JPS5848454A - Close contact type image sensor - Google Patents
Close contact type image sensorInfo
- Publication number
- JPS5848454A JPS5848454A JP56145470A JP14547081A JPS5848454A JP S5848454 A JPS5848454 A JP S5848454A JP 56145470 A JP56145470 A JP 56145470A JP 14547081 A JP14547081 A JP 14547081A JP S5848454 A JPS5848454 A JP S5848454A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- image sensor
- resistor
- metal layer
- length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000010408 film Substances 0.000 claims abstract description 25
- 229910052737 gold Inorganic materials 0.000 abstract description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 abstract description 2
- 229910001120 nichrome Inorganic materials 0.000 abstract description 2
- 229910018182 Al—Cu Inorganic materials 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- 229910052789 astatine Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はファクタより送信装置、複写装置郷の原稿読取
装置用の密着形イメージセンサに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a contact type image sensor for a transmitting device and a document reading device of a copying device.
最近、ファクシミリ送信装置、複写装置等における原稿
読取は、けい光灯等の光源で原稿を照射し、この反射光
を、多数の°レンズが直線方向（以下、主走査方向とし
１、この方向に垂直な方向−を−Ｊｊ走査方向とする）
に配列された導光部を介して、前記各レンズにほぼ密着
して設けられた光電変換素子を有する受光部に導くこと
によって行われる。Recently, in order to read originals in facsimile transmitters, copying machines, etc., the original is illuminated with a light source such as a fluorescent lamp, and a number of lenses are used to direct this reflected light in a straight direction (hereinafter referred to as the main scanning direction). (vertical direction - is set as -Jj scanning direction)
This is carried out by guiding the light to a light receiving section having a photoelectric conversion element provided in close contact with each of the lenses through light guide sections arranged in a row.
これにより、原稿の１ピツチが１対１すなわち縮小され
ることなく光電的に読込まれるととになる。As a result, one pitch of the original is read photoelectrically on a one-to-one basis, that is, without being reduced.
このような光電変換素子を主走査方向に配列した受光部
は密着形あ゛るいは大形イメージセンサと呼ばれている
。 ”・
従来の密着形イメージセンサによれば、主走査方向に配
置された各ビットエリアにおいて、副走査方向の両端に
第１の電極（共通側電極）と第２の電極（個別的電極）
を設け、この２つの電極間に光導電膜を設けである。し
かしながら、一般的には、各ビットエリアにあっては、
主走査方向（横方向）の長さが副走査方向（縦方向）の
長さより小さいという事実があり、シかも各ビ、ドエリ
ア間にはアイソレージ、ンギャップを設けなければなら
ないので、光導電膜の幅はビットエリアの主走査方向の
長さよりもさらに小さくなり、従って、光導電膜の抵抗
値が比較的大きくなり、この結果、イメージセンサの周
波数特性（高速イ（）が低下し、また、耐雑音性（Ｓ／
Ｎ比）が低くなる５という問題点があった。A light receiving section in which such photoelectric conversion elements are arranged in the main scanning direction is called a contact type or large-sized image sensor. ”- According to a conventional contact image sensor, in each bit area arranged in the main scanning direction, a first electrode (common side electrode) and a second electrode (individual electrode) are placed at both ends in the sub-scanning direction.
A photoconductive film is provided between these two electrodes. However, in general, in each bit area,
Due to the fact that the length in the main scanning direction (horizontal direction) is smaller than the length in the sub-scanning direction (vertical direction), it is necessary to provide an isolation gap between each vibrator and door area. The width becomes even smaller than the length of the bit area in the main scanning direction, and therefore the resistance value of the photoconductive film becomes relatively large. Noise (S/
There was a problem that the N ratio) was low.
本発明の目的は、各ビットエリアにおいて、主走査方向
の両端に第１．第２の電極を薄膜抵抗体として形成し、
これら２つの電極間に光導電膜を形成するという構想に
もとづき、光導電膜の幅をビットエリアの長残副走査方
向の長さに一致せ１めて光導電膜の抵抗値を低竺させ、
これによ、９、イメージセンサの周波数特性および耐雑
音性を向上せしめ、前述の従来形における問題点４を解
決することにある。An object of the present invention is to provide first . forming the second electrode as a thin film resistor;
Based on the concept of forming a photoconductive film between these two electrodes, the width of the photoconductive film is made to match the length of the bit area in the long remaining sub-scanning direction, thereby reducing the resistance value of the photoconductive film. ,
Thereby, 9. The purpose is to improve the frequency characteristics and noise resistance of the image sensor, and to solve problem 4 in the conventional type described above.
以下、図面により本発明を従来形と比較して説明する。Hereinafter, the present invention will be explained with reference to the drawings in comparison with a conventional type.
第１図は′従来の密着形イメージセンサの平面図である
。第１図において、Ａ１−Ａ４は主走査方向Ｘに配列さ
れたピットエリアであって、通常、その主走査方向Ｘの
長さＬｘは副走査方向の長さＬＹより小さい。たとえば
、ム４°判（２１６−幅）で１７２６ピツトの場合にＢ
ｓ Ｌｚ ” １２５ ＃＋ Ｌｙ ＝１３０μであ
る。１〜１〜１−４．２−１〜２−４はＮｌＣｒ７Ａｕ
のような金属電極であって、電極１−１〜１−４は共通
側電極、他方、電極２−１〜２−４は個別的電極と呼ば
れる。３−１〜３−４は光導電膜であって、その幅Ｗは
ビットエリアの主走査方向Ｘの長さしｘよりアイソレー
ジ、ンギャップ長し、だけ小さい。すなわち、
Ｗ ＝＝ Ｌｘ−Ｌｇ
であり、たとえば、アイソレージ、ンギャップ長Ｌｌｒ
を最小−幅の２５μとすれば、Ｗ＝１２５−２５＝１０
０ｔｅｎである。他方、光導電膜の長さしをビ、トエリ
アの副走査方向Ｙの長さＬＹの１／２とすれは、Ｌ＝Ｌ
Ｙ／２＝６５μであり、この場合、光電変換面積（１ビ
ツト当９）は１００Ｉｎ′ＩＬ×６５１ｒｒｒＬであり
、各光導電膜の抵抗値に比例する値しＷは０６５と大き
くなる。このように、光導電膜の幅Ｗはビットエリアの
主走査方向長さＬｘよリアイソレージ、ンギャップ長り
２分だけ小さくなり、光導電膜の抵抗値は比較的大きく
なる。FIG. 1 is a plan view of a conventional contact type image sensor. In FIG. 1, A1-A4 are pit areas arranged in the main scanning direction X, and the length Lx in the main scanning direction is usually smaller than the length LY in the sub-scanning direction. For example, if the size is 4° (216-width) and the pitch is 1726,
s Lz ” 125 #+Ly = 130 μ. 1 to 1 to 1-4. 2-1 to 2-4 are NlCr7Au
The electrodes 1-1 to 1-4 are called common electrodes, and the electrodes 2-1 to 2-4 are called individual electrodes. 3-1 to 3-4 are photoconductive films, the width W of which is smaller than the length x of the bit area in the main scanning direction X by the isolation gap length. That is, W == Lx - Lg, for example, isolation, gap length Llr
If the minimum width is 25μ, then W=125-25=10
It is 0ten. On the other hand, if the length of the photoconductive film is set to 1/2 of the length LY of the bit area in the sub-scanning direction, then L=L.
Y/2=65μ, and in this case, the photoelectric conversion area (9 per bit) is 100In'IL×651rrrL, which is a value proportional to the resistance value of each photoconductive film, and W becomes as large as 065. In this way, the width W of the photoconductive film becomes smaller than the length Lx of the bit area in the main scanning direction by two times the rear isolation gap length, and the resistance value of the photoconductive film becomes relatively large.
第２図は本発明の一実施例としての密着形イメージセン
サの平面図である。嬉２図においては、たとえば、Ｎｔ
Ｃｒ、 Ｃｒ−８１０，、Ｃｒ−８１等の薄膜抵抗体ま
たは微細パターン形成が容易な厚み１００ ｎｍ以下の
薄膜金属層４−１．４−２および５−１〜５−４を各ビ
ットエリアＡ１〜Ａ４の主走査方向の両端に配置し、こ
れらの薄膜抵抗体間に光導電膜３−１′〜３−４′を接
続して形成する。すなわち、光導電膜３−１′〜３−４
′は第１図の光導電膜３−１〜３−４と縦横の関係が逆
になっている。を九、金属電極１−１′および薄膜抵抗
体または薄膜金属層４−１はビットエリアＡ１ 、Ａ、
に共通であり、金属電極１−２′および薄膜抵抗体また
は薄膜金属層４−２はビットエリアＡ、、Ａ４に共通で
ある。FIG. 2 is a plan view of a contact type image sensor as an embodiment of the present invention. For example, Nt
A thin film resistor such as Cr, Cr-810, Cr-81 or a thin film metal layer 4-1, 4-2 and 5-1 to 5-4 with a thickness of 100 nm or less that is easy to form a fine pattern is placed in each bit area A1. -A4 are arranged at both ends in the main scanning direction, and photoconductive films 3-1' to 3-4' are connected between these thin film resistors. That is, photoconductive films 3-1' to 3-4
The photoconductive films 3-1 to 3-4 in FIG. 1 are reversed in terms of length and width. 9. The metal electrode 1-1' and the thin film resistor or thin film metal layer 4-1 are connected to the bit areas A1, A,
The metal electrode 1-2' and the thin film resistor or thin film metal layer 4-2 are common to the bit areas A, . . . A4.
すなわち、アイソレージ、／ギャップは２つのピ、トエ
リア毎にのみ設ければよい。また、薄膜抵抗体または薄
膜金属層５−１〜５−４は各金属電極２−１′〜２−４
′に接続されている。That is, the isolation/gap need only be provided for every two pit areas. Moreover, the thin film resistor or thin film metal layer 5-1 to 5-4 is connected to each metal electrode 2-1' to 2-2.
'It is connected to the.
第２図に示すように１．光導電Ｍ３−１’〜３−４′の
幅Ｗ′はビットエリアの副走査方向長さＬＹに一致して
いる。すなわち、
ｗ−ＬＹ（＝ｔ３ｏ４） □であり、他方
、光導電膜３−１′〜３−４′の長さＬ′は第１図の光
導電膜３−１〜３−４の長さＬと同じであるとすれば、
Ｌ＝Ｌ’＝６５μｍであり、この場合・、光電費換面積
（１ピツト轟り）は１３０＄×６５μｍと大きくなり、
また、各光導電膜３−１′〜３−４′の抵抗値に比例す
る値Ｌ７ｗも０．５０と小さくなる。すなわち、光導電
膜３−１′〜３−４′の幅Ｗが大きくなった分、その抵
抗値は第１図の場合に比べて２３チも小さくなる。As shown in Figure 2, 1. The width W' of the photoconductors M3-1' to M3-4' matches the length LY of the bit area in the sub-scanning direction. That is, w-LY(=t3o4) □, and on the other hand, the length L' of the photoconductive films 3-1' to 3-4' is the length of the photoconductive films 3-1 to 3-4 in FIG. If it is the same as L,
L = L' = 65 μm, and in this case, the photoelectric conversion area (1 pit roar) is as large as 130 $ x 65 μm,
Further, the value L7w proportional to the resistance value of each photoconductive film 3-1' to 3-4' is also reduced to 0.50. That is, since the width W of the photoconductive films 3-1' to 3-4' is increased, the resistance value thereof becomes 23 inches smaller than that in the case of FIG.
第２図においては、最小線幅２５ｔＷｎを薄膜抵抗体ま
たは薄膜金属層４−１．４−２．５−１ 、・・・、５
−４９最小幅Ｗに適用する。この場合、アイソレージ１
ンギヤツプ長Ｌｇは４５１１ｙＩＬとなり、第１図のア
イソレーションギヤ、ｆ長Ｌｇに比べて大幅に大匙くな
り、これは各ピット間の短絡防止に役立つものである。In FIG. 2, the minimum line width of 25tWn is defined as the thin film resistor or thin film metal layer 4-1.4-2.5-1,...,5
-49 Applies to minimum width W. In this case, isolation 1
The gap length Lg is 4511yIL, which is significantly larger than the f length Lg of the isolation gear shown in FIG. 1, which is useful for preventing short circuits between the pits.
次に、第２図のイメージセンサを製造する場合、最小線
幅Ｗ１とする薄膜抵抗体または薄膜金属層４−１．４−
２．５−１〜５−４の微細／母ターンを形成する。すな
わち、この薄膜抵抗体または薄膜金属層ノ母ターンは厚
さ１１００ｎ以下のＮｉＣｒ＋ Ｃｒ−８１０゜Ｃｒ−
８１，ｋｌ、 Ａｔ−Ｃｕ等をリフトオフすることによ
って形成される。このように厚さが小さいと、第２図の
ような抵抗体１４ターンは容易に形成することができる
。なお、この抵抗体または薄膜金属層ノ４ターンに接続
される引出線用金属電極１−１’ 。Next, when manufacturing the image sensor shown in FIG. 2, the thin film resistor or thin film metal layer 4-1.4-
2. Form fine/major turns of 5-1 to 5-4. That is, the main turn of this thin film resistor or thin film metal layer is NiCr+ Cr-810°Cr- with a thickness of 1100 nm or less.
It is formed by lifting off 81,kl, At-Cu, etc. With such a small thickness, 14 turns of the resistor as shown in FIG. 2 can be easily formed. Incidentally, a metal electrode 1-1' for a lead wire is connected to this resistor or the fourth turn of the thin film metal layer.
１−２’ 、 ２−１’〜２−４′線厚さ３０００Ｘ以
上のＮｉＣｒ−Ａｕ、 Ａｕ、 Ａｔ、 Ａｊ−Ｃｕ等
によって形成されており、その抵抗値は薄膜抵抗体また
は薄膜金属層の抵抗値に比べて著しく小さい。1-2', 2-1' to 2-4' are made of NiCr-Au, Au, At, Aj-Cu, etc. with a line thickness of 3000X or more, and the resistance value is the same as that of the thin film resistor or thin film metal layer. It is significantly smaller than the resistance value.
次に、上述の薄膜抵抗体ノ譬ターンによる電位低下につ
いて考察する。たとえば、第２図のｒ、）エリアＡＩに
おいては、素子入力抵抗Ｒ，（Ｋα）は、ただし、Ｋα
＝〆西Ｖち
ｄ
Ｋ３＝−
Ｒ。Next, the potential drop due to the above-mentioned thin film resistor analogy will be considered. For example, in area AI (r, ) in FIG. 2, the element input resistance R, (Kα) is, however, Kα
=〆West Vchid K3=-R.
−Ｗ／
Ｒ８＝ｒ１Ｇ
Ｒｐ ” ｒｐ正
Ｒｄ＝ ｒｄ−
Ｗ／
ｒ、：光導電膜３−１′の明抵抗（Ω／口）ｒｄ：光導
電膜３−１′の暗抵抗（Ω／口）で表わせる゛。第３図
において、薄膜抵抗体または薄膜金輌層４−１．５−１
の抵抗値Ｒ，と光導電膜３−ＩＩの明抵抗値Ｒ１との比
Ｒ，／Ｒ，を横軸に、（Ｒ，（Ｋα）−ａ、）、ｉｐを
縦軸に示す。たとえば、Ｒ１／Ｒ，＝１０− （１％
）のときには、Ｒ９に比して入力抵抗Ｒ，（Ｋ（１）
Ｏ増加は１．１５％、また、Ｒｖ／Ｒ。-W/ R8=r1G Rp ” rpPositive Rd=rd- W/ r,: Bright resistance of photoconductive film 3-1' (Ω/port) rd: Dark resistance of photoconductive film 3-1' (Ω/port) ). In FIG. 3, the thin film resistor or thin film gold layer 4-1.5-1
The ratio R,/R, between the resistance value R, and the bright resistance value R1 of the photoconductive film 3-II is shown on the horizontal axis, and (R, (Kα)-a,), ip is shown on the vertical axis. For example, R1/R,=10- (1%
), the input resistance R, (K(1)
O increase is 1.15% and Rv/R.
＝１０”（１０％）のときには、Ｒ９に比して入力抵抗
Ｒｉ（Ｋα）の増加は１１．７％’である。また、第５
図において、Ｒ，／Ｒ，を横軸に、実効明暗抵抗比（Ｒ
ｄ／Ｒ，）。および明状態における抵抗増加率を縦軸に
示す。第５図における直線ＡはＲ，＝０のときにＲｄ／
Ｒｐ＝ １０であり、直線ＢはＲ１＝０のときＲｄ／Ｒ
ｐｍ １５である。従って、引出線用金属電極１−１’
、 ２−１’による電位降下も考慮してＲ，／Ｒ。= 10'' (10%), the increase in input resistance Ri (Kα) is 11.7%' compared to R9.
In the figure, the horizontal axis is R, /R, and the effective light-dark resistance ratio (R
d/R,). and the resistance increase rate in the bright state is shown on the vertical axis. The straight line A in Fig. 5 is Rd/ when R, = 0.
Rp=10, and the straight line B is Rd/R when R1=0
It's pm 15. Therefore, the metal electrode 1-1' for the lead wire
, R, /R considering the potential drop due to 2-1'.
を２×１０−２以下にすれば、入力抵抗の増加、実効明
暗抵抗比の減少、および明状態における抵抗増加率を無
視することができる。その理由は、薄膜抵抗体または薄
膜金属層は上述の条件Ｒ，／Ｒ，＜ ２Ｘ １０”を満
足させることが可能であるからである。If it is set to 2×10 −2 or less, the increase in input resistance, the decrease in the effective bright-dark resistance ratio, and the rate of increase in resistance in the bright state can be ignored. The reason is that a thin film resistor or a thin film metal layer can satisfy the above-mentioned condition R, /R, < 2X 10''.
以上説明したように本発明によれば、薄膜抵抗体または
薄膜金属層の微細／４ターンの容易性を利用して光導電
膜の抵抗値を低減させることができ、゛これによりイメ
ージセンナの周波数特性および耐雑音性を向上させるこ
とができる。As explained above, according to the present invention, the resistance value of the photoconductive film can be reduced by utilizing the ease of fine/four turns of the thin film resistor or thin film metal layer. Characteristics and noise resistance can be improved.
第１図線従来の密着形イメージセンサの平面図１、第２
図は本発明の一実施例としての密着形イメージセンサの
平面図、第３図および第４図は本発明に係る密着形イメ
ージセンサの特性を示す図である。
１−１〜１−４ 、１−１’ 、 １−２’ 、 ２−
１〜２−４ 、２−１’ 。
２−２’：金属電極、３−１〜３−４ 、３−１’〜３
−４’：光導電膜、４−１ 、４−２ ：第１の薄膜紙
′抗体ｔたは薄膜金属層、５−１〜５−４：第２の薄膜
抵抗体また社薄膜金属層。
特許出願人
富士通株式会社
特許出願代理人
弁理士 青 木 朗
弁理士 西舘和之
弁理士 内 １）幸 男
弁理士 山 口 昭 之Figure 1: Planar views of a conventional contact type image sensor 1 and 2
The figure is a plan view of a contact type image sensor as an embodiment of the present invention, and FIGS. 3 and 4 are diagrams showing characteristics of the contact type image sensor according to the present invention. 1-1 to 1-4, 1-1', 1-2', 2-
1-2-4, 2-1'. 2-2': metal electrode, 3-1 to 3-4, 3-1' to 3
-4': Photoconductive film, 4-1, 4-2: First thin film paper antibody or thin film metal layer, 5-1 to 5-4: Second thin film resistor or thin film metal layer. Patent applicant Fujitsu Limited Patent agent Akira Aoki Patent attorney Kazuyuki Nishidate Patent attorney 1) Yukio Patent attorney Akira Yamaguchi
Claims (1)
イメージセンサにおいて、前記各ｖｙ ）エリアの前記
主走査方向の両端に位置する第１゜第２の薄膜抵抗体ま
たは薄膜金属層と、該第１゜第２の薄膜抵抗体または薄
膜金属層に接続されて形成された光導電膜とを具備する
ことを特徴とする密着形イメージセンサ。 ２、隣接する２つの前記ビットエリアの第１の薄膜抵抗
体または薄膜金属層を共通にした特許請求の範囲第１項
に記載の密着形イメージセンサ。[Scope of Claims] 1. In a contact image sensor in which a plurality of bit areas are arranged in the main scanning direction, the first and second thin film resistors or A contact type image sensor comprising a thin film metal layer and a photoconductive film connected to the first and second thin film resistors or the thin film metal layer. 2. The contact type image sensor according to claim 1, wherein the first thin film resistor or thin film metal layer of two adjacent bit areas is shared.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56145470A JPS6048908B2 (en) | 1981-09-17 | 1981-09-17 | Close-contact image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56145470A JPS6048908B2 (en) | 1981-09-17 | 1981-09-17 | Close-contact image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5848454A true JPS5848454A (en) | 1983-03-22 |
| JPS6048908B2 JPS6048908B2 (en) | 1985-10-30 |
Family
ID=15385981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56145470A Expired JPS6048908B2 (en) | 1981-09-17 | 1981-09-17 | Close-contact image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6048908B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GR861797B (en) * | 1985-07-09 | 1986-11-11 | Agri Shield Inc | Plant microbiocidal compound and method |
-
1981
- 1981-09-17 JP JP56145470A patent/JPS6048908B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6048908B2 (en) | 1985-10-30 |
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