JPS5840823A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5840823A JPS5840823A JP13850381A JP13850381A JPS5840823A JP S5840823 A JPS5840823 A JP S5840823A JP 13850381 A JP13850381 A JP 13850381A JP 13850381 A JP13850381 A JP 13850381A JP S5840823 A JPS5840823 A JP S5840823A
- Authority
- JP
- Japan
- Prior art keywords
- boron
- layer
- diffused
- skin
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052796 boron Inorganic materials 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000012298 atmosphere Substances 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 3
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 3
- 239000011574 phosphorus Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置の製法、特に、ボロンを半導体基体
表面に高濃度に拡散する製法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for diffusing boron at a high concentration onto the surface of a semiconductor substrate.
半導体基体のｐ型溝電層に電極を低抵抗接触させるよう
な場合、ｐ型溝電層の不純物濃度が低いと良好な低抵抗
接触が得られないので、電極を設ける個所に選択的にボ
ロンを高濃度に拡散することがある。その場合、従来は
、ボロンをデポジションした後ボロンガラスを除去し、
酸素雰囲気中でボロンが拡散された表面を酸化（ボロン
スキン酸化）シているが、ボロンデポ１〜のコノタクト
抵抗を測定してみると、かなり大きくなっており、良好
な低抵抗接触が得られないことが確認された。When bringing an electrode into low-resistance contact with the p-type trench conductor layer of a semiconductor substrate, if the impurity concentration of the p-type trench conductor layer is low, good low-resistance contact cannot be obtained. may be diffused to high concentrations. In that case, conventionally, boron glass is removed after boron is deposited,
The surface on which boron has been diffused is oxidized (boron skin oxidation) in an oxygen atmosphere, but when we measure the contact resistance of boron deposits 1 to 1, we find that it is quite large, making it impossible to obtain good low-resistance contact. This was confirmed.
その理由を検討したところ、ボロンが酸化膜に外部拡散
して、半導体基体表面で、不純物濃度が低下しているこ
とが確認された。When the reason for this was investigated, it was confirmed that boron diffused outward into the oxide film, reducing the impurity concentration on the surface of the semiconductor substrate.
それゆえ、本発明の目的は高濃度にボロンを拡散するこ
とができる半導体装置の製法を提供することにある。Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor device that can diffuse boron at a high concentration.
本発明製法の特徴とするところは、酸素雰囲気下でボロ
ンスキン酸化を行う前に９素雰囲気中で熱処理してボロ
ンを半導体基体中に拡、散することにある。The manufacturing method of the present invention is characterized in that before boron skin oxidation is performed in an oxygen atmosphere, boron is diffused into the semiconductor substrate by heat treatment in a 9 element atmosphere.
次に実施例に基づいて本発明を説明する。Next, the present invention will be explained based on examples.
先ず、ｎ型導電性の７リコンウエハが用意され、ガリウ
ム拡散により、ｐｎｐ３層構造が作られた。First, a 7-lion wafer with n-type conductivity was prepared, and a pnp three-layer structure was created by gallium diffusion.
その後、−主表面側のｐ層の所定領域および残りの主表
面全面にボロンをデポジションし、この時に形成される
ボロンガラスを除去した後、９素雰囲気中で一定１１．
Ｉ１間熱処理して約数ミクロンボロンを拡１１女シてか
ら、酸素雰囲気中で熱処理してボロンスキン酸化を連続
して行った。その後、−主表面側のｐ層の所定領域にリ
ンを拡散してｐｎｐＨ４層構造とした。最後にシリコン
ウェハ」二の酸化膜を除去し、ボロンスキン酸化を行っ
た部分にゲート電極、残りの主表面上にアノード電極、
そして、リン拡散を行って得たｎ層にカソード電極を低
抵抗接触させた。After that, boron is deposited on a predetermined region of the p-layer on the main surface side and on the entire remaining main surface, and after removing the boron glass formed at this time, a constant 11.
Boron was expanded by several microns by heat treatment for 11 minutes, and then heat treatment was performed in an oxygen atmosphere to continuously oxidize the boron skin. Thereafter, phosphorus was diffused into a predetermined region of the p-layer on the -main surface side to form a pnpH four-layer structure. Finally, the second oxide film of the silicon wafer is removed, and the gate electrode is placed on the boron skin oxidized area, and the anode electrode is placed on the remaining main surface.
Then, a cathode electrode was brought into low resistance contact with the n-layer obtained by performing phosphorus diffusion.
このようにして得たサイリスタでは、アノード電極およ
びゲート電極のいずれにおいても良好な低抵抗接触が確
認された。それは、窒素雰囲気中で一旦、熱処理してボ
ロンを半導体基体中に拡散しているため、酸素雰囲気中
でボロンスキン酸化を行っても、外部拡散があまり起ら
ず、高不純物濃度のｐ型表面層が形成されていることに
よる。In the thyristor thus obtained, good low resistance contact was confirmed at both the anode electrode and the gate electrode. Because boron is diffused into the semiconductor substrate through heat treatment in a nitrogen atmosphere, even if boron skin oxidation is performed in an oxygen atmosphere, external diffusion does not occur much, and the p-type surface with a high impurity concentration This is due to the formation of layers.
本発明は以上の低抵抗接触を行う部分以外にボロン拡散
により高不純物“濃度表面層を形成する場１０８−In the present invention, a high impurity concentration surface layer is formed by boron diffusion in areas 108-
Claims (1)
ロンガラスを除去して９素雰囲気中でボロンを半導体基
体中に拡散した後、酸素雰囲気中でボロンスキン酸化を
連続的に行なうことを特徴とする半導体装置の製法。1. Boron is deposited on one main surface of a semiconductor substrate, boron glass is removed, boron is diffused into the semiconductor substrate in an atmosphere of 9 elements, and then boron skin oxidation is performed continuously in an oxygen atmosphere. A method for manufacturing semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13850381A JPS5840823A (en) | 1981-09-04 | 1981-09-04 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13850381A JPS5840823A (en) | 1981-09-04 | 1981-09-04 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5840823A true JPS5840823A (en) | 1983-03-09 |
Family
ID=15223642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13850381A Pending JPS5840823A (en) | 1981-09-04 | 1981-09-04 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5840823A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5538097A (en) * | 1978-09-07 | 1980-03-17 | Ibm | Method of doping silicon substrate by boron diffusion |
-
1981
- 1981-09-04 JP JP13850381A patent/JPS5840823A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5538097A (en) * | 1978-09-07 | 1980-03-17 | Ibm | Method of doping silicon substrate by boron diffusion |
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