JPS58205313A - Current mirror circuit - Google Patents

Current mirror circuit

Info

Publication number
JPS58205313A
JPS58205313A JP57090125A JP9012582A JPS58205313A JP S58205313 A JPS58205313 A JP S58205313A JP 57090125 A JP57090125 A JP 57090125A JP 9012582 A JP9012582 A JP 9012582A JP S58205313 A JPS58205313 A JP S58205313A
Authority
JP
Japan
Prior art keywords
transistor
emitter
voltage
current mirror
mirror circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57090125A
Other languages
Japanese (ja)
Other versions
JPS6158073B2 (en
Inventor
Yasunori Sakaguchi
阪口 康則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57090125A priority Critical patent/JPS58205313A/en
Publication of JPS58205313A publication Critical patent/JPS58205313A/en
Publication of JPS6158073B2 publication Critical patent/JPS6158073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To decrease the effect of load on the voltage fluctuation, by arranging a controlling transistor (TR) between emitters of a couple of TRs constituting a current mirror circuit and a power supply and controlling the controlling TR based on a voltage of an output terminal of the mirror circuit. CONSTITUTION:A base of the 3rd TRQ3 is connected to the output terminal of the current mirror circuit and its emitter potential is determined by the voltage at the output terminal. A resistor BA and diode groups D1-Dn are connected between the emitter of the TRQ3 and the power supply, a voltage between the emitter and the power supply is divided and applied to the base of the 4th TRQ4. The TRQ4 decides a current flowing to the current mirror circuit with this base voltage. As a result, even if a potential V1 of an output terminal P2 is fluctuated, the fluctuation in the emitter-collector voltage of the TRQ2 is suppressed.

Description

【発明の詳細な説明】 この発明は電流源の負荷の電圧が変動する場合に用いて
好適な電流ミラー回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a current mirror circuit suitable for use when the voltage of the load of a current source fluctuates.

従来のこの41111回路として一1図に示すものかめ
る。1−図において、Plは′繊−繊圧Vccか印加さ
れる1子、Q+は上記端子P1に直列接続された第1の
トランジスタで、ベースとコレクタか9fi絡されて鴫
流諒工Sに砿続されている。Qtは第1のトランジスl
 Qtとともに゛磁流ミラー用として構成された第2の
トランジスタであり、ベースおよび工之ツタか上記第1
のトランジスタQ+のベースおよびエミッタにそれぞれ
接続されている。 RLは上記第2のトランジスタQ、
のコレク省に直列接続された負荷、r、は電流出力端子
である。
The conventional 41111 circuit is shown in Figure 11. In Figure 1, Pl is the first transistor to which the fiber pressure Vcc is applied, Q+ is the first transistor connected in series to the terminal P1, and the base and collector are connected by 9fi to the It is continued. Qt is the first transistor l
It is a second transistor configured as a magnetic current mirror together with Qt, and the base and
are connected to the base and emitter of transistor Q+, respectively. RL is the second transistor Q,
A load, r, connected in series to the current output terminal is a current output terminal.

上記構成において、定嵐流源工Sの定―流工。とすると
、上記トランジス・りQ+、Q鵞の電流ミラー幼果・つ
まり両トランジスタQ1. Qtの各エミッタrkJ槓
比によって@@RLに電流工1が供給される。たとえば
しかるに、上記構成において、第゛2のトランジスタも
のコレクタと負荷RLとの振統点P、の磁位v。
In the above configuration, the fixed-flowing work of the fixed-flowing work S. Then, the current mirror infant of the above transistor Q+, Q+, that is, both transistors Q1. A current 1 is supplied to @@RL by each emitter rkJ ratio of Qt. For example, in the above configuration, the magnetic potential v at the vibration point P between the collector of the second transistor and the load RL.

が父動スる場合−該トランジスタQ鵞のエミッタ・コレ
クタ電圧が変動することになるので、ベース+m変調作
用により、負#RLに供帖されるi!隠工lは第2図の
ように1:紀也位V。が高くなるに従い小さくなってし
まう。つまりエミッタ・コレクタm=が小さくなるとと
もに、磁流kIIJ幅率h1凹か下がりコレクタ電流が
減るという欠点があった。
When is passively active - the emitter-collector voltage of the transistor Q will fluctuate, so i! will be supplied to the negative #RL due to the base+m modulation effect. Inkaku l is 1:Kiyai V as shown in Figure 2. becomes smaller as it gets higher. In other words, as the emitter-collector m= becomes smaller, the magnetic current kIIJ width ratio h1 decreases and the collector current decreases.

この発明は上記欠点を屏哨するためになされたもので、
電流ミラー用の1対のトランジスタのエミッタ・コレク
タm匝を、負荷の磁圧の変動によって変化しないように
帰還をかけることにより、負荷の電圧変動の影1111
+をほとんど受けない電流ミラー回路を提供することを
目的としてしζる。
This invention was made to overcome the above drawbacks.
By applying feedback so that the emitter-collector of the pair of transistors for the current mirror does not change due to fluctuations in the magnetic pressure of the load, the influence of voltage fluctuations in the load can be reduced.
The purpose of this invention is to provide a current mirror circuit that hardly receives +.

以下、この発明の一夾施例を図圓にしたがって説明する
Hereinafter, one embodiment of the present invention will be explained with reference to the diagram.

第6図はこの発明に係るmatラー回路の一例を示し、
第1因と同一部所には同一符号τ付して説明を省略する
FIG. 6 shows an example of a matt error circuit according to the present invention,
The same parts as the first cause are given the same reference numerals τ, and the explanation will be omitted.

同図において、Qlは第6のPNP)ランジスタであり
、この第6のトランジスタQ、のベースヲ第2のトラン
ジスタQ鵞のコレクタに1mし、ざらにこの弔3J1ラ
ンジスタQ3のエミッタから互に直りU汝枕された握I
&を固のダイオードD1〜Dnを介して第4のトランジ
スタQ4のベースに接続してあり、こり第4のトランジ
スタQ4のエミッタは上記第1および第2のトランジス
タQ+−Qtの各エミッタに汝杭されている。BAは上
記第4のトランジスI Q<のベースと端子P1との闇
の介挿接続されたノ(イアス諒Cある。
In the same figure, Ql is a sixth PNP transistor, and the base of this sixth transistor Q is connected to the collector of the second transistor Q by 1 m, and the emitters of this transistor Q3 are connected to each other. Thou shalt not hold my hand
& is connected to the base of the fourth transistor Q4 through solid diodes D1 to Dn, and the emitter of the fourth transistor Q4 is connected to each emitter of the first and second transistors Q+-Qt. has been done. BA is connected to the base of the fourth transistor IQ and the terminal P1.

上記−成において、第1および第2のトランジスタQ+
、Q*による1流ミラー効果で負荷RLに対スる4侃工
1を供給する111iI&は目■述の通りである。
In the above-mentioned - configuration, the first and second transistors Q+
, 111iI&, which supplies 4 forces 1 to the load RL by the first-class mirror effect due to Q*, is as described in (2).

いま、43および第4のトランジスタQs、Q4の6ヘ
ー ス−s t ツタ間ml+:t−t” t’Lぞれ
VBm、 、VBm4とし、ダイオードD、〜Dnの順
方向tM、圧kVrrとすれば、第2のトランジスタQ
、のエミッタ・コレクタ閣−田VOR□L下式で示され
る。
Now, let the 43rd and fourth transistors Qs and Q4 between the six terminals ml+: t-t''t'L be VBm, , VBm4, respectively, and the forward direction tM of the diodes D, ~Dn, and the pressure kVrr. Then, the second transistor Q
The emitter-collector function of , is expressed by the following formula.

vuml=7n4 + nV’p  VBm4    
   ”’(1)上記式において% VgyH,はvl
の値に依仔しない開議か成立している。したかつて負荷
のRLの′電圧の貧励によるベース−変調の効果はなく
一44図に示すように11L流工富の変動を機力抑制さ
せることができる。なお、端子P!の一位v1はvaO
(VBE1+nvD)とバイアス諒BAの残り磁土で決
定されるものである。
vuml=7n4 + nV'p VBm4
``'(1) In the above formula, %VgyH, is vl
The resolution was passed without depending on the value of . There is no base modulation effect due to poor excitation of the RL voltage of the load, and as shown in FIG. In addition, terminal P! The first place v1 is vaO
(VBE1+nvD) and the remaining magnetic field of the bias angle BA.

ところで、上記実−例では′−電流ミラー用第1および
第2のトランジスタQ+ −QmとしてPIIF)ラン
ジスタを用いたが% n p n )ランジスタであっ
てもよく、また、電圧レベルシフトに偵数個のダイオー
ドD1〜Drlz用いたが、このダイオードD。
By the way, in the above example, PIIF) transistors were used as the first and second current mirror transistors Q+ -Qm, but they may also be % n p n ) transistors. diodes D1 to Drlz were used, and this diode D.

〜Dnに代えて抵抗体を用いてもよく、この場合バイア
ス61人は定電法回路になる。
~Dn may be replaced with a resistor, and in this case, the bias 61 becomes a constant voltage circuit.

以上のように、この発明は電流ミラー用の1対のトラン
ジスタに対して電流帰還させることによ如、amの電圧
変動に左右されない電流ミラーー路を提供することがで
右る。
As described above, the present invention is capable of providing a current mirror path that is not affected by voltage fluctuations in am by feeding back current to a pair of current mirror transistors.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の電流ミラー回路を不す電気回路図、第2
図は従来の回′Mにおける負荷燻流と電流出力端子磁位
とのFA係図、;15図はこの発明に係る電流ミラー回
路の一例を示す一気回1図、第4図はこの発明の1g回
路における負何嵐流と嵐流出力端子鑞位との関係図であ
る・ BA・・・バイアスffi% DI 〜Dn・・・ダイ
オード、工S・・・電流源、Ql−Qm・・・電流ミラ
ー用トランジスタ、Qs・・・第6のトランジスターQ
4・・・第4のトランジスタ、RL・・・負荷。 なお、図中同一符号は同一もしくは相当部分を2トす− 代理人為野信−(外1名) 第1図 R 第2図 VOVcc 第3図 第4図 V   Vcc
Figure 1 is an electrical circuit diagram that eliminates the conventional current mirror circuit;
The figure shows the FA relationship between the load current and the current output terminal magnetic potential in a conventional cycle 'M; Figure 15 shows an example of the current mirror circuit according to the present invention; This is a diagram of the relationship between the negative storm current and the storm flow output terminal level in a 1g circuit. BA...Bias ffi% DI~Dn...Diode, S...Current source, Ql-Qm... Current mirror transistor, Qs...Sixth transistor Q
4...Fourth transistor, RL...Load. In addition, the same reference numerals in the figures refer to the same or corresponding parts. Agent Shin Tameno (one other person) Figure 1 R Figure 2 VOVcc Figure 3 Figure 4 V Vcc

Claims (1)

【特許請求の範囲】[Claims] (1)、1対のトランジスタのベース同士および工iツ
l同士を接続し、一方のトランジスタのコレクタ・ベー
スを短絡するとともに、電流源に接続し、他方のトラン
ジスタのコレクタを電流出力端トシ、この電流出力端を
第6のトランジスタのベースに接続し、第6のトランジ
スタのエミッタを、バイアス源に直列接続された*&個
のダイオードもしくは定電流回路に直列接続された抵抗
体を介して第4のトランジスタのベースに接続して、第
4のトランジスタのエミッタを前記電流ミラ用の△ 1対のトランジスタの各エミッタに接続したことを特徴
とする電流ミラー回路。
(1) Connect the bases of a pair of transistors and the devices together, short-circuit the collector and base of one transistor, and connect it to a current source, connect the collector of the other transistor to the current output terminal, This current output terminal is connected to the base of the sixth transistor, and the emitter of the sixth transistor is connected to the sixth transistor via *& diodes connected in series to a bias source or a resistor connected in series to a constant current circuit. 4, and the emitter of the fourth transistor is connected to each emitter of the pair of current mirror transistors.
JP57090125A 1982-05-25 1982-05-25 Current mirror circuit Granted JPS58205313A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57090125A JPS58205313A (en) 1982-05-25 1982-05-25 Current mirror circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57090125A JPS58205313A (en) 1982-05-25 1982-05-25 Current mirror circuit

Publications (2)

Publication Number Publication Date
JPS58205313A true JPS58205313A (en) 1983-11-30
JPS6158073B2 JPS6158073B2 (en) 1986-12-10

Family

ID=13989783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57090125A Granted JPS58205313A (en) 1982-05-25 1982-05-25 Current mirror circuit

Country Status (1)

Country Link
JP (1) JPS58205313A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH042569U (en) * 1990-03-14 1992-01-10
JP7150576B2 (en) 2018-11-26 2022-10-11 タクボエンジニアリング株式会社 PAINT FILLING UNIT AND PAINT FILLING APPARATUS INCLUDING THE SAME

Also Published As

Publication number Publication date
JPS6158073B2 (en) 1986-12-10

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