JPS5844780A - Semiconductor light emitting element - Google Patents
Semiconductor light emitting elementInfo
- Publication number
- JPS5844780A JPS5844780A JP56142920A JP14292081A JPS5844780A JP S5844780 A JPS5844780 A JP S5844780A JP 56142920 A JP56142920 A JP 56142920A JP 14292081 A JP14292081 A JP 14292081A JP S5844780 A JPS5844780 A JP S5844780A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- substrate
- electrode
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 229920005989 resin Polymers 0.000 claims abstract description 31
- 239000011347 resin Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 20
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 9
- 239000000377 silicon dioxide Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 2
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 125000003700 epoxy group Chemical group 0.000 abstract 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 21
- 229910052733 gallium Inorganic materials 0.000 description 20
- 229910052785 arsenic Inorganic materials 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 239000010931 gold Substances 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NBJBFKVCPBJQMR-APKOLTMOSA-N nff 1 Chemical compound C([C@H](NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@@H]1CCCN1C(=O)[C@H](CCCCN)NC(=O)[C@@H]1CCCN1C(=O)CC=1C2=CC=C(C=C2OC(=O)C=1)OC)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCCNC=1C(=CC(=CC=1)[N+]([O-])=O)[N+]([O-])=O)C(=O)NCC(O)=O)C1=CC=CC=C1 NBJBFKVCPBJQMR-APKOLTMOSA-N 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
Abstract
Description
【発明の詳細な説明】
本発明は半導体発光素子に関し、特に、光通信もしくは
計測、制御等において光源として使用される発光ダイオ
ード素子の構成に関するｄ平薗発光ＭＩの発光ダイオー
ドにおいては放射強度分布！（０）が
で懺されるＯＩ・は０＝０（光軸方向）の放射強度であ
る０通常発光ダイオードに用いられる結晶で１屈折率が
３以上と大きなため、
Ｉ（０）＝Ｉｏ（２）Ｏ
と近似される。この余弦法則に従う光源はランバート光
源（拡散面光源もしくは勢輝度光源ともいう）と呼ばれ
る。たとえばＩ （＆ｏ’）＝ Ｉ・／２であり、指向
特性は悪い。このため、発光光を平行ビームにする、焦
点を結ばせる（点スポットにする）など、光ファイバと
の高効率結合や、計測９制御の用途に対しては、もしく
はインジケータとしてみかけの光源サイズを大きくする
などのためには、発光ダイオード素子の発光面上に光学
レンズの配設が不可欠である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor light emitting device, and particularly relates to the structure of a light emitting diode device used as a light source in optical communication, measurement, control, etc. In a light emitting diode of d Hirazono light emitting MI, radiation intensity distribution! OI・, which is represented by (0), is the radiation intensity when 0=0 (in the optical axis direction). Since it is a crystal normally used for light emitting diodes and has a large refractive index of 3 or more, I(0)=Io( 2) Approximately O. A light source that follows this cosine law is called a Lambertian light source (also called a diffuse surface light source or a luminance light source). For example, I(&o')=I·/2, and the directivity characteristics are poor. For this reason, it is useful for highly efficient coupling with optical fibers, such as making the emitted light a parallel beam or focusing it (making it into a point spot), and for measurement 9 control applications, or by using the apparent light source size as an indicator. In order to increase the size, it is essential to provide an optical lens on the light emitting surface of the light emitting diode element.
かかる光学レンズとして透明球が付加された発光ダイオ
ードの構成を第１図に示す０
同図において、１１はＮ型ガリウム書アルミニウム・砒
素（Ｇａ１−ｘ Ａｌｘ Ａｓ 、 Ｘ＝＝０．５〜０
．２５）層、ｌ−２はガリウム・砒素活性層、１３社Ｐ
ｆｆｉガリウム・アルミニウム・砒素（Ｇａ・１１ｊａ
ｓ Ａｓ ）層、１４１に酸化シリコン（５ｉｌｌ）等
からなる絶縁皮膜、１５はＮ１４１ｍ極、１６はｐｍ電
極、１７はｐｓｍｔ＆魚放熱電他である０
そして１８は前記Ｎ型ガリウム・アルミニウム・砒素層
１１表面上に例えばエポキシ系樹脂等の樹脂１９によっ
て固定されたガラス岬からなる透明球である。The structure of a light emitting diode to which a transparent sphere is added as such an optical lens is shown in FIG.
．． 25) layer, l-2 is gallium/arsenic active layer, 13 company P
ffi gallium aluminum arsenic (Ga 11ja
s As ) layer, 141 is an insulating film made of silicon oxide (5ill), etc., 15 is an N141m electrode, 16 is a pm electrode, 17 is a psmt & fish heat dissipation electrode, etc.0, and 18 is the N-type gallium-aluminum-arsenic layer. It is a transparent sphere consisting of a glass cape fixed on the surface of 11 with a resin 19 such as epoxy resin.
かかる構造において、透明球１８がその中心と発光ダイ
オードの表面にほぼ垂直な発光光軸りとが一致するよう
に、且つｙｍガリウム・アルミニウム・砒素層１１の屈
折率ｔｎ６とし、樹脂１９の屈折率ｔｎｓとし、ＮｔＩ
ｌガリウム・アルミニウム・砒素／１１１１の狭面から
透明球１８の頂点Ａｔでの距離ｔ’ｔｔとし、更に発光
ｓ２０からＮｆ１１ガリウムｅアルミニウム・砒素層１
１ｏ表向までの距離ｔ・とすゐ時に発光ｓ２０から透明
球の頂点Ａｔでの距離ＡＦが
１ＡＦｌ＝−ｔｏ ＋ を鵞
ｎ・
となるように、該発光ダイオード上に配置固定されば、
当該発光ダイオードの出力光ｌは光軸りと平行すなわち
懺向にはは喬直な光として出力される０
折率ｎ１）１８とによる光学系の焦点の位置である＠し
かしながら第２図に示されるように、透明球１８がその
中心を発光ダイオードの界面、にほぼ垂直な発光光軸り
から偏寄して配置固着された場合等には、光軸Ｌ ｌ並
ひに出力光１′は前記光軸りとは異った方向となる。こ
のためかかる場合には当該発光ダイオードと元ファイバ
等の光伝送路との光学的結合が良好に行なわれない。In such a structure, the center of the transparent sphere 18 and the light emitting axis substantially perpendicular to the surface of the light emitting diode coincide with each other, and the refractive index of the gallium-aluminum-arsenic layer 11 is set to tn6, and the refractive index of the resin 19 is set to tn6. tns, NtI
The distance from the narrow surface of l gallium aluminum arsenic/1111 to the apex At of the transparent sphere 18 is t'tt, and further from the light emission s20 the Nf11 gallium e aluminum arsenic layer 1
If it is arranged and fixed on the light emitting diode so that the distance AF from the light emission s20 to the apex At of the transparent sphere is 1AFl=-to + when the distance t to the surface of 1o is t.
The output light l of the light emitting diode is parallel to the optical axis, that is, it is output as light that is perpendicular in the vertical direction. When the transparent sphere 18 is arranged and fixed with its center offset from the light emitting axis that is substantially perpendicular to the interface of the light emitting diode, the optical axis L and the output light 1' are The direction is different from the optical axis. Therefore, in such a case, optical coupling between the light emitting diode and the optical transmission line such as the original fiber cannot be achieved satisfactorily.
したがって、前記透明球１８を発光ダイオード狭面の発
光光棚上に正確に配置固着する丸めに、並びに該透明球
１８の保持並びに固着を行なうために１治具が用いられ
るが、微小な透明球を扱う治具の使用は作条を煩雑化し
てしまう。Therefore, one jig is used to accurately arrange and fix the transparent bulb 18 on the light emitting shelf of the narrow surface of the light emitting diode, as well as to hold and fix the transparent bulb 18. The use of jigs that handle this will complicate the cutting process.
一方第３図に示されるように半導体発光素子３１の発光
面に、 ＩＩＭ半球状の透明樹脂体３２を配設し、該透
明樹脂体３２をレンズとして用いることが提案されてい
る。On the other hand, as shown in FIG. 3, it has been proposed that an IIM hemispherical transparent resin body 32 be provided on the light emitting surface of a semiconductor light emitting element 31, and that the transparent resin body 32 be used as a lens.
しかしながら、このような構蔵にあっては、発光＄３３
ｍと透明樹脂体３２とが一４１ｊｋシている場合には、
かかる透明樹脂体３２を通して放射される光の指向性を
高めることができない。However, in such a structure, the luminescence cost is $33
When m and the transparent resin body 32 are 141jk,
The directivity of light emitted through such a transparent resin body 32 cannot be improved.
このため、発光部を透明樹脂体３２の焦点近傍に位置さ
せる必要がある。かかる透明樹脂体２２の曲率半径をｒ
、屈折率をｎＩＬ＝＝１．５とすると焦点距離ずは
＝−３・ｒ
となシ、透明樹脂体３２の頂点から３ｒの距離３３ｂ
Ｋ焦点が位置する。Therefore, it is necessary to position the light emitting section near the focal point of the transparent resin body 32. The radius of curvature of the transparent resin body 22 is r
, if the refractive index is nIL==1.5, then the focal length is -3·r, and the distance 33b is 3r from the apex of the transparent resin body 32.
K focal point is located.
しかしながら、かかる透明樹脂体３２は■−■族化合物
半導体材料に接しているために透明樹脂体と当該半導体
材料との屈折率の相違から、焦点距離扛前記３ｒの距離
ｆから変化してしまう。すなわち、半導体材料の屈折率
をｎ８とすれば、前記焦点距離ｆは、
１ｍ
ｆ’ ＝ｒ＋−（ｆ−ｒ ）
となる。ここでｎＳは、ｍ−ｖ族化合物半導体の場合３
．３〜３．６の値となる。したがってｎ、＜ｎ＠である
ので、前記焦点は透明樹脂体３２から更に遠い半導体発
光素子内に位置することになる０すなわち、発光部は、
透明樹脂体３２からよシ遠い半導体発光素子内に位置す
ることになる０しかしながら、発光部を透明樹脂体３２
から遠ざけること１半導体発光素子３１の実質的な厚さ
の増加を招く０かかる半導体発光素子３１の厚さの増加
は発光部から透明樹脂体３２への光路長の増加すなわち
光損失の増加を来たし、結果として光出力の低下を招来
する０
本発明はこのような従来技術に代えて発光向の指向性並
びに発光出力を向上することができる半導体発光素子を
提供しようとするものである０このため、本発明によれ
ば、内部に発光領域を有する半導体基体の一方の主面に
、前記発光領域の近傍に到達する孔が配設され、透明樹
脂体が前記孔内に充填され且つ前記半導体基体の一方の
主面に略半球状に突出して配設されてなる半導体発光嵩
子が提供される０
以下本発明を実施例をもって詳細に説明する０第４図は
本発明による半導体発光素子の構造を示す。However, since the transparent resin body 32 is in contact with the ■-■ group compound semiconductor material, the focal length changes from the distance f of 3r due to the difference in refractive index between the transparent resin body and the semiconductor material. That is, if the refractive index of the semiconductor material is n8, the focal length f is 1m f' = r+-(f-r). Here, nS is 3 in the case of m-v group compound semiconductor.
．． The value is between 3 and 3.6. Therefore, since n<n@, the focal point is located within the semiconductor light emitting element further away from the transparent resin body 32. In other words, the light emitting section is
However, the light emitting part is located inside the semiconductor light emitting element far from the transparent resin body 32.
1. This leads to a substantial increase in the thickness of the semiconductor light emitting device 31. 0. Such an increase in the thickness of the semiconductor light emitting device 31 causes an increase in the optical path length from the light emitting part to the transparent resin body 32, that is, an increase in optical loss. , resulting in a decrease in light output.The present invention aims to provide a semiconductor light emitting device that can improve the directivity of light emission and the light output, in place of such conventional techniques. According to the present invention, a hole reaching the vicinity of the light emitting region is provided on one main surface of a semiconductor substrate having a light emitting region therein, a transparent resin body is filled in the hole, and the semiconductor substrate has a light emitting region therein. The present invention will be explained in detail with reference to examples below. Figure 4 shows the structure of a semiconductor light emitting device according to the present invention. shows.
同図において、４１は例えば厚さ４００〔μｍ）を有す
るＮ型ガリウム・砒素（ＧａＡａ）基板、４２は厚さ２
０〔μｍ〕程のＮｆ！１アルミニウム・ガリウム・砒素
（ＡｊｚＧａｔ−ｘＡｓ）層、４３は厚さ２〜３（μｍ
） （）アルミニウム・ガリウム・砒素（ｈｌｙＧｍ
ｓ−ｙＡａ）活性層、４４は厚さ２（、ａｍ）のアルミ
ニウム・ガリウム・砒素（Ａｌｘ＊ Ｇａ １ｘ’ Ａ
ｓ ） Ｎである。In the figure, 41 is an N-type gallium arsenide (GaAa) substrate having a thickness of 400 [μm], and 42 is a substrate having a thickness of 2
Nf of about 0 [μm]! 1 aluminum-gallium-arsenic (AjzGat-xAs) layer, 43 has a thickness of 2 to 3 (μm
) () Aluminum, gallium, arsenic (hlyGm
s-yAa) active layer 44 is made of aluminum-gallium-arsenic (Alx*Ga 1x' A) with a thickness of 2 (, am)
s) N.
また４５は厚さ５０００（Ａ）程の二酸化シリコン（５
ｉｎｓ）層から構成される絶縁層、４６Ｆｉ金−亜鉛か
ら構成される電極層、４７扛前記電極層４６に接して絶
縁層４５上まで延在された金電極である。電極４６．４
７はＰ側電極を榊成し、ｖＬ極４７は尚鋏半尋体発光素
子が収容嘔れる容器の基体又は該基体上に配設された電
極に接続される０また４８祉前記ガリウム・砒素基板４
１の裏面（Ｐ側電極が配設される面とは反対の面）に配
設された金・ゲルマニウム（Ａｕ Ｇｅ ）から構成さ
れるＮ側電極、４９Ｆｉ該Ｎ＠電極４８に接続される金
線である０金線４９の他端は前記容器に配設される外部
接続端子に接続される０
そして、本発明に直れば、前記Ｎｆｆ１ガリウム・砒素
基＆４１の中央部が除去されてＰ型アルミニウム・ガリ
ウム−砒素層４２に到達する孔５０が形成され、該孔５
０内を埋め且つＮ型ガリウム・砒素基板４１の層面上に
略半球状に突出するエポキシ樹脂等の透明樹脂体５１が
配設される０かかる透明樹脂体５１の半球状部５１Ａの
半径は２００〔μｍ〕程とされる。45 is silicon dioxide (5000A) thick
an insulating layer made of a 46Fi gold-zinc layer, and a gold electrode extending above the insulating layer 45 in contact with the electrode layer 46. Electrode 46.4
7 is the P-side electrode, and the vL pole 47 is connected to the base of the container in which the light-emitting element is housed, or to the electrode disposed on the base. Board 4
An N-side electrode made of gold/germanium (Au Ge ) disposed on the back surface of 1 (the surface opposite to the surface on which the P-side electrode is disposed), and a gold connected to the 49Fi N@electrode 48. The other end of the gold wire 49 is connected to an external connection terminal provided in the container. According to the present invention, the central part of the Nff1 gallium/arsenic base &41 is removed and the P A hole 50 is formed that reaches the type aluminum gallium-arsenic layer 42;
A transparent resin body 51 made of epoxy resin or the like is disposed to fill the inside of the N-type gallium/arsenic substrate 41 and protrude into a substantially hemispherical shape on the layer surface of the N-type gallium/arsenic substrate 41. The radius of the hemispherical portion 51A of the transparent resin body 51 is 200 mm. It is estimated to be about [μm].
このような構造においては、ガリウム・砒素基板４１に
孔５０が配設され、該孔５０内もレンズ部ｔｋ成する辺
間樹脂材によって充填されるため、透明樹脂体５１の半
球状部５１Ａの頂部から活性層４３０発光部４３Ａに到
る距離ノにおいて屈折率の変化ははとんと無い０すなわ
ちＮ型アルｉ＝ウム・ガリウム・砒素層４２の存在によ
る屈折率の変化嬬無視し得る値である０
したがって、前記ガリウム・砒素基板の厚さを選択する
ことによシ、発光部４３Ａから透明樹脂体５１の頂部ま
での距離ｊは、透明樹脂体５１０半球状部５１Ａの３倍
の値とすることができ、発光部４３Ａを透明樹脂体５１
０半球状部５１Ａの焦点位置に配設することができる０
よって、当該半導体発光素子にあっては、“透明樹脂体
５１から放出される光は高い指向性をもって放出され、
しかも発光部４３Ａから発せられる光はＮ！ＩＩＩアル
（ニウム・ガリウム・砒素層４２を透過するのみで透明
樹脂体５１に到達することができるため光の損失が少く
高い発光効率を得ることができる〇
前述の如き本発明による半導体発光素子は、一般の半導
体発光素子の製造法に従って形成することができる０
すなわち、液相エピタキシャル成長法によりてガリウム
・砒素基板４１上に順次Ｎ屋アルミニウム・ガリウム・
砒素層４２．Ｐｆｆｉアルミニウム・ガリウム・砒素活
性層４３及びＰ屋アルミニウム・ガリウム・砒素層４４
を形成する。In such a structure, a hole 50 is provided in the gallium-arsenic substrate 41, and since the inside of the hole 50 is also filled with the resin material forming the lens portion tk, the hemispherical portion 51A of the transparent resin body 51 is In the distance from the top to the active layer 430 light emitting part 43A, the change in refractive index is negligible 0, that is, the change in refractive index due to the presence of the N-type aluminum gallium arsenic layer 42 can be ignored. 0 Therefore, by selecting the thickness of the gallium-arsenic substrate, the distance j from the light emitting part 43A to the top of the transparent resin body 51 is set to a value three times that of the hemispherical part 51A of the transparent resin body 510. The light emitting part 43A can be made of a transparent resin body 51.
Therefore, in the semiconductor light emitting device, "the light emitted from the transparent resin body 51 is emitted with high directivity,
Moreover, the light emitted from the light emitting section 43A is N! The semiconductor light-emitting device according to the present invention as described above can reach the transparent resin body 51 by only passing through the III-Al(nium-gallium-arsenic layer 42), so that there is little loss of light and high luminous efficiency can be obtained. , which can be formed according to a general semiconductor light emitting device manufacturing method. In other words, Nya aluminum, gallium, and
Arsenic layer 42. Pffi aluminum/gallium/arsenic active layer 43 and Pffi aluminum/gallium/arsenic layer 44
form.
次いで前記Ｐ型アルミニウム・ガリウム・砒素層４４上
に選択的に金・亜鉛電極４６を配設し、骸金・亜鉛電極
４６の周囲ＯＰ型アル建ニウム・ガリウム・砒素層４４
の表出部を覆って二酸化シリコン層４５を被着形成する
。更に前記金・亜鉛電極４６に接して前記二酸化シリコ
ン層４５上に延在される金層４７を形成する０金・亜鉛
層４６は蒸着及びとれに続くフォト・エツチング処理に
よシ形成することができ、二酸化シリコン層４５はスパ
ッタリング等によシ被着され、これに続く７オト・エツ
チング処理により選択的に除去される。更に金層４７Ｆ
ｉメツキ処塩により形成される０本発明によれば、前記
ガリウム・砒素基＠４１の裏面ｔ＠岸して適当な厚さと
した後、かかる裏向に二酸化シリコン層を被着し、これ
をフォト−エツチングによシ込択的に除去して開口を設
ける０そしてかかる二酸化シリコン層をマスクとして、
例えに若干のアンモニアを含む過酸化水素水によりてガ
リウム・砒素基板４１をエツチングし、Ｎ型アルミニウ
ム・ガリウム・砒素層４２に達する孔を形成する。Next, a gold/zinc electrode 46 is selectively provided on the P-type aluminum/gallium/arsenic layer 44, and the OP-type aluminum/gallium/arsenic layer 44 is formed around the metal/zinc electrode 46.
A silicon dioxide layer 45 is deposited over the exposed portion. Further, a gold-zinc layer 46 forming a gold layer 47 extending on the silicon dioxide layer 45 in contact with the gold-zinc electrode 46 may be formed by a photo-etching process following vapor deposition and removal. The silicon dioxide layer 45 is then deposited by sputtering or the like and selectively removed by a subsequent etching process. Furthermore, gold layer 47F
According to the present invention, after forming the back surface of the gallium/arsenic group 41 to an appropriate thickness, a silicon dioxide layer is deposited on the back side, and this is selectively removing the silicon dioxide layer by photo-etching to provide openings and using the silicon dioxide layer as a mask;
For example, the gallium/arsenic substrate 41 is etched using a hydrogen peroxide solution containing some ammonia to form a hole reaching the N-type aluminum/gallium/arsenic layer 42.
次いで前記ガリウム・砒素基板４１の裏面の二酸化シリ
コン層を除去し、かかる裏面に金・ゲルマニウム層４８
を形成して後、各半導体発光素子毎に分割する。Next, the silicon dioxide layer on the back surface of the gallium/arsenic substrate 41 is removed, and a gold/germanium layer 48 is formed on the back surface.
After forming, it is divided into each semiconductor light emitting element.
次いで半導体発光素子の電極４７を容器あるいは適当な
基体上の電極に固着して、当該半導体発光素子を容器あ
るいは適当な基体に搭載する。Next, the electrode 47 of the semiconductor light emitting device is fixed to the electrode on the container or a suitable substrate, and the semiconductor light emitting device is mounted on the container or suitable substrate.
そして当該半導体発光素子の金・ゲルマニウム層４８と
容器あるいは基体に配設された電極とをリード＠４９に
よって接続する。Then, the gold/germanium layer 48 of the semiconductor light emitting device and the electrode provided on the container or the base are connected by leads @49.
しかる後、前記半導体発光素子の前゛記孔内にエポキシ
系透明樹脂５１ｔｆｉ布し、該樹脂５１を硬化せしめる
ことによシ、レンズ付半導体発光素子が形成される。Thereafter, a transparent epoxy resin 51tfi is applied inside the hole of the semiconductor light emitting element and the resin 51 is cured, thereby forming a semiconductor light emitting element with a lens.
なお、一般に半導体発光素子は直方体である。Note that semiconductor light emitting devices are generally rectangular parallelepipeds.
したがってガリウム・砒素基板４１の麺面において接す
る透明樹脂体５１の底面祉円形とはならず、ない。しか
しながら、光軸り方向における透明樹脂体５１０表面は
略球面状とな夛、十分なレンズ効果を有する。なお、半
導体発光素子の裏面（発光面）の形状が正方形である場
合、透明樹脂体の曲率牛径は半導体発光素子の一辺の長
さの１／２〜０，７倍の値を有する。Therefore, the bottom surface of the transparent resin body 51 which is in contact with the noodle surface of the gallium/arsenic substrate 41 does not have a circular shape. However, the surface of the transparent resin body 510 in the optical axis direction has a substantially spherical shape and has a sufficient lens effect. Note that when the back surface (light emitting surface) of the semiconductor light emitting element has a square shape, the diameter of the curvature of the transparent resin body has a value of 1/2 to 0.7 times the length of one side of the semiconductor light emitting element.
成を示す断面図、第負図は本発明による半導体発光素子
の構成を示す断ＷＪ図である。The negative figure is a sectional WJ diagram showing the structure of the semiconductor light emitting device according to the present invention.
図において、 ４１ ガリウム・砒素基板。In the figure, 41 Gallium/arsenic substrate.
４２・・・Ｎｕアルミニウム・ガリウム・砒素層。42...Nu aluminum/gallium/arsenic layer.
４３・・・Ｐ型アルミニウム・ガリウム・砒素活性層。43...P-type aluminum/gallium/arsenic active layer.
４４ ・Ｐａアルミニウム・ガリウム・砒素層。44 ・Pa aluminum gallium arsenic layer.
４３・・・発光領域。43... Light emitting area.
５０ 孔。50 holes.
埠４図Pier 4
Claims (1)
記発光領域の近傍に到達する孔が配設され、透明樹脂体
が前記孔内に充填され且つ前記半導体基体の一方の主面
に略半球状に突出して配設されてなることｔ特徴とする
半導体発光素子０A hole reaching the vicinity of the light emitting region is provided on one main surface of a semiconductor substrate having a light emitting region therein, a transparent resin body is filled in the hole, and a hole is provided on one main surface of the semiconductor substrate, and a hole reaching the vicinity of the light emitting region is provided. A semiconductor light emitting device 0 characterized in that it is arranged in a hemispherically protruding manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56142920A JPS5844780A (en) | 1981-09-10 | 1981-09-10 | Semiconductor light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56142920A JPS5844780A (en) | 1981-09-10 | 1981-09-10 | Semiconductor light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5844780A true JPS5844780A (en) | 1983-03-15 |
Family
ID=15326696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56142920A Pending JPS5844780A (en) | 1981-09-10 | 1981-09-10 | Semiconductor light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5844780A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61500560A (en) * | 1984-04-26 | 1986-03-27 | テクステイルマ アクチエンゲゼルシヤフト | A method for producing a patterned warp knitted fabric and a warp knitting machine for carrying out this method |
| EP1030359A3 (en) * | 1999-02-19 | 2002-08-21 | Micronas GmbH | Layered structure and method of making it |
-
1981
- 1981-09-10 JP JP56142920A patent/JPS5844780A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61500560A (en) * | 1984-04-26 | 1986-03-27 | テクステイルマ アクチエンゲゼルシヤフト | A method for producing a patterned warp knitted fabric and a warp knitting machine for carrying out this method |
| JPS6360142B2 (en) * | 1984-04-26 | 1988-11-22 | ||
| EP1030359A3 (en) * | 1999-02-19 | 2002-08-21 | Micronas GmbH | Layered structure and method of making it |
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