JPS5843501A - Method of producing thin film circuit element - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an OJI manufacturing method for thin film circuit elements, particularly to a method for manufacturing metal thin film resistors.

Arashi conductive metals such as platinum, steel, nickel, I-dust, and platinum-cobalt alloys have the advantage of being able to provide high-resolution resistance temperature detectors by utilizing a high positive temperature coefficient of resistivity. It is stable and highly reproducible, and has been put into practical use in fields that require high performance, such as standard incubation tubes.6 For example, solid platinum has a specific resistance temperature coefficient of +3850ppm/υ! The resistance value of platinum varies linearly with temperature.

However, 1. The specific resistance temperature coefficient of a metal thin film deposited in the form of a thin film generally shows a lower value than that of a solid metal. Concealment coefficient is approximately +2800ppm/
``6 at 0!Jhla body, 1000p more than the case value
Temperatures above Ashi〆℃ also showed small values. Therefore, the resolution of the temperature measuring resistor manufactured was low. - The specific resistance of the deposited thin film is about 1.5 compared to that of the solid, solid film.・5 times, it shows a high value, and when left at high temperature for a long time, the resistivity becomes small, and the temperature directivity coefficient of resistivity is high.
The thin film produced has an instability of
The reliability of the densifier was low.

The third object of the present invention is to eliminate such conventional drawbacks and to provide a method for manufacturing a thin film circuit element CAM which is highly accurate and stable over time.

The method for manufacturing a thin FI11 circuit element of the present invention is a method for manufacturing a thin FI11 circuit element.
Includes a step of depositing a dielectric film on a metal thin film on a substrate, and subjecting the metal thin film 11 (including alloys) to high temperature heat treatment using the dielectric thin film as a protective film against external atmosphere. Mold 6. Please refer to %#A* below and read the book Il! A specific example will be described.

Figure #I1 shows the relationship between the temperature coefficient of resistivity of platinum and heat treatment temperature when platinum is deposited in a thin film form by sputtering, comparing the cases with and without a protective film against 1% outside air atmosphere. A silicon dioxide thin film was obtained by a sputtering method.

As the figure clearly shows, the temperature coefficient of resistivity of the platinum thin film is 8' high. picture. ,2,
The temperature coefficient of resistivity of a platinum thin film without an insulating film is thermal I & physical temperature [800~1! In the QO range of 0., regardless of the heat treatment temperature, compared to a platinum thin film with an eyelid retaining film, the value was about 1100pp/'0.

The specific resistance of the thin film also decreased as the heat treatment temperature f increased, reaching a maximum value of approximately 40-□::.

The rate of decrease in specific resistance was greater in the case of platinum thin films with a metal retention property.

In this way, the present invention is capable of retaining I on the surface even in the case of extremely stable platinum, which does not easily react with various gases or other elements in the atmosphere.
IjIIt-Heat treatment after adhesion.Characteristics of the thin film produced.Solid state! Therefore, this i#4 can provide a highly accurate thin 11-circuit chip with excellent reliability such as reproducibility and stability over time.

The function of the protective film formed on the surface is not clear at present, but it is known that the platinum crystal grain size grows from about 200 OA to about 60 OA by heat treatment, and that the platinum crystal structure, which is a face-centered cubic The lattice constant changes from 2 to 3.92 μm due to heat treatment.
The increase in the lattice constant and the expansion of the lattice constant with the protective film 5
Thin, thin film? In consideration of the large number of cases, the metal layer such as titanium, chromium, aluminum, etc., which is the adhesive layer inserted between the platinum thin film and the single plate, is bonded to the platinum crystal lattice by heat treatment. It can be considered that the protective film on the surface of the solid-dissolved To47.1 had the effect of suppressing this solid-solution reaction and promoting the growth of To47. crystal grains.

The Shuse hook described above is just one example of 6M4i, and according to experiments, there are many 6M4i
When the present invention is summarized with respect to the conductive thin film deposited using the present invention, it becomes clear that the above-mentioned effects are obtained.Therefore, the present invention achieves the above-mentioned effects. ='i-'
ii 笈fi - success is not limited to - □<
Of course, it is often possible to add silicone, cobalt, aluminum, and other impurities to the above-mentioned material. ★Target, good conductivity, electrically conductive thin film - 9' Deposition method 1 is also particularly limited:) It is not intended to be used, but activated substrate, Talinda method, reaction deposition method, plasma It goes without saying that it is possible to use a chemical vapor phase growth method, etc.). In addition, the use of highly conductive thin films should be limited to a limited time.
In addition to thermometers and flow rate sensors, it is also possible to use ordinary resistors with compensation paper and resistance gauges. In addition, it is arguable that the heat treatment temperature, time, desired ridge, and specific resistivity coefficient are the same as the conditions for obtaining the specific resistance. Also, in this embodiment, a silicon dioxide thin film was used as the protective film 2, but a high melting point material tube such as silicon nitride can also be used. Furthermore, the thickness of the film is not particularly limited; however, it is preferably 2000 μm or more.

1ゝ(to

[Brief explanation of the drawings] Diagram 1 shows the platinum thin film, temperature coefficient of resistivity, and temporary 1! FIG. 2 is a diagram showing a comparison between the temperature, the outside atmosphere, and the presence and absence of noodles.

Claims (1)

[Claims] The metal 11111 on the substrate on which the circuit elements are to be formed
″ E, t-work 61.. E, □
1. Includes a step of heat-treating the metal *m as
- A method for manufacturing a thin film circuit element using e-mold.