JPS58211158A - Electrophotographic receptor - Google Patents

Electrophotographic receptor

Info

Publication number
JPS58211158A
JPS58211158A JP9435382A JP9435382A JPS58211158A JP S58211158 A JPS58211158 A JP S58211158A JP 9435382 A JP9435382 A JP 9435382A JP 9435382 A JP9435382 A JP 9435382A JP S58211158 A JPS58211158 A JP S58211158A
Authority
JP
Japan
Prior art keywords
selenium
temp
thermal analysis
differential thermal
peak
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9435382A
Other languages
Japanese (ja)
Inventor
Mitsuru Narita
満 成田
Hideki Kino
喜納 秀樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP9435382A priority Critical patent/JPS58211158A/en
Publication of JPS58211158A publication Critical patent/JPS58211158A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Abstract

PURPOSE:To obtain an electrophotographic receptor good in repetition fatigue characteristics, by vapor-depositing a selenium material having width of peak temps. of exothermic reaction measured by differential thermal analysis in a specified range on a substrate to form a photosensitive layer. CONSTITUTION:The selenium material, such as selenium or its alloy, such as selenium and tellurium alloy is analyzed by the differential thermal analysis, and the material is selected having temp. width measured of the peaks (temp. difference between the initial peak temp. and the end peak temp.) of exothermic reaction within the range of 8-30 deg.C. The selected material is vapor-deposited onto the substrate of aluminum or the like to obtain the intended electrophotographic receptor low in fatigue. The differential thermal analysis is conducted in the following conditions: alpha-Al2O3 as the standard sample, chromel-alumel as the thermocouple are used, and + or -250muV differential heat, and 10 deg.C/min temp. rising speed are adopted.

Description

【発明の詳細な説明】 本発明はセレン材料からなる感光層を有する電子写真用
感光体に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrophotographic photoreceptor having a photosensitive layer made of selenium material.

静電式複写機、プリンタなどに用いられるそのような電
子写真用感光体は、真空槽中(こ粒状セレンを入れた容
器を置き、この粒状セレンを溶解、蒸発せしめて、例え
ばアルミニウム管のような導電性基体上に蒸着して感光
層を形成することによって製作される。しかしこの種の
感光体は、感光層を同一蒸着条件でもって蒸着させたも
のでも、帯電低下、残留電位の上昇にあられれるくり返
し疲労、現象特に残留電位の上昇が生じ、実際に複写機
に使用した場合、白地が黒化し、黒白のコントラストが
減少する。くり返し疲労特性の良好な感光体を得るため
に、セレンへの他元素あるいは酸化物の添加が行われて
いる。そして感光体のくり返し疲労特性に対する感光層
材料の選定の基準として、特開昭54−139737号
公報によれば示差熱分析により測定した発熱反応のピー
クが150°C以上の温度領域にあるセレン材料が望ま
しいとされている。
Such electrophotographic photoreceptors used in electrostatic copying machines, printers, etc. are manufactured by placing a container containing granular selenium in a vacuum chamber, dissolving and evaporating the granular selenium, and then molding it into an aluminum tube, for example. This type of photoreceptor is manufactured by forming a photosensitive layer by vapor deposition on a conductive substrate. However, this type of photoreceptor suffers from a decrease in charging and an increase in residual potential, even if the photosensitive layer is deposited under the same deposition conditions. The phenomenon of repeated fatigue, especially an increase in the residual potential, occurs, and when actually used in a copying machine, the white background turns black and the black-white contrast decreases.In order to obtain a photoreceptor with good repeated fatigue characteristics, selenium is used. Other elements or oxides are added.According to Japanese Patent Application Laid-open No. 139737/1984, exothermic reaction measured by differential thermal analysis is used as a criterion for selecting photosensitive layer materials for the repeated fatigue characteristics of photoreceptors. It is said that a selenium material whose peak temperature is in a temperature range of 150° C. or higher is desirable.

本発明はさらに別の選定基準を用いてくり返し疲労特性
の良好な感光体を提供することを目的とする。
Another object of the present invention is to provide a photoreceptor with good repeated fatigue characteristics using another selection criterion.

この目的は感光層が示差熱分析により測定した発熱反応
のピークの温度幅が8〜30℃の範囲に′ある材料を蒸
着してなることによって達成される。
This object is achieved by forming the photosensitive layer by depositing a material whose exothermic reaction peak temperature range, as measured by differential thermal analysis, is in the range of 8 DEG to 30 DEG C.

本発明の効果は以下に述べる試験例から知ることができ
た。原料セレン合金としてテルル約5.5チを含む合金
を複数ロット作成し、各ロットより採取した試料につい
て示差熱分析を行った。示差熱分析は標準試料としてα
−AI、0.、熱電対としてクロメルアルメルを用い、
示差熱±250μV1昇温速度10℃/ m i nの
条件で行った。測定器は理学電機工業DTA−M800
5を使用した。その結果、組成はほぼ同じであるにかが
ゎらず、ロットにより発熱ピークのピーク幅(ピークの
初期温度と終了温度の温度差)が異なることが分かった
。次にこれらの原料を55〜65℃の温度に保持したア
ルミニウム基板上に1μm/minの蒸着速度で約60
μmの厚さに蒸着した。これらの試料について帯電電位
、感度、300回くり返し後の残留電位を測定した。
The effects of the present invention could be understood from the test examples described below. Multiple lots of alloys containing approximately 5.5% tellurium were prepared as raw material selenium alloys, and differential thermal analysis was performed on samples taken from each lot. Differential thermal analysis uses α as a standard sample.
- AI, 0. , using chromel alumel as a thermocouple,
The test was carried out under the conditions of differential heat ±250 μV1 and temperature increase rate of 10° C./min. The measuring device is Rigaku Denki DTA-M800.
5 was used. As a result, it was found that although the compositions were almost the same, the width of the exothermic peak (the temperature difference between the initial temperature and the final temperature of the peak) differed depending on the lot. Next, these raw materials were deposited on an aluminum substrate kept at a temperature of 55 to 65°C at a deposition rate of 1 μm/min for about 60 min.
It was deposited to a thickness of μm. For these samples, the charging potential, sensitivity, and residual potential after 300 repetitions were measured.

その結果を第1表に示す。The results are shown in Table 1.

第  1  表 第1表から明らかなように、発熱反応のピーク幅が8℃
未満ではくり返し疲労による残留電位が大きく、30℃
以上では帯電電位が低下する。従ってピーク幅8〜30
℃の範囲にある合金を用いて蒸着することが望ましい。
Table 1 As is clear from Table 1, the peak width of the exothermic reaction was 8°C.
Below 30℃, the residual potential due to repeated fatigue is large.
Above this, the charging potential decreases. Therefore, the peak width is 8 to 30
It is desirable to deposit with an alloy in the range of .degree.

その場合生じた感光層中のSe/Te 合金についても
発熱ピークの幅は8〜30℃にあることが確かめられた
。なおピーク幅が30℃を超えると暗減表も増加する。
It was confirmed that the width of the exothermic peak of the Se/Te alloy in the photosensitive layer produced in that case was in the range of 8 to 30°C. Note that when the peak width exceeds 30°C, the darkening table also increases.

感光層がキャリア発生層(OGL)とキャリヤ移動層(
OTL)からなる機能分離型積層感光層においては、帯
電電位、残留電位はOTL によって作用されるので、
本発明に基づき発熱ピーク幅8〜30℃の範囲にあるセ
レン合金はOTLの蒸着に用いられることが有効である
。円筒状アルミニウム基体上にOTLとして本発明に基
づ<5.5%Te/Se合金を用いて55μmの蒸着膜
を形成し、その上にOGL として22.5%Te/S
e合金の蒸着層を形成したセレン合金感光体はくり返し
疲労特性が良く、他のゼログラフ特性についても従来の
ものと比較して何ら遜色がなく、多数の複写、プリント
に好適である。
The photosensitive layer consists of a carrier generation layer (OGL) and a carrier movement layer (
In a functionally separated laminated photosensitive layer consisting of OTL, the charging potential and residual potential are affected by OTL.
According to the present invention, it is effective to use a selenium alloy having an exothermic peak width in the range of 8 to 30° C. for OTL vapor deposition. A 55 μm deposited film was formed on a cylindrical aluminum substrate using <5.5% Te/Se alloy according to the present invention as OTL, and 22.5% Te/S was deposited on top of it as OGL.
A selenium alloy photoreceptor on which an e-alloy vapor deposited layer is formed has good repeated fatigue characteristics, and other xerographic characteristics are comparable to conventional ones, making it suitable for a large number of copies and prints.

このように示差熱分析の発熱ピーク幅が8〜30℃の範
囲にあるような広い発熱ピーク幅を持っセレンまたはセ
レン合金を用いた場合、電子写真用感光体として何故く
り返し疲労特性が良好になるかについての詳細は分かっ
ていない。発熱ピークは物理現象としては結晶化過程で
ある。結晶化温度領域が広がる理由としては、不純物量
または不純物の種類が多いということが考えられる。ま
たSe8リンク、Se6リンク、ロングチェイン、ショ
ートチェイン等と言った分子構造の種類が多いと考えら
れる。しかしこれらと感光体特性との関連は明らかでな
い。。
When using selenium or a selenium alloy that has a wide exothermic peak width in the range of 8 to 30°C in differential thermal analysis, why does it have good repeated fatigue characteristics as a photoreceptor for electrophotography? I don't know the details about that. As a physical phenomenon, the exothermic peak is a crystallization process. A possible reason for the widening of the crystallization temperature range is that the amount of impurities or the types of impurities are large. Further, it is thought that there are many types of molecular structures such as Se8 link, Se6 link, long chain, short chain, etc. However, the relationship between these and photoreceptor characteristics is not clear. .

以上述べたように本発明は示差熱分析の発熱ピーク幅が
8〜30℃の範囲にあるセレンまたはセレン材料をアル
ミニウム等の基板上に蒸着して低疲労の電子写真用感光
体を得るもので、感光層材料のすぐれた評価方法として
その得られる効果は極めて大きい。
As described above, the present invention provides a low-fatigue electrophotographic photoreceptor by depositing selenium or selenium material whose exothermic peak width in differential thermal analysis is in the range of 8 to 30°C on a substrate such as aluminum. The effect obtained as an excellent evaluation method for photosensitive layer materials is extremely large.

Claims (1)

【特許請求の範囲】[Claims] 1)感光層が示差熱分析により測定された発熱反応のピ
ークの温度幅が8〜30℃の範囲にあるセレン材料を蒸
着してなることを特徴とする電子写真用感光体。
1) An electrophotographic photoreceptor characterized in that the photosensitive layer is formed by vapor-depositing a selenium material whose peak temperature range of exothermic reaction measured by differential thermal analysis is in the range of 8 to 30°C.
JP9435382A 1982-06-02 1982-06-02 Electrophotographic receptor Pending JPS58211158A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9435382A JPS58211158A (en) 1982-06-02 1982-06-02 Electrophotographic receptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9435382A JPS58211158A (en) 1982-06-02 1982-06-02 Electrophotographic receptor

Publications (1)

Publication Number Publication Date
JPS58211158A true JPS58211158A (en) 1983-12-08

Family

ID=14107915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9435382A Pending JPS58211158A (en) 1982-06-02 1982-06-02 Electrophotographic receptor

Country Status (1)

Country Link
JP (1) JPS58211158A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5782618A (en) * 1996-09-24 1998-07-21 Sanyo Electric Co., Ltd. Rotary compressor having a round cylinder block
US8803518B2 (en) 2008-07-17 2014-08-12 Meas Deutschland Gmbh Measuring apparatus for measuring magnetic properties, and method for producing such a measuring apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139737A (en) * 1978-04-21 1979-10-30 Ricoh Co Ltd Photoreceptor for electrophotography

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139737A (en) * 1978-04-21 1979-10-30 Ricoh Co Ltd Photoreceptor for electrophotography

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5782618A (en) * 1996-09-24 1998-07-21 Sanyo Electric Co., Ltd. Rotary compressor having a round cylinder block
US8803518B2 (en) 2008-07-17 2014-08-12 Meas Deutschland Gmbh Measuring apparatus for measuring magnetic properties, and method for producing such a measuring apparatus

Similar Documents

Publication Publication Date Title
US3874917A (en) Method of forming vitreous semiconductors by vapor depositing bismuth and selenium
US3903107A (en) Direct alpha to X phase conversion of metal containing phthalocyanine
JPS58211158A (en) Electrophotographic receptor
JPH01315766A (en) Manufacture of image forming member for xerography
US3524745A (en) Photoconductive alloy of arsenic,antimony and selenium
US2863768A (en) Xerographic plate
US3932180A (en) Direct alpha to X phase conversion of metal-free phthalocyanine
US3532496A (en) Xerographic plates and processes employing homogeneous dispersions of vitreous selenium and sensitizing dyes as the photoconductive layer
JPS59133551A (en) Electrophotographic sensitive body
US3501343A (en) Light insensitive xerographic plate and method for making same
JPS5944053A (en) Electrophotographic receptor
US5002734A (en) Processes for preparing chalcogenide alloys
US4894307A (en) Processes for preparing and controlling the fractionation of chalcogenide alloys
US5035857A (en) Processes for preparing chalcogenide alloys
US3619153A (en) Photoconductive element and process employing a substituted silylisobutylethylenediamine adhesive interlayer
US3666554A (en) Manufacture of electrophotographic plate
JPH01179166A (en) Bipolarly electrified electrophotographic sensitive body
US4415642A (en) Electrophotographic member of Se-Te-As with halogen
JPH02171756A (en) Vacuum evaporation source container of photosensitive body for electrophotography
JPS60250358A (en) Electrophotographic sensitive body
JPS60166953A (en) Manufacture of vapor deposition source selenium material of photosensitive layer
JPS59121341A (en) Manufacture of photosensitive selenium body for electrophotography
US5075191A (en) Process for controlling alloy fractionation
JPS6042764A (en) Electrophotographic sensitive body
JPS58100854A (en) Electrophotographic receptor