JPS58205988A - イオン注入されたコンテイギユアス・デイスク・バブル素子のための受動的消去器 - Google Patents

イオン注入されたコンテイギユアス・デイスク・バブル素子のための受動的消去器

Info

Publication number
JPS58205988A
JPS58205988A JP58042510A JP4251083A JPS58205988A JP S58205988 A JPS58205988 A JP S58205988A JP 58042510 A JP58042510 A JP 58042510A JP 4251083 A JP4251083 A JP 4251083A JP S58205988 A JPS58205988 A JP S58205988A
Authority
JP
Japan
Prior art keywords
bubble
ion
implanted
passive
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58042510A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6138556B2 (OSRAM
Inventor
ウイリアム・ジヨン・カベラツク
イアン・ルイス・サンダ−ス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS58205988A publication Critical patent/JPS58205988A/ja
Publication of JPS6138556B2 publication Critical patent/JPS6138556B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0858—Generating, replicating or annihilating magnetic domains (also comprising different types of magnetic domains, e.g. "Hard Bubbles")
JP58042510A 1982-05-24 1983-03-16 イオン注入されたコンテイギユアス・デイスク・バブル素子のための受動的消去器 Granted JPS58205988A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/381,473 US4441166A (en) 1982-05-24 1982-05-24 Passive annihilator for contiguous-disk bubble devices
US381473 1982-05-24

Publications (2)

Publication Number Publication Date
JPS58205988A true JPS58205988A (ja) 1983-12-01
JPS6138556B2 JPS6138556B2 (OSRAM) 1986-08-29

Family

ID=23505170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58042510A Granted JPS58205988A (ja) 1982-05-24 1983-03-16 イオン注入されたコンテイギユアス・デイスク・バブル素子のための受動的消去器

Country Status (2)

Country Link
US (1) US4441166A (OSRAM)
JP (1) JPS58205988A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT403944B (de) * 1987-03-23 1998-06-25 Avl Verbrennungskraft Messtech Einspritzbrennkraftmaschine
JPH0487272A (ja) * 1990-07-30 1992-03-19 Agency Of Ind Science & Technol 鉛蓄電池

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040019A (en) * 1974-08-23 1977-08-02 Texas Instruments Incorporated Ion implanted magnetic bubble memory device having major and minor rows
JPS554792A (en) * 1978-06-27 1980-01-14 Ibm Magnetic bubble domain memory device

Also Published As

Publication number Publication date
JPS6138556B2 (OSRAM) 1986-08-29
US4441166A (en) 1984-04-03

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