JPS58215794A - Non-volatile memory device - Google Patents

Non-volatile memory device

Info

Publication number
JPS58215794A
JPS58215794A JP9830782A JP9830782A JPS58215794A JP S58215794 A JPS58215794 A JP S58215794A JP 9830782 A JP9830782 A JP 9830782A JP 9830782 A JP9830782 A JP 9830782A JP S58215794 A JPS58215794 A JP S58215794A
Authority
JP
Japan
Prior art keywords
times
number
block
write
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9830782A
Other versions
JPH0552000B2 (en
Inventor
Noriyuki Tanaka
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP9830782A priority Critical patent/JPH0552000B2/ja
Publication of JPS58215794A publication Critical patent/JPS58215794A/en
Publication of JPH0552000B2 publication Critical patent/JPH0552000B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles

Abstract

PURPOSE:To decrease the number of times of replacement of a memory and to improve the reliability, by splitting a non-volatile memory having a storage capacity of plural times of that of a system to each block and providing an exclusive location of the number of times of write for each unit block. CONSTITUTION:A storage area of an EEPROM having a capacity >=2 times the capacity requested to the system is splitted to blocks 1 and 2, and the direction of split is taken in the direction of word arrangement. Exclusive locations 3, 4 to store the number of times of program write to the corresponding memory are allocated to the blocks 1, 2 respectively, and the number of bits of each location corresponds to the limit value of the number of times of program write of the corresponding memory. When the number of times of program write of the block 1 reaches a specified value, the block is used switchingly. Whether or not the number of times of write reaches the specified value is discriminated with a count value stored to the locations 3, 4.
JP9830782A 1982-06-08 1982-06-08 Expired - Lifetime JPH0552000B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9830782A JPH0552000B2 (en) 1982-06-08 1982-06-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9830782A JPH0552000B2 (en) 1982-06-08 1982-06-08

Publications (2)

Publication Number Publication Date
JPS58215794A true JPS58215794A (en) 1983-12-15
JPH0552000B2 JPH0552000B2 (en) 1993-08-04

Family

ID=14216264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9830782A Expired - Lifetime JPH0552000B2 (en) 1982-06-08 1982-06-08

Country Status (1)

Country Link
JP (1) JPH0552000B2 (en)

Cited By (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60230250A (en) * 1984-04-27 1985-11-15 Meidensha Electric Mfg Co Ltd Data processing system of nonvolatile memory
JPS61265869A (en) * 1985-05-14 1986-11-25 Zaikoole Inc Electrically alterable non-volatile memory
JPS62135984A (en) * 1985-12-09 1987-06-18 Matsushita Electric Ind Co Ltd Ic card
JPS62136880A (en) * 1985-12-11 1987-06-19 Fujitsu Ltd Semiconductor memory device and manufacture of the same
JPS62283496A (en) * 1986-05-31 1987-12-09 Canon Inc Management system for of number of times of writing programmable read only memory
JPS62283497A (en) * 1986-05-31 1987-12-09 Canon Inc Management system for of number of times of writing programmable read only memory
JPS6324796U (en) * 1986-07-30 1988-02-18
JPS63181190A (en) * 1987-01-23 1988-07-26 Nippon Telegr & Teleph Corp <Ntt> Information storage method
JPS63234500A (en) * 1987-03-20 1988-09-29 Omron Tateisi Electronics Co Data protection system
EP0285067A1 (en) * 1987-03-31 1988-10-05 Alcatel Satmam Non-volatile memory with a limited writing rate and its use in postage meters
JPS63292496A (en) * 1987-05-25 1988-11-29 Seiko Instr & Electronics Ltd Semiconductor nonvolatile memory device
JPH03181716A (en) * 1989-12-08 1991-08-07 Sanyo Electric Co Ltd Electronically controlled apparatus
EP0455238A2 (en) * 1990-05-02 1991-11-06 DeTeMobil Deutsche Telekom MobilNet GmbH Method for increasing the utilisation period of information carriers with EEPROM
EP0544252A2 (en) * 1991-11-28 1993-06-02 Fujitsu Limited Data management system for programming-limited type semiconductor memory and IC memory card having the data management system
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
JPH06302194A (en) * 1993-01-20 1994-10-28 Canon Inc Information processor
JPH06338195A (en) * 1993-05-31 1994-12-06 Nec Corp Device for managing number of writing times of electrically erasable nonvolatile memory
FR2712412A1 (en) * 1993-11-12 1995-05-19 Peugeot Safeguarding data in EEPROM microprocessor circuit in motor vehicle
US5544356A (en) * 1990-12-31 1996-08-06 Intel Corporation Block-erasable non-volatile semiconductor memory which tracks and stores the total number of write/erase cycles for each block
US5544119A (en) * 1992-10-30 1996-08-06 Intel Corporation Method for assuring that an erase process for a memory array has been properly completed
US5559956A (en) * 1992-01-10 1996-09-24 Kabushiki Kaisha Toshiba Storage system with a flash memory module
US5602987A (en) * 1989-04-13 1997-02-11 Sandisk Corporation Flash EEprom system
US5630093A (en) * 1990-12-31 1997-05-13 Intel Corporation Disk emulation for a non-volatile semiconductor memory utilizing a mapping table
US5765175A (en) * 1994-08-26 1998-06-09 Intel Corporation System and method for removing deleted entries in file systems based on write-once or erase-slowly media
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5930815A (en) * 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
US5928370A (en) * 1997-02-05 1999-07-27 Lexar Media, Inc. Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
US5963480A (en) * 1988-06-08 1999-10-05 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6076137A (en) * 1997-12-11 2000-06-13 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6081878A (en) * 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6081447A (en) * 1991-09-13 2000-06-27 Western Digital Corporation Wear leveling techniques for flash EEPROM systems
US6115785A (en) * 1995-07-31 2000-09-05 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US6122195A (en) * 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
US6125435A (en) * 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
US6141249A (en) * 1999-04-01 2000-10-31 Lexar Media, Inc. Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
US6262918B1 (en) 1999-04-01 2001-07-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6374337B1 (en) 1998-11-17 2002-04-16 Lexar Media, Inc. Data pipelining method and apparatus for memory control circuit
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
US6462992B2 (en) 1989-04-13 2002-10-08 Sandisk Corporation Flash EEprom system
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6813678B1 (en) 1998-01-22 2004-11-02 Lexar Media, Inc. Flash memory system
US6898662B2 (en) 2001-09-28 2005-05-24 Lexar Media, Inc. Memory system sectors
US7120729B2 (en) 2002-10-28 2006-10-10 Sandisk Corporation Automated wear leveling in non-volatile storage systems
US7492660B2 (en) 1989-04-13 2009-02-17 Sandisk Corporation Flash EEprom system
JP2011028793A (en) * 2009-07-22 2011-02-10 Toshiba Corp A semiconductor memory device
US8040727B1 (en) 1989-04-13 2011-10-18 Sandisk Corporation Flash EEprom system with overhead data stored in user data sectors
US9213606B2 (en) 2002-02-22 2015-12-15 Micron Technology, Inc. Image rescue
US9576154B2 (en) 2004-04-30 2017-02-21 Micron Technology, Inc. Methods of operating storage systems including using a key to determine whether a password can be changed
WO2018186453A1 (en) * 2017-04-07 2018-10-11 パナソニックIpマネジメント株式会社 Nonvolatile memory with increased number of usable times

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3991963B2 (en) 2002-10-16 2007-10-17 株式会社デンソー Vehicle control device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671885A (en) * 1979-11-15 1981-06-15 Nec Corp Semiconductor memory
JPS5671897A (en) * 1979-11-13 1981-06-15 Sanyo Electric Co Ltd Nonvolatile storage device
JPS5860490A (en) * 1981-10-05 1983-04-09 Yamatake Honeywell Co Ltd Controlling method for memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671897A (en) * 1979-11-13 1981-06-15 Sanyo Electric Co Ltd Nonvolatile storage device
JPS5671885A (en) * 1979-11-15 1981-06-15 Nec Corp Semiconductor memory
JPS5860490A (en) * 1981-10-05 1983-04-09 Yamatake Honeywell Co Ltd Controlling method for memory

Cited By (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60230250A (en) * 1984-04-27 1985-11-15 Meidensha Electric Mfg Co Ltd Data processing system of nonvolatile memory
JPS61265869A (en) * 1985-05-14 1986-11-25 Zaikoole Inc Electrically alterable non-volatile memory
JPH0581071B2 (en) * 1985-05-14 1993-11-11 Xicor Inc
JPS62135984A (en) * 1985-12-09 1987-06-18 Matsushita Electric Ind Co Ltd Ic card
JPS62136880A (en) * 1985-12-11 1987-06-19 Fujitsu Ltd Semiconductor memory device and manufacture of the same
JPS62283496A (en) * 1986-05-31 1987-12-09 Canon Inc Management system for of number of times of writing programmable read only memory
JPS62283497A (en) * 1986-05-31 1987-12-09 Canon Inc Management system for of number of times of writing programmable read only memory
JPS6324796U (en) * 1986-07-30 1988-02-18
JPS63181190A (en) * 1987-01-23 1988-07-26 Nippon Telegr & Teleph Corp <Ntt> Information storage method
JPS63234500A (en) * 1987-03-20 1988-09-29 Omron Tateisi Electronics Co Data protection system
EP0285067A1 (en) * 1987-03-31 1988-10-05 Alcatel Satmam Non-volatile memory with a limited writing rate and its use in postage meters
US4984191A (en) * 1987-03-31 1991-01-08 Smh Alcatel Limited write non-volatile memory and a franking machine making use thereof
FR2620246A1 (en) * 1987-03-31 1989-03-10 Smh Alcatel Non-volatile memory with low writing rates and postage machine by applying
JPS63292496A (en) * 1987-05-25 1988-11-29 Seiko Instr & Electronics Ltd Semiconductor nonvolatile memory device
US5568439A (en) * 1988-06-08 1996-10-22 Harari; Eliyahou Flash EEPROM system which maintains individual memory block cycle counts
US5862081A (en) * 1988-06-08 1999-01-19 Harari; Eliyahou Multi-state flash EEPROM system with defect management including an error correction scheme
US5909390A (en) * 1988-06-08 1999-06-01 Harari; Eliyahou Techniques of programming and erasing an array of multi-state flash EEPROM cells including comparing the states of the cells to desired values
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5835415A (en) * 1988-06-08 1998-11-10 Harari; Eliyahou Flash EEPROM memory systems and methods of using them
US5712819A (en) * 1988-06-08 1998-01-27 Harari; Eliyahou Flash EEPROM system with storage of sector characteristic information within the sector
US5642312A (en) * 1988-06-08 1997-06-24 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
US5434825A (en) * 1988-06-08 1995-07-18 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
US5583812A (en) * 1988-06-08 1996-12-10 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
US5544118A (en) * 1988-06-08 1996-08-06 Harari; Eliyahou Flash EEPROM system cell array with defect management including an error correction scheme
US5963480A (en) * 1988-06-08 1999-10-05 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices
US5719808A (en) * 1989-04-13 1998-02-17 Sandisk Corporation Flash EEPROM system
US6462992B2 (en) 1989-04-13 2002-10-08 Sandisk Corporation Flash EEprom system
US7460399B1 (en) 1989-04-13 2008-12-02 Sandisk Corporation Flash EEprom system
US7492660B2 (en) 1989-04-13 2009-02-17 Sandisk Corporation Flash EEprom system
US5999446A (en) * 1989-04-13 1999-12-07 Sandisk Corporation Multi-state flash EEprom system with selective multi-sector erase
US5602987A (en) * 1989-04-13 1997-02-11 Sandisk Corporation Flash EEprom system
US5936971A (en) * 1989-04-13 1999-08-10 Sandisk Corporation Multi-state flash EEprom system with cache memory
US8040727B1 (en) 1989-04-13 2011-10-18 Sandisk Corporation Flash EEprom system with overhead data stored in user data sectors
US6373747B1 (en) 1989-04-13 2002-04-16 Sandisk Corporation Flash EEprom system
JPH03181716A (en) * 1989-12-08 1991-08-07 Sanyo Electric Co Ltd Electronically controlled apparatus
EP0455238A2 (en) * 1990-05-02 1991-11-06 DeTeMobil Deutsche Telekom MobilNet GmbH Method for increasing the utilisation period of information carriers with EEPROM
US5544356A (en) * 1990-12-31 1996-08-06 Intel Corporation Block-erasable non-volatile semiconductor memory which tracks and stores the total number of write/erase cycles for each block
US5592669A (en) * 1990-12-31 1997-01-07 Intel Corporation File structure for a non-volatile block-erasable semiconductor flash memory
US5630093A (en) * 1990-12-31 1997-05-13 Intel Corporation Disk emulation for a non-volatile semiconductor memory utilizing a mapping table
US7353325B2 (en) 1991-09-13 2008-04-01 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6850443B2 (en) 1991-09-13 2005-02-01 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6081447A (en) * 1991-09-13 2000-06-27 Western Digital Corporation Wear leveling techniques for flash EEPROM systems
US6594183B1 (en) 1991-09-13 2003-07-15 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
EP0544252A2 (en) * 1991-11-28 1993-06-02 Fujitsu Limited Data management system for programming-limited type semiconductor memory and IC memory card having the data management system
US5530827A (en) * 1991-11-28 1996-06-25 Fujitsu Limited Data management system for programming-limited type semiconductor memory and IC memory card employing data save/erase process with flag assignment
US5673383A (en) * 1992-01-10 1997-09-30 Kabushiki Kaisha Toshiba Storage system with a flash memory module
US5559956A (en) * 1992-01-10 1996-09-24 Kabushiki Kaisha Toshiba Storage system with a flash memory module
US5544119A (en) * 1992-10-30 1996-08-06 Intel Corporation Method for assuring that an erase process for a memory array has been properly completed
JPH06302194A (en) * 1993-01-20 1994-10-28 Canon Inc Information processor
JPH06338195A (en) * 1993-05-31 1994-12-06 Nec Corp Device for managing number of writing times of electrically erasable nonvolatile memory
FR2712412A1 (en) * 1993-11-12 1995-05-19 Peugeot Safeguarding data in EEPROM microprocessor circuit in motor vehicle
US5765175A (en) * 1994-08-26 1998-06-09 Intel Corporation System and method for removing deleted entries in file systems based on write-once or erase-slowly media
US6115785A (en) * 1995-07-31 2000-09-05 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US6128695A (en) * 1995-07-31 2000-10-03 Lexar Media, Inc. Identification and verification of a sector within a block of mass storage flash memory
US6912618B2 (en) 1995-07-31 2005-06-28 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US6172906B1 (en) 1995-07-31 2001-01-09 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6223308B1 (en) 1995-07-31 2001-04-24 Lexar Media, Inc. Identification and verification of a sector within a block of mass STO rage flash memory
US5930815A (en) * 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6145051A (en) * 1995-07-31 2000-11-07 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US6393513B2 (en) 1995-07-31 2002-05-21 Lexar Media, Inc. Identification and verification of a sector within a block of mass storage flash memory
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6125435A (en) * 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
US5928370A (en) * 1997-02-05 1999-07-27 Lexar Media, Inc. Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
US6122195A (en) * 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
US6587382B1 (en) 1997-03-31 2003-07-01 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
US6081878A (en) * 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6076137A (en) * 1997-12-11 2000-06-13 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6327639B1 (en) 1997-12-11 2001-12-04 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6813678B1 (en) 1998-01-22 2004-11-02 Lexar Media, Inc. Flash memory system
US6374337B1 (en) 1998-11-17 2002-04-16 Lexar Media, Inc. Data pipelining method and apparatus for memory control circuit
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6141249A (en) * 1999-04-01 2000-10-31 Lexar Media, Inc. Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
US6262918B1 (en) 1999-04-01 2001-07-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6134151A (en) * 1999-04-01 2000-10-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US6898662B2 (en) 2001-09-28 2005-05-24 Lexar Media, Inc. Memory system sectors
US9213606B2 (en) 2002-02-22 2015-12-15 Micron Technology, Inc. Image rescue
US7120729B2 (en) 2002-10-28 2006-10-10 Sandisk Corporation Automated wear leveling in non-volatile storage systems
US7552272B2 (en) 2002-10-28 2009-06-23 Sandisk Corporation Automated wear leveling in non-volatile storage systems
US9576154B2 (en) 2004-04-30 2017-02-21 Micron Technology, Inc. Methods of operating storage systems including using a key to determine whether a password can be changed
US10049207B2 (en) 2004-04-30 2018-08-14 Micron Technology, Inc. Methods of operating storage systems including encrypting a key salt
US8687420B2 (en) 2009-07-22 2014-04-01 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP2011028793A (en) * 2009-07-22 2011-02-10 Toshiba Corp A semiconductor memory device
WO2018186453A1 (en) * 2017-04-07 2018-10-11 パナソニックIpマネジメント株式会社 Nonvolatile memory with increased number of usable times

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