
JPS5849029B2
JPS5849029B2 JP10923576A JP10923576A JPS5849029B2 JP S5849029 B2 JPS5849029 B2 JP S5849029B2 JP 10923576 A JP10923576 A JP 10923576A JP 10923576 A JP10923576 A JP 10923576A JP S5849029 B2 JPS5849029 B2 JP S5849029B2
Authority
JP
Japan
Prior art keywords
conductive plate
semiconductor substrate
elastic body
external
cylindrical elastic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10923576A
Other languages
Japanese (ja)
Other versions
JPS5334468A (en
Inventor
太 徳能
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10923576A priority Critical patent/JPS5849029B2/en
Publication of JPS5334468A publication Critical patent/JPS5334468A/en
Publication of JPS5849029B2 publication Critical patent/JPS5849029B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 この発明は、半導体基体と外部電極または放熱体(以下
、単に「外部電極」と称する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor substrate and an external electrode or a heat sink (hereinafter simply referred to as an "external electrode").

)との間に導電板を有し、かつ導電板と外部電極との位
置決めを行うための位置決め部材と導電板との結合が外
れるのを防止した半導体装置に関するものである。
This invention relates to a semiconductor device having a conductive plate between the conductive plate and the conductive plate and preventing the conductive plate from being disengaged from a positioning member for positioning the conductive plate and an external electrode.

第1図は、半導体基体と外部電極との間に導電板を有す
る従来の平形サイリスタの縦析面図である。
FIG. 1 is a longitudinal sectional view of a conventional flat thyristor having a conductive plate between a semiconductor substrate and an external electrode.

第1図において、1は外部陽極電極、2は半導体基体、
3は半導体基体1と後述の外部會極電極との間に配設さ
れモリブデンなどよりなる厚さの薄い導電板、3aは導
電板3の開札、4は絶縁チューブ、5はコイルバネ、6
は外部陰極電極、6aは外部陰極電極6の凹部、7はマ
イカ板、8はゲートリード支持体、9はゲートリードで
ある。
In FIG. 1, 1 is an external anode electrode, 2 is a semiconductor substrate,
3 is a thin conductive plate made of molybdenum or the like and disposed between the semiconductor substrate 1 and an external electrode to be described later; 3a is an opening for the conductive plate 3; 4 is an insulating tube; 5 is a coil spring;
is an external cathode electrode, 6a is a concave portion of the external cathode electrode 6, 7 is a mica plate, 8 is a gate lead support, and 9 is a gate lead.

この場合、外部陰極電極6と導電板3との位置決めは、
コイルバネ5およびマイカ板7によって外部塩極電極6
の凹部6aの底面より支持されるゲートリード支持体8
によって行われるが、導電板3の上下方向の運動可能距
離に比べて、導電板3の厚さが不十分であるため、導電
板3が、外部陰極電極6の最上面とゲートリード支持体
8との間の間隙を乗り超えて、ゲートリード支持体8と
半導体基体2との間に入り込み、ゲートリード9と半導
体基体2との接触が不完全になるという現象が起こるこ
とがあった。
In this case, the positioning of the external cathode electrode 6 and the conductive plate 3 is as follows:
An external salt electrode 6 is connected by a coil spring 5 and a mica plate 7.
The gate lead support 8 is supported from the bottom surface of the recess 6a.
However, since the thickness of the conductive plate 3 is insufficient compared to the vertical movable distance of the conductive plate 3, the conductive plate 3 is moved between the top surface of the external cathode electrode 6 and the gate lead support 8. In some cases, the particles cross over the gap between the gate leads 9 and the semiconductor substrate 2 and enter between the gate lead support 8 and the semiconductor substrate 2, resulting in incomplete contact between the gate leads 9 and the semiconductor substrate 2.

この発明は、位置決め部材として、外部電極の凹部にそ
う人され導電板の開孔の内壁に外壁が弾性力によって圧
着される筒状弾性体を用い、位置決め部材と導電板との
結合が外れるのを防止して、導電板と外部電極との相対
的位置ずれを不可能にすることにより、従来の欠点を除
去した半導体装置を提供することを目的としたものであ
る。
This invention uses a cylindrical elastic body as a positioning member, which is inserted into a recess of an external electrode and whose outer wall is pressed by elastic force to the inner wall of an aperture in a conductive plate. It is an object of the present invention to provide a semiconductor device which eliminates the conventional drawbacks by preventing relative positional deviation between the conductive plate and the external electrode.

以下、実施例によりこの発明を説明する。The present invention will be explained below with reference to Examples.

第2図はこの発明を平形サイリスタへ適用した一実施例
の縦断面図である。
FIG. 2 is a longitudinal sectional view of an embodiment in which the present invention is applied to a flat thyristor.

第2図において10は外部陽極電極、11は半導体基体
、12は厚さの薄い導電板、1,2aは導電板12の開
孔、13は絶縁チューブ、14は筒状弾性体、15はコ
イルバネ、16は外部陰極電極、16aは外部陰極電極
16の凹部、17はマイカ板、18はゲートリート゛支
持体、19はゲートリードである。
In FIG. 2, 10 is an external anode electrode, 11 is a semiconductor substrate, 12 is a thin conductive plate, 1 and 2a are openings in the conductive plate 12, 13 is an insulating tube, 14 is a cylindrical elastic body, and 15 is a coil spring. , 16 is an external cathode electrode, 16a is a recess of the external cathode electrode 16, 17 is a mica plate, 18 is a gate lead support, and 19 is a gate lead.

上記の平形サイリスタの組み立てに際しては、まず、ゲ
ートリード19をゲートリード支持体18にそう人し、
さらに絶縁チューブ13をゲートリード19にかぶせる
When assembling the above flat thyristor, first place the gate lead 19 on the gate lead support 18,
Furthermore, the insulating tube 13 is placed over the gate lead 19.

次に、外部陰極電極16の凹部16aに筒状弾性体14
(形状の例を第4図atbに示す。
Next, the cylindrical elastic body 14 is placed in the recess 16a of the external cathode electrode 16.
(An example of the shape is shown in Fig. 4 atb.

)をそう人し、さらにコイリバネ15、マイカ板17、
ならびに先に組立完了しているゲートリード19、ゲー
トリード支持体18、および絶縁チューブ13を装着す
る。
), and further coil spring 15, mica plate 17,
Then, the gate lead 19, gate lead support 18, and insulating tube 13, which have been assembled previously, are attached.

次に導電板12を筒状弾性体14にはめ込む。Next, the conductive plate 12 is fitted into the cylindrical elastic body 14.

しかる後、半導体基体11および外部陽極電極10を装
着した後、密封する。
Thereafter, the semiconductor substrate 11 and the external anode electrode 10 are attached and then sealed.

このようにして製作された半導体装置は、導電板12と
筒状弾性体14とが、筒状弾性体14の拡がろうとする
弾性力によって、緊密に一体化されており、導電板12
と筒状弾性体14との結合が外れることがないため、導
電板12が、ゲートリード支持体18と半導体基体11
との間に入り込み、ゲー} IJ−ド19と半導体基体
11との接触が不完全になることはない。
In the semiconductor device manufactured in this manner, the conductive plate 12 and the cylindrical elastic body 14 are tightly integrated by the elastic force of the cylindrical elastic body 14, which tends to expand.
Since the connection between the conductive plate 12 and the cylindrical elastic body 14 does not come off, the conductive plate 12 is connected to the gate lead support 18 and the semiconductor substrate 11.
The contact between the IJ-dead 19 and the semiconductor substrate 11 will not be incomplete.

すなわち、外部陰極電極16と導電板12との横方向の
相対的な位置ずれを無くすることができる。
That is, it is possible to eliminate relative displacement in the lateral direction between the external cathode electrode 16 and the conductive plate 12.

この発明は、上記の平形サイリスタのみならず、平形お
よびスタソド形のダイオード、サイリスタ全般に適用す
ることができる。
The present invention can be applied not only to the above-mentioned flat thyristors, but also to flat and stator-shaped diodes and thyristors in general.

ダイオード場合、従来は導電板と外部電極との位置決め
のため、第1図に示したコイルばね、マイカ板、ゲート
リード支持体などを必要としたが、この発明によれば、
これらの部品は必要でなく。
In the case of a diode, conventionally a coil spring, a mica plate, a gate lead support body, etc., as shown in FIG. 1, were required to position the conductive plate and the external electrode, but according to the present invention,
These parts are not necessary.

導電板と一体化される筒状弾性体のみでよく、価格の面
では安価に、構造の面では簡単にできる。
All that is needed is a cylindrical elastic body that is integrated with the conductive plate, making it inexpensive and simple in structure.

また、サイリスタの場合について、ゲートリードの取り
出し方法が、ゲートリード加圧方法のみでなく、半導体
基体にゲートリードを直接醇接する方法である場合にも
、この発明は同様に適用することができる。
Further, in the case of a thyristor, the present invention can be similarly applied to cases where the method for extracting the gate lead is not only the method of applying pressure to the gate lead but also the method of directly welding the gate lead to the semiconductor substrate.

第3図は、ゲー} IJ−ドを半導体基板に溶接したス
タツド形サイリスタへこの発明を適用したー実施例の縦
断向図である。
FIG. 3 is a longitudinal sectional view of an embodiment in which the present invention is applied to a stud-type thyristor in which a gate IJ is welded to a semiconductor substrate.

第3図において、20はゲートリード、21は絶縁チュ
ーブ、22は筒状弾性体、23は導電板、24は半導体
基体、25は外部陽極電極、26は外部陽極電極である
In FIG. 3, 20 is a gate lead, 21 is an insulating tube, 22 is a cylindrical elastic body, 23 is a conductive plate, 24 is a semiconductor substrate, 25 is an external anode electrode, and 26 is an external anode electrode.

この実施例においても、筒状弾性体220弾性力により
導電板23と筒状弾性体22とが緊密に一体化されてお
り、導電板22と外部雲極電極26とを位置決めするこ
とができる。
In this embodiment as well, the conductive plate 23 and the cylindrical elastic body 22 are tightly integrated by the elastic force of the cylindrical elastic body 220, and the conductive plate 22 and the external cloud electrode 26 can be positioned.

以上詳述したように、この発明による半導体装置は、半
導体基体の主面に対向し対向部分に凹部を有する外部電
極(または放熱体)の上記凹部にそう人され外壁と上記
凹部の内壁との間に間隙を有し上記外部電極(または放
熱体)の上記半導体に対向する而からの突出部を有する
位置決め用の筒状弾性体、および上記半導体基体と上記
外部電極(または放熱体)との間に配設され上記筒状弾
性体の突出部がそう人される開孔を有しこの筒状弾性体
の弾性力によってその外壁が上記開孔の内壁に圧着され
ている導電板を備えているので、筒状弾性体と導電板と
の間の結合が確実に保たれ、上記外部電極(または放熱
体)と導電板との位置決めが行えるので、簡単かつ安価
な構成で、確実に位置決めすることができる効果がある
As described in detail above, in the semiconductor device according to the present invention, an external electrode (or heat sink) that faces the main surface of a semiconductor substrate and has a recess in the opposing portion is inserted into the recess, and the outer wall and the inner wall of the recess are connected. a positioning cylindrical elastic body having a gap therebetween and a protrusion from the external electrode (or heat radiator) facing the semiconductor; and the semiconductor substrate and the external electrode (or heat radiator) A conductive plate is provided between the conductive plates and has an opening through which the protrusion of the cylindrical elastic body is inserted, and the outer wall of the conductive plate is pressed against the inner wall of the opening by the elastic force of the cylindrical elastic body. Because of this, the connection between the cylindrical elastic body and the conductive plate is reliably maintained, and the positioning of the external electrode (or heat sink) and the conductive plate can be performed with a simple and inexpensive configuration. There is an effect that can be done.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の平形サイリスタの縦断向図、第2図はこ
の発明の一実施例である平形サイリスクの縦断面図、第
3図はこの発明の他の実施例であるスタツド形サイリス
タの縦断面図、第4図a,bは弾性体の形状を例示する
斜視図である。 図において、11.24は半導体基体、12,23は導
伝板、12aは導電板12の開孔、14,22は筒状弾
性体、16.26は外部陰極電極、16aは外部塩極電
極16の凹部である。
Fig. 1 is a longitudinal cross-sectional view of a conventional flat thyristor, Fig. 2 is a longitudinal cross-sectional view of a flat thyristor which is an embodiment of the present invention, and Fig. 3 is a longitudinal cross-sectional view of a stud-type thyristor which is another embodiment of the present invention. The top view and FIGS. 4a and 4b are perspective views illustrating the shape of the elastic body. In the figure, 11.24 is a semiconductor substrate, 12 and 23 are conductive plates, 12a is an opening in the conductive plate 12, 14 and 22 are cylindrical elastic bodies, 16.26 is an external cathode electrode, and 16a is an external salt electrode. There are 16 recesses.

Claims (1)

【特許請求の範囲】[Claims] 1 少なくとも一つのPN接合を有する半導体基体、こ
の半導体基体の主面に対向し対向部分に凹部を有する外
部電極(または放熱体)、上記凹部にそう人され外壁と
上記凹部の内壁との間に間隙を有し上記外部電極(また
は放熱体)の上記半導体基体に対向する面からの突出部
を有する位置決め用の筒状弾性体、および上記半導体基
体と上記外部電極(または放熱体)との間に配設され上
記筒状弾性体の突出部がそう人される開孔を有しこの筒
状弾性体の弾性力によってその外壁が上記開孔の内壁に
圧着されている導電板を備えた半導体装置。
1. A semiconductor substrate having at least one PN junction, an external electrode (or heat sink) that faces the main surface of the semiconductor substrate and has a recess in the opposing portion, and an external electrode (or heat sink) that is placed in the recess and between the outer wall and the inner wall of the recess. a positioning cylindrical elastic body having a gap and a protrusion from a surface of the external electrode (or heat sink) facing the semiconductor substrate, and between the semiconductor substrate and the external electrode (or heat sink); A semiconductor comprising: a conductive plate disposed in a conductive plate having an opening through which a protrusion of the cylindrical elastic body is inserted, and an outer wall of the conductive plate being crimped to an inner wall of the opening by the elastic force of the cylindrical elastic body; Device.
JP10923576A 1976-09-10 1976-09-10 semiconductor equipment Expired JPS5849029B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10923576A JPS5849029B2 (en) 1976-09-10 1976-09-10 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10923576A JPS5849029B2 (en) 1976-09-10 1976-09-10 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5334468A JPS5334468A (en) 1978-03-31
JPS5849029B2 true JPS5849029B2 (en) 1983-11-01

Family

ID=14505030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10923576A Expired JPS5849029B2 (en) 1976-09-10 1976-09-10 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5849029B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084736A (en) * 1989-03-06 1992-01-28 Canon Kabushiki Kaisha Image forming apparatus

Also Published As

Publication number Publication date
JPS5334468A (en) 1978-03-31

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