JPS5846065B2 - Solid-state photoelectric conversion device - Google Patents

Solid-state photoelectric conversion device

Info

Publication number
JPS5846065B2
JPS5846065B2 JP52011175A JP1117577A JPS5846065B2 JP S5846065 B2 JPS5846065 B2 JP S5846065B2 JP 52011175 A JP52011175 A JP 52011175A JP 1117577 A JP1117577 A JP 1117577A JP S5846065 B2 JPS5846065 B2 JP S5846065B2
Authority
JP
Japan
Prior art keywords
light
original
receiving element
photoelectric conversion
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52011175A
Other languages
Japanese (ja)
Other versions
JPS5396618A (en
Inventor
一三 小宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP52011175A priority Critical patent/JPS5846065B2/en
Publication of JPS5396618A publication Critical patent/JPS5396618A/en
Publication of JPS5846065B2 publication Critical patent/JPS5846065B2/en
Expired legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
  • Facsimile Heads (AREA)

Description

【発明の詳細な説明】 本発明は、ファクシミリ送信機等の原稿読取系に使用す
る受光素子列よりなる固体光電変換装置に関するもので
ある。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solid-state photoelectric conversion device comprising a light receiving element array used in a document reading system of a facsimile transmitter or the like.

固体光電変換装置は、例えば第1図に示すように、光源
2で原稿1を照明し、その原稿1の反射光を受光して電
気信号に変換するフォトダイオード、電荷転送素子(C
CD)等の受光素子列からなるもので、符号3で示すよ
うに、原稿1に近接して配置されるものである。
For example, as shown in FIG. 1, the solid-state photoelectric conversion device includes a light source 2 that illuminates an original 1, a photodiode that receives reflected light from the original 1, and converts it into an electrical signal, and a charge transfer element (C).
It consists of an array of light-receiving elements such as CD, etc., and is arranged close to the original 1, as shown by reference numeral 3.

このような固体光電変換装置は、通常第2図に示すよう
に、透明基板5上に受光素子4が一列に配置され、透明
保護層6で被覆されているもので、光源2からは透明基
板5及び透明保護層6を通って原稿1を照明し、その原
稿1からの反射光が受光素子4に入射する構成となって
いるものである。
As shown in FIG. 2, such a solid-state photoelectric conversion device usually has light-receiving elements 4 arranged in a line on a transparent substrate 5 and covered with a transparent protective layer 6. 5 and a transparent protective layer 6 to illuminate the original 1, and the reflected light from the original 1 is incident on the light receiving element 4.

このような構成に於いて、副走査方向についてみると、
第3図に示すように光源2から鎖線7で示す範囲で原稿
1を照明した場合、受光素子4の受光範囲は斜線領域8
で示すものとなり、広い範囲からの反射光を受光するこ
とになるので分解能は低いものとなる、この分解能を向
上する為に受光素子4を原稿1に接近させることが考え
られるが、原稿1の照明効率が低下するので、原稿1と
受光素子4との間は成る程度離す必要がある。
In such a configuration, regarding the sub-scanning direction,
As shown in FIG. 3, when the original 1 is illuminated from the light source 2 in the range shown by the chain line 7, the light receiving range of the light receiving element 4 is the shaded area 8.
Since the reflected light is received from a wide range, the resolution is low.In order to improve this resolution, it is possible to move the light receiving element 4 closer to the original 1, but it is possible to Since illumination efficiency decreases, it is necessary to maintain a certain distance between the original 1 and the light receiving element 4.

又主走査方向についてみると、第4図に示すように受光
素子4には、原稿1からそれぞれ斜線領域8の反射光が
入射することになり、隣接受光素子相互には原稿1の反
射光が重複して入射するので分解能が低い欠点があった
In addition, in the main scanning direction, as shown in FIG. 4, reflected light from the shaded area 8 from the original 1 enters the light receiving element 4, and reflected light from the original 1 enters the adjacent light receiving elements. The problem was that the resolution was low because of the multiple incidences.

本発明は、前述の如き従来の欠点を改善したもので、そ
の目的は、受光素子への入射光を制限することにより分
解能を向上させることにある。
The present invention improves the conventional drawbacks as described above, and its purpose is to improve resolution by limiting incident light to the light receiving element.

以下実施例について詳細に説明する。Examples will be described in detail below.

第5図は本発明の実施例の断面図、第6図は上面図であ
り、10は透明基板、11は透明保護層、12はCdS
、ホトダイオード、太陽電池、電荷転送素子(CCD)
等の受光素子、13は不透明層である。
FIG. 5 is a cross-sectional view of an embodiment of the present invention, and FIG. 6 is a top view, in which 10 is a transparent substrate, 11 is a transparent protective layer, and 12 is a CdS
, photodiode, solar cell, charge transfer device (CCD)
13 is an opaque layer.

この不透明層13は受光素子12の受光面より突出し、
且つ受光素子12の受光面の周囲を包囲するように設け
られている。
This opaque layer 13 protrudes from the light receiving surface of the light receiving element 12,
Moreover, it is provided so as to surround the light-receiving surface of the light-receiving element 12.

このような構成により、副走査方向についてみると、第
7図に示すように、光源2から透明基板10及び透明保
護層11を介して原稿1を照明すると、受光素子12に
は不透明層13により入射光が制限されて、原稿1から
の狭い範囲の反射光が入射されることになる。
With this configuration, in the sub-scanning direction, when the original 1 is illuminated from the light source 2 through the transparent substrate 10 and the transparent protective layer 11, as shown in FIG. The incident light is restricted, and reflected light from the original 1 is incident within a narrow range.

即ち、従来と同一の大きさの受光素子を用いた場合に於
いても、狭い範囲の原稿1からの反射光を受光すること
になるので、分解能を向上することができるものとなる
That is, even when a light receiving element of the same size as the conventional one is used, the reflected light from the document 1 in a narrow range is received, so that the resolution can be improved.

又主走査方向についてみると、第8図に示すように、原
稿1からの反射光は、受光素子12には不透明層13に
より斜線領域14の範囲のものとなり、隣接受光素子相
互間の受光範囲が重複することがなくなり、高分解能の
光電変換が可能となる。
In addition, in the main scanning direction, as shown in FIG. 8, the light reflected from the original 1 is reflected by the opaque layer 13 on the light-receiving element 12 within a shaded area 14, and the light-receiving range between adjacent light-receiving elements is This eliminates the possibility of overlapping, and high-resolution photoelectric conversion becomes possible.

以上説明したように、本発明は、透明基板10上に受光
素子12を配列し、その周囲に不透明層13を設け、そ
の不透明層を受光素子12の受光面より突出させたもの
で、透明基板10を通して原稿1を照明し、原稿1から
の反射光を受光素子12で受光して光電変換するもので
、受光素子の周囲に設けた不透明層13により、不要な
入射光を阻止することができるので、受光素子12には
狭い範囲の原稿1からの反射光が入射され、従って高分
解能の光電変換が可能となる。
As explained above, in the present invention, the light receiving elements 12 are arranged on the transparent substrate 10, the opaque layer 13 is provided around the light receiving elements 12, and the opaque layer is made to protrude from the light receiving surface of the light receiving elements 12. The original 1 is illuminated through the light receiving element 10, and the reflected light from the original 1 is received by the light receiving element 12 and photoelectrically converted.Unwanted incident light can be blocked by the opaque layer 13 provided around the light receiving element. Therefore, the light reflected from the original document 1 in a narrow range is incident on the light receiving element 12, thereby enabling high-resolution photoelectric conversion.

この場合、不透明層13の受光素子12の受光面からの
突出高さは、受光素子12の受光面積や原稿1からの距
離等を考慮して選定し得るものである。
In this case, the height of the opaque layer 13 protruding from the light-receiving surface of the light-receiving element 12 can be selected in consideration of the light-receiving area of the light-receiving element 12, the distance from the original 1, and the like.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は固体光電装置と原稿との関係を示す概略斜視図
、第2図は従来の固体光電変換装置の断面図、第3図及
び第4図は副走査方向及び主走査方向の受光説明図、第
5図は本発明の実施例の断面図、第6図はその上面図、
第7図及び第8図は本発明の実施例の副走査方向及び主
走査方向の受光説明図である。 5.10は透明基板、6.11は透明保護層、4.12
は受光素子、13は不透明層である。
Figure 1 is a schematic perspective view showing the relationship between a solid-state photoelectric device and a document, Figure 2 is a sectional view of a conventional solid-state photoelectric conversion device, and Figures 3 and 4 are explanations of light reception in the sub-scanning direction and the main scanning direction. Figure 5 is a sectional view of an embodiment of the present invention, Figure 6 is a top view thereof,
FIGS. 7 and 8 are explanatory diagrams of light reception in the sub-scanning direction and the main scanning direction according to the embodiment of the present invention. 5.10 is a transparent substrate, 6.11 is a transparent protective layer, 4.12
1 is a light receiving element, and 13 is an opaque layer.

Claims (1)

【特許請求の範囲】[Claims] 1 透明基板上に配置した受光素子列の各受光素子の周
囲に、該受光素子の受光面より突出した不透明層を設け
、前記透明基板を通して原稿を照明し、該原稿からの反
射光を前記受光素子により光電変換する構成としたこと
を特徴とする固体光電変換装置。
1. An opaque layer protruding from the light-receiving surface of the light-receiving element is provided around each light-receiving element in a row of light-receiving elements arranged on a transparent substrate, an original is illuminated through the transparent substrate, and the light reflected from the original is reflected by the light-receiving element. A solid-state photoelectric conversion device characterized by having a configuration in which photoelectric conversion is performed using an element.
JP52011175A 1977-02-02 1977-02-02 Solid-state photoelectric conversion device Expired JPS5846065B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52011175A JPS5846065B2 (en) 1977-02-02 1977-02-02 Solid-state photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52011175A JPS5846065B2 (en) 1977-02-02 1977-02-02 Solid-state photoelectric conversion device

Publications (2)

Publication Number Publication Date
JPS5396618A JPS5396618A (en) 1978-08-24
JPS5846065B2 true JPS5846065B2 (en) 1983-10-14

Family

ID=11770709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52011175A Expired JPS5846065B2 (en) 1977-02-02 1977-02-02 Solid-state photoelectric conversion device

Country Status (1)

Country Link
JP (1) JPS5846065B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57197513A (en) * 1981-05-29 1982-12-03 Canon Inc Reader
JPS58220468A (en) * 1982-06-17 1983-12-22 Matsushita Electric Ind Co Ltd Photodetector and manufacture thereof
JPS6051571U (en) * 1983-09-16 1985-04-11 スタンレー電気株式会社 Light source for static elimination in electronic copying machines

Also Published As

Publication number Publication date
JPS5396618A (en) 1978-08-24

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