JPS5825287A - Semiconductive photo sensitive light emitting device - Google Patents
Semiconductive photo sensitive light emitting deviceInfo
- Publication number
- JPS5825287A JPS5825287A JP57120879A JP12087982A JPS5825287A JP S5825287 A JPS5825287 A JP S5825287A JP 57120879 A JP57120879 A JP 57120879A JP 12087982 A JP12087982 A JP 12087982A JP S5825287 A JPS5825287 A JP S5825287A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- light emitting
- emitting device
- semiconductor
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は光が照射されること、によシ発光が制御され
る半導体発光素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor light emitting device whose light emission is controlled by being irradiated with light.
従来の半導体発光素子は、−第１図に示すようにｐ−ｎ
接合（１Ｃ）を形成するｐ形半導体層（１人）、および
ｎ形半導体層（ＩＢ）％さらに上記ｐ形半導体層の表面
に形成され九アノード電極（１Ｄ）、および上記り形半
導体層の表面に形成されたカソード電極（１Ｅ）を有す
る半導体発光素子チップ１が基板２上に固定され、その
まわシを透明樹脂３などによシ被覆して上記半導体発光
素子チップから放射された光を外部に取ｐ出すようにな
されている。このように構成された半導体発光素子にお
いては、固体ランプとして高輝度、高信頼性、および低
消費電力などの優れた特性を有し、従来の白熱ランプに
代わるものとして注目されている。しかしながら、ｐ−
ｔｔ接合を有する半導体発光素子は単なる表示ランプと
して用いられるには余シにその潜在能力が生かされてい
ない。１九この半導体発光素子は白熱ランプと比較して
著しく高価である面もある。The conventional semiconductor light emitting device is - p-n as shown in FIG.
A p-type semiconductor layer (1 person) forming a junction (1C), and an n-type semiconductor layer (IB)% further forming an anode electrode (1D) on the surface of the above-mentioned p-type semiconductor layer; A semiconductor light-emitting element chip 1 having a cathode electrode (1E) formed on its surface is fixed on a substrate 2, and its cover is coated with a transparent resin 3 or the like so that light emitted from the semiconductor light-emitting element chip 1 is fixed on a substrate 2. It is designed to be taken out to the outside. The semiconductor light emitting device configured in this manner has excellent characteristics as a solid-state lamp, such as high brightness, high reliability, and low power consumption, and is attracting attention as an alternative to conventional incandescent lamps. However, p-
Semiconductor light emitting devices having a tt junction cannot be used simply as display lamps, and their potential is not fully utilized. 19 This semiconductor light emitting device is also significantly more expensive than an incandescent lamp.
この発明は、かかる点に着目してなされたもので、半導
体フォトサイリスタチップと、半導体発光素子チップと
を用いるとともに１さらにこれらの組立技術の容易性に
着目し、単一のパッケージ内に、上記半導体フォトサイ
リスタチップと、上記半導体発光素子チップとを電気的
に直列接続させて一体に収納させることによｐ周ＩＮＯ
党等によシ光学的に発光が制御される表示素子を提供し
ようとするものである。The present invention has been made with attention to this point, and uses a semiconductor photothyristor chip and a semiconductor light emitting element chip, and also focuses on the ease of assembly technology for these chips, and incorporates the above-mentioned components into a single package. By electrically connecting the semiconductor photothyristor chip and the semiconductor light emitting element chip in series and housing them together, p-period INO
The present invention is intended to provide a display element whose light emission is optically controlled.
次にこの発明の実施例を第２図について説明する。Next, an embodiment of the invention will be described with reference to FIG.
すなわち、アノード基板５上に７オトサイリスタチツプ
のアノード電極（６エ）を接着するとともに、上記フォ
トサイリスタチップのカソード電極（６Ｈ）上に直接発
光素子チップのアノード電極（１Ｄ）を接着させたあと
、さらに上記発光素子チップのカソード電極（１Ｅ）と
、カソード基板２とを金線４等によって電気的に接続さ
せることにより半導体感光発光素子２３を形成するよう
にしたものである。That is, after adhering the anode electrode (6D) of the 7 Otothyristor chip onto the anode substrate 5, and adhering the anode electrode (1D) of the light emitting element chip directly onto the cathode electrode (6H) of the photothyristor chip. Further, the semiconductor photosensitive light emitting device 23 is formed by electrically connecting the cathode electrode (1E) of the light emitting device chip and the cathode substrate 2 with gold wire 4 or the like.
本発明の半導体感光発光素子は、フォトサイリスタチッ
プ上の発光素子チップがフィルタの働惠をするという点
に特徴がある。この場合、適当な電極構造にすることに
よシ外部からの照射光が、まず発光素子チップに入射す
る。この光は上記半導体素子チップのバルク内部におい
て上記バルク特有の吸収を受けた後、フォトサイリスタ
チップに入射する。このように、半導体発光素子のバル
ク内部を透過した光のみが７オトナイリスタを制御する
わけである。The semiconductor photosensitive light emitting device of the present invention is characterized in that the light emitting device chip on the photothyristor chip functions as a filter. In this case, by providing a suitable electrode structure, irradiated light from the outside first enters the light emitting element chip. This light is absorbed inside the bulk of the semiconductor element chip, which is unique to the bulk, and then enters the photothyristor chip. In this way, only the light that has passed through the bulk of the semiconductor light emitting device controls the 7 adult resistor.
次に、上述した一実施例の動作を次０ｒａｂ説明する。Next, the operation of the above-mentioned embodiment will be explained below.
まず、第６図に示す′ように、半導体感光発光素子２２
に負荷抵抗１６が直列に接続された回路に１電源１５か
ら電圧ηが印加されているとすると、フォトサイリスタ
チップ６の真中のｎ−ｐ接合（６Ｆ）（第２図）が逆バ
イアスとなっており、この間のインビーダンスは、他の
部分に比して非常に大きいため、電源電圧１はほぼ上記
ｎ−ｐＨ合に印加されていると考えられる。次に１第４
１ＱＫ示すように、サイリスタチップに照射される党の
照度が鳥の場合、上記サイリスタのブレークオーバ電圧
は、電源電圧１よシ高く、フォトサイリス−はｒ ＯＦ
Ｆ Ｊ状態にあるため、この回路には電流が流れず、発
光素子チップ１は発光しない。次に、フォトサイリスタ
チップ６に照射される光の照度がＥ！に達したとき、上
記フォトサイリス−チップのブレークオーバ電圧は、電
源電圧１に等しくなるため、この時の７オトサイリスタ
は「ＯＮ」状態となり第６図に示す回路に、負荷抵抗１
６にょシ制限された電流が流れ、発光素子チップ１が発
光する。まだ、フォトサイリスタチップに照射される光
の照度がＥ、以上であれば、ブレークオーバ電圧は電源
電圧ｖｏよりも低く、発光素子チップ１が発光する。First, as shown in FIG.
Assuming that a voltage η is applied from a power source 15 to a circuit in which a load resistor 16 is connected in series to Since the impedance during this period is very large compared to other parts, it is considered that the power supply voltage 1 is applied approximately at the above n-pH range. Next 1st 4th
As shown in 1QK, when the illuminance irradiated to the thyristor chip is a bird's-eye, the breakover voltage of the thyristor is higher than the power supply voltage 1, and the photo thyristor is rOF.
Since it is in the FJ state, no current flows through this circuit, and the light emitting element chip 1 does not emit light. Next, the illuminance of the light irradiated to the photothyristor chip 6 is E! When the breakover voltage of the photothyristor chip reaches 1, the breakover voltage of the photothyristor chip becomes equal to the power supply voltage 1. At this time, the 7 otothyristors are in the "ON" state, and a load resistor 1 is added to the circuit shown in FIG.
A limited current flows, and the light emitting element chip 1 emits light. If the illuminance of the light irradiated to the photothyristor chip is still above E, the breakover voltage is lower than the power supply voltage vo, and the light emitting element chip 1 emits light.
以上述べたように、半導体感光発光素子は、照射される
光の照度によりその「ＯＮ」状態、「ＯＦＦ」状態が制
御されるため、上記半導体感光発光素子を構成する発光
素子チップが可視光を発する場合には上記「ＯＮ」状態
、「ＯＦＦ」状態が肉眼によって観察できるばかりでな
く上記発光素子チップが近赤外光等を発する場合には適
当な受光素子により上記「ＯＮ」状態、「ＯＦＦ」状態
が検知されるわけである。また、上記電源１５が直流の
場合には、一旦「ＯＮ」状態にｋつだ感光発光素子２２
は、照度がＥ、以下に低下しても、そのまｔｒＯＮＪ状
態を記憶する。また、上記電源１５が交流あるいは電圧
が零または負となる一期訓を有するパルスの場合には、
感光発光素子が「ＯＮ」状態であっても、照度がＥ、以
下に低下すれば、ｒＯＦＦＪ状態となり発光は停止する
。したがって用途に応じて適当な電源を持ちいれば感光
発光素子２２の機能を有効に利用することがで詣ること
はいうまでもない。As mentioned above, the "ON" and "OFF" states of the semiconductor photosensitive light emitting device are controlled by the illuminance of the irradiated light, so the light emitting element chip that constitutes the semiconductor photosensitive light emitting device emits visible light. When emitting light, the "ON" state and "OFF" state can not only be observed with the naked eye, but also when the light emitting element chip emits near-infrared light, the "ON" state and "OFF" state can be detected by an appropriate light receiving element. ” condition is detected. In addition, when the power source 15 is DC, the k photosensitive light emitting elements 22 are once turned on.
stores the trONJ state even if the illuminance drops below E. In addition, when the power source 15 is an alternating current or a pulse having a voltage of zero or negative,
Even if the photosensitive light emitting element is in the "ON" state, if the illuminance decreases below E, it enters the rOFFJ state and stops emitting light. Therefore, it goes without saying that the functions of the photosensitive light emitting device 22 can be effectively utilized if a suitable power source is provided depending on the application.
以上述べた各実施例のように、この発明によれば単一の
パッケージ内において、フォトサイリスタチップと、半
導体発光素子チップ等を電気的に直列接続させることに
より、従来の単なるランプとしての機能に加えて周囲光
等圧より光学的に発光が制御されるという新らしい機能
を有する半導体感光素子が得られるわけである。As in the embodiments described above, according to the present invention, a photothyristor chip, a semiconductor light emitting element chip, etc. are electrically connected in series within a single package. In addition, it is possible to obtain a semiconductor photosensitive element having a novel function in which light emission is optically controlled based on the constant pressure of ambient light.
以上はこの発明による半導体感光素子の有用性について
説明したが、次にこの発明のさらにもう１つの重要な効
果について説明する。The usefulness of the semiconductor photosensitive element according to the present invention has been explained above, and next, another important effect of the present invention will be explained.
すなわち、この発明の他の特徴とすることは、受光し九
光の波長と、異なる波長の光を放射することのできる光
波長変換器の機能を有することである。すなわち、半導
体感光発光素子を構成するフォトサイリス−チップと、
発光素子チップとを互いに異なる材料、たとえば、フオ
トナイリスタチップとしてシリコン、そして発光素子と
して杜、会素ドープされたガリウムリンを用いると、波
長が８０００１の光が上記フォトサイリスタチップ上に
、「ＯＮ」状態となるに必要な照度で入射し九時、上記
発光素子が導通して５７００ＸＯ党を放射する。That is, another feature of the present invention is that it has the function of an optical wavelength converter that can receive light of nine wavelengths and emit light of different wavelengths. That is, a photothyris chip that constitutes a semiconductor photosensitive light emitting device,
When the light-emitting device chip and the photothyristor chip are made of different materials, for example, silicon is used as the photothyristor chip, and gallium phosphide doped with silicon is used as the light-emitting device, light with a wavelength of 800011 is applied to the photothyristor chip as an “ON”. At 9 o'clock, the light emitting element becomes conductive and emits 5700XO.
このように、この半導体感光発光素子によ、６ ａｏｏ
。In this way, this semiconductor photosensitive light emitting device produces 6 aoo
.
又の波長の入射光が５７００ＸＯ波長の出力光に賓換さ
れたわけである。この何社、シリ−７とガリウムリンを
用いる場合について説明したが、光Ｏ波長変換は、フォ
トサイリスタチップおよび発光素子チップに任意の半導
体材料を選択することによって可能である。この半導体
感光発光素子の光波長変換器の機能を図式的に示せば第
５図のように、所定の波長の入射光ムがこの半導体感光
発光素子２６によシ他の所定の波長の出力光１となるわ
けである。このような光変換器の機能は、非常に大！１
表発展が期待されるオプトエレクト四エクス、特に光回
路関係において重畳な役割を果すと゛考えられるも、の
である。This means that the incident light of another wavelength is converted into output light of 5700XO wavelength. Although the case of using Sili-7 and gallium phosphide has been described, optical O wavelength conversion is possible by selecting any semiconductor material for the photothyristor chip and the light emitting element chip. To schematically show the function of the optical wavelength converter of this semiconductor photosensitive light emitting device, as shown in FIG. Therefore, it becomes 1. The functions of such an optical converter are extremely large! 1
It is believed that the opto-electronic technology, which is expected to develop rapidly, will play an overlapping role, especially in optical circuits.
なお、上述した各実施例は、ＮＰＮＰＩ１７オトサイリ
スタを用いた場合について説明したが、ＰＮＰＮ型フォ
トサイリスタ、あるいはＰＮＰおよびＮＰＮフォトトラ
ンジスタ、もしくはＰＩＮ構造の負性抵抗特性を有する
フォトダイオードを用いても同様な効果が得られること
はいうまでもない。Although each of the above-mentioned embodiments has been described using an NPNPI17 otothyristor, the same effect can be obtained using a PNPN type photothyristor, a PNP and NPN phototransistor, or a photodiode having a negative resistance characteristic of a PIN structure. Needless to say, a great effect can be obtained.
第１固状従来の半導体発光素子を示す断面図、第２図は
この発明の一実施例を示す断面図、第３図はこの発明の
素子を用いる回路図、第４図はその使用特性図、第５図
は、この発明を光波長変換器として用いた場合の模式図
である。
図面中、１は半導体発光素子、３はエポキシ樹脂等から
なるパッケージ、６はフォトサイリスタチップ等の光電
素子である。なお、図中同一符号はそれぞれ同一または
和尚部分を示す。
代理人 葛野信−
第１図
第２図
第３図
第４図
照度（＆）０Ｖ）□1. A cross-sectional view showing a conventional solid state semiconductor light emitting device, FIG. 2 a sectional view showing an embodiment of the present invention, FIG. 3 a circuit diagram using the device of the present invention, and FIG. 4 a diagram of its usage characteristics. , FIG. 5 is a schematic diagram when the present invention is used as an optical wavelength converter. In the drawing, 1 is a semiconductor light emitting device, 3 is a package made of epoxy resin, etc., and 6 is a photoelectric device such as a photothyristor chip. Note that the same reference numerals in the figures indicate the same or similar parts. Agent Makoto Kuzuno - Figure 1 Figure 2 Figure 3 Figure 4 Illuminance (&) 0V)□
Claims (1)
、前記半導体光電子を構成する半導体材料より禁制帯エ
ネルギーの大きな半導体材料よシなる半導体発光素子と
を互いに電気的に直列になる如ぐ周定せしめたことを特
徴とする半導体感光発光素子。A semiconductor photoelectric element that switches at a predetermined illuminance and a semiconductor light emitting element made of a semiconductor material having a larger forbidden band energy than the semiconductor material constituting the semiconductor photoelectron are arranged so as to be electrically connected to each other in series. Characteristic semiconductor photosensitive light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57120879A JPS606112B2 (en) | 1982-07-12 | 1982-07-12 | Semiconductor photosensitive light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57120879A JPS606112B2 (en) | 1982-07-12 | 1982-07-12 | Semiconductor photosensitive light emitting device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14703275A Division JPS5271184A (en) | 1975-12-10 | 1975-12-10 | Semiconductor photosensitive light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5825287A true JPS5825287A (en) | 1983-02-15 |
| JPS606112B2 JPS606112B2 (en) | 1985-02-15 |
Family
ID=14797221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57120879A Expired JPS606112B2 (en) | 1982-07-12 | 1982-07-12 | Semiconductor photosensitive light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS606112B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6441155U (en) * | 1987-09-07 | 1989-03-13 | ||
| JP2001308385A (en) * | 2000-04-24 | 2001-11-02 | Nippon Sheet Glass Co Ltd | Self-scanning light-emitting device |
| JP2001308375A (en) * | 2000-04-24 | 2001-11-02 | Nippon Sheet Glass Co Ltd | Light-emitting element and light-emitting element array |
-
1982
- 1982-07-12 JP JP57120879A patent/JPS606112B2/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6441155U (en) * | 1987-09-07 | 1989-03-13 | ||
| JP2001308385A (en) * | 2000-04-24 | 2001-11-02 | Nippon Sheet Glass Co Ltd | Self-scanning light-emitting device |
| JP2001308375A (en) * | 2000-04-24 | 2001-11-02 | Nippon Sheet Glass Co Ltd | Light-emitting element and light-emitting element array |
| JP4649701B2 (en) * | 2000-04-24 | 2011-03-16 | 富士ゼロックス株式会社 | Self-scanning light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS606112B2 (en) | 1985-02-15 |
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