JPS58210166A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS58210166A JPS58210166A JP9311982A JP9311982A JPS58210166A JP S58210166 A JPS58210166 A JP S58210166A JP 9311982 A JP9311982 A JP 9311982A JP 9311982 A JP9311982 A JP 9311982A JP S58210166 A JPS58210166 A JP S58210166A
- Authority
- JP
- Japan
- Prior art keywords
- anode electrode
- shutter plate
- cover
- shutter
- scum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Abstract
Description
【発明の詳細な説明】
本発明はスパッタ装置、特にスパッタ装置のターゲット
のシャッター構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a sputtering apparatus, and more particularly to a shutter structure of a target of a sputtering apparatus.
従来、スパッタＩ＆雪のシャッターは、第１図に示すよ
うに、ブリスパッタ中に安定したプラズマ放電を維持す
るために、アノード電＆３の内側に配設されるターゲッ
ト２とシャッター板１との間隔（））を２５〜３０ｍ１
とっていた。この構造では、シャッター板１とアノ
ード電極３との丁き間から、ブリスパッタ中に、スカム
、酸化物等がもれ、これらの物質が被処理物である半導
体板の８１と金属との間に付着形成され、完全なオーミ
ックコンタクトがとれないという欠点があった。Conventionally, the sputter I & snow shutter has been designed with a distance ( )) 25-30m1
I was taking it. In this structure, scum, oxides, etc. leak from the gap between the shutter plate 1 and the anode electrode 3 during bliss sputtering, and these substances are deposited between the semiconductor plate 81 that is the object to be processed and the metal. This has the disadvantage that it is formed by adhesion and perfect ohmic contact cannot be made.
したかつて、本発明の目的はブリスパッタ中にシャッタ
ー板とアノード電極等との間から酸化物等が漏洩しない
スパッタ装置を提供することにあるー
以下本発明を実施例によって詳細に誇明する。SUMMARY OF THE INVENTION An object of the present invention is to provide a sputtering apparatus in which oxides and the like do not leak from between a shutter plate and an anode electrode during bliss sputtering.
第２図は本発明の一実施例によるスパッタ装置における
シャッター構造を示す。同図において、シャッター板１
はアノード電極３より外径が大きく、アノード電極３を
カバーできるように絢縁に下方に延在するリング状のカ
バー６を有する構造とした。このようなシャッター構造
の開閉には、シャッター板をアーム７を弁して支持する
回転軸８をいったん上方向に移動させた後に回転軸８０
回動によって開閉するもＱ）とする。この実施例では、
スカムの遮蔽効果をさらに増すために、アノード電極３
等を支持するベースプレート５に前記力・・−６の先端
に上面が密着するアダ、ブタ−４を設けているうこのた
め、アノード電極３とシャッター板１が完全に遮蔽され
る。また、このアダプター４によってシャッター板１．
の下部のカバー６とアノード電極３とのオーバーラツプ
量を小さくし、シャッター板１の上下方向の移動量を少
なくすることができろう
第３図は他の実施例を示す要部断面図である。FIG. 2 shows a shutter structure in a sputtering apparatus according to an embodiment of the present invention. In the same figure, shutter plate 1
has a larger outer diameter than the anode electrode 3, and has a structure including a ring-shaped cover 6 extending downward on the edge so as to cover the anode electrode 3. To open and close such a shutter structure, the rotary shaft 8 that supports the shutter plate with the arm 7 is moved upward, and then the rotary shaft 80 is moved upward.
It opens and closes by rotation (Q). In this example,
In order to further increase the scum shielding effect, the anode electrode 3
The anode electrode 3 and the shutter plate 1 are completely shielded because the base plate 5 supporting the above-mentioned force...-6 is provided with an adder and a cover 4 whose upper surfaces are in close contact with the tip of the force...-6. In addition, by this adapter 4, the shutter plate 1.
The amount of overlap between the lower cover 6 and the anode electrode 3 can be reduced, and the amount of vertical movement of the shutter plate 1 can be reduced. FIG. 3 is a sectional view of a main part showing another embodiment.
この例では前記実施例と異なり、アダプターを設けてい
ない構造である。この実施例はアダプターがないことか
らシャッター板１のカバー６とアノード電極３との間に
は隙間９がある程度であるが、その隙ＩＶ１９は狭いこ
とから、ブリスパッタ中にこの隙間９からスカム、酸化
物等が６？’ＩＬ難くなり、被処理物である半導体板の
シリコンと金属との間に入り込み難くなる。この結果、
シリコンと金属との間のオーミック性は良好となる。This example differs from the previous example in that it does not have an adapter. In this embodiment, since there is no adapter, there is a gap 9 to some extent between the cover 6 of the shutter plate 1 and the anode electrode 3, but since the gap IV19 is narrow, scum and oxidation are formed from this gap 9 during bliss sputtering. 6 things? 'IL becomes difficult, and it becomes difficult to get between the silicon and metal of the semiconductor board that is the object to be processed. As a result,
The ohmic properties between silicon and metal become good.
なお、本発明は前記実施例に限定されない。Note that the present invention is not limited to the above embodiments.
以上のように、本発明によれば、ブリスパッタ中にシャ
ッター板とアノード電極等の間から酸化物、スカム等が
漏洩しないことから、扱処理物表面とスパッタ物質との
界面にスカムや酸化物等が付着しないことから、艮好な
スパッタが行なえる。As described above, according to the present invention, since oxides, scum, etc. do not leak from between the shutter plate and the anode electrode during bliss sputtering, scum, scum, etc. Because there is no adhesion, sputtering can be performed with good quality.
第１図は従来のスパッタ装置のシャッタ一部分を示す断
面図、
第２図は本発明の一実施例によるスパッタ装置のシャッ
タ一部分を示す断面図、
第３図は他の実施例による同様の断面図である。
１・・・シャッター板、２・・・ターゲット、３・・・
アノード電極、４・・アダプター、５・・・ベースプレ
ート、６・−カバー、７・・・アーム、８・・・回転軸
、９・・・隙間。
代理人 弁理士 薄 １）利 幸
第 １ 図
第２図
第 ３ 図FIG. 1 is a sectional view showing a portion of the shutter of a conventional sputtering device, FIG. 2 is a sectional view showing a portion of the shutter of a sputtering device according to an embodiment of the present invention, and FIG. 3 is a similar sectional view of another embodiment. It is. 1...Shutter plate, 2...Target, 3...
Anode electrode, 4...Adapter, 5...Base plate, 6...-Cover, 7... Arm, 8... Rotating shaft, 9... Gap. Agent Patent Attorney Susuki 1) Toshiyuki 1 Figure 2 Figure 3
Claims (1)
配設されるアノード電極と、アノード電極およびターゲ
ットを被うとともに、回転制御される回転軸に固定され
るアームの先端に取り付けられ、かつシャッター動作時
に前記ターゲットおよびアノード電極を被うシャッター
板と、からなるスパッタ装置において、前記シャッター
板の下面周縁にはアノード電極の外周面を被うように突
出するリング状のカバーを設けるとともに、回転軸はシ
ャッター板とアノード電極とが干渉しないように必要時
昇降動作するように構成されていることを特徴とするス
パッタ装置。 ２、前記シャッター板はシャッター動作時にカバーの下
端がアノード電極の外＠に沿って配設されるリング状の
アダプターと接触することを特徴とする特許請求の範囲
第１項記載のスパッタ装置。[Claims] 1. A target, an anode electrode disposed so as to take the target, and an arm that covers the anode electrode and the target and is attached to the tip of an arm fixed to a rotating shaft whose rotation is controlled; and a shutter plate that covers the target and the anode electrode during shutter operation, wherein a ring-shaped cover is provided on the lower periphery of the shutter plate and protrudes to cover the outer circumferential surface of the anode electrode; A sputtering apparatus characterized in that the rotating shaft is configured to move up and down when necessary to prevent interference between the shutter plate and the anode electrode. 2. The sputtering apparatus according to claim 1, wherein the lower end of the cover of the shutter plate comes into contact with a ring-shaped adapter disposed along the outside of the anode electrode during shutter operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9311982A JPS58210166A (en) | 1982-06-02 | 1982-06-02 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9311982A JPS58210166A (en) | 1982-06-02 | 1982-06-02 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58210166A true JPS58210166A (en) | 1983-12-07 |
Family
ID=14073627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9311982A Pending JPS58210166A (en) | 1982-06-02 | 1982-06-02 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58210166A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62110261U (en) * | 1985-12-27 | 1987-07-14 | ||
| JP2009155706A (en) * | 2007-12-27 | 2009-07-16 | Canon Anelva Corp | Sputtering apparatus having shutter mechanism |
| KR20140138889A (en) | 2012-03-14 | 2014-12-04 | 캐논 아네르바 가부시키가이샤 | Sputtering device |
| CN106435498A (en) * | 2016-09-26 | 2017-02-22 | 中国电子科技集团公司第四十八研究所 | Magnetron sputtering target baffle plate mechanism |
| WO2023179998A1 (en) * | 2022-03-21 | 2023-09-28 | Fhr Anlagenbau Gmbh | Method and device for protecting oxygen-sensitive target materials in a coating source |
| WO2023179997A1 (en) * | 2022-03-21 | 2023-09-28 | Fhr Anlagenbau Gmbh | Shutter system for gap-free shielding of a coating source, and associated method |
-
1982
- 1982-06-02 JP JP9311982A patent/JPS58210166A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62110261U (en) * | 1985-12-27 | 1987-07-14 | ||
| JP2009155706A (en) * | 2007-12-27 | 2009-07-16 | Canon Anelva Corp | Sputtering apparatus having shutter mechanism |
| JP4562764B2 (en) * | 2007-12-27 | 2010-10-13 | キヤノンアネルバ株式会社 | Sputtering equipment |
| KR20140138889A (en) | 2012-03-14 | 2014-12-04 | 캐논 아네르바 가부시키가이샤 | Sputtering device |
| US9627187B2 (en) | 2012-03-14 | 2017-04-18 | Canon Anelva Corporation | Sputtering apparatus |
| CN106435498A (en) * | 2016-09-26 | 2017-02-22 | 中国电子科技集团公司第四十八研究所 | Magnetron sputtering target baffle plate mechanism |
| WO2023179998A1 (en) * | 2022-03-21 | 2023-09-28 | Fhr Anlagenbau Gmbh | Method and device for protecting oxygen-sensitive target materials in a coating source |
| WO2023179997A1 (en) * | 2022-03-21 | 2023-09-28 | Fhr Anlagenbau Gmbh | Shutter system for gap-free shielding of a coating source, and associated method |
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