JPS5825280A - 光電変換用受光面 - Google Patents

光電変換用受光面

Info

Publication number
JPS5825280A
JPS5825280A JP57124449A JP12444982A JPS5825280A JP S5825280 A JPS5825280 A JP S5825280A JP 57124449 A JP57124449 A JP 57124449A JP 12444982 A JP12444982 A JP 12444982A JP S5825280 A JPS5825280 A JP S5825280A
Authority
JP
Japan
Prior art keywords
amorphous
film
silicon
light
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57124449A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0224031B2 (enrdf_load_stackoverflow
Inventor
Juichi Shimada
嶋田　寿一
Yoshifumi Katayama
片山　良史
Kiichi Komatsubara
小松原　毅一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57124449A priority Critical patent/JPS5825280A/ja
Publication of JPS5825280A publication Critical patent/JPS5825280A/ja
Publication of JPH0224031B2 publication Critical patent/JPH0224031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Light Receiving Elements (AREA)
JP57124449A 1982-07-19 1982-07-19 光電変換用受光面 Granted JPS5825280A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57124449A JPS5825280A (ja) 1982-07-19 1982-07-19 光電変換用受光面

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57124449A JPS5825280A (ja) 1982-07-19 1982-07-19 光電変換用受光面

Publications (2)

Publication Number Publication Date
JPS5825280A true JPS5825280A (ja) 1983-02-15
JPH0224031B2 JPH0224031B2 (enrdf_load_stackoverflow) 1990-05-28

Family

ID=14885789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57124449A Granted JPS5825280A (ja) 1982-07-19 1982-07-19 光電変換用受光面

Country Status (1)

Country Link
JP (1) JPS5825280A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04131362U (ja) * 1991-02-02 1992-12-02 卓二 小林 鏡のくもり止め装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1978 *
JAPANESE JOURNAL OF APPLIED PHYSICS=1977 *
PHILSASPHICAL MAGUZINE=1977 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate

Also Published As

Publication number Publication date
JPH0224031B2 (enrdf_load_stackoverflow) 1990-05-28

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