JPS5842243A - Supporting electrode plate for semiconductor element - Google Patents
Supporting electrode plate for semiconductor elementInfo
- Publication number
- JPS5842243A JPS5842243A JP14070081A JP14070081A JPS5842243A JP S5842243 A JPS5842243 A JP S5842243A JP 14070081 A JP14070081 A JP 14070081A JP 14070081 A JP14070081 A JP 14070081A JP S5842243 A JPS5842243 A JP S5842243A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- electrode plate
- supporting electrode
- copper
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体素子用支持電極板に関し、特に複合構成
形体を有する支持電極板に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a supporting electrode plate for semiconductor devices, and more particularly to a supporting electrode plate having a composite configuration.
周知の如（、半導体素子はシリコンウェハ等のジャンク
ションを支持電極板を介して銅ば一ス上に配設されてい
る。この半導体素子と銅ベースとの間に介在される支持
電極板は、使用中等における温度上昇によってジャンク
ションに負荷される熱応力を軽減する目的を遂行するも
のであり、それ故、支持電極板の熱膨張係数が半導体の
熱膨張係数と近等な値を有しかつ、熱サイクルにより破
損される恐れのない部材を要求され、また、熱および電
気の良導体であることも要求される。As is well known, a semiconductor element is disposed on a copper base via a supporting electrode plate through a junction such as a silicon wafer.The supporting electrode plate interposed between the semiconductor element and the copper base is The purpose is to reduce the thermal stress applied to the junction due to temperature rise during use, etc. Therefore, the supporting electrode plate has a thermal expansion coefficient close to that of the semiconductor, and A member is required that will not be damaged by thermal cycles, and is also required to be a good conductor of heat and electricity.
このような要求を満足しうる支持電極板用部材としては
、これまで、タングステンやモリブデン等が用いられて
きたが、このような金属材料は材料自体の価格が高価で
あり、加工を施すのが困難であり製品としての歩留りも
悪いために、タングステンやモリブデン等から製造され
る支持電極板は非常に高価なものにならざるを得ないも
のであった。それ故、このような金属材料と同等な物性
を有しかつ廉価に製造できる支持電極板用金属部材の出
現が希求されている。Until now, materials such as tungsten and molybdenum have been used as supporting electrode plate members that can satisfy these requirements, but these metal materials are expensive and difficult to process. Because this is difficult and the yield of the product is low, supporting electrode plates manufactured from tungsten, molybdenum, etc. have had to be extremely expensive. Therefore, there is a desire for a metal member for supporting electrode plates that has physical properties equivalent to those of such metal materials and can be manufactured at low cost.
従って１本発明の目的は、上述の如き欠点を除去し、所
要の物性を有しかつ加工性や製品の歩留りを良好にでき
、もって安価な支持電極板を提供することにある。Accordingly, one object of the present invention is to provide a support electrode plate which eliminates the above-mentioned drawbacks, has the required physical properties, has good processability and product yield, and is inexpensive.
本発明による支持電極板は、従来の支持電極板用材料に
比して非常に安価でありかっ、導電性の良好な銅板と熱
膨張係数の小さいアンバ板とを両者間の組合せ構造や板
厚比を適当に選定することによって、タングステンやモ
リブデン等の支持電極板用部材として良好な物性値と同
等な部材で形成される。ここにおいて、周知の如（、半
導体装置に内在さ°れる銅原子は素子ジャンクションの
シリコンウェハに拡散され易（、それにより、半導体装
置の電気的特性を著るしく劣化させるものとしてその使
用が忌避されており、銅板をその構成素材として適用さ
れた複合板の適用範囲は、半導体装置の組立工温度や処
理工程において銅原子のシリコン部材への拡散が生ずる
恐れのない部分に限定的に使用されている。それ故５本
発明の銅板とアンバ板との複合板形体を有する支持電極
板は、その銅層からの銅原子が組立工程等においてシリ
コンウェハに拡散および／または溶出して汚染してしま
うのを防止するよう、該複合板の端面を含む全表面に銅
原子の拡散および／または溶出を阻止するための障壁層
が設けられるものである。The supporting electrode plate according to the present invention is very inexpensive compared to conventional materials for supporting electrode plates, and has a combination structure and plate thickness between a copper plate with good conductivity and an umber plate with a small coefficient of thermal expansion. By appropriately selecting the ratio, it can be made of a material such as tungsten or molybdenum that has good physical properties and is equivalent to a material for a supporting electrode plate. As is well known, copper atoms contained in semiconductor devices are easily diffused into silicon wafers at device junctions, and their use is therefore avoided as they significantly deteriorate the electrical characteristics of semiconductor devices. The scope of application of composite plates using copper plates as their constituent material is limited to areas where there is no risk of diffusion of copper atoms into silicon components at the assembly temperature or processing process of semiconductor devices. Therefore, the supporting electrode plate of the present invention having a composite plate shape of a copper plate and an umber plate is free from contamination caused by copper atoms from the copper layer diffusing and/or eluting into the silicon wafer during the assembly process, etc. In order to prevent storage, a barrier layer for preventing diffusion and/or elution of copper atoms is provided on the entire surface of the composite plate including the end faces.
このような障壁層として適用できる部材は、支持電極板
を構成する銅およびアンバ、およびシリコンウェハや電
極等の半導体装置の部品との接着性が良好であり、かつ
、それ自体が半導体装置の特性に支障を与える恐れのな
い物性を有する材料であるべきであり、更に障壁層の形
成が工業的に十分に実用化できる部材であるべきである
。A material that can be used as such a barrier layer is one that has good adhesion to the copper and umber that make up the support electrode plate, as well as parts of the semiconductor device such as silicon wafers and electrodes, and that has the characteristics of the semiconductor device itself. It should be a material that has physical properties that do not cause any problems, and it should also be a material that allows the formation of a barrier layer to be fully put to practical use industrially.
障壁層に適用できる部材にはニッケルまたはニッケルー
リン合金のようなニッケル基合金、銀または銀基合金あ
るいはアルミニウム等がメッキ法によって容易に前記複
合板に設けることのできるものとして掲げられる。この
うち、特に、ニッケルまたはニッケル基合金が障壁層と
しての被膜の生成や半導体装置の組立て性能あるいはそ
の使用性能等の観点から最も実用性の高い障壁層のため
の部材である。Examples of materials that can be applied to the barrier layer include nickel or a nickel-based alloy such as a nickel-phosphorus alloy, silver or a silver-based alloy, or aluminum, which can be easily provided on the composite plate by a plating method. Among these, nickel or a nickel-based alloy is particularly the most practical material for the barrier layer from the viewpoint of formation of a film as a barrier layer, performance in assembling a semiconductor device, performance in use thereof, and the like.
また、この障壁層は上述の部材のうちの１つの部材によ
る単一層で形成しても、あるいは複数（２〜６種程度）
の部材を用いて複数の層に形成しても良い。Moreover, this barrier layer may be formed as a single layer of one of the above-mentioned members, or may be formed of a plurality of layers (approximately 2 to 6 types).
It is also possible to form a plurality of layers using the above members.
次に１本発明の実施例による支持電極板について図面と
共に更に説明する。Next, a supporting electrode plate according to an embodiment of the present invention will be further explained with reference to the drawings.
第１および２図に示されるように、支持電極板の基本的
形体を画定する複合板１は、アンバ飯２または銅板６の
両面に銅板３またはアンバ板２がそれぞれ被覆されたも
のである。このアンバ板２および銅板３から構成される
複合板１は、第６および４図に示されるように、その端
面な含む全表面に障壁層４を設けられて本発明の支持電
極板を形成される。As shown in FIGS. 1 and 2, a composite plate 1 defining the basic shape of a supporting electrode plate is a composite plate 1 in which both sides of an umber plate 2 or a copper plate 6 are coated with a copper plate 3 or an umber plate 2, respectively. As shown in FIGS. 6 and 4, the composite board 1 composed of the umber board 2 and the copper board 3 is provided with a barrier layer 4 on its entire surface including its end faces to form the supporting electrode board of the present invention. Ru.
上述の如く形成される０、 ５１１１１厚の２種類の複
合板と、同様な０．５順厚の２種類の複合板に障壁層と
して約１０μｍ厚のニッケル層がそれぞれ施されたもの
（すなわち、本発明の支持電極板）と、従来のタングス
テンわら形成された０、 ５１ｍ厚の同様な支持電極板
とを用いて、水素雰囲気中で、鉛−錫系半田により、４
５０ｔ：’の温度で半導体素子のシリコンウェハと銅ベ
ースとの間に支持電極としてそれぞれ取付け、半導体装
置を組立て、それらの電気的特性を測定したところ、障
壁層としてのニッケル層を有する本発明の支持電極板（
第３および４図）を適用された半導体装置と従来のタン
グステンからなる支持電極板を適用されたものとが所要
の電気的特性をそれぞれ示したのに対し、障壁層を有し
ない複合板（第１および２図）のみを支持電極板として
適用された半導体装置は所要の電気的特性を満足するに
は極めて不十分なものであった。Two types of composite plates with a thickness of 0 and 51111 formed as described above and two types of composite plates with a similar thickness of 0.5 were each coated with a nickel layer about 10 μm thick as a barrier layer (i.e., Using the supporting electrode plate of the present invention) and a similar supporting electrode plate having a thickness of 0.51 m and made of conventional tungsten straw, 4.5 m of lead-tin solder was used in a hydrogen atmosphere.
They were attached as supporting electrodes between the silicon wafer and copper base of a semiconductor element at a temperature of 50 t:', assembled semiconductor devices, and measured their electrical characteristics. Support electrode plate (
A semiconductor device to which a conventional supporting electrode plate made of tungsten was applied (Figs. 3 and 4) exhibited the required electrical characteristics, whereas a composite plate without a barrier layer (Figs. 1 and 2) as supporting electrode plates were extremely insufficient to satisfy the required electrical characteristics.
以上述べた如く、本発明によれば、支持電極板の基礎的
素材として非常に安価な銅およびアンバを適用でき、障
壁層を設けられることにより銅原子の拡散および／また
は溶出を防止できるために処理温度や使用温度の高い半
導体素子のための支持電極板として広汎に使用できるも
のである。更に、従来のタングステンやモリブデン等の
支持電極板と同等な物性および電気的特性を確保できろ
ばかりでなく、加工性を向上できかつ製品の歩留りを向
上できる利点をも有するものである。As described above, according to the present invention, very inexpensive copper and umber can be used as basic materials for the supporting electrode plate, and by providing a barrier layer, diffusion and/or elution of copper atoms can be prevented. It can be widely used as a supporting electrode plate for semiconductor devices that require high processing and operating temperatures. Furthermore, it not only ensures physical properties and electrical properties equivalent to those of conventional supporting electrode plates such as tungsten and molybdenum, but also has the advantage of improving processability and product yield.
また、障壁層が複合板を外気から密封するよう設けられ
ることにより、室内雰囲気にお℃・で、複合板を構成す
る銅板やアンｊ板が変色や発銹するのを確実に阻止でき
、かつ、十分に大きな強度を有することにより、その保
管や取扱℃・を簡便イヒできるものである。In addition, by providing a barrier layer to seal the composite board from the outside air, it is possible to reliably prevent the copper plates and Annex plates that make up the composite board from discoloring or rusting in the indoor atmosphere at °C. By having sufficiently high strength, it can be easily stored and handled at ℃.
第１および２図は本発明の実施例におけろ複合板を示す
断面図。第６および４図（ま本発明の実施例による支持
電極板を示す図。
１−ｍ−複合板
２−一一アンバ板
６−−−銅板
４−ｍ−障壁層
第２図
２ ３1 and 2 are cross-sectional views showing a composite plate in an embodiment of the present invention. FIGS. 6 and 4 (FIGS. 6 and 4 are diagrams showing supporting electrode plates according to embodiments of the present invention.
Claims (1)
３）またはアンバ板（２）がそれぞれ設けられた複合板
（１）の端面を含む全表面に障壁層（４）が被覆されて
いることを特徴とする半導体素子用支持電極板。 （２）前記被覆層ｆｉｌはニッケル、ニッケル基合金、
銀ｆたは基合金からなる単一層、または前記金属材料の
うちの複数の材料による複数層であることを特徴とする
特許請求の範囲第（１）項に記載の半導体素子用支持電
極板。[Claims] Copper plates (
3) A support electrode plate for a semiconductor device, characterized in that the entire surface including the end face of a composite plate (1) provided with an umber plate (2) or an umber plate (2) is coated with a barrier layer (4). (2) The coating layer fil is nickel, a nickel-based alloy,
The support electrode plate for a semiconductor device according to claim 1, wherein the support electrode plate is a single layer made of a base alloy of silver or a plurality of layers made of a plurality of the metal materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14070081A JPS5842243A (en) | 1981-09-07 | 1981-09-07 | Supporting electrode plate for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14070081A JPS5842243A (en) | 1981-09-07 | 1981-09-07 | Supporting electrode plate for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5842243A true JPS5842243A (en) | 1983-03-11 |
Family
ID=15274697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14070081A Pending JPS5842243A (en) | 1981-09-07 | 1981-09-07 | Supporting electrode plate for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5842243A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59228747A (en) * | 1983-06-09 | 1984-12-22 | Hitachi Cable Ltd | Electrode material for semiconductor |
| JPS6015937A (en) * | 1983-07-07 | 1985-01-26 | Hitachi Cable Ltd | Cladding material for semiconductor support electrode |
| JPS6016539U (en) * | 1983-07-08 | 1985-02-04 | 日立電線株式会社 | Support electrode plate for semiconductor devices |
| JPS6041234A (en) * | 1983-08-17 | 1985-03-04 | Hitachi Ltd | Semiconductor device |
| JPS61138482A (en) * | 1984-12-11 | 1986-06-25 | 株式会社フジクラ | Removal of oxide film for cable conductor connection |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50106581A (en) * | 1974-01-29 | 1975-08-22 |
-
1981
- 1981-09-07 JP JP14070081A patent/JPS5842243A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50106581A (en) * | 1974-01-29 | 1975-08-22 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59228747A (en) * | 1983-06-09 | 1984-12-22 | Hitachi Cable Ltd | Electrode material for semiconductor |
| JPH0430184B2 (en) * | 1983-06-09 | 1992-05-21 | ||
| JPS6015937A (en) * | 1983-07-07 | 1985-01-26 | Hitachi Cable Ltd | Cladding material for semiconductor support electrode |
| JPS6016539U (en) * | 1983-07-08 | 1985-02-04 | 日立電線株式会社 | Support electrode plate for semiconductor devices |
| JPS6041234A (en) * | 1983-08-17 | 1985-03-04 | Hitachi Ltd | Semiconductor device |
| JPS61138482A (en) * | 1984-12-11 | 1986-06-25 | 株式会社フジクラ | Removal of oxide film for cable conductor connection |
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