JPS5848516A - Surface acoustic wave device - Google Patents

Surface acoustic wave device

Info

Publication number
JPS5848516A
JPS5848516A JP14720281A JP14720281A JPS5848516A JP S5848516 A JPS5848516 A JP S5848516A JP 14720281 A JP14720281 A JP 14720281A JP 14720281 A JP14720281 A JP 14720281A JP S5848516 A JPS5848516 A JP S5848516A
Authority
JP
Japan
Prior art keywords
electrode
surface acoustic
electrodes
acoustic wave
wave device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14720281A
Other languages
Japanese (ja)
Inventor
Riichi Kodama
児玉 利一
Yoshihiko Yasuhara
安原 吉彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14720281A priority Critical patent/JPS5848516A/en
Publication of JPS5848516A publication Critical patent/JPS5848516A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/145Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14544Transducers of particular shape or position

Abstract

PURPOSE:To decrease the deterioration in characteristics due to overetching and with low spurious response and at high yiled, by impriving the arrangement and shape of an interdigital electrode formed on a piezoelectric substance substrate. CONSTITUTION:A comb tooth part A of an interdigital electrode 2 is constituted by arranging electrodes of a prescribed width W1 at an interval (d). Non comb- tooth parts B, C are constituted by alternately arrnging two types of electrodes, W2, W3 of width where W3>W1>W2 at the interval (d). The widths W1-W3 are set to satisfy expressions, where the wavelength of surface acoustic waves propagated on a piezoelectric substance substrate 1 is denoted as lambda0. Thus, since the number of elecrodes for the parts A and B, C is made equal, the disturbance of wave surface of the surface acoustic waves due to overetching at the formation of electrodes can be obtained, allowing to obtain excellent characteristics.

Description

【発明の詳細な説明】 本発明は、圧電体基板上にインターディジタル電極を形
成した弾性表面波装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a surface acoustic wave device in which interdigital electrodes are formed on a piezoelectric substrate.

弾性表面波装置でライルタ等を構成する場合、圧電体基
板上にインターディジタル電極を形成するが、インター
ディジタルIw電極としては従来、弾性表面波の波長を
λ0としたときλo/40幅を持つ電極によ)構成した
、いわゆるソリッド電極禍造と、λo/8の幅を持つ電
極によシ構成゛した、いわゆるスゾリ,ト電極物造が知
られている。
When constructing a Lyrutor or the like in a surface acoustic wave device, interdigital electrodes are formed on a piezoelectric substrate. Conventionally, interdigital Iw electrodes are electrodes with a width of λo/40, where the wavelength of the surface acoustic wave is λ0. A so-called solid electrode structure is known, which is constructed using an electrode having a width of λo/8, and a so-called solid electrode structure, which is constructed using an electrode having a width of λo/8.

ソリウド亀極は電極幅が大きいため製造時の断縁事故が
少なく、歩留シがよいという利点があるが、電極部と電
極間間隙部との音響□インピーダンスの差に起因する表
面波の反射が大きく、、−にプリアスを発生する欠点が
ある。その点、スプリット電極は上記青畳インピーダン
スの差に、起因する表面波0反射を打消す作用を持、ち
・低スプリアスとできるという長所を有しでいる。
Solid Kame electrodes have the advantage of having a large electrode width, which reduces the number of disconnection accidents during manufacturing and improves yield. is large, and has the disadvantage of generating a spurious signal at -. In this respect, the split electrode has the advantage that it has the effect of canceling out the zero reflection of the surface wave caused by the difference in the above-mentioned blue-tatami impedance, and can produce low spurious.

このようなソリッド電極、スゲリット電極両者の長所を
有効に住がしてインターディジタル電極を構成した例と
して、第1図に示すものが知られている。これは米国特
許第4023124号明細書に開示されたもので、イン
ターディジタル電極の噛合部Aをソリッド電極11て構
成し、非噛合部B、Cをスプリット電極12m、12b
で構成したものである。なお、スプリット電極IJl*
、11bのうち12bは弾性表面波の励振に寄与しない
ダン−電極である。また、弾性表面波の伝搬方向で励振
強度を変化させるために1噛合部Aの電極長を変化させ
て、重み付けを行なっている。
The one shown in FIG. 1 is known as an example of an interdigital electrode that effectively takes advantage of the advantages of both solid electrodes and sugerite electrodes. This is disclosed in U.S. Pat. No. 4,023,124, and the interdigital electrode has a meshing part A made up of a solid electrode 11, and a non-meshing part B and C made up of split electrodes 12m and 12b.
It is composed of In addition, split electrode IJl*
, 11b, 12b is a Dan electrode that does not contribute to the excitation of surface acoustic waves. Further, in order to change the excitation intensity in the propagation direction of the surface acoustic wave, the electrode length of one meshing portion A is changed to perform weighting.

この構成によれば、スプリット電極の併用によってスゲ
リアスを低くできるとともに1スゲリツト電極に部分的
に断線が生じても噛合部Aと非噛合部B、Cとの電気的
導通が維持されるようになっていることから、歩留りが
良好となる。
According to this configuration, by using a split electrode in combination, it is possible to reduce the serge resistance, and even if one sedge electrode is partially disconnected, electrical continuity between the meshing part A and the non-meshing parts B and C can be maintained. As a result, the yield is good.

□ しかしガから、図から明らかなように、噛合部へと
非噛合部巴、Cとでは電極、数が異なっているため、電
極をエツチング形成す゛る際に生じル、t−−パーエツ
チングによって、噛合部^と非噛合部8.Cとで電極占
有率(弾性表面波伝搬方向、に沿う電極幅の総和)が異
なってくる。これはオーバー エッチジグに上る電極幅
の絶対減少量は、電極の本来の幅に関葆なく゛はぼ一定
のためであシ、従っ7C%極占有率は、噛合部^に比べ
数の多い非噛合部tlf、dの方がより低下する。
□ However, as is clear from the figure, the number of electrodes is different between the meshing part and the non-meshing part. Meshing part ^ and non-meshing part 8. The electrode occupancy rate (total electrode width along the surface acoustic wave propagation direction) differs between C and C. This is because the absolute reduction in the electrode width due to over-etching is almost constant, regardless of the original width of the electrode. Therefore, the 7C% electrode occupancy is due to the large number of non-meshing parts compared to the meshing parts. The part tlf,d decreases more.

このことは、インターディジタル電極から放射される弾
性表面波の波面が乱れることを意味し、フィルタ勢を構
成した場合、周波数特性を劣化させる原因となる。
This means that the wavefront of the surface acoustic wave emitted from the interdigital electrodes is disturbed, which causes deterioration of frequency characteristics when a filter array is configured.

本発明は上記の点に鑑みてなされたもので、その目的は
歩留シが高く、低スプリアスで、しかモ特性がオーバー
エツチングによる影譬を受けにくいインターディジタル
電極を有する弾性表面波装置を提供することにある。
The present invention has been made in view of the above points, and its purpose is to provide a surface acoustic wave device having interdigital electrodes with high yield, low spurious, and whose characteristics are not susceptible to overetching. It's about doing.

本発明は、圧電体基板上に形成されるインターディジタ
ル電極の配列形状を改良することによって上記目的を達
成するもので、インターディジタル電極の噛合部を一定
幅W凰Ω電極を藺隔dで配列して構成し、非噛合部をW
、)W。
The present invention achieves the above object by improving the arrangement shape of interdigital electrodes formed on a piezoelectric substrate. The non-meshing part is W.
)W.

〉Wlなる幅Vl’l  #w、の宇種の電極を間隔d
で交互に配列して構成するとともに、圧電体基板上を伝
搬する弾性表面波の波長なλ・としたとき、W l %
 W @を次式 %式%(1) (2) (3) を満たすように設定したことを特徴としている。
〉Wl width Vl'l #w, with a spacing d
When λ is the wavelength of the surface acoustic wave propagating on the piezoelectric substrate, W l %
It is characterized in that W @ is set to satisfy the following formula % (1) (2) (3).

本発明によれば、インターディジタル電極の噛合部2非
噛合部°との電極数が尋しくなるため、電極形成時のオ
ーバーエツチングによる弾性表綿波の波面の乱れがなく
、良好な特性が得られる。しかも、歩留シ、スゾリアス
の抑圧についても、従来と同勢の効果が得られる。
According to the present invention, since the number of interdigital electrodes between the meshing part and the non-meshing part is small, the wavefront of the elastic surface wave is not disturbed due to over-etching during electrode formation, and good characteristics can be obtained. It will be done. Furthermore, the same effects as those of the conventional method can be obtained in terms of yield and suppression of stress.

月下、本発明の実施例を図面を参照して説明する。Embodiments of the present invention will now be described with reference to the drawings.

第2図は本発明の一実施例を示したもので、1はり、1
NbO,、LiTa0.等の圧電体基板、2は基板1上
にアルミ薄膜尋の金属薄膜を蒸着し工。
FIG. 2 shows an embodiment of the present invention, in which 1 beam, 1
NbO, , LiTa0. Piezoelectric substrates such as 2 are fabricated by vapor-depositing a metal thin film of the thickness of an aluminum thin film on the substrate 1.

チングして形−成したインターディジタル電極である。This is an interdigital electrode formed by etching.

インターディジタール電極2は一対のくし形電極、を非
接触で噛み合せたもので、噛合部Aと、非噛合部B、C
とからなる。    、インターディジタル電極、2の
噛合部Aにおいては、各々のくし形電極の要素であるW
lなる一定幅の電極がdなる間隔で配列されている。
The interdigital electrode 2 is a pair of comb-shaped electrodes that are meshed without contact, with a meshing part A and non-meshing parts B and C.
It consists of , interdigital electrode, in the interlocking part A of 2, W which is an element of each comb-shaped electrode
Electrodes having a constant width of l are arranged at intervals of d.

ここで−例として、W @ 、−、λObd中iλ・で
ある。一方1.非噛合部B、CにおいてはW雪。
Here - as an example, W @ , -, iλ· in λObd. On the other hand 1. W snow in non-meshing parts B and C.

Wlなる幅の2種の電極22.23が間隔dで、1 d −sλ、とじた場合、W諺〒百λ・1W 、中Σλ
・に設定される。これらW i −W @ X8 4の値は前記(1)〜(3)式を満たすものである。
When two types of electrodes 22 and 23 with a width of Wl are connected with a distance of d and 1 d - sλ, then
・Set to . These values of W i −W @ X8 4 satisfy the above formulas (1) to (3).

なお、この例では弾性表面波74ルタ等を実現する場合
に所望の周波数特性を持たせる目的で、噛合部Aの電極
1ノの長さを配列方拘において変化させ、弾性表面の励
振強度な伝搬方向で変化させている。これはいわゆる重
み付けであシ、この重み付けは例えば中間部で大きく両
端側で小さくなるように設定される。
In addition, in this example, in order to provide desired frequency characteristics when realizing a surface acoustic wave router, etc., the length of the electrode 1 of the meshing part A is changed depending on the arrangement, and the excitation intensity of the elastic surface is changed. It is changed in the propagation direction. This is so-called weighting, and this weighting is set, for example, so that it is large at the middle part and small at both ends.

このようにインターディジタル電極2を構成すると、図
からも明らかなように噛合部Aを構成する電極21の数
と、非噛合部B、Cの各々を構成する電極22.23の
数は、λ・の距離肖シ2本となって岬しい、従って、イ
ンターディジタル電極2の形成時にオーバーエツチング
が生じても、噛合部Aと非噛合部B、Cとで電極占有率
は等しく保走れる。すなわち、基板1上を伝搬する弾性
表面波が経験する電極幅の総和1dA 、 B 、 C
のいずれの領域においても同一であシ、波面が乱れる仁
とはない。
When the interdigital electrode 2 is configured in this way, as is clear from the figure, the number of electrodes 21 forming the meshing part A and the number of electrodes 22 and 23 forming each of the non-meshing parts B and C are λ Therefore, even if over-etching occurs during the formation of the interdigital electrode 2, the electrode occupancy ratio can be kept equal between the meshing part A and the non-meshing parts B and C. That is, the total electrode width experienced by surface acoustic waves propagating on the substrate 1 is 1 dA, B, C.
It is the same in all regions, and there is no problem where the wave surface is disturbed.

また、非噛合部B、Cにおいては@Wまの電持つととか
ら、両反射波は相殺される。また、電極22から電極2
3に到る部分の電極間間隙部での反射波と、電極23か
ら電極23に到る部分の電極間間隙での反射波とが、(
W1+d)X2一丁λ0の位相差を持つことから、これ
らの両反射波も相殺される。従りて、青畳インーーダン
スの差に起因する反射波の発生が少なく、スプリアスを
低減することができる。
In addition, in the non-meshing portions B and C, both reflected waves are canceled out because @W is held. Also, from the electrode 22 to the electrode 2
The reflected wave at the inter-electrode gap in the part reaching 3 and the reflected wave in the inter-electrode gap in the part from electrode 23 to electrode 23 are (
Since there is a phase difference of W1+d)X2 and λ0, both of these reflected waves are also canceled out. Therefore, the occurrence of reflected waves due to the difference in blue-tatami impedance is reduced, and spurious waves can be reduced.

さらに、この構成によればスジリット電極に相当する電
極221dインターデイジタル電極2の一部にのみ使用
されているので、スプリアト篭極のみでインターディジ
タル電極を構成した場合に比べ、歩留りの向上を図るこ
とが可能である。
Furthermore, according to this configuration, since the electrode 221d corresponding to the striped electrode is used only in a part of the interdigital electrode 2, the yield can be improved compared to the case where the interdigital electrode is configured only with spurious electrodes. is possible.

特に、こあ実施例モは幅W1の電極22は弾性表面波の
励振に直接寄□与しないダミー電極として用いられ、弾
性表面波の励振に関係する噛合部Aの電極21およびこ
れに連設する非噛合部B 、 co電*z 5ttcl
tiヨり広い幅W、、Waの電極が用いられているので
、歩留シ向上に一層有利である。これは電極21〜23
のうち電極22が最も断線を起し易いが、仮に電極22
の断線が一部で生じても弾性表面波素子の性能にtlと
んど影響しないからである。
In particular, in this embodiment, the electrode 22 of width W1 is used as a dummy electrode that does not directly contribute to the excitation of surface acoustic waves, and is connected to the electrode 21 of the meshing part A related to the excitation of surface acoustic waves. Non-meshing part B, coelectric *z 5ttcl
Since electrodes having a width W, . This is electrodes 21-23
Of these, the electrode 22 is the most likely to cause disconnection, but if the electrode 22
This is because even if a wire breakage occurs in a portion of the wire, the performance of the surface acoustic wave element tl is hardly affected.

このように1本発明によれば歩留シがよく、低スf+)
yスであって、しかも製造時のオーバーエツチング等に
起因する特性の劣化の少ない弾性表面波装置を提供する
仁とができる。
In this way, according to the present invention, the yield is good and the f+ is low.
Accordingly, it is possible to provide a surface acoustic wave device that has a low surface acoustic wave pattern and exhibits less deterioration in characteristics due to overetching during manufacturing.

なお、前記実施例で挙げたW−〜Wj、dの値はあくま
で一例で、(1)〜(3)式を満九す値であれば同様の
効果が得られることはいうまでもない。
It should be noted that the values of W- to Wj and d given in the above embodiments are just examples, and it goes without saying that the same effect can be obtained as long as the values satisfy equations (1) to (3).

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の弾性表面波装置の平面図、第2図は本発
明の一実施例に係る弾性12面波装置の平面図である。 1−圧電体基板、2−・インターディジタル電極、A・
・・噛合部、B、C−・非噛合部、21〜23°Jj”
ll[極。
FIG. 1 is a plan view of a conventional surface acoustic wave device, and FIG. 2 is a plan view of a 12-plane acoustic wave device according to an embodiment of the present invention. 1 - piezoelectric substrate, 2 - interdigital electrode, A.
・Matching part, B, C-・Non-meshing part, 21~23°Jj"
ll [pole.

Claims (1)

【特許請求の範囲】 (1)  圧電体基板上にインターディジタル電極を形
成してなる弾性゛表面波装置において、前記インターデ
ィジタル電極の噛合部は一定幅w10′電極を間隔dで
配列して構成され、非噛合部はW’s >vvt >W
lなる幅W、、W、の2種の電極を間隔纏で交互に配列
して構成さhlさらにW1〜W、は、前記圧電体基板上
を伝搬する弾性表面波の波長をλ、とじたとき0、次式
%式%(1) (2) (3) を満足するよ′うに設定されていることを特徴とする弾
性表面波装置。 (2)噛合部の電極に連設する非噛合部の電極として幅
W1の電極な用いたことを特徴とする請求 (3)  インターディジタル電極の噛合部の11極長
を配列方向において変化させたζとを特徴とする特許請
求の範l第1項記載の弾性表面波装fit。
[Scope of Claims] (1) In a surface acoustic wave device in which interdigital electrodes are formed on a piezoelectric substrate, the meshing portion of the interdigital electrodes is constructed by arranging electrodes having a constant width w10' at intervals d. and the non-meshing part is W's >vvt >W
It is constructed by alternately arranging two types of electrodes with widths W, , W, l, and hl, and further, W1 to W, are the wavelengths of the surface acoustic waves propagating on the piezoelectric substrate, λ. 1. A surface acoustic wave device characterized in that the surface acoustic wave device is set to satisfy the following formula % (1) (2) (3) when 0. (2) A claim characterized in that an electrode having a width of W1 is used as the electrode of the non-meshing part connected to the electrode of the meshing part. (3) The length of 11 poles of the meshing part of the interdigital electrode is changed in the arrangement direction. The surface acoustic wave device fit according to claim 1, characterized in that ζ.
JP14720281A 1981-09-18 1981-09-18 Surface acoustic wave device Pending JPS5848516A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14720281A JPS5848516A (en) 1981-09-18 1981-09-18 Surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14720281A JPS5848516A (en) 1981-09-18 1981-09-18 Surface acoustic wave device

Publications (1)

Publication Number Publication Date
JPS5848516A true JPS5848516A (en) 1983-03-22

Family

ID=15424862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14720281A Pending JPS5848516A (en) 1981-09-18 1981-09-18 Surface acoustic wave device

Country Status (1)

Country Link
JP (1) JPS5848516A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042295A (en) * 1984-07-09 1985-03-06 Toshiba Corp Manufacture of single crystal
US5485051A (en) * 1992-09-02 1996-01-16 Mitsubishi Denki Kabushiki Kaisha Surface acoustic wave device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042295A (en) * 1984-07-09 1985-03-06 Toshiba Corp Manufacture of single crystal
US5485051A (en) * 1992-09-02 1996-01-16 Mitsubishi Denki Kabushiki Kaisha Surface acoustic wave device

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