JPS582288A - 非単結晶層の単結晶化方法 - Google Patents

非単結晶層の単結晶化方法

Info

Publication number
JPS582288A
JPS582288A JP10110481A JP10110481A JPS582288A JP S582288 A JPS582288 A JP S582288A JP 10110481 A JP10110481 A JP 10110481A JP 10110481 A JP10110481 A JP 10110481A JP S582288 A JPS582288 A JP S582288A
Authority
JP
Japan
Prior art keywords
region
crystal layer
layer
single crystal
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10110481A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0137356B2 (enExample
Inventor
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10110481A priority Critical patent/JPS582288A/ja
Publication of JPS582288A publication Critical patent/JPS582288A/ja
Publication of JPH0137356B2 publication Critical patent/JPH0137356B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP10110481A 1981-06-29 1981-06-29 非単結晶層の単結晶化方法 Granted JPS582288A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10110481A JPS582288A (ja) 1981-06-29 1981-06-29 非単結晶層の単結晶化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10110481A JPS582288A (ja) 1981-06-29 1981-06-29 非単結晶層の単結晶化方法

Publications (2)

Publication Number Publication Date
JPS582288A true JPS582288A (ja) 1983-01-07
JPH0137356B2 JPH0137356B2 (enExample) 1989-08-07

Family

ID=14291766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10110481A Granted JPS582288A (ja) 1981-06-29 1981-06-29 非単結晶層の単結晶化方法

Country Status (1)

Country Link
JP (1) JPS582288A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046019A (ja) * 1983-08-24 1985-03-12 Matsushita Electric Ind Co Ltd 単結晶シリコン薄膜をそなえた非晶質基板およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046019A (ja) * 1983-08-24 1985-03-12 Matsushita Electric Ind Co Ltd 単結晶シリコン薄膜をそなえた非晶質基板およびその製造方法

Also Published As

Publication number Publication date
JPH0137356B2 (enExample) 1989-08-07

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