JPS5823421U - semiconductor sine wave modulator - Google Patents

semiconductor sine wave modulator

Info

Publication number
JPS5823421U
JPS5823421U JP11693881U JP11693881U JPS5823421U JP S5823421 U JPS5823421 U JP S5823421U JP 11693881 U JP11693881 U JP 11693881U JP 11693881 U JP11693881 U JP 11693881U JP S5823421 U JPS5823421 U JP S5823421U
Authority
JP
Japan
Prior art keywords
voltage
high frequency
section
output
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11693881U
Other languages
Japanese (ja)
Inventor
俊夫 多田
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP11693881U priority Critical patent/JPS5823421U/en
Publication of JPS5823421U publication Critical patent/JPS5823421U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 高周波信号を制御電圧により制御して出力レベルを可変
するＰＩＮダイオードを有する高周波制御部と、この高
周波制御部の高周波出力を検波する電力検出部と、所定
変調周波数の発振出力と可変直流電圧とを重畳した基準
信号電圧を形成する基準信号部と、この基準信号部の出
力電圧と前記電力検出部の検波電圧とを差動増幅して前
記制御電圧を形成し前記高周波制御部に供給する増幅部
とを含み、前記直流電圧を可変する三とにより前記高周
波信号レベルを制御することを特徴とする半導体正弦波
変調器。A high frequency control section having a PIN diode that controls a high frequency signal with a control voltage to vary the output level, a power detection section that detects the high frequency output of this high frequency control section, and an oscillation output of a predetermined modulation frequency and a variable DC voltage. a reference signal section that forms a superimposed reference signal voltage; and an amplification section that differentially amplifies the output voltage of the reference signal section and the detected voltage of the power detection section to form the control voltage and supply it to the high frequency control section. 3. A semiconductor sine wave modulator, comprising: (3) varying the DC voltage; and (3) controlling the high frequency signal level.
JP11693881U 1981-08-05 1981-08-05 semiconductor sine wave modulator Pending JPS5823421U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11693881U JPS5823421U (en) 1981-08-05 1981-08-05 semiconductor sine wave modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11693881U JPS5823421U (en) 1981-08-05 1981-08-05 semiconductor sine wave modulator

Publications (1)

Publication Number Publication Date
JPS5823421U true JPS5823421U (en) 1983-02-14

Family

ID=29911146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11693881U Pending JPS5823421U (en) 1981-08-05 1981-08-05 semiconductor sine wave modulator

Country Status (1)

Country Link
JP (1) JPS5823421U (en)

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