JPS584255A - Charged-beam optical mirror tube - Google Patents

Abstract

PURPOSE:To provide a charged-beam optical mirror tube which can perform planking, shaping and the like of a charged beam effectively without any need of a lens or the like used for imaging a cross-over image at the deflection center of the deflectors. CONSTITUTION:A first cross-over image (Q1) is formed above a capacitor lens 31 by means of an electron gun, a capacitor lens or the like, and is imaged on a planking aperture mask 32 by means of the lens 31. A first and a second deflecting plate 33 and 34 used for planking are provided, respectively, over and under the aperture mask 32. In addition, the deflection center of the deflecting plates 33 and 34 is made to correspond to the constant position of the center of a second cross-over image (Q2). Owing to the above constitution, since the deflection center of an electron beam deflected with the plates 33 and 34 always corresponds to the constant center of the second cross-over image (Q2), any such inconvenience that the beam moves over a sample surface 33 during the planking is prevented. Besides, any lens used for forming a cross-over image at the deflection center of the plates 33 and 34 becomes unnecessary.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a charged beam optical lens barrel O used in a charged beam device such as an ion beam exposure device during electron beam exposure.
Regarding improvements.

Recently, electron beam exposure equipment has become popular for forming fine A-turns on O specimens such as semiconductor and mask substrates. Most importantly, the detente mechanism and V-mechanism mechanism are explained below.

The first part (2) is a schematic configuration (2) showing a sub-*O electronic V-m party school with one machine in the T run. In the figure, 1 is an optical axis, 2 is a deflection plate for the detuning sensor, a Δ-aperture mask for the detuning layer, 4 is an objective lens, and 1 is a space between samples. ζO place money, lens IK) uneven thickness @jo uneven thickness center ■
Suo + , t @ p is formed. Therefore, when tsutsuking, the polarizing plate jK and the electronic C-m are destroyed in the diagram.
If it is deflected as shown in , it is possible to move Kusuover's P, that is, on the sample 11ij? - It is possible to reduce the strength by a little less without increasing the amount of movement.

The third cabinet is a schematic diagram showing the nine conventional O electron beam optical mirrors equipped with one^** function. In the figure, I is the 1st m antenna lens, r is the 1st vm shaping layer ano-cha mask, 1 is the second container lens, 9 is a deflection plate for beam shaping, 1
- is the armature master for 2F-m shaping, 11 is the third condenser lens, 12 is the deflection plate for V-m positioning, IJ
is the objective lens, and 14 is the sample surface. Also, De,~P4
show the 1st to 40th Tawasaud images, respectively. In the case of ζO, a third turret image Ps is formed at the center of deflection of the deflection plate 90 (by lenses # and #). Then, the electron C-arm is deflected by the deflection plate K, and the l11v-arm shaping arm Δ
- By shifting the image of the channel master 1 with respect to the 82-beam Ik type armature master 1eK], the shape and dimensions of the electron beam can be varied.

Here, if there is no gastric suo Δ image at the center of deflection 1 above, it is assumed that if the shape of V-mu is changed, the sample *1
4, the intensity of the V-me irradiated varies greatly. Therefore, rip
Suor d statue? , is formed at the deflection center of the deflection plate t.

and ζro, Figure 1 and Figure 1! In the case of a good electron beam optical column shown in IIK, the deflection is 1[O at the center of the deflection. A lens is required to form an image on the center of deflection of the deflection plate, which opens up the complexity of the device configuration. In addition, the optical system is used to deflect the line 4 [O deflection center 30 / # I is imaged and there is an umbrella pigeon house), ζ O position shielding t ranking 1 and V - effective form of the roof. It is not 1i to do it.

First, in this 110-dimensional lens barrel, the sensitivity of thickness deviation due to K is relatively small. &Oh, the above-mentioned large pot problem is not only true for the electron beam optical mirror @0, but also for the ion beam mirror.

Main line - Considering the above circumstances, it is a beast to 1, and its purpose is to set the center of deflection of uneven meat II at the center of deflection Δ.
Charge C without requiring a lens etc. to form an image.
-^t) It is an object of the present invention to provide a charged electron beam optical mirror which can effectively perform f-ranking, beam Il shaping, etc., simplify the device configuration, and improve deflection sensitivity.

First, the present invention will be explained in detail. Honji 9I! The O-bone is
At least two sets of deflectors are arranged to sandwich an object point such as a Talos Opa statue, and the charged C-m is deflected with a biased pottery, so that the position of the object point O of Nine and Tortoise is the same as the position before being deflected to the same objective. In the trench, as shown in Fig. 3, the 10th deflector 11 is placed on the upper side, and the second deflector 2j is placed on the lower side, sandwiching the Tarsuo Δ force Q. , the beam is deflected in one direction (to the left) by the tenth deflector 21, and the beam is deflected by the tenth deflector 21.
The beam is deflected by the deflector 21 in the same direction as above. Then, the amount of deflection of each of the first deflectors 11 and 11 is adjusted so that the extension line of the nine beams (indicated by broken lines in the figure) touches the center of the steady position of the four-wave Δ image Q through the 20th deflector 12. .

From this K, the position of the crossover IIQ before the actual beam swarm Δ image q' is deflected. Despite K being shifted to the left, when viewed from the C-m viewing surface 21, the beam is as if it were before the deflection. It appears to have been emitted from Cross-O/f's Q. In other words, the deflection center of the chame is always the Talosau Δ image Q
K exists at the center of the steady position of.

The present invention is applicable to such points, and it is possible to interpose the four points, Δimages, ten points, etc. A parent deflector is arranged, and in order to control the deflection of the charged C-m in the same direction by these O deflectors, and to control the deflection of the charged C-m in the same direction, the uneven thickness center of the nine charged C-m is controlled to be It is possible to set the point O at the center of the steady position. According to Shimarugarite Zero Hatsu 11,
Even if the charged beam is deflected during beam shaping during the t run, the beam will not move on the sample surface due to the ζO deflection. Therefore, V-me shaping can be effectively performed during blanking.

Moreover, since a tassel image or an aperture image is formed at the center of deflection of the deflector, a round lens is not required, so that the device configuration can be simplified. First, two or more sets of deflectors are used to increase the beam size.
In the case of the ion beam exposure apparatus # during beam exposure processing, it is extremely effective to significantly increase the writing speed Ki&.

Hereinafter, details of the present invention will be explained with reference to illustrated embodiments.

No. 411 is a schematic configuration diagram showing a ninth embodiment in which the present invention is applied to an electron beam exposure apparatus. An electron gun and gondenna lens 41 (not shown) form an upper KIIEI gastric sweep Δ image Q, and a ζO cross-over Δ image q is placed on the planar lens Δ-cha master 1j. be united. A blanking 01111 and a 20th deflection @11.14 are arranged above and below the anorcture master J1, respectively. These deflections @11.14 are each computer controlled by the O command from the computer 1# via the Hiro interface 11. During blanking, a predetermined deflection voltage is applied to deflect the electron beams in the same direction, and align the center of the deflection with the steady position center of the ruminal swollen image q on the aperture master J1. It has become something to encourage. First and second deflection plates s1. I4
The electron beam is projected onto the objective lens JfK via the electron beam JfK.

With such a configuration, by applying a predetermined deflection voltage to each of the first and 1g5o uneven thickness @aa, 14Fc during blanking, the electron V can be overvalued by the aperture mask 12. For. In this case, since the center of the uneven thickness of the electron beam O deflected by the winter deflection plate 13.84 is always the center of the third scanning angle Δ image Q, 0 constant position,
The force of the beam moving on the sample surface J1 during blanking
There is no fubekai line, 1, deflection plate IJ, 140, since it forms a cross-over image at the center of deflection, an O lens is not required.
, this provides advantages such as simplifying the configuration.

Note that the zero firing is not limited to the above-mentioned embodiment. For example, the present invention can be applied to an Archier horizontal shadow lid electron beam exposure apparatus using a tertitical illumination method (O)k1 Koehler illumination method as shown in 1g41EIK. In this case, since the object point becomes an aperture image, two sets of deflection plates may be placed with the aperture in between. 119, -son beam exposure equipment, limited ion beam exposure equipment, and other various charges V
- Can be applied to system equipment. For example, when it can be applied to an ion beam exposure position, the travel time of the ion beam from the deflection plate 1J to the uneven thickness plate J4★ (100 P-・C~1μ-・@ ), 1
As shown in the 1148m middle break, a delay road 40 may be provided.

In addition, it is possible to apply 1% to the size of not only Plankind but also V-mu and Jlv-mu plastic surgery. In this case, 11! Deflection 1 [#
As a substitute, two sets of deflection plates 41.41 or ZaO polarization deflection 41゜41 as shown by the dashed lines in the middle can be installed. Of course, it is also possible to use Furthermore, the number of stone-biased pottery from the deflection plate or deflection coil is limited to three sets sandwiching the object point, and there may be more than that, without departing from the gist of the matter. (2) Various modifications can be made to implement the method.

4.1111O Brief Explanation No. iml and irises No. 2 (2) are schematic configuration diagrams showing conventional electron beam optical lens barrels, respectively. MS diagram is a schematic diagram for explaining the thick layer of zero-firing fI, and FIG. 1 is a schematic configuration diagram showing an example in which the method is applied to an electronic V-me exposure apparatus.

zl, sx-deflector, xi-h ndenna lens, 12-
Anocha Master, 11. J4...Polarizing plate for Tsutsun orderer, 1i-interface, J#...Computer, JP
One-objective yJe%J#-sample, [to-beam positioning layer unevenness device, 4m--prolongation circuit, 41, 41, 4 J
-f-h%'fil mercenary board for mercenary board Bentorishi Takeshi Kojie Hikosai 1 figure 2 figure 3 figure 4 WJ Continued from page 1 0 Inventor: Kazuo Tsuji ■ Applicant: Toshiba Machine Co., Ltd. 4-2-11 Ginza, Chuo-ku, Tokyo

Claims (2)

[Claims] (1) Focus the object point on the sample and capture the sample W! In a charged V-me optical system that irradiates a charged beam onto a charged beam, at least O snow layers are placed between the object points, and these O deflectors deflect the charged C-me in the same direction. 9. A charged beam optical lens barrel characterized in that the deflection center of the charged beam is set at the center of the electrical position of the object point via each of the deflectors. (2) The charged C-me optical lens barrel according to claim 11, characterized in that the object point is a vertical scan Δ image or an enlarged Δ-cha image. 5