JPS5820230A - Apparatus for forming membrane - Google Patents
Apparatus for forming membraneInfo
- Publication number
- JPS5820230A JPS5820230A JP12013581A JP12013581A JPS5820230A JP S5820230 A JPS5820230 A JP S5820230A JP 12013581 A JP12013581 A JP 12013581A JP 12013581 A JP12013581 A JP 12013581A JP S5820230 A JPS5820230 A JP S5820230A
- Authority
- JP
- Japan
- Prior art keywords
- membrane
- membrane support
- discharge
- electrodes
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はガスを原料としグロー放電反応によって有機物
あるいは無機物の膜を形成する膜形成装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a film forming apparatus for forming an organic or inorganic film using a gas as a raw material through a glow discharge reaction.
膜支持体を内装した反応容器内に原料ガスを導入し、こ
の原料ガスをグロー放電の放電エネルイを利用して分解
することにより、上記膜支持体上に膜を形成する膜形成
装置として従来。This is a conventional film forming apparatus that forms a film on the membrane support by introducing a raw material gas into a reaction vessel equipped with a membrane support and decomposing the raw material gas using the discharge energy of glow discharge.
第1図または第3図に示すようなものが用いられている
。第1図に示す装置では1反応容器車内に上下に離間対
向して1対の電極bSeb1が設けられ、これらの一方
は接地され、他方は反応容器aと電気的薯二絶縁され、
かつ高周波電源Cに接続されている。また、上記電極b
1 。The one shown in FIG. 1 or 3 is used. In the apparatus shown in FIG. 1, a pair of electrodes bSeb1 are provided inside one reaction container car, vertically spaced apart from each other, one of which is grounded, and the other is electrically insulated from the reaction container a.
And it is connected to a high frequency power source C. In addition, the above electrode b
1.
b8間にはヒータ等によって温度側−が可能な膜支持体
dが電極bI 、blと平行に設けられている。また、
第2図に示す装置では1円筒状の・反応容器a内の軸心
に円筒状の膜支持体dが回転1在に設けられ、かつ接地
され電極す、を構成している。また1反応容器鳳の周壁
には上記電極b1と対をなす円筒状の電極す、が形成さ
れ、これは反応容器1と電気的に絶縁され。Between b8, a membrane support d, which can be heated on the temperature side by a heater or the like, is provided in parallel with the electrodes bI and bl. Also,
In the apparatus shown in FIG. 2, a cylindrical membrane support d is rotatably provided around the axis of a cylindrical reaction vessel a, and is grounded to form an electrode. Further, a cylindrical electrode paired with the electrode b1 is formed on the peripheral wall of one reaction vessel 1, and is electrically insulated from the reaction vessel 1.
かつ高周波電源Cに接続されている。そして。And it is connected to a high frequency power source C. and.
これらの装置では1反応容器跪中にガス導入口・より原
料ブスを導入し、ガス排出口fより原料ガスを排出しつ
つ電極bst’■間にダ胃−放電を生起させて膜支持体
−上に膜を形成するようになっている。In these devices, a raw material bus is introduced into a reaction vessel through a gas inlet and a gas discharge is caused between electrodes bst' and membrane support while discharging the raw material gas from a gas outlet f. A film is formed on top.
しかしながら、これらの装置では、電極bl eb、
と膜支持体纏とが平行に位置する。すなわち膜支持体−
の表面とダ賀−放電の放電方向とが直交するために高周
波電界が膜支持体−の表面に垂直ζ;印加されることに
なり、グロー放電中におけるプラズマ中のイオンが膜支
持体4に対し垂直方向に振動し、膜形成中に膜表面がイ
オンにより物理的に衝撃を受けるので、形成さdの表面
に平行に振動させることが可能であるが、この方法では
fツズマの均一な制御等に問題が多い。However, in these devices, the electrodes ble eb,
and the membrane support wrap are located in parallel. That is, the membrane support -
Since the surface of the glow discharge is perpendicular to the discharge direction of the discharge, a high frequency electric field is applied perpendicularly to the surface of the membrane support 4, and ions in the plasma during the glow discharge reach the membrane support 4. However, since the film surface is physically bombarded by ions during film formation, it is possible to vibrate parallel to the surface of the formed d, but this method does not allow for uniform control of the f tsuzuma. There are many problems with this.
本発明は上記事情にもとづいてなされたもので、その目
的とするところは1表面性および物理的性質の均一性に
優れた膜を形成することができるよう書ニした膜形成装
置を提供することにある。The present invention has been made based on the above-mentioned circumstances, and the object is to provide a film forming apparatus capable of forming a film having excellent uniformity in surface properties and physical properties. It is in.
以下1本発明の一実施例を第3図および第4φ
図を参照しながら説明する。図番1はたとえばガラス等
の絶縁性材料からなり両端を閉鎖した円筒状の反応容器
で、この反応容器1内の中心部6二はたとえばアルで!
眞つ^等の金属材料からなる円筒状の膜支持体2が上記
反応容器1と同軸に収納され、これは回転軸1を介して
反応容aIJ i:回転自在に軸支されている。また、
膜支持体2は図示しないと一タ等によって表面温度を制
御することができるようになっている。An embodiment of the present invention will be described below with reference to FIG. 3 and FIG. 4φ. Figure 1 is a cylindrical reaction vessel made of an insulating material such as glass and closed at both ends.The center 62 of the reaction vessel 1 is made of, for example, aluminum!
A cylindrical membrane support 2 made of a metal material such as silver is housed coaxially with the reaction vessel 1, and is rotatably supported via a rotating shaft 1. Also,
The surface temperature of the membrane support 2 can be controlled by a single tap or the like (not shown).
また、上記反応容器1の側壁i二は複数個のガス導入口
4−と複数個のガス排出口5・−がそれぞれ2列ずつ設
けられている。これらyx導入口4・−とガス排出口5
−は上記膜支持体1の軸心に対して交差しかつ膜支持体
2の軸方向に互いにずらして、つまりガス導入口4−と
ガス排出口5・・・とが膜支持体1の軸に垂直な同一平
面上に位置しないように配置されている。また。Further, the side wall i2 of the reaction vessel 1 is provided with two rows each of a plurality of gas inlets 4- and a plurality of gas exhaust ports 5. These yx inlet ports 4 and - and gas outlet port 5
- intersects the axis of the membrane support 1 and is shifted from each other in the axial direction of the membrane support 2, that is, the gas inlet 4- and the gas outlet 5... are aligned with the axis of the membrane support 1. are arranged so that they are not located on the same plane perpendicular to . Also.
上記ガス導入口4−は流量制御機能を有するガス導入パ
ルプ6.Cを介して図示しないガス供給系へ、上記ガス
排出口5−・は圧力制御機能を有するfス排出ΔルッF
、Fを介して図示しないガス排出系へそれぞれ接続され
ている。The gas introduction port 4- is a gas introduction pulp 6. having a flow rate control function. The gas discharge port 5 is connected to the gas supply system (not shown) via C through the gas discharge port 5--, which has a pressure control function.
, F to a gas exhaust system (not shown).
さら?=、上記反応容器1の一端部外側g工は整合器1
を介して高周波電源9に電気的に接続された板状の第1
の電極10が、他端部外側には接地された板状の第2の
電極11がそれぞれ設けられ、上記反応容器l内に膜形
成用の原料ガスを収容した状態において高周波電界を印
加することにより第1と第2の電極10.11間にダレ
−放電を生起できるようになっている。すなわち、上記
第1と第2の電極III、11は上記膜支持体2の表面
に対して垂直に位置し、グロー放電の放電方向が膜支持
体20表面に沿うようになっている・
このような構成によれば、ダ胃−放電中におけるプラズ
マ中のイオンは膜支持体20表面と平行に振動するため
、膜形成中に層表間がイオンによる物理的衝撃を受ける
ことが少なくなり。Sara? =, the outer girder at one end of the reaction vessel 1 is the matching vessel 1
A plate-shaped first electrically connected to the high frequency power source 9 via
A grounded plate-like second electrode 11 is provided on the outside of the other end of the electrode 10, and a high-frequency electric field is applied in a state where the raw material gas for film formation is contained in the reaction vessel l. This makes it possible to generate a dale discharge between the first and second electrodes 10.11. That is, the first and second electrodes III and 11 are located perpendicularly to the surface of the membrane support 2, and the discharge direction of the glow discharge is along the surface of the membrane support 20. According to this configuration, the ions in the plasma during gas discharge vibrate parallel to the surface of the membrane support 20, so that the physical impact of the ions between the layer surfaces during membrane formation is reduced.
表面性および物理的性質の均一性に優れた膜を形成する
ことができる。A film with excellent uniformity in surface properties and physical properties can be formed.
次に、実験例を説明する。先ず1表面酸化処理を施した
外径129■のアル電ニウムからなる円筒状の膜支持体
2上に以下のようにして膜を形成した。すなわち%S
l aaおよびBm HsをそれぞれH・によって希釈
するとともにSム4に対するBe H・の比率を120
ppmとした原料ガスを用い、全流量を3 Q Q
txlhk (標準状態)1反応容器1内の圧力を0.
1 T・reとして1!L5@MHg%鵞00Wの電力
を投入しマツチングを調整した。そして、これをほぼ7
時間継続することにより膜支持体2上に非晶質シリコン
膜を形成することができた。ついで、非晶質シリプン膜
が表面に形成された膜支持体2を電子複写機の感光体と
して用い。Next, an experimental example will be explained. First, a membrane was formed in the following manner on a cylindrical membrane support 2 made of aluminum and having an outer diameter of 129 cm and which had been subjected to a surface oxidation treatment. That is, %S
l aa and Bm Hs were each diluted with H and the ratio of Be H to Smu4 was 120.
Using raw material gas with ppm, the total flow rate was 3 Q Q
txlhk (Standard state) 1 The pressure inside reaction vessel 1 is set to 0.
1 1 as T・re! A power of 00 W was applied to adjust the matching. And this is almost 7
By continuing for a long time, an amorphous silicon film could be formed on the membrane support 2. Next, the membrane support 2 on which the amorphous silicone membrane was formed was used as a photoreceptor of an electronic copying machine.
カールソン法により画像形成を行なった。その結果、転
写された画像を、第2図に示す従来装置によって同様の
条件で膜支持体に膜形のであった。Image formation was performed by the Carlson method. As a result, the transferred image was transferred to a membrane support under similar conditions using the conventional apparatus shown in FIG.
なお1本発明は第5図および第6mlに示すように1反
応容器1内に複数個の円筒状膜支持体2・−を並列C−
歌害するようにしてもよく。Note that in the present invention, as shown in FIGS. 5 and 6, a plurality of cylindrical membrane supports 2.
You can also make it hurt the song.
このように構成することにより上記実施例同様の効果が
得られるだけでなく、複数個の膜支持体2・・・に対し
て同時に膜形成を行なえしかも操作が簡単で上方にスペ
ースをとることもない。By configuring it in this way, not only can the same effects as those of the above embodiments be obtained, but also the membrane can be formed on a plurality of membrane supports 2 at the same time, and the operation is simple and space is not taken up above. do not have.
(なお、構成は上記実施例と同様であるので、対応する
部位に同符号を付して説明を省略する。)S l (C
Hs )a C/等のケイ素化合物、ホウ素化合物、リ
ン化合物%に素化合物、窒素、窒素化合物、炭素化合物
、酸素、酸化物等を用いてもよい。(Since the configuration is the same as that of the above embodiment, corresponding parts are given the same reference numerals and explanations are omitted.) S l (C
Silicon compounds, boron compounds, and phosphorus compounds such as Hs ) a C/ may be replaced with elementary compounds, nitrogen, nitrogen compounds, carbon compounds, oxygen, oxides, and the like.
また、上記膜支持体2の材質としては、アルミニウムに
限らず、ステンレス、鉄合金岬の金属、この金属に表面
処理を施したもの、tラス、セラ5ツク、有機高分子岬
の絶縁性物質、あるいはこの絶縁性物質の表面に導電性
の膜を形成したもの等を用いてもよい。ここで、膜支持
体2が導電性の場合は、電気的に絶縁するのが菫り
ましい。In addition, the material of the membrane support 2 is not limited to aluminum, but also stainless steel, iron alloy cape metal, surface-treated material of this metal, T-lass, ceramic cape, and insulating material such as organic polymer cape. Alternatively, a material in which a conductive film is formed on the surface of this insulating material may be used. Here, if the membrane support 2 is conductive, it is preferable to electrically insulate it.
また、膜支持体2は円筒に限らず、たとえば1枚または
複数枚の平板でもよい。Further, the membrane support 2 is not limited to a cylinder, and may be, for example, one or more flat plates.
また、電極10.11は絶縁性の反応容器1の外側に設
けることに限らず1反応容器1の内側でも、あるいは反
応容器1の一部を金属としこれを電極としてもよく1反
応容器1全体が金属の場合はたとえば上面および下面を
絶縁物によって8圃し、ここを電極としてもよい。Further, the electrodes 10 and 11 are not limited to being provided on the outside of the insulating reaction vessel 1, but may also be provided inside the reaction vessel 1, or may be provided on the entire reaction vessel 1 by making a part of the reaction vessel 1 metal. If it is made of metal, for example, the upper and lower surfaces may be covered with an insulating material, and these may be used as electrodes.
以上説明したように本発明によれば、グロー放電の放電
方向な膜支持体の表面に沿わせたから、グロー放電中に
おけるプラズマ中のイオンが膜支持体の表面と平行に振
動するため、膜形成中に膜表面がイオンによる物理的衝
激を受けることが少なくなり、表面性および物理的性質
の均一性に優れた効果を奏する。As explained above, according to the present invention, since the surface of the membrane support is disposed along the discharge direction of the glow discharge, ions in the plasma during the glow discharge vibrate parallel to the surface of the membrane support, thereby forming a film. During this process, the membrane surface receives less physical shock from ions, resulting in excellent uniformity of surface properties and physical properties.
第1図は従来装置を示す縦断側面図、第2図は異なる従
来装置を示す縦断側面図、第3図は本発明装置の一実施
例を示す平面図、第4図は同実施例の縦断側−図、第5
図は本発明の他の実施例を示す平冨図、第6図は同実施
例の縦断側面図である。
1・・・膜支持体
出願人代理人 弁理士 齢 圧式 廖
↓
第 4 図FIG. 1 is a longitudinal side view showing a conventional device, FIG. 2 is a longitudinal side view showing a different conventional device, FIG. 3 is a plan view showing an embodiment of the device of the present invention, and FIG. 4 is a longitudinal section of the same embodiment. Side - Figure, 5th
The figure is a flat view showing another embodiment of the present invention, and FIG. 6 is a longitudinal sectional side view of the same embodiment. 1...Membrane support applicant's agent Patent attorney Age Press Liao↓ Figure 4
Claims (1)
により膜支持体上に膜を形成するようにしたものにおい
て、グー−放電の放電方向を上記膜支持体の表面に沿わ
せたことを特徴とする膜形成装置。In a device in which a film is formed on a membrane support by generating a glow discharge in a raw material gas for film formation, the discharge direction of the goo discharge is aligned along the surface of the membrane support. Characteristic film forming equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12013581A JPS5820230A (en) | 1981-07-31 | 1981-07-31 | Apparatus for forming membrane |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12013581A JPS5820230A (en) | 1981-07-31 | 1981-07-31 | Apparatus for forming membrane |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5820230A true JPS5820230A (en) | 1983-02-05 |
Family
ID=14778827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12013581A Pending JPS5820230A (en) | 1981-07-31 | 1981-07-31 | Apparatus for forming membrane |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5820230A (en) |
-
1981
- 1981-07-31 JP JP12013581A patent/JPS5820230A/en active Pending
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