JPS58204543A - Resin molding method for semiconductor - Google Patents
Resin molding method for semiconductorInfo
- Publication number
- JPS58204543A JPS58204543A JP8847982A JP8847982A JPS58204543A JP S58204543 A JPS58204543 A JP S58204543A JP 8847982 A JP8847982 A JP 8847982A JP 8847982 A JP8847982 A JP 8847982A JP S58204543 A JPS58204543 A JP S58204543A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- semiconductor
- resin
- semiconductor element
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 title claims abstract description 55
- 229920005989 resin Polymers 0.000 title claims abstract description 55
- 238000000465 moulding Methods 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims description 72
- 238000005452 bending Methods 0.000 claims abstract description 11
- 239000004020 conductor Substances 0.000 claims description 2
- 210000003127 knee Anatomy 0.000 claims 1
- 238000004904 shortening Methods 0.000 abstract 1
- 238000007689 inspection Methods 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000003303 reheating Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000002468 fat body Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、半導体素子の樹脂モールド成形方法の改良
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a resin molding method for semiconductor elements.
ところで、従来の半導ｆトの樹脂モールド成形方法にお
いては、その成形全丁程か個々に分離して独立的に行な
イっれているため、各工程毎に成形作文か中断して全体
的な成形作業能率が低下する要因となっている。また、
各工程毎に順次成形されていく樹脂モールド加工品は夫
々の成形工程毎に成形ミス或は不良品の発生等１こより
順次減少するのか通例であることから、例えば第一工程
であるナンディング工程におけるグイボンダー、即ち、
゛Ｆ−導体素丁素子リードフレーム、Ｌに取り付けたり
−ドフレームの数を、所要の成形数よりも予め多く定め
てお（必要があり、このことは無用の成形時間を増加し
、或は無用の成形品を成形するといった弊害がある。史
には、十記した従来方法においのみならず、各工程に対
応した装置を各別イこ備えておく必要があるため、成形
品のコストアップを招来すると共に、成形装置類か高価
なものとなる等の欠点を有していた。By the way, in the conventional resin molding method for semiconductor devices, the entire molding process is performed separately and independently, so the molding process is interrupted after each process and the entire process is performed separately. This is a factor that reduces molding efficiency. Also,
For resin molded products that are molded sequentially in each process, it is normal for molding errors or defective products to occur in each molding process to decrease from one to the next. Guibonda in , viz.
゛It is necessary to predetermine the number of lead frames attached to the F-conductor element lead frame and L to be larger than the required number of moldings (this may increase unnecessary molding time or This has the disadvantage of molding unnecessary molded products.In addition to the conventional methods mentioned above, it is necessary to have separate equipment for each process, which increases the cost of molded products. In addition, the molding equipment has disadvantages such as expensive molding equipment.
本発明は、半導体リードフレームに対する半導体素子の
ボンディング工程と、上記半導体素子の樹脂モールディ
ング工程と、上記リードフレームの所要個所を切除する
と共に、そのリードを所要角度に夫々折り曲げるカット
ペンディング工程とを自動的に且つ゛連続的に行なうこ
とを特徴とする半導体の樹脂モールド成形方法に係り、
また、半導体リードフレームに対する半導体素子のボン
ディング工程と、上記半導体素子の樹脂モールディング
工程と、上記リードフレームの、所要個所を切除すると
共に、そのリードを所要角度に夫々折り曲けるカットペ
ンディング工程と、成形樹脂体に所要−項を標記するマ
ーキング工程とを自動的に（１，つ連続的に行なうこと
を特徴とする半導体の樹脂モールド成形方法に係り、ま
た、半導体リードフレームに対する半導体素子のボンデ
ィング工程と、ト記半導体素子の樹脂モールディングエ
稈と、上記リードフレームの所要個所を切除すると共に
、そのリードを所要角度に夫々折り曲げるカットペンデ
ィング工程と、該リードの夫々に対するデツピング工程
とを自動的に且つ連続的に行なうことを特徴とする半導
体の樹脂モールド成形方法に係り、また、半導体リード
フレームに対する半導体素子のボンディング工程と、上
記半導体素子の樹脂モールディング１１程と、成形樹脂
体を１２０°Ｃ〜１９０°Ｃの温度にて再加熱して品質
の安定化を図るためのアフターキュアーリング工程と、
上記リードフレームの所要個所を切除すると共に、その
リードを所要角度に夫々折り曲げるカットペンディング
工程とを自動的に陸つ連続的に行なうことを特徴とする
半導体の樹脂モールド成形方法に係るものであり、全体
的な樹脂モールド成形作業時間の短縮化と効率の良い成
形方法を提供して、上述したような従来の弊害を未然に
防止することを目的とするものである。The present invention automatically performs a bonding process of a semiconductor element to a semiconductor lead frame, a resin molding process of the semiconductor element, and a cut-pending process of cutting out required parts of the lead frame and bending the leads at required angles. Relating to a resin molding method for semiconductors, which is characterized in that it is carried out continuously,
Further, a bonding process of a semiconductor element to a semiconductor lead frame, a resin molding process of the semiconductor element, a cut-pending process of cutting out required parts of the lead frame and bending the leads at required angles, and a molding process. The present invention relates to a resin molding method for a semiconductor, characterized in that a marking process of marking required items on a resin body is automatically (one step) performed continuously, and a process of bonding a semiconductor element to a semiconductor lead frame. , A cut-pending process of cutting out the resin molding end of the semiconductor element and the required portions of the lead frame and bending the leads at a required angle, and a depping process for each of the leads are automatically and continuously performed. It also relates to a method for resin molding a semiconductor, characterized in that the bonding process of the semiconductor element to the semiconductor lead frame, the resin molding of the semiconductor element 11, and the molded resin body at 120°C to 190°C. an after-curing process to stabilize quality by reheating at a temperature of C;
The present invention relates to a resin molding method for semiconductors, which is characterized in that a cut-pending step of cutting out required portions of the lead frame and bending the leads at required angles is automatically and continuously carried out, The purpose of this invention is to shorten the overall resin molding operation time and provide a highly efficient molding method, thereby preventing the above-mentioned conventional disadvantages.
以下、本発明の方法を図に示す実施例に基ついて説明す
る。Hereinafter, the method of the present invention will be explained based on examples shown in the drawings.
第１図（１）及び（２）はボンディング工程を示してお
り、該工程は、まず、半導体リードフレーム１の所定位
置に半導体素子２を取り付ける（ダイポンダーツ作業を
行なった後に、上記素子２とリードフレームｌに所要複
数本設けられるリード３とをワイヤー４にて電気的に接
続する（ワイヤーホンダーツ作業を行なう。FIGS. 1 (1) and (2) show a bonding process, in which the semiconductor element 2 is first attached to a predetermined position of the semiconductor lead frame 1 (after performing the dipon dart work, the element 2 and the leads are attached to each other). A required plurality of leads 3 provided on the frame 1 are electrically connected by wires 4 (wire bolt work is performed).
同図・３）乃至（８）は樹脂モールディング工程を示し
、樹脂モールド加工は、同図１４）に示した樹脂成形金
型装置５にて行なわれる。即ち、同図（３）と、同図（
５）乃至（８）に示すものは樹脂モールド加工［同図（
４）１に附随した前処理及び後処理に相当する作業であ
って、金型装置５ζこ特有の樹脂成形条件若しくは成形
加工状態（こより附随的（こ加えられ或は省略し得るも
のである。然して、同図１３）はボンディング１程を経
たリードフレーム１を、例えば、金型装置５におけるキ
ャビティ部の構成に対応して、三木−組に自動的に並列
させると共に、そのリードフレームト１を金型装置５に
おけるキャビティ部の所定位置へ自動的に供給する作業
を行なう。3) to (8) in the same figure show the resin molding process, and the resin molding process is performed in the resin molding die apparatus 5 shown in FIG. 14). That is, the same figure (3) and the same figure (
The items shown in 5) to (8) are resin molded [see figure (
4) Work corresponding to the pre-processing and post-processing incidental to 1, and the resin molding conditions or molding processing conditions unique to the mold device 5ζ (which may be added or omitted). 13), the lead frame 1 that has undergone bonding 1 is automatically arranged in parallel with the Miki-gumi according to the configuration of the cavity in the mold device 5, and the lead frame 1 is The work of automatically supplying the mold to a predetermined position in the cavity portion of the mold device 5 is performed.
同図（４）はキャビティ部へ供給されたリードフレーム
１上１上の半導体素子２及びワイヤー４の樹脂モールド
加工を行なうもので、通常は、金型装置５における固定
型及び可動型の型閉め後に上記キャビティ部内に溶融樹
脂を加ＬＥ注入して成形する。In the same figure (4), resin mold processing is performed for the semiconductor element 2 and wire 4 on the lead frame 1 that is supplied to the cavity part, and usually the mold is closed for fixed and movable molds in the mold device 5. Afterwards, molten resin is injected into the cavity by LE and molded.
ＩＳお、金型装置５における樹脂モールド加工は、：′
：
樹脂材料の供給ボット内への供給と、その加熱且つ加１
１′：、による溶融樹脂のキャビティ部内への注入、樹
脂モールド成形品の搬出か自動的に且つ連続的に行なわ
れると共に、成形品を搬出して次の型締めが行なわれる
前の間には成形金型面のパリを除去するためのクリーニ
ングが同じく自動的に且つ連続的に行なわれる。同図（
５）乃至（８）での作業は金型装置５から搬出されたリ
ードフレームト１を次工程側へ移送する間に行なうもの
で、同図（５）では金型装置５におけるゲート部分に残
溜硬化して形成されたリードフレーム１上１間の連続樹
脂６の切除（ゲートリムーバル）作業を行ない、同図（
６）では上記連結樹脂６側となるリードフレームトｌの
側面に附着したパリの除去作業を行ない、同図ニア）で
は上記リードフレームト１の上下両面に附着したパリの
除去作業を行ない、゛・同図（８）では上記リードフレ
ーム上ｌを夫々所定の方向へ一列に整列させて次工程側
へ自動的に順次移送する。IS Oh, the resin mold processing in the mold device 5 is:'
: Supplying resin material into the supply bot, heating and adding 1
1': Injection of molten resin into the cavity and removal of the resin molded product are carried out automatically and continuously, and between the time the molded product is removed and the next mold clamping is performed, Cleaning of the mold surface to remove debris is also carried out automatically and continuously. Same figure (
The operations in 5) to (8) are performed while the lead frame 1 taken out from the mold device 5 is transferred to the next process side. The continuous resin 6 between the upper and lower parts of the lead frame 1 formed by pool hardening was removed (gate removal), as shown in the same figure (
In step 6), the work to remove the pars attached to the side surface of the lead frame plate 1, which is the side of the connecting resin 6, is carried out, and in the figure near), the process to remove the pars attached to both the upper and lower surfaces of the lead frame plate 1 is carried out. - In the same figure (8), the lead frames 1 are aligned in a line in a predetermined direction, and are automatically and sequentially transferred to the next process side.
同図（９）はアフターキュアーリング工程を示し、上記
樹脂モールディング工程側から自動的に移送されたリー
ドフレーム１を、アフターキュアーリング装置７内にお
いて１２０℃〜１９０℃の温度、例えば１５０°Ｃの温
度にて約２時間の再加熱を施すことによって、該リード
フレーム上に形成された成形樹脂体８の品質安定化を図
る。なお、このアフター牛ユアーリング工程は上述した
樹脂モールド加工［同図（４）〕における成形条件若し
く成形加工状態によっては省略可能となり得るものであ
り、また、次に述へるカットペンディング工程後に行な
ってもよい。FIG. 9 (9) shows the after-curing process, in which the lead frame 1 automatically transferred from the resin molding process is placed in the after-curing device 7 at a temperature of 120°C to 190°C, for example, 150°C. The quality of the molded resin body 8 formed on the lead frame is stabilized by reheating at a high temperature for about 2 hours. Note that this after-curling process can be omitted depending on the molding conditions or molding conditions in the resin molding process described above [(4) in the same figure], and may be omitted after the cut-pending process described next. You may do so.
同図ｆｌＯ）はカットペンディング工程を示し、リード
フレーム１上に形成された複数個の成形樹脂体８の夫々
を各別に切断分離すると同時的に、その各リード３７ｉ
ｌ−除くタイバー及びステム等の不要部分を切除し、且
つ、上記リード３の夫々を第２図に示すように、所要の
角度に折り曲げる。FIG.
Unnecessary parts such as tie bars and stems are removed, and each of the leads 3 is bent at a required angle as shown in FIG.
同図σＤはマーキング工程若しくはデノピング工程のい
ずれか、又はその両工程を示し、上記マーキング工程に
おいては、成形品の製造番号或は品質及び性能その他の
必要事項を、通常は成形樹脂体８の表面に自動的に標記
する。また、上記デノピング工程においては、各リード
３の腐蝕防止、或は、回路接続の簡易化を目的として、
その表面に例えば半田メッキ等の適当な処理を施す。な
お、上記両工程を夫々連続して行なうことも可能である
。σD in the figure indicates either the marking process or the denoping process, or both processes. In the marking process, the serial number or quality and performance of the molded product and other necessary matters are usually recorded on the surface of the molded resin body 8. automatically marked. In addition, in the denoping process, for the purpose of preventing corrosion of each lead 3 or simplifying circuit connection,
The surface is subjected to appropriate treatment such as solder plating. Note that it is also possible to perform both of the above steps consecutively.
同図１ｚは第２図に示した樹脂成形完成品を専用の収容
ケース９内に自動的に順次収容させる工程を示し、該工
程は上述した成形工程の最終工程（図例においてはマー
キング工程或はデノビング工程）の次に行な′われるも
ので、その目的は、上記完成品の管理を簡易に行なうた
めである。FIG. 1z shows a step in which the finished resin molded products shown in FIG. This process is carried out after the denovating process (denobbing process), and its purpose is to facilitate the management of the finished product.
なお、第１図Ｃと示した成形全工程における樹脂モール
ド［同図（４）］とアフターキュアーリング工程［同図
（９）１との間の適当な個所に、成形樹脂体８の品質検
査工程１０を挿入すれば尚良い。即ち、上記品質検査工
程は、成形樹脂体８の外観検査と、金型装置５における
キャビティ部内に注入される溶融樹脂か所定の＋Ｊ旧Ｉ
：、力にて加圧されて、成形樹脂体８の未充填及び内部
にボイド（空気孔］等か形成されない高品質をイイする
ものであるかどうかの品質検査を主目的とする。この検
査工程においては、例えば、リードフレームｌに形成し
た品質検査用の孔部（図示なし部内に、キャビティ部内
に注入された溶融樹脂が所定の加圧力にて加圧されたと
きにのみ流入して該孔部を密に充填し得るように設定す
ることにより、該孔部内における樹脂の充填状態を適宜
手段によって調べる等の検査方法を採用すればよい。従
って、樹脂モールド加に後のリードフレームｌを上述し
たような品質検査工程を経由させることにより、成形樹
脂体８の１
外観不良或は樹脂の加ＩＥ力不足による品質不良数：。In addition, the quality inspection of the molded resin body 8 was carried out at an appropriate location between the resin mold [FIG. 1 (4)] and the after-curing process [FIG. 1 (9) 1] in the entire molding process shown as C in FIG. It is better if step 10 is inserted. That is, the quality inspection process includes an external appearance inspection of the molded resin body 8 and a predetermined +J former I
: The main purpose of this inspection is to check whether the molded resin body 8 is of high quality without being unfilled or voids (air holes) are formed inside when it is pressurized with force.This inspection In the process, for example, the molten resin injected into the cavity flows into a quality inspection hole (not shown) formed in the lead frame l only when it is pressurized with a predetermined pressure. By setting the hole so that it can be densely filled, an inspection method such as checking the filling state of the resin in the hole by appropriate means can be adopted. By passing through the quality inspection process as described above, the number of quality defects due to appearance defects or insufficient IE force applied to the resin of the molded resin body 8 is determined.
形量の発生を検知し得るから、これらの不良成形品を排
除すること齋こよって、樹脂成形完成品の品質−走化か
図れると共に、不良成形品に対する無用の加圧処理作業
を未然に阻止できる利へかある。Since the occurrence of molding can be detected, these defective molded products can be eliminated, thereby improving the quality of finished resin molded products and preventing unnecessary pressure treatment work on defective molded products. There are benefits that can be gained.
以上のように、本発明方法を使用するときは、半導体の
樹脂モールド成形の全工程を自動的に汀つ連続的に行な
うことによって、前述した従来方法と較べて全体的な成
形作業時間を大幅に短縮化し得ると共に、成形全工程か
高効率化されることによって、前述したような従来方法
における弊害若しくは欠点を解消することかできるとい
った極めて顕著な効果を奏する旭のである。As described above, when using the method of the present invention, the entire process of resin molding of semiconductors is automatically and continuously performed, thereby significantly reducing the overall molding work time compared to the conventional method described above. Asahi's method has the extremely remarkable effect of being able to shorten the process time and making the entire molding process more efficient, thereby eliminating the disadvantages or shortcomings of the conventional method as described above.
図は本発明方法の実施例を示すもので、第１図は半導体
の樹脂モールド成形の全工程説明図、第２図は樹脂成形
完成品の一部切欠斜視図である。
に半導体リードフレーム、２．半導体素子、３°リード
、８．成形＋Ｍ脂体。
□
：１１
□１１１
特許出願人 坂 東 −雄
１）The drawings show an embodiment of the method of the present invention, and FIG. 1 is an explanatory view of the entire process of resin molding of a semiconductor, and FIG. 2 is a partially cutaway perspective view of a completed resin molded product. 2. Semiconductor lead frame. Semiconductor element, 3° lead, 8. Molding + M fat body. □ :11 □111 Patent applicant: Yu Bando 1)
Claims (1)
ディングし程と、上記半導体素子−の樹１指モールディ
ングＬ程と、１−記リードフレームの所要個所を切除す
ると共に、そのリードを所要角度に夫々折り曲げるカッ
トベンディング■稈とを自動的にＩｌ、つ連続的に行Ｉ
Ｓうことを特徴とする半導体の樹脂モールド成形方法。 ＋２］ ′Ｊ￥導体リードフレームに対する半導体素）
のボンディングニー程と、−ノー記半導体素子の樹脂モ
ールディング丁稈と、１−記リードフレームの所要個所
を−Ｊ除するとＪ（に、そのリードを所要角度に夫々折
り曲けるカブトペンディング工程と、成形樹脂体に所要
・ｊ［項を標記するマーキングエ稈とを自動的に１４つ
連続的に行なうことを特徴とする半導体の樹脂モールド
成形方法。 （３）半導体リードフレームに対する半導体素子−のボ
ンディング工程と、上記半導体素子の樹脂モールディン
グ工程と、上記リードフレームの所要個所を切除すると
共に、そのリードを所要角度に夫々折り曲げるカノトペ
ンディング工程と、該リードの夫々に対するデノピング
工程とを自動的に且つ連続的に行なうことを特徴とする
半導体の樹脂モールド成形方法。 （４）半導体リードフレームに対する半導体素子のボン
ディング工程と、上記半導体素子の樹脂モールディング
工程と、成形樹脂体を１２０°Ｃ〜１９０℃の温度にて
再加熱して品質の安定化を図るためのアフターキュアー
リング工程と、上記リードフレームの所要個所を切除す
ると共に、そのリードを所要角度に夫々折り曲げるカッ
トベンディング工程とを自動的に１」一つ連続的に行な
うことを特徴とする半導体の樹脂モールド成）１イヒノ
Ｊ°ンノ、。[Scope of Claims] (1) The bonding of the semiconductor element to the semiconductor lead frame, the length of the tree molding L of the semiconductor element, and the removal of the necessary parts of the lead frame, and the removal of the leads. Cut-bending that bends each to the required angle ■ Automatically and continuously bends the culm
A resin molding method for semiconductors characterized by: +2] 'J\Semiconductor element for conductor lead frame)
- The bonding knee length of the semiconductor element, - The required part of the lead frame (1) divided by -J, and the bending process of bending the leads at the required angle, respectively. A semiconductor resin molding method characterized by automatically and continuously performing 14 markings indicating the required number of items on a molded resin body. (3) Bonding of a semiconductor element to a semiconductor lead frame process, the resin molding process of the semiconductor element, the bending process of cutting out required parts of the lead frame and bending the leads at required angles, and the denoping process of each of the leads automatically and continuously. (4) A process of bonding a semiconductor element to a semiconductor lead frame, a resin molding process of the semiconductor element, and a molded resin body at a temperature of 120°C to 190°C. The after-curing process, in which the lead frame is reheated to stabilize the quality, and the cut-bending process, in which the required parts of the lead frame are cut out and the leads are bent at the required angles, are automatically performed in one step. Semiconductor resin molding is characterized in that it is carried out continuously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8847982A JPS58204543A (en) | 1982-05-24 | 1982-05-24 | Resin molding method for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8847982A JPS58204543A (en) | 1982-05-24 | 1982-05-24 | Resin molding method for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58204543A true JPS58204543A (en) | 1983-11-29 |
Family
ID=13943920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8847982A Pending JPS58204543A (en) | 1982-05-24 | 1982-05-24 | Resin molding method for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58204543A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62269327A (en) * | 1986-05-17 | 1987-11-21 | Michio Osada | Manufacture of semiconductor device fit for multple-product small-quantity production |
| JPS63184344A (en) * | 1987-01-26 | 1988-07-29 | Toshiba Corp | Equipment for manufacturing semiconductor |
| US4913930A (en) * | 1988-06-28 | 1990-04-03 | Wacker Silicones Corporation | Method for coating semiconductor components on a dielectric film |
| EP0844655A3 (en) * | 1996-11-22 | 1999-12-15 | Texas Instruments Incorporated | An integrated circuit chip packaging method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54105479A (en) * | 1978-02-06 | 1979-08-18 | Mitsubishi Electric Corp | Manufacture unit of resin sealed type semiconductor device |
-
1982
- 1982-05-24 JP JP8847982A patent/JPS58204543A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54105479A (en) * | 1978-02-06 | 1979-08-18 | Mitsubishi Electric Corp | Manufacture unit of resin sealed type semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62269327A (en) * | 1986-05-17 | 1987-11-21 | Michio Osada | Manufacture of semiconductor device fit for multple-product small-quantity production |
| JPS63184344A (en) * | 1987-01-26 | 1988-07-29 | Toshiba Corp | Equipment for manufacturing semiconductor |
| US4913930A (en) * | 1988-06-28 | 1990-04-03 | Wacker Silicones Corporation | Method for coating semiconductor components on a dielectric film |
| EP0844655A3 (en) * | 1996-11-22 | 1999-12-15 | Texas Instruments Incorporated | An integrated circuit chip packaging method |
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