JPS5828840A - Removing projections on wafer surface - Google Patents
Removing projections on wafer surfaceInfo
- Publication number
- JPS5828840A JPS5828840A JP12704981A JP12704981A JPS5828840A JP S5828840 A JPS5828840 A JP S5828840A JP 12704981 A JP12704981 A JP 12704981A JP 12704981 A JP12704981 A JP 12704981A JP S5828840 A JPS5828840 A JP S5828840A
- Authority
- JP
- Japan
- Prior art keywords
- photo resist
- wafer
- projection
- supporting means
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003486 chemical etching Methods 0.000 claims abstract 4
- 239000000126 substance Substances 0.000 claims abstract 3
- 238000000034 method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 3
- 206010011732 Cyst Diseases 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はエピタキシャル成長工程で生じるウェハ上の突
起物を除去する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for removing protrusions on a wafer that occur during an epitaxial growth process.
従来、この柚の方法は、突起物の生じたウェハ面とその
裏面とを平行な２枚の平面枚で圧縮して突起物の高さを
減じるものであ秒、破壊さ７′］た突起物の破片により
ウェハ表面が損傷され、旧つ突起物が完全に除去されな
いという欠点がある。Conventionally, this method involves compressing the wafer surface where protrusions have occurred and its back surface with two parallel flat plates to reduce the height of the protrusions. The disadvantage is that the wafer surface is damaged by debris and old protrusions are not completely removed.
本発明の目的は、表面を傷つけることなく完全に突起物
をＪｒＳ７り除く方法を提供することにある。An object of the present invention is to provide a method for completely removing protrusions from JrS7 without damaging the surface.
本発明による方法は、ウェハと比較して著しく食刻速度
の遅い物質でウェハ上を覆い、突起物上の食刻速度の遅
い物質を機種的に除去し、そして化学食刻により突起物
のみを選゛択的に食刻することにより突起物を除去する
ととを特徴とする。The method according to the present invention covers the wafer with a material whose etching speed is significantly slower than that of the wafer, selectively removes the material whose etching speed is slow on the protrusions, and then chemically etches only the protrusions. The protrusion is removed by selective etching.
従って、本発明の方法によねば、ウェハ表面を損傷せず
にウェハ」二の突起物を除去し、露光時のマスクの損傷
を防止できる利点がある。Therefore, the method of the present invention has the advantage that the protrusions on the wafer can be removed without damaging the wafer surface, and damage to the mask during exposure can be prevented.
次に図面を用いて本発明の実施例について詳細に説明す
る。Next, embodiments of the present invention will be described in detail using the drawings.
第１図は本発明の−実り例を示す状態図である。FIG. 1 is a state diagram illustrating a practical example of the present invention.
すなわち、基板１上にエピタキシャル成長によシ成長層
２を形成し、酸化により形成された酸化膜３を有するウ
ェハ１０を支持台６の上にのせる。That is, a growth layer 2 is formed on a substrate 1 by epitaxial growth, and a wafer 10 having an oxide film 3 formed by oxidation is placed on a support 6.
支持台６には空孔７があって真空ポンプへ接続されてお
り、真空ポンプを駆動させることによシ支持台６とウェ
ハ１０とを密着させる。支持台６を回転させる駆動電動
機が支持台６に接続されておリ、支持台６を回転させる
。次に、ノズル８からフォトレジストを落下させてフォ
トレジストを被接する。次に、ノズル８からのフォトレ
ジストの落下を止め、支持台６の回転を止め、ノズル８
を支持台６と平行板９との間に位置しないように移動さ
せ、支持台６と平行な平行板９を］−けてウェハ１０を
圧着する。これに」：す、突起物５の一部を破壊して突
起物上の削″化膜３を破壊１〜、貞空ポンプを停止し基
板をとり上げ化学食刻する。The support base 6 has a hole 7 and is connected to a vacuum pump, and by driving the vacuum pump, the support base 6 and the wafer 10 are brought into close contact with each other. A drive motor that rotates the support base 6 is connected to the support base 6 and rotates the support base 6. Next, the photoresist is dropped from the nozzle 8 to be in contact with the photoresist. Next, the fall of the photoresist from the nozzle 8 is stopped, the rotation of the support base 6 is stopped, and the nozzle 8 is
The wafer 10 is moved so that it is not located between the support stand 6 and the parallel plate 9, and the wafer 10 is crimped using the parallel plate 9 which is parallel to the support stand 6. To do this: Destroy a part of the protrusion 5 and destroy the abraded film 3 on the protrusion 1~ Stop the air pump, pick up the substrate, and chemically etch it.
このような構造になっているから、支持台６の回転数，
フォトレジストの落下流量及びフ４−１・１／シストの
活性度を制御することにより、第１図に示すように、突
起物５上のフＡ． ｌ−レジスト−量′を少なくシ、酸
化膜３の破壊を賓易にするととができる。従って、ウェ
ハ１０の突）ｌ’＋−！物１５だりを選択的に化学食刻
できる。With this structure, the rotation speed of the support base 6,
By controlling the falling flow rate of the photoresist and the activity level of the film 4-1.1/cyst, as shown in FIG. By reducing the amount of l-resist, the oxide film 3 can be easily destroyed. Therefore, the protrusion of the wafer 10)l'+-! 15 items can be selectively chemically etched.
以上陵、明したように、ウェハ表面を４１４傷すること
なくウェハ上の突起物を除去できるから、露光時のマス
ク損傷を防止し、マスクの使用回数を増大することがで
きる利点がある。As explained above, since protrusions on the wafer can be removed without damaging the wafer surface, there is an advantage that damage to the mask during exposure can be prevented and the number of times the mask can be used can be increased.
尚、」−記実ｈｉｌｉ例において、フォトレジスト４は
、酸化膜３の膜厚のバラツキのために平面板９によす生
じるエピタキシャル層２の表面の損傷を防止するために
設けもので、従って必ずしも必要ない。In the example, the photoresist 4 is provided to prevent the surface of the epitaxial layer 2 from being damaged on the flat plate 9 due to variations in the thickness of the oxide film 3. Not necessarily necessary.
第１図し１，本発明の一実施例を示す状態断面図である
。なお、図において、１はウエノ・−ス、２はエピタキ
シャル成長層、３は酸化膜、４はフォトレジスト、５は
突起物、６は支持台、７は空孔、８し１ノズル、９は平
面板である。FIG. 1 is a sectional view showing an embodiment of the present invention. In the figure, 1 is a wax, 2 is an epitaxial growth layer, 3 is an oxide film, 4 is a photoresist, 5 is a protrusion, 6 is a support, 7 is a hole, 8 is a nozzle, and 9 is a flat surface. It is a face plate.
Claims (1)
して著しく化学食刻速度の遅い物質で咎い、上記突起物
上の上記物質を機械的に除去し７、しかる後に化学食刻
により突起物を除去することを特徴とするウェハ上の突
起物の除去方法。A material having protrusions on its surface is treated with a substance having a significantly lower chemical etching rate than the material, the material on the protrusions is mechanically removed, and then chemical etching is performed. A method for removing protrusions on a wafer, the method comprising removing protrusions by using a method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12704981A JPS5828840A (en) | 1981-08-13 | 1981-08-13 | Removing projections on wafer surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12704981A JPS5828840A (en) | 1981-08-13 | 1981-08-13 | Removing projections on wafer surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5828840A true JPS5828840A (en) | 1983-02-19 |
Family
ID=14950336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12704981A Pending JPS5828840A (en) | 1981-08-13 | 1981-08-13 | Removing projections on wafer surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5828840A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0497495U (en) * | 1985-01-15 | 1992-08-24 | ||
| JP2000077342A (en) * | 1998-08-27 | 2000-03-14 | Wacker Siltronic G Fuer Halbleitermaterialien Ag | Method and apparatus for manufacturing epitaxially grown semiconductor wafer having protective layer |
-
1981
- 1981-08-13 JP JP12704981A patent/JPS5828840A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0497495U (en) * | 1985-01-15 | 1992-08-24 | ||
| JP2000077342A (en) * | 1998-08-27 | 2000-03-14 | Wacker Siltronic G Fuer Halbleitermaterialien Ag | Method and apparatus for manufacturing epitaxially grown semiconductor wafer having protective layer |
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