JPS5834751U - transistor - Google Patents

transistor

Info

Publication number
JPS5834751U
JPS5834751U JP12979881U JP12979881U JPS5834751U JP S5834751 U JPS5834751 U JP S5834751U JP 12979881 U JP12979881 U JP 12979881U JP 12979881 U JP12979881 U JP 12979881U JP S5834751 U JPS5834751 U JP S5834751U
Authority
JP
Japan
Prior art keywords
region
emitter
comb
electrode
ohmic contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12979881U
Other languages
Japanese (ja)
Inventor
田中　忠彦
田頭　一夫
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP12979881U priority Critical patent/JPS5834751U/en
Publication of JPS5834751U publication Critical patent/JPS5834751U/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図はメツシュエミッタ構造のトランジスタを説明す
る上面図、第２図Ｃｔ本考案のトランジスタの一部を説
明する上面図、第３図は本考案の動作原理を説明するた
めの特性図である。 主な図番の説明、１はコレクタ領域、２はベース領域、
３は網状エミッタ領域、４はベース電極、５はエミッタ
電極、６はコンタクト孔である。Figure 1 is a top view to explain a mesh emitter structure transistor, Figure 2 is a top view to explain part of the transistor of the present invention, and Figure 3 is a characteristic diagram to explain the operating principle of the present invention. be. Explanation of the main drawing numbers, 1 is the collector area, 2 is the base area,
3 is a net-like emitter region, 4 is a base electrode, 5 is an emitter electrode, and 6 is a contact hole.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] コレクタ領域ベース領域および、鋼状エミッタ領域と該
エミッタ領域に囲まれた多数の島状のベース領域にオー
ミック接触する櫛歯状ベース電極と前記エミッタ領域に
オーミック接触する櫛歯状エミッタ電極とを具備するト
ランジスタに於いて、前記エミッタ電極のコンタクト孔
をポンディングパッドに接近するに従い小さくすること
を特徴とするトランジスタ。A collector region base region, a comb-shaped base electrode in ohmic contact with a steel-like emitter region and a number of island-shaped base regions surrounded by the emitter region, and a comb-shaped emitter electrode in ohmic contact with the emitter region. A transistor characterized in that the contact hole of the emitter electrode becomes smaller as it approaches a bonding pad.
JP12979881U 1981-08-31 1981-08-31 transistor Pending JPS5834751U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12979881U JPS5834751U (en) 1981-08-31 1981-08-31 transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12979881U JPS5834751U (en) 1981-08-31 1981-08-31 transistor

Publications (1)

Publication Number Publication Date
JPS5834751U true JPS5834751U (en) 1983-03-07

Family

ID=29923460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12979881U Pending JPS5834751U (en) 1981-08-31 1981-08-31 transistor

Country Status (1)

Country Link
JP (1) JPS5834751U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02132838A (en) * 1989-07-10 1990-05-22 Sanken Electric Co Ltd Multicell type transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5043885A (en) * 1973-08-20 1975-04-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5043885A (en) * 1973-08-20 1975-04-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02132838A (en) * 1989-07-10 1990-05-22 Sanken Electric Co Ltd Multicell type transistor

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